/**********
Copyright 1991 Regents of the University of California.  All rights reserved.
Author:	1991 David A. Gates, U. C. Berkeley CAD Group
**********/

/*
 *   Translated FORTRAN subroutine to read the SUPREM-3 binary file
 *   the data is read and stored in two arrays x and conc
 */


#include "ngspice.h"

#define MAXMAT 10
#define MAXIMP 4
#define MAXLAYER 10
#define MAXGRID 500

#define GFREAD( fp, ptr, type, num ) if (num && (fread( ptr,\
		sizeof(type), (unsigned)num, fp ) != (unsigned)num)) {\
		return;\
		}

#define DEBUG	if (0)

void
SUPbinRead(char *inFile, float *x, float *conc, int *impId, int *numNod)
{
  int idata, recordMark;
  int ldata;
  int i, j;
  float rdata;
  char cdata[21];
  int numLay, numImp, numGrid;
  int impTyp[4], matTyp[10], topNod[10], siIndex, offset;
  float xStart;
  float layerTh[10];
  float con[500];
  FILE *fpSuprem;

  /* Clear Concentration Array */
  for ( i=0; i < MAXGRID; i++ ) {
    conc[i] = 0.0;
  }

  /* Open Input File */
  if (!(fpSuprem = fopen( inFile, "r" ))) {
    perror(inFile);
    return;
  }

/*
 * The first record contains the number of layers (I4), the number of 
 * impurities (I4), and the number of nodes (I4) present in the structure.
 */
  GFREAD( fpSuprem, &recordMark, int, 1 );
  GFREAD( fpSuprem, &numLay, int, 1 );
  GFREAD( fpSuprem, &numImp, int, 1 );
  GFREAD( fpSuprem, &numGrid, int, 1 );
  DEBUG fprintf(stderr,"rec 1: %d %d %d\n", numLay, numImp, numGrid);
  GFREAD( fpSuprem, &recordMark, int, 1 );

/*
 * The second record contains, for each layer, the material type (I4), the
 * layer thickness (R4), and the pointer to the top node of the layer (I4).
 */
  GFREAD( fpSuprem, &recordMark, int, 1 );
  for ( i=0; i < numLay; i++ ) {
    GFREAD( fpSuprem, &matTyp[i], int, 1 );
    GFREAD( fpSuprem, &layerTh[i], float, 1 );
    GFREAD( fpSuprem, &topNod[i], int, 1 );
    DEBUG fprintf(stderr,"rec 2: %d %f %d\n", matTyp[i], layerTh[i], topNod[i] );
  }
  GFREAD( fpSuprem, &recordMark, int, 1 );

/*
 * The third record contains, for each layer, the material name (A20).
 */
  /* Put a null at the end */
  cdata[20] = '\0';
  GFREAD( fpSuprem, &recordMark, int, 1 );
  for ( i=0; i < numLay; i++ ) {
    GFREAD( fpSuprem, cdata, char, 20 );
    DEBUG fprintf(stderr,"rec 3: %s\n", cdata );
  }
  GFREAD( fpSuprem, &recordMark, int, 1 );

/*
 * The fourth record contains, for each layer, the crystalline orientation
 * (I4), and the poly-crystalline grain size in microns (R4).
 */
  GFREAD( fpSuprem, &recordMark, int, 1 );
  for ( i=0; i < numLay; i++ ) {
    GFREAD( fpSuprem, &idata, int, 1 );
    GFREAD( fpSuprem, &rdata, float, 1 );
    DEBUG fprintf(stderr,"rec 4: %d %f\n", idata, rdata );
  }
  GFREAD( fpSuprem, &recordMark, int, 1 );
     
/*
 * The fifth record contains, for each impurity, the type of impurity (I4).
 */
  GFREAD( fpSuprem, &recordMark, int, 1 );
  for ( i=0; i < numImp; i++ ) {
    GFREAD( fpSuprem, &impTyp[i], int, 1 );
    DEBUG fprintf(stderr,"rec 5: %d\n", impTyp[i] );
  }
  GFREAD( fpSuprem, &recordMark, int, 1 );

/*
 * The sixth record contains, for each impurity, the impurity name (A20).
 */
  GFREAD( fpSuprem, &recordMark, int, 1 );
  for ( i=0; i < numImp; i++ ) {
    GFREAD( fpSuprem, cdata, char, 20 );
    DEBUG fprintf(stderr,"rec 6: %s\n", cdata );
  }
  GFREAD( fpSuprem, &recordMark, int, 1 );

/*
 * The seventh record contains, for each layer by each impurity, the
 * integrated dopant (R4), and the interior concentration of the
 * polysilicon grains (R4).
 */
  GFREAD( fpSuprem, &recordMark, int, 1 );
  for ( j=0; j < numLay; j++ ) {
    for ( i=0; i < numImp; i++ ) {
      GFREAD( fpSuprem, &rdata, float, 1 );
      DEBUG fprintf(stderr,"rec 7: %e", rdata );
      GFREAD( fpSuprem, &rdata, float, 1 );
      DEBUG fprintf(stderr," %e\n", rdata );
    }
  }
  GFREAD( fpSuprem, &recordMark, int, 1 );

/*
 * The eighth record contains, for each node in the structure, the distance
 * to the next deepest node (R4).
 */
  GFREAD( fpSuprem, &recordMark, int, 1 );
  for ( i=0; i < numGrid; i++ ) {
    GFREAD( fpSuprem, &rdata, float, 1 );
  }
  DEBUG fprintf(stderr,"rec 8: %f\n", rdata );
  GFREAD( fpSuprem, &recordMark, int, 1 );

/*
 * The ninth record contains, for each node in the structure, the distance
 * from the surface (R4).
 */
  GFREAD( fpSuprem, &recordMark, int, 1 );
  GFREAD( fpSuprem, &x[1], float, numGrid );
  DEBUG fprintf(stderr,"rec 9: %f\n", x[1] );
  GFREAD( fpSuprem, &recordMark, int, 1 );

/*
 * Next, for each impurity there is a record containing the impurity's
 * chemical concentration at each node (R4) and a record containing the
 * impurity's active concentration at each node (R4).
 */

  for ( j=0; j < numImp; j++ ) {
/* chemical concentration - not required */
    GFREAD( fpSuprem, &recordMark, int, 1 );
    GFREAD( fpSuprem, &con[1], float, numGrid );
    DEBUG fprintf(stderr,"rec 10: %e\n", con[1] );
    GFREAD( fpSuprem, &recordMark, int, 1 );
        
/* store active concentration */
    GFREAD( fpSuprem, &recordMark, int, 1 );
    GFREAD( fpSuprem, &con[1], float, numGrid );
    DEBUG fprintf(stderr,"rec 11: %e\n", con[1] );
    GFREAD( fpSuprem, &recordMark, int, 1 );

    if (impTyp[j] == *impId) {
/*...Boron...*/
      if (impTyp[j] == 1) {
	for ( i=1; i <= numGrid; i++ ) conc[i] = - con[i];
      } else {
/*...All Other Impurities: P, As, Sb ...*/
	for ( i=1; i <= numGrid; i++ ) conc[i] = con[i];
      }
    }
  }

/*
 * The last record in the file contains some random stuff that might be
 * useful to some people, the temperature in degrees Kelvin of the last
 * diffusion step (R4), the phosphorus implant dose (R4), the arsenic
 * implant flag (L4).
 */
  GFREAD( fpSuprem, &recordMark, int, 1 );
  GFREAD( fpSuprem, &rdata, float, 1 );
  DEBUG fprintf(stderr,"rec 12: %f", rdata );
  GFREAD( fpSuprem, &rdata, float, 1 );
  DEBUG fprintf(stderr," %e", rdata );
  GFREAD( fpSuprem, &ldata, int, 1 );
  DEBUG fprintf(stderr," %d\n", ldata );
  GFREAD( fpSuprem, &recordMark, int, 1 );

  fclose( fpSuprem );

/* shift silicon layer to beginning of array */
  for ( j=0; j < numLay; j++ ) {
    if (matTyp[ j ] == 1) {
      siIndex = j;
    }
  }
  offset = topNod[ siIndex ] - 1;
  numGrid -= offset;
  xStart = x[1 + offset];
  for ( i=1; i <= numGrid; i++ ) {
    x[i] = x[i + offset] - xStart;
    conc[i] = conc[i + offset];
  }

/* Store number of valid nodes using pointer */
  *numNod = numGrid;
  return;
}

void
SUPascRead(char *inFile, float *x, float *conc, int *impId, int *numNod)
{
  int idata;
  int i, j;
  float rdata;
  char cdata[21];
  int numLay, numImp, numGrid;
  int impTyp[4], matTyp[10], topNod[10], siIndex, offset;
  float xStart;
  float layerTh[10];
  float con[500];
  FILE *fpSuprem;

  /* Clear Concentration Array */
  for ( i=0; i < MAXGRID; i++ ) {
    conc[i] = 0.0;
  }

  /* Open Input File */
  if (!(fpSuprem = fopen( inFile, "r" ))) {
    perror(inFile);
    return;
  }

/*
 * The first line contains the number of layers (I4), the number of 
 * impurities (I4), and the number of nodes (I4) present in the structure.
 */
  fscanf( fpSuprem, "%d %d %d\n", &numLay, &numImp, &numGrid );
  DEBUG fprintf( stderr, "set 1: %d %d %d\n", numLay, numImp, numGrid);

/*
 * The second set of lines contains, for each layer, the material name (A20),
 * the material type (I4), the layer thickness (R4), and the pointer to
 * the top node of the layer (I4), and an unknown int and unknown float.
 * The material type code:
 *   1 - Si
 *   2 - SiO2
 *   3 - Poly
 *   4 - Si3N4
 *   5 - Alum
 */
  for ( i=0; i < numLay; i++ ) {
    fscanf( fpSuprem, "%s\n %d %e %d %d %e\n",
	cdata, &matTyp[i], &layerTh[i], &topNod[i], &idata, &rdata );
    DEBUG fprintf(stderr,"set 2: %s: %d %f %d\n",
	cdata, matTyp[i], layerTh[i], topNod[i] );
  }

/*
 * The third set of lines contains, for each impurity, the name of the
 * impurity (A20) and the type of impurity (I4).
 */
  for ( i=0; i < numImp; i++ ) {
    fscanf( fpSuprem, "%s\n %d\n", cdata, &impTyp[i] );
    DEBUG fprintf(stderr,"set 3: %s: %d\n", cdata, impTyp[i] );
  }

/*
 * The fourth set of lines contains, for each layer by each impurity, the
 * integrated dopant (R4), and the interior concentration of the
 * polysilicon grains (R4).
 */
  for ( j=0; j < numLay; j++ ) {
    for ( i=0; i < numImp; i++ ) {
      fscanf( fpSuprem, "%e", &rdata );
      fscanf( fpSuprem, "%e", &rdata );
    }
  }
  DEBUG fprintf(stderr,"set 4:\n" );

/*
 * The fifth set of lines contains, for each node in the structure,
 * the distance to the next deepest node (R4), the distance from the
 * surface (R4), and, for each impurity type, the impurity's
 * chemical concentration (R4) and the impurity's active concentration (R4).
 */
  for ( i=1; i <= numGrid; i++ ) {
    fscanf( fpSuprem, "%e %e", &rdata, &x[i] );

    for ( j=0; j < numImp; j++ ) {
/* chemical concentration - not required */
      fscanf( fpSuprem, "%e", &con[i] );
        
/* store active concentration */
      fscanf( fpSuprem, "%e", &con[i] );

/* orient sign properly */
      if (impTyp[j] == *impId) {
/*...Boron...*/
	if (impTyp[j] == 1) {
	  conc[i] = - con[i];
	} else {
/*...All Other Impurities: P, As, Sb ...*/
	  conc[i] = con[i];
	}
      }
    }
  }
  DEBUG fprintf( stderr, "set 5: %e %e\n", x[1], conc[1] );

/*
 * The last line in the file contains some random stuff that might be
 * useful to some people, the temperature in degrees Kelvin of the last
 * diffusion step (R4), the phosphorus implant dose (R4), the arsenic
 * implant flag (L4).  However, we can just ignore that stuff.
 */
  fclose( fpSuprem );


/* shift silicon layer to beginning of array */
  for ( j=0; j < numLay; j++ ) {
    if (matTyp[ j ] == 1) {
      siIndex = j;
    }
  }
  offset = topNod[ siIndex ] - 1;
  numGrid -= offset;
  xStart = x[1 + offset];
  for ( i=1; i <= numGrid; i++ ) {
    x[i] = x[i + offset] - xStart;
    conc[i] = conc[i + offset];
  }

/* Store number of valid nodes using pointer */
  *numNod = numGrid;
  return;
}
