\input texinfo   @c -*-texinfo-*-
@c $Id: ngspice.texi,v 1.35 2008/11/25 09:22:55 pnenzi Exp $
@c %**start of header
@setfilename ngspice.info
@include version.texi
@format
INFO-DIR-SECTION Simulation
START-INFO-DIR-ENTRY
* Ngspice: (ngspice).            General-purpose circuit simulation program for
                                 nonlinear dc, nonlinear transient, and linear
                                 ac analyses
END-INFO-DIR-ENTRY
@end format

@settitle NGSPICE User Manual
@setchapternewpage odd
@c %**end of header

@c Summary Description and Copyright
@copying
Copyright 1996 The Regents of the University of California.

@quotation
Permission to use, copy, modify, and distribute this software and its
documentation for educational, research and non-profit purposes,
without fee, and without a written agreement is hereby granted,
provided that the above copyright notice, this paragraph and the
following three paragraphs appear in all copies.

This software program and documentation are copyrighted by The Regents
of the University of California. The software program and
documentation are supplied "as is", without any accompanying services
from The Regents. The Regents does not warrant that the operation of
the program will be uninterrupted or error-free. The end-user
understands that the program was developed for research purposes and
is advised not to rely exclusively on the program for any reason.

IN NO EVENT SHALL THE UNIVERSITY OF CALIFORNIA BE LIABLE TO ANY PARTY
FOR DIRECT, INDIRECT, SPECIAL, INCIDENTAL, OR CONSEQUENTIAL DAMAGES,
INCLUDING LOST PROFITS, ARISING OUT OF THE USE OF THIS SOFTWARE AND
ITS DOCUMENTATION, EVEN IF THE UNIVERSITY OF CALIFORNIA HAS BEEN
ADVISED OF THE POSSIBILITY OF SUCH DAMAGE. THE UNIVERSITY OF
CALIFORNIA SPECIFICALLY DISCLAIMS ANY WARRANTIES, INCLUDING, BUT NOT
LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR
A PARTICULAR PURPOSE. THE SOFTWARE PROVIDED HEREUNDER IS ON AN "AS IS"
BASIS, AND THE UNIVERSITY OF CALIFORNIA HAS NO OBLIGATIONS TO PROVIDE
MAINTENANCE, SUPPORT, UPDATES, ENHANCEMENTS, OR MODIFICATIONS.
@end quotation
@end copying

@c Titlepage, Contents, Copyright and Contents

@titlepage
@title NGSPICE User Manual
@subtitle Describes ngspice-rework-@value{VERSION}
@subtitle Draft Version 0.2
@author Many Authors

@c The following two commands start the copyright page.
@page
@vskip 0pt plus 1filll
@insertcopying
@end titlepage

@c Output the table of contents at the begining
@contents

@c 'Top' Node and master menu

@ifnottex
@node Top, Preface, (dir), (dir)
@top NGSpice User Manual
This manual describes the mixed level simulator NGspice
and applies to the version called Rework @value{VERSION}.

@insertcopying
@end ifnottex

@menu
* Preface::                     Some words about this manual.
* Acknowledgements::            Almost all the people who contributed 
                                  to NGSPICE development.
* Release Notes::               Release notes for the NGSPICE simulator
* Introduction::                Description of NGSPICE. Try to answer
                                  the question: What NGSPICE is ?
* NGSPICE Compilation::         How to compile NGSPICE.
* Supported Analyses::          Describes supported analyses and introduces
                                  some convergence issues.
* Circuit Description::         How to input a circuit to the simulator.      
* Circuit Elements and Models:: Description and use of the devices models 
                                  built into NGSPICE.
* Analyses and Output Control:: How to run analyses and check the results.  
* Interactive Interpreter::     The commands recognized by the NGSPICE 
                                  interactive frontend.
* Bibliography::                A small bibliography.  
* Example Circuits::            Some examples.
* Model and Device Parameters:: Equations that makes the models and parameters.
@end menu

@c Body of the Document

@node    Preface, Acknowledgements, Top, Top
@comment node-name, next,           previous, up
@chapter Preface

The NGSPICE user's manual is based on the text file included in the Spice3f 
source package. The original text has been converted to @TeX{}Info format by 
Emmanuel Rouat and Arno W. Peters.

The original text has been modified and extended to reflect the changes 
between plain Spice3f5 and NGSPICE. Some of the "changes" comes from the 
HTML documentation Charles D.H. Williams has written and published on his web
site.

This manual covers the double role of being an introductory text for the 
novice user who wants to learn how to use spice (and thus NGSPICE), and a 
reference text for the expert who wants to identify the differences between 
the original spice3f code (sometimes referred as the Berkeley's Spice) and 
the NGSPICE code.

Since NGSPICE is an Open Source software, one chapter describing program 
compilation and compilation options have been added to the original 
text. Since its birth, spice3f had many compilation switches that 
enabled/disabled some features considered experimental or troublesome. In a 
"perfect world", most of these switches would be implemented as runtime 
options, thus allowing users to activate/deactivate the features they want 
without recompiling the source. Anyway time is never sufficient to implement 
all the features and, in the end, this is not a "perfect world". 

Trying to keep a record of the "long" history of this piece of software, 
an entire chapter has been dedicated to the description of the patches 
publicly made available in the past years through USENET newsgroups. 


As always, errors, omissions and unreadable phrases are only my fault.
@flushright
@email{p.nenzi@@ieee.org, Paolo Nenzi}
Roma, March 24th 2001
@end flushright

@flushright
@quotation
Indeed. At the end of the day, this is engineering, and one learns to live
within the limitations of the tools.

@email{kevin@@anasoft.co.uk, Kevin Aylward} , Warden of the Kings Ale
@end quotation
@end flushright

@node    Acknowledgements, Release Notes, Preface, Top
@comment node-name,     next,           previous, up
@chapter Acknowledgements

@c Include the AUTHORS file from the top directory
@c include @value{top_srcdir}/AUTHORS
@include AUTHORS

@node    Release Notes, Introduction, Acknowledgements, Top
@comment node-name,     next,           previous, up
@chapter Release Notes
 
@noindent
@sc{NGSPICE rework-14 release} (released on December 10th, 2001):

@example
This release fixes most of the bugs that appeared in rework-13. 

Some leaks in the frontend have been closed. 

GNU Autoconf interface cleaned (better support for getopt). 

Better error reporting (thanks to Charles Williams "CDHW"). 

Added mesa tests (macspice3f4).
 
Added support for ekv model (not source code).  

The Rawfile format changed again removing "Probe" compatibility code.
@end example

@noindent
@sc{NGSPICE rework-13 release} (released on November 5th, 2000):

@example
This is a major release in terms of fixes and enhancements. 

A garbage collector support has been added. If the configuration 
script detects that you have installed GC (Bohem-Weiser conservative 
garbage collector), it will use it. 

Some memory leaks have been fixed too.

Enhancements to the code comes from Alan's (Gillespie) contribute 
code, a description of improvements follows (extracted form 
Alan's mail):

* Output File Format Changes -

Rawfile format changed to PSPICE Probe format (Usable with Demo 
version of Microsim's Probe). (NOTE: Do not rely on this, we may 
revert to the old format in the next release).

Text mode .OP results even though "rawfile" written.

Internal device nodes are not saved to "rawfile" (reduces file 
size). Optionally, these internal nodes can be replaced by device 
currents and saved.

* DC Convergence Enhancements -

"Source-Stepping" algorithm modified with a "Dynamic" step size. 
After each successful step, the node voltages are saved, the 
source-factor is increased by the step-factor, and the step-factor 
is increased (for the next step). If the step fails, i.e. the 
circuit does not converge, the source-factor is set to the value 
from the previous successful step, the previously stored node 
voltages are restored, the step-factor is reduced, the source factor 
is increased by this smaller step-factor, and convergence is 
attempted again.

Same thing done for "Gmin-stepping" algorithm.

"Gshunt" option added. This sets the "diagGmin" variable used
in the gmin-stepping algorithm to a non-zero value for the final 
solution. (Normally this is set to zero for the final solution). 
This helps for circuits with floating nodes (and for some others too).

The Gmin implementation across the substrate diodes of MOS1, MOS2, 
MOS3, MOS6 and BSIM3 devices, and across BJT base-emitter and 
base-collector diodes, was incorrect. Correcting this dramatically 
improved DC convergence. (I think this also effects BSIM1 and 2 but 
I haven't fixed them yet! ).

The gm, gmb and gds calculations in the MOS3 model were all wrong. 
The device equations were fixed, leading to much improved convergence.

The Vcrit value used for diode voltage limiting was calculated without 
taking into account the device area (and in some cases without using 
the temperature corrected saturation current). This could cause floating 
point overflows, especially in device models designed to be scaled by a 
small area, e.g. 2u by 2u diodes (area=4e-12). This is now fixed for 
Diode, BJT, MOS1, MOS2, and MOS3 models.

The diode voltage limiting was modified to add negative voltage 
limiting. Negative diode voltages are now limited to 3*Vdp-10, where 
Vdp is the voltage from the previous iteration. If Vdp is positive, 
then the voltage is limited to -10V. This prevents some more floating 
point overflows. (Actually, I'm still playing with the best values for 
this).

The Spice3 "fix" for the MOS3 gds discontinuity between the linear and 
saturated regions only works if the VMAX parameter is non-zero. A 
"tweak" has been added for the VMAX=0 case.

* Transient Convergence Enhancements -

Temperature correction of various diode capacitances was implemented 
slightly incorrectly, leading to capacitance discontinuities in 
simulations at temperatures other than nominal. This affected the 
Diode and MOS3 models.

A mistake in the implementation of the MOS3 source-bulk capacitance 
model resulted in a charge storage discontinuity. This has been fixed.

The level 2 MOSFET model seems to calculate Von and Vth values for the
threshold and subthreshold values respectively, but then uses Vbin to 
calculate the Vdsat voltage used to find the drain current. However, a 
jump statement uses Von to decide that the device is in the "cutoff" 
region, which means that when this jump allows the drain current to be 
calculated, Vdsat can already be well above zero. This leads to a 
discontinuity of drain current with respect to gate voltage. The code 
is now modified to use Vbin for the jump decision. It looks like the 
code should actually use Vth as the threshold voltage, but since 
PSPICE and HSPICE both follow the original Berkeley code, this was 
left alone.

* New Model Parameters -

A PSPICE/HSPICE-like "M" device parameter (i.e. M devices in parallel) 
was added to the MOS1,2,3 and BSIM3 mosfet models.

* Input Read-in and Checking -

Numbers beginning with a "+" sign got the input routine confused. 
Fixed now.

Attempts to nodeset (or .IC) non-existent nodes are flagged with 
a warning.

PWL statements on Voltage or Current sources are now checked for 
"non-increasing" time-points at the start of the simulation. 
Previously each time-point was checked as it was reached during 
the simulation, which could be very annoying if you made a mistake 
which caused the simulation to fail after hours of run-time.

A check which was performed at the end of each sub-circuit 
expansion was moved to the top level. This check makes sure that 
all sub-circuits have been defined, but in its original position, 
it meant that if a sub-circuit included ANY .MODEL statements at all, 
then ALL the models called in that sub-circuit must also be defined 
within that sub-circuit. Now SPICE behaves as expected, i.e. a 
subcircuit may define its own models, but may also use models defined 
at any level above.

* Miscellaneous Fixes/Enhancements -

MOS devices reported only half of the Meyer capacitances, and did 
not include overlap capacitances, when reporting to the .OP printout, 
or when storing device capacitances to the "rawfile".

The ideal switch devices had no time-step control to stop their 
controlling voltages/currents overshooting the switching thresholds. 
The time-step control has been modified to use the last two time 
points to estimate if the next one will move the controlling 
voltage/current past a switching threshold. If this looks likely, 
then the time-step is reduced.

The "rawfile" writing routines have been modified to print the 
"reference value" to the console during the simulation. This lets 
the user see exactly how far and how fast the simulation is proceeding.

.OP printout tidied up a lot to make the printout clearer.

Analysis order changed to fix a "feature" where, if you ask for a 
.OP and a .TRAN in the same simulation, the node voltages printed out 
correspond to the .OP, but the device data was from the last timepoint 
of the .TRAN.
@end example

@noindent
@sc{NGSPICE rework-12 release} (released on August 26th, 2000):

@example
Arno did a great work this summer! 
This release consists of his work. The pole-zero analysis has been
corrected. The error was introduced in an attempt to eliminate compiler
warnings. 

The source has been reworked and info file have been updated. 
As you may see, a new dir called "spicelib" has been created, another 
step toward the separation of the simulator from the frontend. 
@end example

@noindent
@sc{NGSPICE rework-11 release} (released on May 28th, 2000):

@example
The code has been cleaned, the resistance code for ac parameter 
has been modified to conform to Spice3 parameter parsing. 

A new step function has been introduced (u2). 

Updated documentation to reflect changes. 
@end example

@noindent
@sc{NGSPICE rework-10 release} (released on April 5th, 2000):

@example
All devices are compiled as shared libraries (ld.so). 

There is an initial support for the BSIM4 model. This release 
is to be considered as baseline for the project. 

There are still some harmless bugs in the resistor code.
@end example

Release notes for older NGSPICE release are not available. For historical 
purpose only the following release notes, pertaining to the original Spice3
code have been included into this manual. They have been copied from 
"SPICE 3 Version 3f5 User's Manual":

 
Spice3f is the six major release of Spice3. This release incorporates 
new features not available in Spice 3c or 3d, as well as several 
performance improvements. All of the feature described here are believed
to be fully functional. The development of SPICE is ongoing at Berkeley,
and therefore not all of the intended capabilities have been implemented
in full yet.


@noindent
@sc{Bugs in 3f2 fixed in 3f3:}

@example
Ascii (printer) plots in spice3f2 did not print bode plots vs log of the
frequency by default, as in spice2.

You had to explicitly request the x-axis to be log; either "@command{plot 
vdb(2) xlog}" (best) or "@command{plot vdb(2) vs log10(frequency)}" will 
do. Now, simply "@command{plot vdb(2)}" will work.

The on-line documentation has been brought up to date by converting this
manual into a format readable on-line.

Significant problems with AC sensitivities in 3f2 only have been fixed.

Multiple analyses and plots in spice2 emulation mode under 3f2 and
earlier generated misleading error messages. This no longer happens
in 3f3.
@end example

@noindent
@sc{New features and bug fixes incorporated in spice3f}
(the current release of Spice3):

@example
Sensitivity analysis
Added a parameter for fitting JFET models (parameter "@code{B}").
 
Fixed a discontinuity problem in MOS level 3 (related to the 
"@code{kappa}" parameter). Working "@command{alter}" command.

Improved "@command{show}" and "@command{showmod}" commands for operating points 
summary tables (like Spice2). 

Working "@command{trace}" command.

Interactive "@command{set}" variable values now the same as
"@code{.options}" settings.

Improved plotting, including implicitly transforming data for smith
plots.

Added function "@code{deriv()}" (derivative) to the front-end.

Corrected an error affecting the specified initial conditions for
some circuits.

Miscellaneous bug fixes in the front-end.
@end example

@noindent
@sc{New feature and bugs fixes incorporated in Spice3e}
(the @emph{previous} release of Spice3):

@example
Lossy Transmission lines.

Proper calculation of sheet resistance in the MOS models.

A new command ("@command{where}") to aid in debugging troublesome
circuits.

Smith-chart plots working (see the "@command{plot}" command).

Arbitrary sources in subcircuits handled correctly.

Arbitrary source reciprocal calculations and DC biasing fixed.

Minor bug-fixes to the Pole-Zero analysis.

Miscellaneous bug fixes in the front end.
@end example

@noindent
@sc{Some common problems remaining in Spice3f}
(note that this list is not complete):

@example
Models defined within subcircuits are not always handled correctly.
If you have trouble, move the model definition outside of "@code{.subckt}"
and "@code{.ends}" lines.

Batch run data is not compacted if a "rawspice" data file is generated,
resulting in excessively large output files for some difficult inputs.

Sufficient detail is sometimes not preserved in transient analysis.
Providing a small value for the "@code{TMAX}" parameter (the fourth 
argument) in the transient run command will solve this problem.

Convergence problems can sometimes be worked around by relaxing the
transient "@code{TMAX}" parameter.

The substrate node of the bipolar transistor (BJT) is modelled 
incorrectly (this may actually be due to inherent numerical problems
with the model). Do not use substrate node; use a semiconductor
capacitor to model substrate effects.

Charge is not conserved in MOS devices based on the Meyer model.

Transient simulation of strictly resistive circuits (typical for
first runs or tests) allow a time step the is too large (e.g. a
sinusoidal source driving a resistor). There is no integration
error to restrict the time step. Use the "@code{TMAX}" parameter or
include reactive elements.

Deep nesting of subcircuits may exceed internal static buffers.

The PZ analysis can not be interrupted; the sensitivity analysis
can not be continued (the interactive "@command{resume}" command) once 
interrupted.

There are many other small bugs, particularly in the front end.
@end example
 
@section Reporting a bug

Berkeley does not provide support anymore for Spice3, if you need
some kind of help you can 



@node    Introduction, NGSPICE Compilation, Release Notes, Top
@comment node-name,    next,                previous,         up
@chapter Introduction

NGSPICE is a general-purpose circuit simulation program for nonlinear
dc, nonlinear transient, and linear ac analyses.  Circuits may contain
resistors, capacitors, inductors, mutual inductors, independent
voltage and current sources, four types of dependent sources, lossless
and lossy transmission lines (two separate implementations), switches,
uniform distributed RC lines, and the five most common semiconductor
devices: diodes, BJTs, JFETs, MESFETs, and MOSFETs.

NGSPICE is a continuation of Spice3f5, the last Berkeley's release of
Spice3 simulator family.  NGSPICE is being developed to include new 
features to existing Spice3f5 and to fix its bugs. Improving a circuit
simulator is a very hard task and, while some improvements have been
ported, most of the job has been done on bug fixing and code refactoring. 

NGSPICE has built-in models for the semiconductor devices, and the user
need specify only the pertinent model parameter values.  

There are two models for BJT both based on the integral-charge model of Gummel 
and Poon; however, if the Gummel-Poon parameters are not specified, the 
model reduces to the simpler Ebers-Moll model. In either case and in either 
models, charge storage effects, ohmic resistances, and a current-dependent
output conductance may be included. The second BJT model BJT2 adds dc current
computation in the substrate diode @emph{but is not fully implemented as of 
ngspice-rework-15}. The semiconductor diode model can be used for either 
junction diodes or Schottky barrier diodes.  There are two models for JFET: 
the first (JFET) is based on the model of Shichman and Hodges, the second 
(JFET2) is based on the Parker-Skellern model.  
All the original six MOSFET models are implemented: MOS1 is described by a 
square-law I-V characteristic, MOS2 [1] is an analytical model, while MOS3 
[1] is a semi-empirical model; MOS6 [2] is a simple analytic model accurate 
in the shortchannel region; MOS4 [3, 4] and MOS5 [5] are the BSIM (Berkeley
Short-channel IGFET Model) and BSIM2.  MOS2, MOS3, and MOS4 include 
second-order effects such as channel-length modulation, subthreshold 
conduction, scattering-limited velocity saturation, small-size effects, and 
charge controlled capacitances. Other MOS model have been implemented, like
the new BSIM3 and BSIM4 models, the SOI models from the BSIMSOI family and 
the STAG one. There is partial support for a couple of HFET models and one 
model for MESA devices.

Since the rework-15 release, NGSPICE includes CIDER, a mixed-level 
circuit and device simulator that provides a direct link between 
technology parameters and circuit performance.  

A mixed-level circuit and device simulator can provide greater 
simulation accuracy than a stand-alone circuit or device  simulator
by  numerically modelling  the critical devices in a circuit.  Compact 
models can be used for noncritical devices.

CIDER couples Spice (version3) to an internal C-based device simulator, 
DSIM. Spice3 provides circuit analyses, compact models for semiconductor 
devices, and an interactive user interface. DSIM provides accurate, one- 
and two-dimensional numerical device models based on the solution of 
Poisson's equation, and the electron and hole current-continuity equations. 
DSIM incorporates many of the same basic physical models found in the 
Stanford two-dimensional device simulator PISCES. Input to CIDER consists 
of a SPICE-like description of the circuit and its compact models, and 
PISCES-like descriptions of the structures of numerically modeled devices. 
As a result, CIDER should seem familiar to designers already accustomed to 
these two tools.

CIDER is based on the mixed-level circuit and device simulator CODECS,  
and is a replacement for this program. The basic algorithms of the two 
programs are the same.  Some of the differences between CIDER and 
CODECS are described below. The CIDER input format has greater flexibility  
and allows increased access to physical model parameters.  
New physical models have been added to allow simulation of state-of-the-art 
devices. These include transverse field mobility degradation important 
in scaled-down MOSFETs and a polysilicon model for poly-emitter 
bipolar  transistors. Temperature dependence has been included over 
the range from -50C to 150C.  The numerical models can be used to 
simulate all the basic types of semiconductor devices: resistors, MOS 
capacitors, diodes, BJTs, JFETs and MOSFETs. BJTs and JFETs can be 
modelled with or without a substrate contact.  Support has been added 
for the management of device internal states. Post-processing of 
device states can be performed using  the NUTMEG user interface of Spice3.  
Previously computed states can be loaded into the program to provide  
accurate initial guesses for subsequent analyses. Finally, numerous small
bugs have been discovered and fixed, and the program has been ported to a 
wider variety of computing platforms.

@node    NGSPICE Compilation, Supported Analyses, Introduction, Top
@comment node-name,     next,           previous, up
@chapter NGSPICE Compilation

@menu
* Extracting the archive::           
* Configuring NGSPICE::
* Compiling NGSPICE::  
* Supported systems::
* Platform specific issues::                 
@end menu


NGSPICE is an Open Source project (and software), this means that its source 
code is available to the end user. Well, to be honest, the source code is the 
only thing available to the user. This chapter briefly describes how to
deal with this rather complex package. 


@node Extracting the archive, Configuring NGSPICE, NGSPICE Compilation, NGSPICE Compilation
@section Extracting the archive


NGSPICE is released as "gzipped tarball". The source tree is archived with the
@command{tar} command and the result compressed with @command{gzip}. Since
the development of the NGSPICE is carried on UNIX (mainly), all the files
have the "line feed" character as newline character and this may cause 
problems when working in non UNIX environments (like DOS). If you are going
to extract NGSPICE on system that use different newline character, you
will have to convert the files with some utility. 

To extract the NGSPICE archive you need the @command{tar} archiver and 
@command{gzip} compression utility:

@example
pnenzi@@janus:~$ gzip -d ngspice-rework-15.tar.gz
pnenzi@@janus:~$ tar -xvf ngspice-rework-15.tar           
@end example  

Once extracted, you  have to enter the source tree (just @command{cd} into the
top level directory).

@node Configuring NGSPICE, Compiling NGSPICE, Extracting the archive, NGSPICE Compilation
@section Configuring NGSPICE

Now that you have extracted all the files, you need to give values to compile
time variables and set the correct paths for libraries and include file. If 
you have compiled other programs released in source form, you have probably 
already faced the @emph{GNU Autoconf} system. If you already know what 
Autoconf is and how it works, you can safely skip the next paragraph.  

GNU Autoconf is a package that automates the task of configuring source 
code packages. Configuring a source code package means assigning desired 
values to compile-time variables, something known as "customization", and
look at functions, libraries available on the host system to produce the 
makefiles needed for compilation. As said, this is a very brief introduction 
to the Autoconf package, if you want to know more, look at its documentation.
         
NGSPICE uses @emph{GNU Autoconf} configuration tool. To configure the 
package type: @command{./configure --help} on the command prompt. The
list of available options will be shown. The list comprises "standard" options
(the one every Autoconf package has) and options specific to the NGSPICE 
package. This chapter deals with the latter only, sending back the reader to 
the GNU Autoconf documentation for the former.

The options specific to NGSPICE are:

@itemize @bullet
@item  @command{--enable-numaparam}: Preliminary support for parameters expansion
       in netlists. Numparam is a library that attach itself to a single point
       in NGSPICE code and comes with its own documentation. Before using this 
       library you should look at library's documentation in @file{src/frontend/numaparam}
       directory.
@item  @command{--enable-ftedebug}: This switch enables the code for debugging
       the NGSPICE frontend. Developers who wish to mess with the frontend 
       should enable it (and set to @code{TRUE} the "debug" option). The 
       casual user has no gain in enabling this option.
@item  @command{--enable-ansi}: This switch forces @code{-ansi} option of the
       for compilation. This is interesting only to developers cleaning the
       NGSPICE code. Nore real use for the user.
@item  @command{--enable-debug}: Add @code{-g} option for compilation. This 
       options is enabled by default and should not be disabled since 
       debugging tools relies on it.
@item  @command{--enable-checkergcc}: When enabled, NGSPICE will use the 
       @emph{Checker} package. Checker tracks down memory errors at runtime. 
       Again, this is useless for users.   
@item  @command{--enable-gc}: When enabled, NGSPICE will use the Boehm-Weiser 
       Conservative Garbage Collector. The garbage collector library is not 
       provided with NGSPICE, you must download and install it separately. Most
       distributions provide a binary package of this library.         
@item  @command{--enable-nosqrt}: When enabled, the faster code using SQRT in
       charge/capacitance calculations of bulk diodes, when the grading 
       coefficients have a vaule of .5, is switched off. I think there is 
       no need to enable it.        
@item  @command{--enable-nobypass}: When enabled the bypass code is not 
       compiled in. Once enabled NGSPICE does not contain the code to bypass
       recalculations of slowly changing variables. It is advisable to leave 
       this disabled since the bypass code does is used only if the "bypass" 
       option is set to @code{TRUE} at runtime.
@item  @command{--enable-capbypass}: When enabled the calculation of cbd/cbs 
       in the mosfets is bypassed ifvbs/vbd voltages were unchanged. Better 
       do not enable it if you are not sure of its implications.
@item  @command{--enable-capzerobypass}: When enabled all the calculations
       cbd/cbs calculations if Czero is zero. It is safe to enable this 
       feature.
@item  @command{--enable-nodelimiting}: Enable some experimental code that
       was intended to do Newton damping by nodes, rather than by branches 
       as is currently done. The flag just turns off the branch limiting code 
       in a couple of mosfets. Obviously, do not enable this if you are not
       working with the limiting code.              
@item  @command{--enable-predictor}: When this feature is enabled, NGSPICE 
       (like the orignal Spice3f) uses a predictor-corrector method for 
       the numerical integration package. This feature has never been tested 
       too much, so enabling it is NOT considered safe.
@item  @command{--enable-newtrunc}: When enabled, some unfinished (?) code to
        do truncation error timestep control on node voltages (rather than on 
        charge in the devices) is activated. Casual users should not enable it.
@item  @command{--enable-sense2}: Use spice2 sensitivity analysis.
@item  @command{--enable-sensdebug}: Enables debug switch for sensitivity code. 
@item  @command{--enable-intnoise}: If enabed, noise analysis produces an 
       additional plot: the integrated noise. Users should always enable this.
@item  @command{--enable-smoketest}: Enables some very restrictive compilation
       flags. Useful only in development phase and, if enabled, probably 
       NGSPICE does not compile. 
@item  @command{--enable-experimental}: It is possible that some untested code
       is included in stable releases. If you want to experiment with new 
       untested features, enable this option.         
@item  @command{--enable-ekv}: EKV is a device model not released in source 
       code form. If you have obtained the source code, you have to enable 
       this to have it compiled into NGSPICE.
@item  @command{--with-readline}: This option enables GNU Readline on NGSPICE.
       Since NGSPICE license is incompatible with GPL (which covers Readline 
       library), the code is not included compiled into NGSPICE by default.
@end itemize

@sc{Caveat Emptor}:
NGSPICE, like its father Spice3f5 cannot be considered a "black box", it is a 
complex numerical software whose stability and correctness depends on many 
parameters. Be sure to understand well what you enable/disable otherwise your 
simulations may converge to a wrong value or do not converge at all. 

Once chosen the options to enable/disable, you will have to issue the 
@command{configure} command followed by the options you choose, like:

@command{configure --enable-intnoise --enable-nobypass --enable-capzerobypass}

If all goes well, all makefiles will be generated and the package is ready 
to be compiled.

@node Compiling NGSPICE, Supported systems, Configuring NGSPICE, NGSPICE Compilation
@section Compiling NGSPICE

The reference platform for NGSPICE is a Linux system with glibc2 ang gcc 
(2.95 o newer) running on the i386 architecture. If you have such a system 
you can pretty sure that NGSPICE will compile correctly.

Once configured, to compile NGSPICE @command{cd} into the top level directory
(if you moved from it after configuration) and issue the @command{make}. If 
you have a multi-processor machine, you can add @option{-j3} to speed up
compilation. 

NGSPICE compilation takes several minutes on an average machine, enough to
let you have a lunch. Once NGSPICE has been compiled, you have to install it
issuing the command @command{make install}. NGSPICE will be installed under
@file{/usr/local/}.
  
@node Supported systems, Platform specific issues, Compiling NGSPICE, NGSPICE Compilation
@section Supported systems
  
NGSPICE development is carried on Linux on the i386 processor architecture.
Compiling it under different UNIX systems should require only trivial
changes, since most of the issues will be resolved by Autoconf. Compiling
under non UNIX OSes may require major changes, since Autoconf and other
UNIX tools may not be available on those environments. 

In the past, NGSPICE have been ported to some OSes, the table below shows
the port I am aware of:

@sc{NetBSD}

@email{mcmahill@@mtl.mit.edu, Dan McMahill} has ported NGSPICE 
(starting from rework-13) on NetBSD systems. Dan maintains a NetBSD package 
for NGSPICE available at 
@url{ftp://ftp.netbsd.org/pub/NetBSD/packages/pkgsrc/cad/ng-spice/README.html} .

@sc{Solaris 7}

@email{skod@@ises-llc.com, Scott Griffith} has compiled ngspice rework-12 on 
Solaris 7 with gcc (verion 2.95.1). Some changes to the source code were 
needed:

@quotation
Notes on compilation on SUN Solaris (extracted from Scott's email):
Solaris lacks some of the functions needed by ngspice. You have to 
copy them from other GNU tools. 
(Scott defines the following changes "some of the usual workarounds")

@itemize @bullet

@item Copy @file{getopt.c}, @file{getopt1.c} and @file{asprintf.c} from 
      other GNU tools into the misc directory of the ngspice tree and 
      modify the Makefiles accordingly.
@item Change @file{src/maths/cmaths/test_cx_ph.c} to 
      @code{#include <defines.h>}, because that gave me a compiler 
      error on @code{DBL_EPSILON}.
@end itemize
@end quotation

@sc{Windows}

@email{holger.vogt@@uni-duisburg.de, Holger Vogt} has ported NGSPICE
(from rework-14 release) to the Windows Operating System. His port relies 
only on DLLs coming with Windows.

As of Rework-16 the Windows port is integrated as part of ngspice. It can be
build under @url{http://www.cygwin.com/,,Cygwin} or @url{http://www.mingw.org/,,MinGW}.


The situation of NGSPICE ports is evolving continually, the one above are the
only I (Paolo Nenzi) am aware of. I know that there is a intent to port 
NGSPICE to FreeBSD but do not know its status. 

This section will be updated in the future.


@node Platform specific issues, , Supported systems, NGSPICE Compilation
@section Platform specific issues

NGSPICE heavily relies on the floating point representation. On the i386
architecture, the floating point implementation can cause problems to
numerical software like NGSPICE. Intel i386 and later processors have
80-bit wide floating point registers in their FPU. This width is referred
ad @emph{extended double} precision and all the calculation are done,
internally, at that precision. Externally, the result can be used as is or
rounded to @emph{double} precision as defined in the IEEE754 standard for
floating point, so there are two modes of operation and the choice is left
to the operating system. FreeBSD developers decided that the FPU had to 
provide results conforming to IEEE745, while Linux ones decided to take 
advantage of the extended precision. 

This different choice lead to slightly different results when running the 
same simulation on different operating systems. Catastrophic discrepancies
arise on badly written software. 

  

@node Supported Analyses, Circuit Description, NGSPICE Compilation, Top
@chapter Supported Analyses

This chapter introduces the analyses available in NGSPICE.

@menu
* Types of Analysis::           
* Analysis at Different Temperatures::  
* Convergence::                 
@end menu



@node Types of Analysis, Analysis at Different Temperatures, Supported Analyses, Supported Analyses
@section Types of Analysis

@menu
* DC Analysis::                 
* AC Small-Signal Analysis::    
* Transient Analysis::          
* Pole-Zero Analysis::          
* Small-Signal Distortion Analysis::  
* Sensitivity Analysis::        
* Noise Analysis::              
@end menu


@node DC Analysis, AC Small-Signal Analysis, Types of Analysis, Types of Analysis
@subsection DC Analysis


The dc analysis portion of NGSPICE determines the dc operating point of
the circuit with inductors shorted and capacitors opened.  The dc
analysis options are specified on the @code{.DC}, @code{.TF}, and @code{.OP}
control lines.A dc analysis is automatically performed prior to a transient 
analysis to determine the transient initial conditions, and prior to an ac
small-signal analysis to determine the linearized, small-signal models
for nonlinear devices.  If requested, the dc small-signal value of a
transfer function (ratio of output variable to input source), input
resistance, and output resistance is also computed as a part of the dc
solution.  The dc analysis can also be used to generate dc transfer
curves: a specified independent voltage, current source, resistor or 
temperature is stepped over a user-specified range and the dc output 
variables are stored for each sequential source value.

Temperature (@code{TEMP}) and resistance sweeps have been introduced 
in NGSPICE, they were not available in the original code of Spice3f5.

@node AC Small-Signal Analysis, Transient Analysis, DC Analysis, Types of Analysis
@subsection AC Small-Signal Analysis


The ac small-signal portion of NGSPICE computes the ac output variables
as a function of frequency.  The program first computes the dc
operating point of the circuit and determines linearized, small-signal
models for all of the nonlinear devices in the circuit.  The resultant
linear circuit is then analyzed over a user-specified range of
frequencies.  The desired output of an ac small-signal analysis is
usually a transfer function (voltage gain, transimpedance, etc).  If
the circuit has only one ac input, it is convenient to set that input
to unity and zero phase, so that output variables have the same value
as the transfer function of the output variable with respect to the
input.


@node Transient Analysis, Pole-Zero Analysis, AC Small-Signal Analysis, Types of Analysis
@subsection Transient Analysis

The transient analysis portion of NGSPICE computes the transient output
variables as a function of time over a user-specified time interval.
The initial conditions are automatically determined by a dc analysis.
All sources which are not time dependent (for example, power supplies)
are set to their dc value.  The transient time interval is specified
on a @code{.TRAN} control line.


@node Pole-Zero Analysis, Small-Signal Distortion Analysis, Transient Analysis, Types of Analysis
@subsection Pole-Zero Analysis


The pole-zero analysis portion of NGSPICE computes the poles and/or
zeros in the small-signal ac transfer function.  The program first
computes the dc operating point and then determines the linearized,
small-signal models for all the nonlinear devices in the circuit.
This circuit is then used to find the poles and zeros of the transfer
function.

Two types of transfer functions are allowed: one of the form (output
voltage)/(input voltage) and the other of the form (output
voltage)/(input current).  These two types of transfer functions cover
all the cases and one can find the poles/zeros of functions like
input/output impedance and voltage gain.  The input and output ports
are specified as two pairs of nodes.

The pole-zero analysis works with resistors, capacitors, inductors,
linear-controlled sources, independent sources, BJTs, MOSFETs, JFETs
and diodes.  Transmission lines are not supported.

The method used in the analysis is a sub-optimal numerical search.
For large circuits it may take a considerable time or fail to find all
poles and zeros.  For some circuits, the method becomes "lost" and
finds an excessive number of poles or zeros.


@node Small-Signal Distortion Analysis, Sensitivity Analysis, Pole-Zero Analysis, Types of Analysis
@subsection Small-Signal Distortion Analysis


The distortion analysis portion of NGSPICE computes steady-state
harmonic and intermodulation products for small input signal
magnitudes.  If signals of a single frequency are specified as the
input to the circuit, the complex values of the second and third
harmonics are determined at every point in the circuit.  If there are
signals of two frequencies input to the circuit, the analysis finds
out the complex values of the circuit variables at the sum and
difference of the input frequencies, and at the difference of the
smaller frequency from the second harmonic of the larger frequency.

Distortion analysis is supported for the following nonlinear devices:
diodes (DIO), BJT, JFET, MOSFETs (levels 1, 2, 3, 4/BSIM1, 5/BSIM2,
and 6) and MESFETS.  All linear devices are automatically supported by
distortion analysis.  If there are switches present in the circuit,
the analysis continues to be accurate provided the switches do not
change state under the small excitations used for distortion
calculations.


@node Sensitivity Analysis, Noise Analysis, Small-Signal Distortion Analysis, Types of Analysis
@subsection Sensitivity Analysis


NGSPICE will calculate either the DC operating-point sensitivity or the
AC small-signal sensitivity of an output variable with respect to all
circuit variables, including model parameters. NGSPICE calculates the
difference in an output variable (either a node voltage or a branch
current) by perturbing each parameter of each device independently.
Since the method is a numerical approximation, the results may
demonstrate second order affects in highly sensitive parameters, or
may fail to show very low but non-zero sensitivity.  Further, since
each variable is perturb by a small fraction of its value, zero-valued
parameters are not analyized (this has the benefit of reducing what is
usually a very large amount of data).


@node Noise Analysis,  , Sensitivity Analysis, Types of Analysis
@subsection Noise Analysis


The noise analysis portion of NGSPICE does analysis device-generated
noise for the given circuit.  When provided with an input source and
an output port, the analysis calculates the noise contributions of
each device (and each noise generator within the device) to the output
port voltage.  It also calculates the input noise to the circuit,
equivalent to the output noise referred to the specified input source.
This is done for every frequency point in a specified range - the
calculated value of the noise corresponds to the spectral density of
the circuit variable viewed as a stationary gaussian stochastic
process.

After calculating the spectral densities, noise analysis integrates
these values over the specified frequency range to arrive at the total
noise voltage/current (over this frequency range).  This calculated
value corresponds to the variance of the circuit variable viewed as a
stationary gaussian process.

@node Analysis at Different Temperatures, Convergence, Types of Analysis, Supported Analyses
@section Analysis at Different Temperatures


Temperature, in NGSPICE, is a property associated to the entire circuit, 
rather an analysis option. Circuit temperature has a default (nominal)
value of 27@math{^o}C (300.15 K) that can be changed using the @option{TNOM} 
option in an @code{.OPTION} control line. All analyses are, thus,  
performed at circuit temperature, and if you want to simulate circuit
behaviour at different temperatures you should prepare a netlist
for each temperature.

All input data for NGSPICE is assumed to have been measured at the 
circuit nominal temperature. This value can further be overridden for 
any device which models temperature effects by specifying the @option{TNOM} 
parameter on the @code{.model} itself.  

Individual instances may further override the circuit temperature
through the specification of @option{TEMP} and @option{DTEMP} parameters
on the instance. The two options are not independent even if you can
specify both on the instance line, the @option{TEMP} option overrides
@option{DTEMP}. The algorithm to compute instance temperature is described 
below:

@example

IF TEMP is specified THEN 
        instance_temperature = TEMP
ELSE IF
        instance_temperature = circuit_temperature + DTEMP
END IF

@end example

Temperature dependent support is provided for all devices except voltage 
and current sources (either independent and controlled) and BSIM models.
BSIM MOSFETs have an alternate temperature dependency scheme which adjusts
all of the model parameters before input to NGSPICE.  For details of the
BSIM temperature adjustment, see [6] and [7].


Temperature appears explicitly in the exponential terms of the BJT and
diode model equations.  In addition, saturation currents have a
built-in temperature dependence.  The temperature dependence of the
saturation current in the BJT models is determined by:

@tex
$$
    I_S(T_1) = I_S(T_0) \left|T_1 \over T_0\right|^{XTI}
               \exp \left| E_g q(T_1 T_0) \over k (T_1 - T_0) \right|
$$
@end tex
@ifnottex
@example
                        XTI
                    |T |        | E q(T  T )|
                      1            g   1  0
    I (T ) = I (T ) |--|     exp|-----------|
     S  1     S  0
                    |T |        |k (T  - T )|
                      0              1    0
@end example
@end ifnottex

where `@math{k}' is Boltzmann's constant, `@math{q}' is the electronic 
charge, `@math{E}' is the energy gap which is a model parameter, `@math{G}' 
and `@math{XTI}' is the saturation current temperature exponent (also a 
model parameter, and usually equal to 3).



The temperature dependence of forward and reverse beta is according to
the formula:

@tex
$$
    B(T_1) = B(T_0) \left| T_1 \over T_0 \right|^{XTB}
$$
@end tex
@ifnottex
@example
                                XTB
                            |T |
                              1
              B(T ) = B(T ) |--|
                 1       0
                            |T |
                              0
@end example
@end ifnottex


where `@math{T_0}' and `@math{T_1}' are in degrees Kelvin, and `@math{XTB}' 
is a user-supplied model parameter.  Temperature effects on beta are carried 
out by appropriate adjustment to the values of `@math{B_F}', `@math{I_SE}', 
`@math{B_R}', and `@math{I_SC}' (spice model parameters @option{BF}, 
@option{ISE}, @option{BR}, and @option{ISC}, respectively).



Temperature dependence of the saturation current in the junction diode
model is determined by:


@tex
$$
    I_S(T_1) = I_S(T_0) \left| T_1 \over T_0 \right|^{XTI \over N}
               \exp \left| E_g q(T_1 T_0) \over N k (T_1 - T_0) \right|
$$
@end tex
@ifnottex
@example
                       XTI
                       ---
                        N
                   |T |        |  E q(T  T ) |
                     1             g   1  0
   I (T ) = I (T ) |--|     exp|-------------|
    S  1     S  0
                   |T |        |N k (T  - T )|
                     0                1    0
@end example
@end ifnottex


where `@math{N}' is the emission coefficient, which is a model parameter, and the
other symbols have the same meaning as above.  Note that for Schottky
barrier diodes, the value of the saturation current temperature
exponent, `@math{XTI}', is usually 2.



Temperature appears explicitly in the value of junction potential, 
`@option{U}' (in NGSPICE @option{PHI}), for all the device models.
The temperature dependence is determined by:

@tex
$$
     U(T) = {k T \over q} \log_e \left| N_a N_d \over N_i T^2 \right|
$$
@end tex
@ifnottex
@example
                             | N N   |
                                a d
                    kT       |------ |
             U(T) = --  log        2
                     q     e |N (T)  |
                               i
@end example
@end ifnottex

where `@math{k}' is Boltzmann's constant, `@math{q}' is the electronic 
charge, `@math{N_a}' is the acceptor impurity density, `@math{N_d}' is 
the donor impurity density, `@math{N_i}' is the intrinsic carrier 
concentration, and `@math{E_g}' is the energy gap.



Temperature appears explicitly in the value of surface mobility, 
`@math{M_0}' (or @math{U_0}), for the MOSFET model.  The temperature 
dependence is determined by:

@tex
$$
    M_0(T) = {M_0(T_0) \over \left| T \over T_0 \right|^{1.5}}
$$
@end tex
@ifnottex
@example
                          M (T )
                           0  0
                 M (T) = -------
                  0          1.5
                         | T|
                         |--|
                         |T |
                           0
@end example
@end ifnottex

The effects of temperature on resistors, capacitor and inductors is modeled 
by the formula:

@tex
$$
    R(T) = R(T_0) \bigl( 1 + TC_1 (T - T_0) + TC_2 (T - T_0)^2 \bigr)
$$
@end tex
@ifnottex
@example
                                              2
 R(T) = R(T ) [1 + TC  (T - T ) + TC  (T - T ) ]
           0         1       0      2       0
@end example
@end ifnottex

where `@math{T}' is the circuit temperature, `@math{T_0}' is the nominal temperature,
and `@math{TC_1}' and `@math{TC_2}' are the first and second order temperature
coefficients.



@node Convergence,  , Analysis at Different Temperatures, Supported Analyses
@section Convergence


Both dc and transient solutions are obtained by an iterative process
which is terminated when both of the following conditions hold:

@enumerate

@item

The nonlinear branch currents converge to within a tolerance of 0.1% or
1 picoamp (1.0e-12 Amp), whichever is larger.

@item

The node voltages converge to within a tolerance of 0.1% or 1 microvolt
(1.0e-6 Volt), whichever is larger.

@end enumerate

Although the algorithm used in NGSPICE has been found to be very
reliable, in some cases it fails to converge to a solution.  When this
failure occurs, the program terminates the job.

Failure to converge in dc analysis is usually due to an error in
specifying circuit connections, element values, or model parameter
values.  Regenerative switching circuits or circuits with positive
feedback probably will not converge in the dc analysis unless the 
@code{OFF} option is used for some of the devices in the feedback path, 
or the @code{.NODESET} control line is used to force the circuit to 
converge to the desired state.


@node Circuit Description, Circuit Elements and Models, Supported Analyses, Top
@chapter Circuit Description

@menu
* General Structure and Conventions::  
* Basics::                      
* Device Models::               
* Subcircuits::                 
* INCLUDE::                     
@end menu


@node General Structure and Conventions, Basics, Circuit Description, Circuit Description
@section General Structure and Conventions

The circuit to be analyzed is described to ngspice by a set of element
lines, which define the circuit topology and element values, and a set
of control lines, which define the model parameters and the run
controls.  The first line in the input file must be the title, and the
last line must be "@code{.END}".  The order of the remaining lines is
arbitrary (except, of course, that continuation lines must immediately
follow the line being continued).

Each element in the circuit is specified by an element line that
contains the element name, the circuit nodes to which the element is
connected, and the values of the parameters that determine the
electrical characteristics of the element.  The first letter of the
element name specifies the element type.  The format for the NGSPICE
element types is given in what follows.  The strings @code{XXXXXXX}, 
@code{YYYYYYY}, and @code{ZZZZZZZ} denote arbitrary alphanumeric strings.
For example, a resistor name must begin with the letter @code{R} and can 
contain one or more characters.  Hence, @code{R}, @code{R1}, @code{RSE}, 
@code{ROUT}, and @code{R3AC2ZY} are valid resistor names.  Details of each 
type of device are supplied in a following section.

Fields on a line are separated by one or more blanks, a comma, an
equal (`@code{=}') sign, or a left or right parenthesis; extra spaces are
ignored.  A line may be continued by entering a `@code{+}' (plus) in 
column 1 of the following line; NGSPICE continues reading beginning with 
column 2.

A name field must begin with a letter (A through Z) and cannot contain
any delimiters.


A number field may be an integer field (12, -44), a floating point
field (3.14159), either an integer or floating point number followed
by an integer exponent (1e-14, 2.65e3), or either an integer or a
floating point number followed by one of the following scale factors:

@c TODO: put this in multiple columns.
@ifnottex
 @math{@code{T} = 10^12}
 @math{@code{G} = 10^9}
 @math{@code{Meg} = 10^6}
 @math{@code{K} = 10^3}
 @math{@code{mil} = 25.4^-6}
 @math{@code{m} = 10^-3}
 @math{@code{u} = 10^-6}
 @math{@code{n} = 10^-9}
 @math{@code{p} = 10^-12}
 @math{@code{f} = 10^-15}
@end ifnottex
@tex
$$
\eqalign{\code{T} &= 10^{12} \cr
 \code{G} &= 10^9 \cr
 \code{Meg} &= 10^6 \cr
 \code{K} &= 10^3 \cr
 \code{mil} &= 25.4^{-6} \cr
 \code{m} &= 10^{-3} \cr
 \code{u} &= 10^{-6} \cr
 \code{n} &= 10^{-9} \cr
 \code{p} &= 10^{-12} \cr
 \code{f} &= 10^{-15} \cr}
$$
@end tex

Letters immediately following a number that are not scale factors are
ignored, and letters immediately following a scale factor are ignored.
Hence, 10, 10V, 10Volts, and 10Hz all represent the same number, and
M, MA, MSec, and MMhos all represent the same scale factor.  Note that
1000, 1000.0, 1000Hz, 1e3, 1.0e3, 1kHz, and 1k all represent the same
number.

Nodes names may be arbitrary character strings.  The datum (ground)
node must be named `0' (zero).  Note the difference in NGSPICE where 
the nodes are treated as character strings and not evaluated as numbers, 
thus `0' and `00' are distinct nodes in NGSPICE but not in SPICE2.  

NGSPICE needs that the following topological constraints are satisfied:

@itemize @bullet
@item The circuit cannot contain a loop of voltage sources and/or 
      inductors and cannot contain a cut-set of current sources 
      and/or capacitors.  
@item Each node in the circuit must have a dc path to ground.  
@item Every node must have at least two connections except for transmission 
      line nodes (to permit unterminated transmission lines) and MOSFET 
      substrate nodes (which have two internal connections anyway).
@end itemize



@node Basics, Device Models, General Structure and Conventions, Circuit Description
@section Basics: Title Line, Comment Lines and .END Line


@menu
* Title Line::                  
* END::                         
* Comments::                    
@end menu

@node Title Line, END, Basics, Basics
@subsection Title Line


 Examples:

@example
     POWER AMPLIFIER CIRCUIT
     TEST OF CAM CELL
@end example


The title line must be the first in the input file.  Its contents are
printed verbatim as the heading for each section of output.




@node END, Comments, Title Line, Basics
@subsection .END Line


 Examples:

@example
     .END
@end example


The "End" line must always be the last in the input
 file.   Note  that the period is an integral part of the
 name.





@node Comments,  , END, Basics
@subsection Comments

 General Form:

@example
     * <any comment>
@end example


 Examples:

@example
     * RF=1K      Gain should be 100
     * Check open-loop gain and phase margin
@end example


The asterisk in the  first  column  indicates  that
 this  line  is  a  comment  line.   Comment lines may be
 placed anywhere in the circuit description.   Note  that
 NGSPICE  also considers any line with leading white space
 to be a comment.




@node Device Models, Subcircuits, Basics, Circuit Description
@section Device Models

 General form:

@example
     .MODEL MNAME TYPE(PNAME1=PVAL1 PNAME2=PVAL2 ... )
@end example


 Examples:

@example
     .MODEL MOD1 NPN (BF=50 IS=1E-13 VBF=50)
@end example



Most simple circuit elements typically require only a few parameter
values.  However, some devices (semiconductor devices in particular)
that are included in NGSPICE require many parameter values.  Often, many
devices in a circuit are defined by the same set of device model
parameters.  For these reasons, a set of device model parameters is
defined on a separate .MODEL line and assigned a unique model name.  The
device element lines in NGSPICE then refer to the model name.

For these more complex device types, each device element line contains
the device name, the nodes to which the device is connected, and the
device model name.  In addition, other optional parameters may be
specified for some devices: geometric factors and an initial condition
(see the following section on Transistors and Diodes for more details).

MNAME in the above is the model name, and type is one of the following
fifteen types:

@vtable @code

@item R

Semiconductor resistor model

@item C

Semiconductor capacitor model

@item L

Inductor model

@item SW

Voltage controlled switch

@item CSW

Current controlled switch

@item URC

Uniform distributed RC model

@item LTRA

Lossy transmission line model

@item D

Diode model

@item NPN

NPN BJT model

@item PNP

PNP BJT model

@item NJF

N-channel JFET model

@item PJF

P-channel JFET model

@item NMOS

N-channel MOSFET model

@item PMOS

P-channel MOSFET model

@item NMF

N-channel MESFET model

@item PMF

P-channel MESFET model
@end vtable



Parameter values are defined by appending the parameter name followed by
an equal sign and the parameter value.  Model parameters that are not
given a value are assigned the default values given below for each model
type.  Models, model parameters, and default values are listed in the
next section along with the description of device element lines.


@node  Subcircuits, INCLUDE, Device Models, Circuit Description
@section Subcircuits


A subcircuit that consists of NGSPICE elements can be defined and
referenced in a fashion similar to device models.  The subcircuit is
defined in the input file by a grouping of element lines; the program
then automatically inserts the group of elements wherever the subcircuit
is referenced.  There is no limit on the size or complexity of
subcircuits, and subcircuits may contain other subcircuits.  An example
of subcircuit usage is given in Appendix A.



@menu
* SUBCKT::                      
* ENDS::                        
* Subcircuit Calls::            
@end menu

@node SUBCKT, ENDS, Subcircuits, Subcircuits
@subsection .SUBCKT Line

 General form:

@example
     .SUBCKT subnam N1 <N2 N3 ...>
@end example


 Examples:

@example
     .SUBCKT OPAMP 1 2 3 4
@end example



A circuit definition is begun with a .SUBCKT line.  SUBNAM is the
subcircuit name, and N1, N2, ... are the external nodes, which cannot
be zero.  The group of element lines which immediately follow the
.SUBCKT line define the subcircuit.  The last line in a subcircuit
definition is the .ENDS line (see below).  Control lines may not
appear within a subcircuit definition; however, subcircuit definitions
may contain anything else, including other subcircuit definitions,
device models, and subcircuit calls (see below).  Note that any device
models or subcircuit definitions included as part of a subcircuit
definition are strictly local (i.e., such models and definitions are
not known outside the subcircuit definition).  Also, any element nodes
not included on the .SUBCKT line are strictly local, with the
exception of 0 (ground) which is always global.




@node ENDS, Subcircuit Calls, SUBCKT, Subcircuits
@subsection ENDS Line

 General form:

@example
     .ENDS <SUBNAM>
@end example


 Examples:

@example
     .ENDS OPAMP
@end example


The "Ends" line must be the last one for any subcircuit definition.  The
subcircuit name, if included, indicates which subcircuit definition is
being terminated; if omitted, all subcircuits being defined are
terminated.  The name is needed only when nested subcircuit definitions
are being made.



@node  Subcircuit Calls,  , ENDS, Subcircuits
@subsection  Subcircuit Calls

 General form:

@example
     XYYYYYYY N1 <N2 N3 ...> SUBNAM
@end example


 Examples:

@example
     X1 2 4 17 3 1 MULTI
@end example


Subcircuits are used in NGSPICE by specifying pseudo-elements beginning
with the letter X, followed by the circuit nodes to be used in expanding
the subcircuit.




@node INCLUDE,  , Subcircuits, Circuit Description
@section INCLUDE

 General form:

@example
  .INCLUDE filename
@end example


 Examples:

@example
  .INCLUDE /users/spice/common/wattmeter.cir
@end example


Frequently, portions of circuit descriptions will be reused in several
input files, particularly with common models and subcircuits.  In any
ngspice input file, the ".include" line may be used to copy some other
file as if that second file appeared in place of the ".include" line
in the original file.  There is no restriction on the file name
imposed by ngspice beyond those imposed by the local operating system.


@node Circuit Elements and Models, Analyses and Output Control, Circuit Description, Top
@chapter Circuit Elements and Models


Data fields that are enclosed in less-than and greater-than signs ('<
>') are optional.  All indicated punctuation (parentheses, equal signs,
etc.) is optional but indicate the presence of any delimiter.  Further,
future implementations may require the punctuation as stated.  A
consistent style adhering to the punctuation shown here makes the input
easier to understand.  With respect to branch voltages and currents,
NGSPICE uniformly uses the associated reference convention (current flows
in the direction of voltage drop).


@menu
* General options and information::
* Elementary Devices::          
* Voltage and Current Sources::  
* Transmission Lines::          
* Transistors and Diodes::      
@end menu

@node  General options and information, Simulating more devices in parallel, Circuit Elements and Models, Circuit Elements and Models
@section  General options and information

@menu
* Simulating more devices in parallel::
* Technology scaling::
* Model binning::
@end menu

@node Simulating more devices in parallel, Technology scaling, General options and information, General options and information
@subsection Simulating more devices in parallel

If you need to simulate more devices of the same kind in parallel, you
can use the @option{m} (often called parallel multiplier) option which 
is available for all instances except transmission lines and sources 
(both independent and controlled). 

The parallel multiplier is implemented by multiplying by the value of 
@option{m} the element's matrix stamp, thus it cannot be used to accurately
simulate larger devices in integrated circuits. 

The netlist below show how to correctly use the parallel multiplier: 

@example
Multiple devices 

d1  2  0 mydiode  m=10

d01 1  0 mydiode
d02 1  0 mydiode
d03 1  0 mydiode
d04 1  0 mydiode
d05 1  0 mydiode
d06 1  0 mydiode
d07 1  0 mydiode
d08 1  0 mydiode
d09 1  0 mydiode
d10 1  0 mydiode

...
@end example

The @code{d1} instance connected between nodes 2 and 0  is equivalent
to the parallel @code{d01-d10} connected between 1 and 0.  

@node Technology scaling, Model binning, Simulating more devices in parallel, General options and information
@subsection Technology scaling
Still to be implemented and written.

@node Model binning, Elementary Devices, Technology scaling, General options and information
@subsection Model binning
Still to be implemented and written.

@node  Elementary Devices, Resistors, Model binning, Circuit Elements and Models
@section  Elementary Devices


@menu
* Resistors::                   
* Semiconductor Resistors::     
* Semiconductor Resistor Model (R)::  
* Capacitors::                  
* Semiconductor Capacitors::    
* Semiconductor Capacitor Model (C)::  
* Inductors::                   
* Inductor model::
* Coupled (Mutual) Inductors::  
* Switches::                    
* Switch Model (SW/CSW)::       
@end menu

@node  Resistors, Semiconductor Resistors, Elementary Devices, Elementary Devices
@subsection  Resistors

 General form:

@example
  RXXXXXXX n+ n- value <ac=val> <m=val> <scale=val> <temp=val> 
  +        <dtemp=val> <noisy=0|1>
@end example

 Examples:

@example
  R1 1 2 100
  RC1 12 17 1K
  R2 5 7 1K ac=2K
  RL 1 4 2K m=2
@end example

Ngspice has a fairly complex model for resistors. It can simulate both
discrete and semiconductor resistors. Semiconductor resistors in ngspice
means: resistors described by geometrical parameters. So, do not expect 
detailed modelling of semiconductor effects.

@option{n+} and @option{n-} are the two element nodes, @option{value} is 
the resistance (in ohms) and may be positive or negative but not zero. 

@sc{Hint}: If you need to simulate very small resistors (0.001 Ohm or 
less), you should use CCVS (transresistance), it is less efficient but 
improves overall numerical accuracy. Think about that a small resistance
is a large conductance.   
 
Ngspice can assign a resistor instance a different value for AC analysis,
specified using the @option{ac} keyword. This value must not be zero as 
described above. The AC resistance is used in AC analysis only (not Pole-Zero
nor noise).  If you do not specify the @option{ac} parameter, it is 
defaulted to @option{value}.

If you want to simulate temperature dependence of a resistor, you need 
to specify its temperature coefficients, using a @command{.model} line,
like in the example below:

@example
  RE1 1 2 700 std dtemp=5 
  
  .MODEL std tc1=0.001
@end example

Instance temperature is useful even if resistance does not varies with it, since
the thermal noise generated by a resistor depends on its absolute temperature. 

Resistors in ngspice generates two different noises: thermal and flicker. While 
thermal noise is always generated in the resistor, to add a flicker noise source
you have to add a @command{.model} card defining the flicker noise parameters.
It is possible to simulate resistors that do not generate any kind of noise 
using the @option{noisy} keyword  and assigning zero to it, as in the 
following example:

@example
  Rmd 134 57 1.5k noisy=0 
@end example

Ngspice calculates the nominal resistance as described below:

@tex
$$
    R_{nom} = {{{\rm VALUE} * {\rm scale}} \over m}
$$
$$
    R_{acnom} =  {{{\rm ac} * {\rm scale}} \over m}
$$
@end tex
@ifnottex
@example
                        Rnom = value * scale / m
			Racnom = ac * scale / m
@end example
@end ifnottex

If you are interested in temperature effects or noise equations, read
the following section on semiconductor resistors.

@node  Semiconductor Resistors, Semiconductor Resistor Model (R), Resistors, Elementary Devices
@subsection  Semiconductor Resistors

 General form:

@example
  RXXXXXXX n+ n- <value> <mname> <l=length> <w=width> <temp=val> 
  +        <dtemp=val> m=<val> <ac=val> <scale=val> <noisy = 0|1>
@end example


 Examples:

@example
  RLOAD 2 10 10K
  RMOD 3 7 RMODEL L=10u W=1u
@end example

This is the more general form of the resistor presented before (@pxref{Resistors}) 
and allows the modelling of temperature effects and for the calculation 
of the  actual resistance value from strictly geometric information and
the specifications of the process.  If @option{value} is specified, it 
overrides the geometric information and defines the resistance.  If 
@option{mname} is specified, then the resistance may be calculated from
the process information in the model @option{mname} and the given @option{length} 
and @option{width}. If @option{value} is not specified, then @option{mname}
and @option{length} must be specified.  If @option{width} is not specified,
then it is taken from the default width given in the model.  

The (optional) @option{temp} value is the temperature at which this device
is to operate, and overrides the temperature specification on the 
@command{.option} control line and the value specified in @option{dtemp}.  



@node  Semiconductor Resistor Model (R), Capacitors, Semiconductor Resistors, Elementary Devices
@subsection  Semiconductor Resistor Model (R)


The resistor model consists of process-related device data that allow
the resistance to be calculated from geometric information and to be
corrected for temperature.  The parameters available are:

@multitable {NARROW} {parameter measurement temperature} {ohm/@math{^o}C@math{^2}} {default} {example}
@item name   @tab parameter                         @tab units              @tab default @tab example
@item TC1    @tab first order temperature coeff.    @tab ohm/@math{^o}C     @tab 0.0
@item TC2    @tab second order temperature coeff.   @tab ohm/@math{^o}C@math{^2} @tab 0.0
@item RSH    @tab sheet resistance                  @tab ohm/[]             @tab -       @tab 50
@item DEFW   @tab default width                     @tab meters             @tab 1e-6    @tab 2e-6
@item NARROW @tab narrowing due to side etching     @tab meters             @tab 0.0     @tab 1e-7
@item SHORT  @tab shortening due to side etching    @tab meters             @tab 0.0     @tab 1e-7         
@item TNOM   @tab parameter measurement temperature @tab @math{^o}C         @tab 27      @tab 50
@item KF     @tab flicker noise coefficient         @tab -                  @tab 0.0     @tab 1e-25 
@item AF     @tab flicker noise exponent            @tab -                  @tab 0.0     @tab 1.0
@end multitable


The sheet resistance is used with the narrowing parameter and @option{l} 
and @option{w} from the resistor device to determine the nominal resistance 
by the formula:

@tex
$$
    R_{nom} = {\rm rsh} {l - {\rm SHORT} \over w - {\rm NARROW}}
$$
@end tex
@ifnottex
@example
                           l -  SHORT
                Rnom = rsh ----------
                           w - NARROW
@end example
@end ifnottex

@option{DEFW} is used to supply a default value for @option{w} if one is 
not specified for the device.  If either @option{rsh} or @option{l} is not 
specified, then the standard default resistance value of 1k Ohm is used.  
@option{TNOM} is used to override the circuit-wide value given on the 
@command{.options} control line where the parameters of this model have 
been measured at a different temperature. 

After the nominal resistance is calculated, it is adjusted for temperature 
by the formula:

@tex
$$
   R(T) = R({\rm TNOM}) \Bigl( 1 + TC_1 (T - {\rm TNOM}) + TC_2 (T-{\rm TNOM})^2 \Bigr)
$$
where $R({\rm TNOM}) = R_{nom} \vert R_{acnom}$.
@end tex
@ifnottex
@example
                                                     2
  R(T) = R(TNOM) [1 + TC  (T - TNOM) + TC  (T - TNOM) ]
                        1                2       
  where R(TNOM) = Rnom or Racnom
@end example
@end ifnottex

In the above formula, `@math{T}' represents the instance temperature, which can be
explicitly using the @option{temp} keyword or os calculated using the 
circuit temperature and @option{dtemp}, if present.

If both @option{temp} and @option{dtemp} are specified, the latter is ignored.

Ngspice improves spice's resistors noise model, adding flicker noise (1/f) to
it and the @option{noisy} keyword to simulate noiseless resistors. The thermal
noise in resistors is modelled according to the equation: 

@tex
$$
    \bar{i^2_R} = {{4kT} \over R} \Delta f
$$
@end tex
@ifnottex
@example
                         
                         ___ 
			  2  4 k T 
			 i = ----- df
			  r    R
@end example
@end ifnottex   

where "k" is the Boltzmann's constant, and "T" the instance temperature.

Flicker noise model is:

@tex
$$
    \bar{i^2_{Rfn}} = {{\rm KF} I^{\rm AF}_R \over f} \Delta f
$$
@end tex
@ifnottex
@example
                         
                          ____        AF
			   2     KF Ir  
			  i   = ------- df
			   Rfn     f 
@end example
@end ifnottex   
    

A small list of sheet resistances (in Ohm/[]) for conductors is shown below.
The table represents typical values for MOS processes in the 0.5 - 1 um 
range. The table is taken from: @emph{N. Weste, K. Eshraghian - Principles of 
CMOS VLSI Design 2nd Edition,  Addison Wesley}.

@multitable @columnfractions .55 .15 .15 .15 
@item Material @tab Min. @tab Typical @tab Max.
@item Intermetal (metal1 - metal2) @tab   0.005 @tab 0.007 @tab 0.1 
@item Top-metal (metal 3)          @tab   0.003 @tab 0.004 @tab 0.05
@item Polysilicon                  @tab   15    @tab 20    @tab 30
@item Silicide                     @tab   2     @tab 3     @tab 6
@item Diffusion(n+,p+)             @tab   10    @tab 25    @tab 100
@item Silicided diffusion          @tab   2     @tab 4     @tab 10
@item n-well                       @tab   1000  @tab 2000  @tab 5000
@end multitable


@node  Capacitors, Semiconductor Capacitors, Semiconductor Resistor Model (R), Elementary Devices
@subsection  Capacitors

 General form:

@example
  CXXXXXXX n+ n- <value> <mname> <m=val> <scale=val> <temp=val> 
  +        <dtemp=val> <ic=init_condition>
@end example

 Examples:

@example
  CBYP 13 0 1UF
  COSC 17 23 10U IC=3V
@end example

Ngspice provides a detailed model for capacitors.  Capacitors in the netlist can
be specified giving their capacitance or their geometrical and physical
characteristics. Following the original spice3 "convention", capacitors
specified by their geometrical or physical characteristics are called
"semiconductor capacitors" and are described in the next section.

In this first form @option{n+} and @option{n-} are the positive and negative 
element nodes, respectively and  @option{value} is the capacitance in Farads.

Capacitance can be specified in the instance line as in the examples above or
in a @command{.model} line, as in the example below:

@example
  C1 15 5 cstd
  C2  2 7 cstd
  
  .model cstd C cap=3n
@end example

Both capacitors have a capacitance of 3nF.

If you want to simulate temperature dependence of a capacitor, you need to
specify its temperature coefficients, using a @command{.model} line, like in the
example below:

@example
  CEB 1 2 1u cap1 dtemp=5 
  
  .MODEL cap1 C tc1=0.001
@end example


The (optional) initial condition is the initial (timezero) value of
capacitor voltage (in Volts).  Note that the initial conditions (if any)
apply 'only' if the @option{uic} option is specified on the @command{.tran}
control line.

Ngspice calculates the nominal capacitance as described below:

@tex
$$
    C_{nom} = {{{\rm value} * {\rm scale}} * m}
$$
@end tex
@ifnottex
@example
                        Cnom = value * scale * m
@end example
@end ifnottex


@node  Semiconductor Capacitors, Semiconductor Capacitor Model (C), Capacitors, Elementary Devices
@subsection  Semiconductor Capacitors

 General form:

@example
  CXXXXXXX n+ n- <value> <mname> <l=length> <w=width> <m=val> 
  +        <scale=val> <temp=val> <dtemp=val> <ic=init_condition>
@end example


 Examples:

@example
  CLOAD 2 10 10P
  CMOD 3 7 CMODEL L=10u W=1u
@end example


This is the more general form of the Capacitor presented in section
(@pxref{Capacitors}), and allows for the calculation of the actual capacitance 
value from strictly geometric information and the specifications of the process.
If @option{value} is specified, it defines the capacitance and both process and
geometrical information are discarded. If @option{value} is not specified, the
capacitance is calculated from information contained model @option{mname} and
the given length and width (@option{l}, @option{w} keywords, respectively). 
It is possible to specify  @option{mname} only, without geometrical dimensions
and set the capacitance in the @command{.model} line (@pxref{Capacitors}). 




@node  Semiconductor Capacitor Model (C), Inductors, Semiconductor Capacitors, Elementary Devices
@subsection  Semiconductor Capacitor Model (C)


The capacitor model contains process information that may be used to
compute the capacitance from strictly geometric information.

@multitable {NARROW} {parameter measurement temperature} {F/@math{^o}C@math{^2}} {default} {example}
@item name   @tab parameter                         @tab units                  @tab default @tab example
@item CAP    @tab model capacitance                 @tab F                      @tab 0.0     @tab 1e-6
@item CJ     @tab junction bottom capacitance       @tab F/meters@math{^2}      @tab -       @tab 5e-5
@item CJSW   @tab junction sidewall capacitance     @tab F/meters               @tab -       @tab 2e-11
@item DEFW   @tab default device width              @tab meters                 @tab 1e-6    @tab 2e-6
@item DEFL   @tab default device length             @tab meters                 @tab 0.0     @tab 1e-6
@item NARROW @tab narrowing due to side etching     @tab meters                 @tab 0.0     @tab 1e-7
@item SHORT  @tab shorting due to side etching      @tab meters                 @tab 0.0     @tab 1e-7
@item TC1    @tab first order temperature coeff.    @tab F/@math{^o}C           @tab 0.0     @tab 0.001
@item TC2    @tab second order temperature coeff.   @tab F/@math{^o}C@math{^2}  @tab 0.0     @tab 0.0001
@item TNOM   @tab parameter measurement temperature @tab @math{^o}C             @tab 27      @tab 50
@item DI     @tab relative dielectric constant      @tab F/m                    @tab 0.0     @tab 1
@item THICK  @tab insulator thickness               @tab meters                 @tab 0.0     @tab 1e-9
@end multitable


The capacitor has a capacitance computed as:

If @option{value} is specified on the instance line then

@tex
$$
   C_{nom} = {{{\rm value} * {\rm scale}} * m}
$$
@end tex
@ifnottex
@example
                   Cnom = value * scale * m
@end example
@end ifnottex

If model capacitance is specified then

@tex
$$
   C_{nom} = {{{\rm CAP} * {\rm scale}} * m}
$$
@end tex
@ifnottex
@example
                   Cnom = CAP * scale * m
@end example
@end ifnottex

If neither @option{value} nor @option{CAP} are specified, then geometrical and
physical parameters are take into account:


@tex
$$
  {\rm C_{0}} = {\rm CJ} (l - {\rm SHORT})
                       (w - {\rm NARROW}) +
              2 {\rm CJSW} (l - {\rm SHORT} + w -  {\rm NARROW})
$$
@end tex
@ifnottex
@example
            C0 = CJ (l - NARROW) (w - NARROW) +
                   2 CJSW (l - SHORT + w -  NARROW)
@end example
@end ifnottex

@option{CJ} can be explicitly given on the @command{.model} line or calculated
by physical parameters. When @option{CJ} is not given, is calculated as:

If @option{THICK} is not zero:

@tex

if {\rm DI } is specified:
$$
   {\rm CJ } = {{{\rm DI} * \epsilon_{0}}  \over {\rm THICK} }
$$

otherwise:

$$
   {\rm CJ } = {{ \epsilon_{SiO_{2}}}  \over {\rm THICK} }
$$

with:
$$
 \epsilon_{0} = 8.854214871e-12 {F \over m}
$$
$$ 
\epsilon_{SiO_{2}} = 3.4531479969e-11 {F \over m}
$$

@end tex
@ifnottex
@example
                        DI * eps
			        0
                   CJ = ---------   if DI is specified
		         THICK

                         eps
			    SiO
			       2
                   CJ = ---------   if DI is not specified
		         THICK

with:

eps =    8.854214871e-12 F/m
   0

eps    = 3.4531479969e-11 F/m
   SiO
      2

@end example
@end ifnottex

@tex
$$
   C_{nom} = {C_{0} * {\rm scale} * m}
$$
@end tex
@ifnottex
@example
                   Cnom = C0 * scale * m
@end example
@end ifnottex

After the nominal capacitance is calculated, it is adjusted for temperature 
by the formula:

@tex
$$
   C(T) = C({\rm TNOM}) \Bigl( 1 + TC_1 (T - {\rm TNOM}) + TC_2 (T-{\rm TNOM})^2 \Bigr)
$$
where $C({\rm TNOM}) = C_{nom}$.
@end tex
@ifnottex
@example
                                                     2
  C(T) = C(TNOM) [1 + TC  (T - TNOM) + TC  (T - TNOM) ]
                        1                2       
  where C(TNOM) = Cnom
@end example
@end ifnottex

In the above formula, `@math{T}' represents the instance temperature, which can be
explicitly using the @option{temp} keyword or os calculated using the 
circuit temperature and @option{dtemp}, if present.



@node  Inductors, Inductor model, Semiconductor Capacitor Model (C), Elementary Devices
@subsection  Inductors

 General form:

@example
  LYYYYYYY n+ n- <value> <mname> <nt=val> <m=val> <scale=val> <temp=val> 
  +        <dtemp=val> <ic=init_condition>
@end example


 Examples:

@example
     LLINK 42 69 1UH
     LSHUNT 23 51 10U IC=15.7MA
@end example

The inductor device implemented into ngspice has many enhancements over
the original one. @option{n+} and @option{n-} are the positive and negative 
element nodes, respectively. @option{value} is the inductance in Henries.

Inductance can be specified in the instance line as in the examples above 
or in a @command{.model} line, as in the example below:

@example
  L1 15 5 indmod1
  L2  2 7 indmod1
  
  .model indmod1 L ind=3n
@end example

Both inductors have an inductance of 3nH.

The @option{nt} is used in conjunction with a @command{.model} line, and
is used to specify the number of turns of the inductor. 

If you want to simulate temperature dependence of an inductor, you need
to specify its temperature coefficients, using a @command{.model} line,
like in the example below:

@example
  Lload 1 2 1u ind1 dtemp=5 
  
  .MODEL ind1 L tc1=0.001
@end example

The (optional) initial condition is the initial (timezero) value of
inductor current (in Amps) that flows from @option{n+}, through the 
inductor, to @option{n-}.  Note that the initial conditions (if any) 
apply only if the @option{UIC} option is specified on the @command{.tran} 
analysis line.

Ngspice calculates the nominal inductance as described below:

@tex
$$
    L_{nom} = {{{\rm value} * {\rm scale}} \over m}
$$
@end tex
@ifnottex
@example
                        Lnom = value * scale / m
@end example
@end ifnottex


@node Inductor model, Coupled (Mutual) Inductors, Inductors, Elementary Devices
@subsection Inductor model

The inductor model contains physical and geometrical information that 
may be used to compute the inductance of some common topologies like 
solenoids and toroids, wound in air or other material with constant
magnetic permeability. 

@multitable @columnfractions .15 .4 .2 .1 .1
@item name    @tab parameter @tab units @tab default @tab example
@item IND     @tab model inductance 
                          @tab H                 @tab 0.0  @tab 1e-3
@item CSECT   @tab Cross section
                          @tab meters@math{^2}   @tab 0.0  @tab 1e-3
@item LENGTH  @tab Length
                          @tab meters            @tab 0.0  @tab 1e-2
@item TC1     @tab first order temperature coeff.
                          @tab F/@math{^o}C              @tab 0.0  @tab 0.001
@item TC2     @tab second order temperature coeff.
                          @tab F/@math{^o}C@math{^2}     @tab 0.0  @tab 0.0001
@item TNOM    @tab parameter measurement temperature
                          @tab @math{^o}C                @tab 27   @tab 50			  			  
@item NT      @tab number of turns
                          @tab -                 @tab 0.0  @tab 10
@item MU      @tab relative magnetic permeability
                          @tab H/meters          @tab 0.0  @tab -
@end multitable

The inductor has an inductance computed as:

If @option{value} is specified on the instance line then

@tex
$$
   L_{nom} = {{{\rm value} * {\rm scale}} \over m}
$$
@end tex
@ifnottex
@example
                   Lnom = value * scale / m
@end example
@end ifnottex

If model inductance is specified then

@tex
$$
   L_{nom} = {{{\rm IND} * {\rm scale}} \over m}
$$
@end tex
@ifnottex
@example
                   Lnom = IND * scale / m
@end example
@end ifnottex

If neither @option{value} nor @option{IND} are specified, then geometrical
and physical parameters are take into account. In the following formulas 
@option{NT} refers to both instance and model parameter (instance parameter 
overrides model parameter):

If @option{LENGTH} is not zero:

@tex

if {\rm MU } is specified:
$$
   L_{nom} = {{{\rm MU} * \mu_0 * {\rm NT}^2 * {\rm CSECT}}  \over {\rm LENGTH} }
$$

otherwise:

$$
   L_{nom} = {{ \mu_0 * {\rm NT}^2 * {\rm CSECT}}  \over {\rm LENGTH} }
$$

with:
$$
 \mu_{0} = 1.25663706143592e-6 {H \over m}
$$

@end tex
@ifnottex
@example
                              2
                  MU * mu * NT * CSECT
			 0
           Lnom = --------------------   if MU is specified
                        LENGTH

                         
                         2
                  mu * NT * CSECT
                    0	       
           Lnom = ---------------   if MU is not specified
		      LENGTH

with:

mu =  1.25663706143592e-6  H/m
  0

@end example
@end ifnottex

After the nominal inductance is calculated, it is adjusted for temperature 
by the formula:

@tex
$$
   L(T) = L({\rm TNOM}) \Bigl( 1 + TC_1 (T - {\rm TNOM}) + TC_2 (T-{\rm TNOM})^2 \Bigr)
$$
where $L({\rm TNOM}) = L_{nom}$.
@end tex
@ifnottex
@example
                                                     2
  L(T) = L(TNOM) [1 + TC  (T - TNOM) + TC  (T - TNOM) ]
                        1                2       
  where L(TNOM) = Lnom
@end example
@end ifnottex

In the above formula, `@math{T}' represents the instance temperature, 
which can be explicitly using the @option{temp} keyword or calculated 
using the circuit temperature and @option{dtemp}, if present.


@node  Coupled (Mutual) Inductors, Switches, Inductor model, Elementary Devices
@subsection  Coupled (Mutual) Inductors

 General form:

@example
  KXXXXXXX LYYYYYYY LZZZZZZZ value
@end example


 Examples:

@example
  K43 LAA LBB 0.999
  KXFRMR L1 L2 0.87
@end example


LYYYYYYY and LZZZZZZZ are the names of the two coupled inductors, and
@option{value} is the coefficient of coupling, K, which must be greater than 0
and less than or equal to 1.  Using the 'dot' convention, place a 'dot'
on the first node of each inductor.



@node  Switches, Switch Model (SW/CSW), Coupled (Mutual) Inductors, Elementary Devices
@subsection  Switches

 General form:

@example
     SXXXXXXX N+ N- NC+ NC- MODEL <ON><OFF>
     WYYYYYYY N+ N- VNAM MODEL <ON><OFF>
@end example


 Examples:

@example
     s1 1 2 3 4 switch1 ON
     s2 5 6 3 0 sm2 off
     Switch1 1 2 10 0 smodel1
     w1 1 2 vclock switchmod1
     W2 3 0 vramp sm1 ON
     wreset 5 6 vclck lossyswitch OFF
@end example


Nodes 1 and 2 are the nodes between which the switch terminals are
connected.  The model name is mandatory while the initial conditions are
optional.  For the voltage controlled switch, nodes 3 and 4 are the
positive and negative controlling nodes respectively.  For the current
controlled switch, the controlling current is that through the specified
voltage source.  The direction of positive controlling current flow is
from the positive node, through the source, to the negative node.




@node  Switch Model (SW/CSW), , Switches, Elementary Devices
@subsection  Switch Model (SW/CSW)


The switch model allows an almost ideal switch to be described in NGSPICE.
The switch is not quite ideal, in that the resistance can not change
from 0 to infinity, but must always have a finite positive value.  By
proper selection of the on and off resistances, they can be effectively
zero and infinity in comparison to other circuit elements.  The
parameters available are:

@multitable @columnfractions .15 .4 .2 .1 .1
@item name @tab parameter @tab units @tab default @tab switch
@item VT @tab threshold voltage @tab Volts @tab 0.0 @tab S
@item IT @tab threshold current @tab Amps @tab 0.0 @tab W
@item VH @tab hysteresis voltage @tab Volts @tab 0.0 @tab S
@item IH @tab hysteresis current @tab Amps @tab 0.0 @tab W
@item RON @tab on resistance @tab Z @tab 1.0 @tab both
@item ROFF @tab off resistance @tab Z @tab 1/GMIN* @tab both
@end multitable



*(See the .OPTIONS control line for a description of GMIN, its default
value results in an off-resistance of 1.0e+12 ohms.)


The use of an ideal element that is highly nonlinear such as a switch
can cause large discontinuities to occur in the circuit node voltages.
A rapid change such as that associated with a switch changing state can
cause numerical roundoff or tolerance problems leading to erroneous
results or timestep difficulties.  The user of switches can improve the
situation by taking the following steps:

First, it is wise to set ideal switch impedances just high or low enough
to be negligible with respect to other circuit elements.  Using switch
impedances that are close to "ideal" in all cases aggravates the problem
of discontinuities mentioned above.  Of course, when modelling real
devices such as MOSFETS, the on resistance should be adjusted to a
realistic level depending on the size of the device being modelled.

If a wide range of ON to OFF resistance must be used in the switches
(ROFF/RON >1e+12), then the tolerance on errors allowed during transient
analysis should be decreased by using the .OPTIONS control line and
specifying TRTOL to be less than the default value of 7.0.  When
switches are placed around capacitors, then the option CHGTOL should
also be reduced.  Suggested values for these two options are 1.0 and
1e-16 respectively.  These changes inform NGSPICE to be more careful
around the switch points so that no errors are made due to the rapid
change in the circuit.



@node Voltage and Current Sources, Transmission Lines,  ,Circuit Elements and Models
@section Voltage and Current Sources


@menu
* Independent Sources::         
* Linear Dependent Sources::    
* Non-linear Dependent Sources::  
@end menu

@node  Independent Sources, Linear Dependent Sources, Voltage and Current Sources, Voltage and Current Sources
@subsection  Independent Sources

 General form:

@example
     VXXXXXXX N+ N- <<DC> DC/TRAN VALUE> <AC <ACMAG <ACPHASE>>>
     +       <DISTOF1 <F1MAG <F1PHASE>>> <DISTOF2 <F2MAG <F2PHASE>>>
     IYYYYYYY N+ N- <<DC> DC/TRAN VALUE> <AC <ACMAG <ACPHASE>>>
     +       <DISTOF1 <F1MAG <F1PHASE>>> <DISTOF2 <F2MAG <F2PHASE>>>
@end example


 Examples:

@example
     VCC 10 0 DC 6
     VIN 13 2 0.001 AC 1 SIN(0 1 1MEG)
     ISRC 23 21 AC 0.333 45.0 SFFM(0 1 10K 5 1K)
     VMEAS 12 9
     VCARRIER 1 0 DISTOF1 0.1 -90.0
     VMODULATOR 2 0 DISTOF2 0.01
     IIN1 1 5 AC 1 DISTOF1 DISTOF2 0.001
@end example


N+ and N- are the positive and negative nodes, respectively.  Note that
voltage sources need not be grounded.  Positive current is assumed to
flow from the positive node, through the source, to the negative node.
A current source of positive value forces current to flow out of the N+
node, through the source, and into the N- node.  Voltage sources, in
addition to being used for circuit excitation, are the 'ammeters' for
NGSPICE, that is, zero valued voltage sources may be inserted into the
circuit for the purpose of measuring current.  They of course have no
effect on circuit operation since they represent short-circuits.


DC/TRAN is the dc and transient analysis value of the source.  If the
source value is zero both for dc and transient analyses, this value may
be omitted.  If the source value is time-invariant (e.g., a power
supply), then the value may optionally be preceded by the letters DC.


ACMAG is the ac magnitude and ACPHASE is the ac phase.  The source is
set to this value in the ac analysis.  If ACMAG is omitted following the
keyword AC, a value of unity is assumed.  If ACPHASE is omitted, a value
of zero is assumed.  If the source is not an ac small-signal input, the
keyword AC and the ac values are omitted.


DISTOF1 and DISTOF2 are the keywords that specify that the independent
source has distortion inputs at the frequencies F1 and F2 respectively
(see the description of the .DISTO control line).  The keywords may be
followed by an optional magnitude and phase.  The default values of the
magnitude and phase are 1.0 and 0.0 respectively.


Any independent source can be assigned a time-dependent value for
transient analysis.  If a source is assigned a time-dependent value, the
time-zero value is used for dc analysis.  There are five independent
source functions: pulse, exponential, sinusoidal, piece-wise linear, and
single-frequency FM.  If parameters other than source values are omitted
or set to zero, the default values shown are assumed.  (TSTEP is the
printing increment and TSTOP is the final time (see the .TRAN control
line for explanation)).


@menu
* Pulse::                       
* Sinusoidal::                  
* Exponential::                 
* Piece-Wise Linear::           
* Single-Frequency FM::         
@end menu

@node Pulse, Sinusoidal, Independent Sources, Independent Sources
@subsubsection Pulse

 General form:

@example
     PULSE(V1 V2 TD TR TF PW PER)
@end example


 Examples:

@example
     VIN 3 0 PULSE(-1 1 2NS 2NS 2NS 50NS 100NS)
@end example


@multitable @columnfractions .33 .33 .33
@item parameter @tab default value @tab units
@item V1 (initial value) @tab @tab Volts or Amps
@item V2 (pulsed value) @tab @tab Volts or Amps
@item TD (delay time) @tab 0.0 @tab seconds
@item TR (rise time) @tab TSTEP @tab seconds
@item TF (fall time) @tab TSTEP @tab seconds
@item PW (pulse width) @tab TSTOP @tab seconds
@item PER(period) @tab TSTOP @tab seconds
@end multitable

A single pulse so specified is described by the following table:


@multitable @columnfractions .3 .3
@item time @tab value
@item 0 @tab V1
@item TD @tab V1
@item TD+TR @tab V2
@item TD+TR+PW @tab V2
@item TD+TR+PW+TF @tab V1
@item TSTOP @tab V1
@end multitable


Intermediate points are determined by linear interpolation.




@node Sinusoidal, Exponential, Pulse, Independent Sources
@subsubsection Sinusoidal

 General form:

@example
     SIN(VO VA FREQ TD THETA)
@end example


 Examples:

@example
     VIN 3 0 SIN(0 1 100MEG 1NS 1E10)
@end example


@multitable @columnfractions .3 .3 .3
@item parameters @tab default value @tab units
@item VO (offset) @tab @tab Volts or Amps
@item VA (amplitude) @tab @tab Volts or Amps
@item FREQ (frequency) @tab 1/TSTOP @tab Hz
@item TD (delay) @tab 0.0 @tab seconds
@item THETA (damping factor) @tab 0.0 @tab 1/seconds
@end multitable


The shape of the waveform is described by the following table:

@tex
$$
V(t) = \cases{V0 ,&if $0\leq t<TD$\cr
              V0 + VA e^{(t - TD) THETA}sin(2 J FREQ(t + TD)), &if $TD < t \leq TSTOP$\cr }
$$
@end tex
@ifnottex
@example
time          value
------------------------------------------------------------
0 to TD       VO
                       -(t - TD)THETA
TD to TSTOP   VO + VA e               sin(2 J FREQ (t + TD))
@end example
@end ifnottex


@node Exponential, Piece-Wise Linear, Sinusoidal, Independent Sources
@subsubsection Exponential

 General Form:

@example
     EXP(V1 V2 TD1 TAU1 TD2 TAU2)
@end example


 Examples:

@example
     VIN 3 0 EXP(-4 -1 2NS 30NS 60NS 40NS)
@end example


@example
parameter                   default value   units
---------------------------------------------------------
V1   (initial value)                        Volts or Amps
V2   (pulsed value)                         Volts or Amps
TD1  (rise delay time)      0.0             seconds
TAU1 (rise time constant)   TSTEP           seconds
TD2  (fall delay time)      TD1+TSTEP       seconds
TAU2 (fall time constant)   TSTEP           seconds
@end example


The shape of the waveform is described by the following table:

@tex
Let $V21 = V2 - V1$, $V12=V1 - V2$:
$$
V(t) = \cases{V1 ,&if $0\leq t<TD1$\cr
              V1 + V21 \left( 1-e^{(t - TD1)\over TAU1}\right), &if $TD1 \leq t < TD2$\cr
              V1 + V21 \left( 1-e^{(t - TD1)\over TAU1}\right) + V12 \left( 1-e^{(t - TD2)\over TAU2}\right), &if $TD2 \leq t \leq TSTOP$\cr}
$$
@end tex
@ifnottex
@example
time           value
---------------------------------------------------------------------
0 to TD1      V1
                           |    -(t - TD1)|
TD1 to TD2    V1 + (V2-V1).|1-e ----------|
                           |       TAU1   |

                           |    -(t - TD1)|           |   -(t - TD2)|
TD2 to TSTOP  V1 + (V2-V1).|1-e ----------| + (V1-V2).|1-e ---------|
                           |        TAU1  |           |       TAU2  |
@end example
@end ifnottex

@node Piece-Wise Linear, Single-Frequency FM, Exponential, Independent Sources
@subsubsection Piece-Wise Linear

 General Form:

@example
     PWL(T1 V1 <T2 V2 T3 V3 T4 V4 ...>)
@end example


 Examples:

@example
     VCLOCK 7 5 PWL(0 -7 10NS -7 11NS -3 17NS -3 18NS -7 50NS -7)
@end example




Each pair of values (Ti, Vi) specifies that the value of the source is
Vi (in Volts or Amps) at time=Ti.  The value of the source at
intermediate values of time is determined by using linear interpolation
on the input values.



@node Single-Frequency FM,  , Piece-Wise Linear, Independent Sources
@subsubsection Single-Frequency FM

 General Form:

@example
     SFFM(VO VA FC MDI FS)
@end example


 Examples:

@example
     V1 12 0 SFFM(0 1M 20K 5 1K)
@end example



@example
parameter                 default value   units
------------------------------------------------------
VO  (offset)                              Volts or Amps
VA  (amplitude)                           Volts or Amps
FC  (carrier frequency)   1/TSTOP         Hz
MDI (modulation index)
FS  (signal frequency)    1/TSTOP         Hz
@end example


The shape of the waveform is described by the following equation:

@tex
$$
  V(t)=V_O  + V_A  \sin\left| 2 J FC t + MDI \sin(2 J FS t)\right|
$$
@end tex
@ifnottex
@example
                  |                            |
  V(t)=V  + V  sin 2 J FC t + MDI sin(2 J FS t)
        O    A    |                            |
@end example
@end ifnottex





@node  Linear Dependent Sources, Non-linear Dependent Sources, Independent Sources, Voltage and Current Sources
@subsection  Linear Dependent Sources


NGSPICE allows circuits to contain linear dependent sources characterized
by any of the four equations

@tex
$$
   i = g v  \qquad   v = e v  \qquad   i = f i  \qquad   v = h i
$$
@end tex
@ifnottex
@example
   i = g v          v = e v          i = f i          v = h i
@end example
@end ifnottex

where g, e, f, and h are constants representing transconductance,
voltage gain, current gain, and transresistance, respectively.


@menu
* Linear Voltage-Controlled Current Sources::  
* Linear Voltage-Controlled Voltage Sources::  
* Linear Current-Controlled Current Sources::  
* Linear Current-Controlled Voltage Sources::  
@end menu



@node Linear Voltage-Controlled Current Sources, Linear Voltage-Controlled Voltage Sources, Linear Dependent Sources, Linear Dependent Sources
@subsubsection Linear Voltage-Controlled Current Sources

 General form:

@example
     GXXXXXXX N+ N- NC+ NC- VALUE
@end example


 Examples:

@example
     G1 2 0 5 0 0.1MMHO
@end example


N+ and N- are the positive and negative nodes, respectively.  Current
flow is from the positive node, through the source, to the negative
node.  NC+ and NCare the positive and negative controlling nodes,
respectively.  VALUE is the transconductance (in mhos).





@node Linear Voltage-Controlled Voltage Sources, Linear Current-Controlled Current Sources, Linear Voltage-Controlled Current Sources, Linear Dependent Sources
@subsubsection Linear Voltage-Controlled Voltage Sources

 General form:

@example
     EXXXXXXX N+ N- NC+ NC- VALUE
@end example


 Examples:

@example
     E1 2 3 14 1 2.0
@end example


N+ is the positive node, and N- is the negative node.  NC+ and NC- are
the positive and negative controlling nodes, respectively.  VALUE is the
voltage gain.





@node Linear Current-Controlled Current Sources, Linear Current-Controlled Voltage Sources, Linear Voltage-Controlled Voltage Sources, Linear Dependent Sources
@subsubsection Linear Current-Controlled Current Sources

 General form:

@example
     FXXXXXXX N+ N- VNAM VALUE
@end example


 Examples:

@example
     F1 13 5 VSENS 5
@end example


N+ and N- are the positive and negative nodes, respectively.  Current
flow is from the positive node, through the source, to the negative
node.  VNAM is the name of a voltage source through which the
controlling current flows.  The direction of positive controlling
current flow is from the positive node, through the source, to the
negative node of VNAM.  VALUE is the current gain.





@node Linear Current-Controlled Voltage Sources,  , Linear Current-Controlled Current Sources, Linear Dependent Sources
@subsubsection Linear Current-Controlled Voltage Sources

 General form:

@example
     HXXXXXXX N+ N- VNAM VALUE
@end example


 Examples:

@example
     HX 5 17 VZ 0.5K
@end example


N+ and N- are the positive and negative nodes, respectively.  VNAM is
the name of a voltage source through which the controlling current
flows.  The direction of positive controlling current flow is from the
positive node, through the source, to the negative node of VNAM.  VALUE
is the transresistance (in ohms).





@node  Non-linear Dependent Sources,  , Linear Dependent Sources, Voltage and Current Sources
@subsection  Non-linear Dependent Sources

 General form:

@example
     BXXXXXXX N+ N- <I=EXPR> <V=EXPR>
@end example


 Examples:

@example
     B1 0 1 I=cos(v(1))+sin(v(2))
     B1 0 1 V=ln(cos(log(v(1,2)^2)))-v(3)^4+v(2)^v(1)
     B1 3 4 I=17
     B1 3 4 V=exp(pi^i(vdd))
@end example



N+ is the positive node, and N- is the negative node.  The values of the
V and I parameters determine the voltages and currents across and
through the device, respectively.  If I is given then the device is a
current source, and if V is given the device is a voltage source.  One
and only one of these parameters must be given.

The small-signal AC behaviour of the nonlinear source is a linear
dependent source (or sources) with a proportionality constant equal to
the derivative (or derivatives) of the source at the DC operating point.


The expressions given for V and I may be any function of voltages and
currents through voltage sources in the system.  The following functions
of real variables are defined:

@multitable @columnfractions .2 .2 .2 .2
@item abs @tab asinh @tab cosh @tab sin
@item acos @tab atan @tab exp @tab sinh
@item acosh @tab atanh @tab ln @tab sqrt
@item asin @tab cos @tab log @tab tan
@end multitable

The function "u" is the unit step function, with a value of one for
arguments greater than zero and a value of zero for arguments less than
zero.  The function "uramp" is the integral of the unit step: for an
input x, the value is zero if x is less than zero, or if x is greater
than zero the value is x. The function "u2" returns a value of zero for
arguments less than zero, one for arguments greater than one and assumes
the value of the argument between these limits .These three functions are 
useful in sythesizing piece-wise non-linear functions, though convergence 
may be adversely affected.

Note: "u2" function has been introduced in rework-11.

The following standard operators are defined:


@example
+       -       *       /       @{ @}      unary -
@end example


If the argument of log, ln, or sqrt becomes less than zero, the absolute
value of the argument is used.  If a divisor becomes zero or the
argument of log or ln becomes zero, an error will result.  Other
problems may occur when the argument for a function in a partial
derivative enters a region where that function is undefined.


To get time into the expression you can integrate the current from a
constant current source with a capacitor and use the resulting voltage
(don't forget to set the initial voltage across the capacitor).
Non-linear resistors, capacitors, and inductors may be synthesized with
the nonlinear dependent source.  Non-linear resistors are obvious.
Nonlinear capacitors and inductors are implemented with their linear
counterparts by a change of variables implemented with the nonlinear
dependent source.  The following subcircuit will implement a nonlinear
capacitor:

@example
  .Subckt nlcap   pos neg
  * Bx: calculate f(input voltage)
  Bx   1    0    v = f(v(pos,neg))
  * Cx: linear capacitance
  Cx   2    0    1
  * Vx: Ammeter to measure current into the capacitor
  Vx   2    1    DC 0Volts
  * Drive the current through Cx back into the circuit
  Fx   pos  neg  Vx 1
  .ends
@end example


Non-linear inductors are similar.




@node  Transmission Lines, Transistors and Diodes, Voltage and Current Sources, Circuit Elements and Models
@section  Transmission Lines



@menu
* Lossless Transmission Lines::  
* Lossy Transmission Lines::    
* Lossy Transmission Line Model (LTRA)::  
* Uniform Distributed RC Lines (Lossy)::  
* Uniform Distributed RC Model (URC)::  
@end menu

@node  Lossless Transmission Lines, Lossy Transmission Lines, Transmission Lines, Transmission Lines
@subsection  Lossless Transmission Lines

 General form:

@example
  TXXXXXXX N1 N2 N3 N4 Z0=VALUE <TD=VALUE> <F=FREQ <NL=NRMLEN>>
  +                    <IC=V1, I1, V2, I2>
@end example


 Examples:

@example
  T1 1 0 2 0 Z0=50 TD=10NS
@end example


N1 and N2 are the nodes at port 1; N3 and N4 are the nodes at port 2.
Z0 is the characteristic impedance.  The length of the line may be
expressed in either of two forms.  The transmission delay, TD, may be
specified directly (as TD=10ns, for example).  Alternatively, a
frequency F may be given, together with NL, the normalized electrical
length of the transmission line with respect to the wavelength in the
line at the frequency F.  If a frequency is specified but NL is omitted,
0.25 is assumed (that is, the frequency is assumed to be the
quarter-wave frequency).  Note that although both forms for expressing
the line length are indicated as optional, one of the two must be
specified.

Note that this element models only one propagating mode.  If all four
nodes are distinct in the actual circuit, then two modes may be excited.
To simulate such a situation, two transmission-line elements are
required.  (see the example in Appendix A for further clarification.)

The (optional) initial condition specification consists of the voltage
and current at each of the transmission line ports.  Note that the
initial conditions (if any) apply 'only' if the UIC option is specified
on the .TRAN control line.

Note that a lossy transmission line (see below) with zero loss may be
more accurate than than the lossless transmission line due to
implementation details.




@node  Lossy Transmission Lines, Lossy Transmission Line Model (LTRA), Lossless Transmission Lines, Transmission Lines
@subsection  Lossy Transmission Lines

 General form:

@example
  OXXXXXXX N1 N2 N3 N4 MNAME
@end example


 Examples:

@example
  O23 1 0 2 0 LOSSYMOD
  OCONNECT 10 5 20 5 INTERCONNECT
@end example



This is a two-port convolution model for singleconductor lossy
transmission lines.  N1 and N2 are the nodes at port 1; N3 and N4 are
the nodes at port 2.  Note that a lossy transmission line with zero loss
may be more accurate than than the lossless transmission line due to
implementation details.



@node  Lossy Transmission Line Model (LTRA), Uniform Distributed RC Lines (Lossy), Lossy Transmission Lines, Transmission Lines
@subsection  Lossy Transmission Line Model (LTRA)


The uniform RLC/RC/LC/RG transmission line model (referred to as the
LTRA model henceforth) models a uniform constant-parameter distributed
transmission line.  The RC and LC cases may also be modelled using the
URC and TRA models; however, the newer LTRA model is usually faster and
more accurate than the others.  The operation of the LTRA model is based
on the convolution of the transmission line's impulse responses with its
inputs (see [8]).

The LTRA model takes a number of parameters, some of which must be given
and some of which are optional.

@multitable @columnfractions .15 .4 .2 .1 .1
@item name @tab parameter @tab units/type @tab default @tab example
@item name @tab parameter @tab units/type @tab default @tab example
@item R @tab resistance/length @tab Z/unit @tab 0.0 @tab 0.2
@item L @tab inductance/length @tab henrys/unit @tab 0.0 @tab 9.13e-9
@item G @tab conductance/length @tab mhos/unit @tab 0.0 @tab 0.0
@item C @tab capacitance/length @tab farads/unit @tab 0.0 @tab 3.65e-12
@item LEN @tab length of line @tab no default @tab 1.0
@item REL @tab breakpoint control @tab arbitrary unit @tab 1 @tab 0.5
@item ABS @tab breakpoint control @tab 1 @tab 5
@item NOSTEPLIMIT @tab don't limit timestep to less than line delay
      @tab flag @tab not set @tab set
@item NOCONTROL @tab don't do complex timestep control
      @tab flag @tab not set @tab set
@item LININTERP @tab use linear interpolation
      @tab flag @tab not set @tab set
@item MIXEDINTERP @tab use linear when quadratic seems bad
      @tab not set @tab set
@item COMPACTREL @tab special reltol for history compaction
      @tab flag @tab RELTOL @tab 1.0e-3
@item COMPACTABS @tab special abstol for history compaction
      @tab ABSTOL @tab 1.0e-9
@item TRUNCNR @tab use Newton-Raphson method for timestep control
      @tab flag @tab not set @tab set
@item TRUNCDONTCUT @tab don't limit timestep to keep impulse-response
errors low @tab flag @tab not set @tab set
@end multitable


The following types of lines have been implemented so far: RLC (uniform
transmission line with series loss only), RC (uniform RC line), LC
(lossless transmission line), and RG (distributed series resistance and
parallel conductance only).  Any other combination will yield erroneous
results and should not be tried.  The length LEN of the line must be
specified.

NOSTEPLIMIT is a flag that will remove the default restriction of
limiting time-steps to less than the line delay in the RLC case.
NOCONTROL is a flag that prevents the default limiting of the time-step
based on convolution error criteria in the RLC and RC cases.  This
speeds up simulation but may in some cases reduce the accuracy of
results.  LININTERP is a flag that, when specified, will use linear
interpolation instead of the default quadratic interpolation for
calculating delayed signals.  MIXEDINTERP is a flag that, when
specified, uses a metric for judging whether quadratic interpolation is
not applicable and if so uses linear interpolation; otherwise it uses
the default quadratic interpolation.  TRUNCDONTCUT is a flag that
removes the default cutting of the time-step to limit errors in the
actual calculation of impulse-response related quantities.  COMPACTREL
and COMPACTABS are quantities that control the compaction of the past
history of values stored for convolution.  Larger values of these lower
accuracy but usually increase simulation speed.  These are to be used
with the TRYTOCOMPACT option, described in the .OPTIONS section.
TRUNCNR is a flag that turns on the use of Newton-Raphson iterations to
determine an appropriate timestep in the timestep control routines. The
default is a trial and error procedure by cutting the previous timestep
in half.  REL and ABS are quantities that control the setting of
breakpoints.

The option most worth experimenting with for increasing the speed of
simulation is REL.  The default value of 1 is usually safe from the
point of view of accuracy but occasionally increases computation time.
A value greater than 2 eliminates all breakpoints and may be worth
trying depending on the nature of the rest of the circuit, keeping in
mind that it might not be safe from the viewpoint of accuracy.
Breakpoints may usually be entirely eliminated if it is expected the
circuit will not display sharp discontinuities.  Values between 0 and 1
are usually not required but may be used for setting many breakpoints.

COMPACTREL may also be experimented with when the option TRYTOCOMPACT is
specified in a .OPTIONS card.  The legal range is between 0 and 1.
Larger values usually decrease the accuracy of the simulation but in
some cases improve speed.  If TRYTOCOMPACT is not specified on a
.OPTIONS card, history compaction is not attempted and accuracy is high.
NOCONTROL, TRUNCDONTCUT and NOSTEPLIMIT also tend to increase speed at
the expense of accuracy.



@node  Uniform Distributed RC Lines (Lossy), Uniform Distributed RC Model (URC), Lossy Transmission Line Model (LTRA), Transmission Lines
@subsection  Uniform Distributed RC Lines (Lossy)

 General form:

@example
  UXXXXXXX N1 N2 N3 MNAME L=LEN <N=LUMPS>
@end example


 Examples:

@example
  U1 1 2 0 URCMOD L=50U
  URC2 1 12 2 UMODL l=1MIL N=6
@end example



N1 and N2 are the two element nodes the RC line connects, while N3 is
the node to which the capacitances are connected.  MNAME is the model
name, LEN is the length of the RC line in meters.  LUMPS, if specified,
is the number of lumped segments to use in modelling the RC line (see the
model description for the action taken if this parameter is omitted).



@node  Uniform Distributed RC Model (URC),  , Uniform Distributed RC Lines (Lossy), Transmission Lines
@subsection  Uniform Distributed RC Model (URC)


The URC model is derived from a model proposed by L.  Gertzberrg in
1974.  The model is accomplished by a subcircuit type expansion of the
URC line into a network of lumped RC segments with internally generated
nodes.  The RC segments are in a geometric progression, increasing
toward the middle of the URC line, with @math{K} as a proportionality
constant.  The number of lumped segments used, if not specified for the
URC line device, is determined by the following formula:


@tex
$$
    N = { \log \left|
              F_{\rm max} {R\over L}{C \over L} 2 J L^2
              \left| (K - 1) \over K \right|^2
          \right| \over \log K }
$$
@end tex
@ifnottex
@example
                                       2
               |     R C        |(K-1)|  |
                     _ _      2
            log|F        2 J L  |-----|  |
                 max
               |     L L        |  K  |  |

       N =  ------------------------------
                             log K
@end example
@end ifnottex


The URC line is made up strictly of resistor and capacitor segments
unless the ISPERL parameter is given a nonzero value, in which case the
capacitors are replaced with reverse biased diodes with a zero-bias
junction capacitance equivalent to the capacitance replaced, and with a
saturation current of ISPERL amps per meter of transmission line and an
optional series resistance equivalent to RSPERL ohms per meter.

@multitable @columnfractions .1 .45 .1 .15 .1 .1
@item name   @tab parameter
                        @tab units @tab default @tab example
@item K      @tab Propagation Constant
                        @tab - @tab 2.0 @tab 1.2
@item FMAX   @tab Maximum Frequency of interest
                        @tab Hz @tab 1.0G @tab 6.5Meg     
@item RPERL  @tab Resistance per unit length
                        @tab Z/m @tab 1000 @tab 10 
@item CPERL  @tab Capacitance per unit length
                        @tab F/m @tab 1.0e-15 @tab 1pF
@item ISPERL @tab Saturation Current per unit length
                        @tab A/m @tab 0 @tab - 
@item RSPERL @tab Diode Resistance per unit length
                        @tab Z/m @tab 0 @tab -
@end multitable



@node  Transistors and Diodes,  , Transmission Lines, Circuit Elements and Models
@section  Transistors and Diodes


The area factor used on the diode, BJT, JFET, and MESFET devices
determines the number of equivalent parallel devices of a specified
model.  The affected parameters are marked with an asterisk under the
heading 'area' in the model descriptions below.  Several geometric
factors associated with the channel and the drain and source diffusions
can be specified on the MOSFET device line.

Two different forms of initial conditions may be specified for some
devices.  The first form is included to improve the dc convergence for
circuits that contain more than one stable state.  If a device is
specified OFF, the dc operating point is determined with the terminal
voltages for that device set to zero.  After convergence is obtained,
the program continues to iterate to obtain the exact value for the
terminal voltages.  If a circuit has more than one dc stable state, the
OFF option can be used to force the solution to correspond to a desired
state.  If a device is specified OFF when in reality the device is
conducting, the program still obtains the correct solution (assuming the
solutions converge) but more iterations are required since the program
must independently converge to two separate solutions.  The .NODESET
control line serves a similar purpose as the OFF option.  The .NODESET
option is easier to apply and is the preferred means to aid convergence.

The second form of initial conditions are specified for use with the
transient analysis.  These are true 'initial conditions' as opposed to
the convergence aids above.  See the description of the .IC control line
and the .TRAN control line for a detailed explanation of initial
conditions.

@menu
* Junction Diodes::             
* Diode Model (D)::
* Diode Equations::             
* Bipolar Junction Transistors (BJTs)::  
* BJT Models (NPN/PNP)::        
* Junction Field-Effect Transistors (JFETs)::  
* JFET Models (NJF/PJF)::       
* MOSFETs::                     
* MOSFET Models (NMOS/PMOS)::   
* MESFETs::                     
* MESFET Models (NMF/PMF)::     
@end menu



@node  Junction Diodes, Diode Model (D), Transistors and Diodes, Transistors and Diodes
@subsection  Junction Diodes

 General form:

@example
  DXXXXXXX n+ n- mname <area=val> <m=val> <pj=val> <off> <ic=vd> <temp=val> 
  +                    <dtemp=val>
@end example


 Examples:

@example
  DBRIDGE 2 10 DIODE1
  DCLMP 3 7 DMOD 3.0 IC=0.2
@end example


The pn junction (diode) implemented in NGSPICE expands the original 
spice's implementation. Perimetral effects and high injection level
have been introduced into the original model and temperature dependence
of some parameters has been added. 

@option{n+} and @option{n-} are the positive and negative nodes, respectively.
@option{mname} is the model name, @option{area} is the area factor, @option{pj}
is the perimeter factor, and @option{off} indicates an (optional)starting 
condition on the device for dc analysis.  If the area factor is omitted, 
a value of 1.0 is assumed. The (optional) initial condition specification 
using @option{ic} is intended for use with the @option{uic} option on 
the @code{.tran} control line, when a transient analysis is desired starting 
from other than the quiescent operating point. You should supply the inital 
voltage across the diode there. The (optional) @option{temp} value is 
the temperature at which this device is to operate, and overrides the 
temperature specification on the @code{.option} control line. As always, 
instance temperature can be specified as an offset to the circuit 
temperature with the @option{dtemp} option.



@node  Diode Model (D), Diode Equations, Junction Diodes, Transistors and Diodes
@subsection  Diode Model (D)


The dc characteristics of the diode are determined by the parameters 
@option{IS} and @option{N}.  An ohmic resistance, @option{RS}, is 
included. Charge storage effects are modelled by a transit time, 
@option{TT}, and a nonlinear depletion layer capacitance which is 
determined by the parameters @option{CJO}, @option{VJ}, and @option{M}.
The temperature dependence of the saturation current is defined by the
parameters @option{EG}, the energy and @option{XTI}, the saturation 
current temperature exponent. The nominal temperature at which these 
parameters were measured is @option{TNOM}, which defaults to the 
circuit-wide value specified on the @code{.options} control line.
Reverse breakdown is modelled by an exponential increase in the 
reverse diode current and is determined by the parameters @option{BV} 
and @option{IBV} (both of which are positive numbers).

@sc{Junction DC parameters}
@multitable @columnfractions .10 .40 .1 .15 .15 .10
@item name @tab parameter @tab units @tab default @tab example @tab scale factor
@item BV        @tab reverse breakdown voltage @tab V @tab infinite @tab 40.0
@item IBV       @tab current at breakdown voltage @tab A @tab 1.0e-3 @tab 1.0e-4 
@item IK (IKF)  @tab forward knee current @tab A @tab 1.0e-3 @tab 1.0e-6 
@item IK        @tab reverse knee current @tab A @tab 1.0e-3 @tab 1.0e-6
@item IS (JS)   @tab saturation current   @tab A @tab 1.0e-14 @tab 1.0e-16 @tab area
@item JSW       @tab Sidewall saturation current   @tab A @tab 1.0e-14 @tab 1.0e-15 @tab perim.
@item N         @tab emission coefficient @tab - @tab 1 @tab 1.5 
@item RS        @tab ohmic resistance     @tab Ohm @tab 0 @tab 100 @tab 1/area
@end multitable

@sc{Junction capacitance parameters}
@multitable @columnfractions .10 .40 .1 .15 .15 .10 
@item name @tab parameter @tab units @tab default @tab example @tab scale factor
@item CJO (CJ0)  @tab zero-bias junction bottowall capacitance @tab F @tab 0.0 @tab 2pF @tab area
@item CJP (CJSW) @tab zero-bias junction sidewall capacitance @tab F @tab 0.0 @tab .1pF @tab perim.
@item FC         @tab coefficient for forward-bias depletion bottomwall capacitance formula
                 @tab - @tab 0.5 @tab -
@item FCS        @tab coefficient for forward-bias depletion sidewall capacitance formula 
                 @tab - @tab 0.5 @tab -
@item M (MJ)     @tab Area junction grading coefficient @tab - @tab 0.5 @tab 0.5
@item MJSW       @tab Periphery junction grading coefficient @tab - @tab 0.33 @tab 0.5		 
@item VJ         @tab junction potential @tab V @tab 1 @tab 0.6
@item PHP        @tab Periphery junction potential @tab V @tab 1 @tab 0.6
@item TT         @tab transit-time @tab sec @tab 0 @tab 0.1ns
@end multitable

@sc{Temperature effects}
@multitable @columnfractions .10 .40 .1 .15 .15 .10
@item name @tab parameter @tab units @tab default @tab example @tab scale factor
@item EG   @tab activation energy @tab eV @tab 1.11 @tab 1.11 Si
@item      @tab                   @tab    @tab      @tab 0.69 Sbd 
@item      @tab                   @tab    @tab      @tab 0.67 Ge
@item TM1  @tab 1st order tempco for MJ @tab 1/@math{^o}C @tab 0.0 @tab -
@item TM2  @tab 2nd order tempco for MJ @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab -
@item TNOM @tab parameter measurement temperature @tab C @tab 27 @tab 50
@item TRS  @tab 1st order tempco for RS @tab 1/@math{^o}C   @tab 0.0 @tab -
@item TRS2 @tab 2nd order tempco for RS @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab -
@item TTT1 @tab 1st order tempco for TT @tab 1/@math{^o}C @tab 0.0 @tab -
@item TTT2 @tab 2nd order tempco for TT @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab -
@item XTI  @tab saturation-current temp. exp @tab - @tab 3.0 @tab 3.0 pn 
@item      @tab                              @tab   @tab     @tab 2.0 Sbd
@end multitable

@sc{Noise modeling}
@multitable @columnfractions .10 .40 .1 .15 .15 .10
@item name @tab parameter @tab units @tab default @tab example @tab scale factor
@item KF   @tab flicker noise coefficient @tab - @tab 0
@item AF   @tab flicker noise exponent @tab - @tab 1
@end multitable


@node  Diode Equations, Bipolar Junction Transistors (BJTs), Diode Model (D), Transistors and Diodes
@subsection  Diode Equations

The junction diode is the the basic semiconductor device and the simplest
one modeled in NGSPICE, but it's model is quite complex, even if not
all the physical phenomena affecting a pn junction are modelled. The diode
is modeled in three different regions:
 
@itemize @bullet
     @item
     Forward bias: the anode is more positive than the cathode, the 
     diode is "on" and can conduct large currents. To avoid convergence
     problems and unrealistic high current, it is better to specify a 
     series resistance to limit current with @option{RS} model parameter.
     @item
     Reverse bias: the cathode is more positive than the anode and
     the diode is "off". A reverse bias diode conducts a small leakage
     current.
     @item
     Breakdown: the breakdown region is modelled only if the @option{BV}
     model parameter is given. When a diode enters breakdown the current
     increase exponentially (remember to limit it). @option{BV} is a 
     positive value. 
@end itemize


@sc{Parameters Scaling}

Model parameters are scaled using the unitless parameters @option{AREA}
and @option{PJ} and the multiplier @option{M} as depicted below:

@tex
$$AREA_{eff} = {\rm AREA}\cdot{\rm M} $$
$$PJ_{eff} = {\rm PJ}\cdot{\rm M} $$
$$IS_{eff} = {\rm IS} \cdot AREA_{eff} + {\rm JSW} * PJ_{eff} $$
$$IBV_{eff} = {\rm IBV}\cdot AREA_{eff}$$
$$IK_{eff} = {\rm IK}\cdot AREA_{eff} $$ 
$$IKR_{eff} = {\rm IKR}\cdot AREA_{eff} $$
$$CJ_{eff} = {\rm CJ0}\cdot AREA_{eff} $$
$$CJP_{eff} = {\rm CJP}\cdot PJ_{eff} $$
@end tex
@ifnottex
@example
               AREAeff = AREA * M
	       PJeff = PJ * M
               ISeff = IS * AREAeff + JSW * PJeff
               IKeff = IK * AREAeff
               IKReff = IKR * AREAeff
	       CJeff = CJ0 * AREAeff
	       CJPeff = CJP * PJeff
@end example
@end ifnottex

@sc{Diode DC, Transient and AC model equations}

@tex
$$
I_D= \cases{IS_{eff} ( e^{q V_D \over N k T} - 1) + V_D * GMIN, &if $V_D \geq -3{NkT \over q}$\cr
            -IS_{eff} [1 + ({3NkT \over q V_D e })^3] + V_D * GMIN , &if $-BV_{eff}<V_D<-3{NkT \over q}$\cr
	    -IS_{eff} ( e^{-q (BV_{eff} + V_D) \over N k T}) + V_D * GMIN, &if $V_D \leq -BV_{eff}$ \cr}
$$    
@end tex
@ifnottex
@example
            To be written!
@end example
@end ifnottex

The breakdown region must be described with more depth since the breakdown
is not modelled in physically.  As written before, the breakdown modelling
is based on two model parameters: the "nominal breakdown voltage" @option{BV} 
and the current at the onset of breakdown @option{IBV}. For the diode 
model to be consistent, the current value cannot be arbitrary chosen,
since the reverse bias and breakdown regions must match. 

When the diode enters breakdown region from reverse bias, the current 
is calculated using the formula:

@tex
$$
I_{bdwn} = -IS_{eff} ( e^{-q {\rm BV} \over N k T} - 1)           
$$    
@end tex
@ifnottex
@example
            To be written!
@end example
@end ifnottex

@sc{Note:} if you look at the code in @file{diotemp.c} you will discover
that the exponential relation is replaced with a first order taylor 
series expansion.

The computed current is necessary to adjust the breakdown voltage
making the two regions match. The algorithm is a little bit convoluted
and only a brief description is given here:

@tex
if $IBV_{eff} < I_{bdwn}$ then 
$$ IBV_{eff} = I_{bdwn} $$ 
$$BV_{eff} = {\rm BV} $$
else
$$BV_{eff} = {\rm BV} - {\rm N} V_t \ln({ IBV_{eff} \over I_{bdwn}}) $$
@end tex
@ifnottex
@example

IF IBVeff < Ibdwm THEN
   IBVeff = Ibwn
   BVeff = BV
ELSE
   BVeff = BV - N * Vt * LN(IBVeff/Ibdvn)
END IF   
@end example
@end ifnottex

Most real diodes shows a current increase that, at high current levels,
does not follow the exponential relationship given above. This behaviour
is due to high level of carriers injected into the junction. High
injection effects (as they are called) are modelled with @option{IK} and
@option{IKR}. 

@tex
$$
I_{Deff} = \cases{ {{I_D} \over {1 + \sqrt{I_D \over IK_{eff} }}}, &if $V_D \geq -3{NkT \over q}$\cr
                   {{I_D} \over {1 + \sqrt{I_D \over IKR_{eff} }}}, &otherwise.\cr}
$$
@end tex
@ifnottex
@example

            Not yet written!

@end example
@end ifnottex

Diode capacitance is divided into two different terms: 

@itemize @bullet
@item Depletion capacitance
@item Diffusion capacitance
@end itemize

Depletion capacitance is composed by two different contributes, one
associated to the bottom of the junction (bottowall depletion capacitance)
and the other to the periphery (sidewall depletion capacitance).

The basic equations are:

@tex
$$
C_{Diode} = C_{diffusion} + C_{depletion}
$$
@end tex
@ifnottex
@example

       Cdiode = Cdiffusion + Cdepletion       

@end example
@end ifnottex

Where the depletion capacitance i defined as:

@tex
$$
C_{depletion} = C_{depl_{bw}} + C_{depl_{sw}}
$$
@end tex
@ifnottex
@example

       Cdepletion = CdeplBW + CdeplSW       

@end example
@end ifnottex



The diffusion capacitance, due to the injected minority carriers is
modeled with the transit time @option{TT}:

@tex
$$
C_{diffusion} = {\rm TT}{{\partial I_{Deff}} \over {\partial V_{D}}}
$$
@end tex
@ifnottex
@example

                      dIDeff
         Cdiffusion = ----- * TT
                       dVd
@end example
@end ifnottex

The depletion capacitance is more complex to model, since the function
used to approximate it diverges when the diode voltage become greater 
than the junction built-in potential. To avoid function divergence, the 
capacitance function is approximated with a linear extrapolation for
applied voltage greater than a fraction of the junction built-in potential.

@tex
$$
C_{depl_{bw}} = \cases{  CJ_{eff}\cdot(1-{V_D \over {\rm VJ}})^{-{\rm MJ}}, &if $V_D < {\rm FC}\cdot{\rm VJ}$\cr
                  CJ_{eff}\cdot{{1 - {\rm FC}\cdot(1 + {\rm MJ}I) + {\rm MJ}\cdot{V_D \over {\rm VJ}}}\over{(1-{\rm FC})^{(1 +{\rm MJ})}}} , &otherwise.\cr}
$$
$$
C_{depl_{sw}} = \cases{  CJP_{eff}\cdot(1-{V_D \over {\rm PHP}})^{-{\rm MJSW}}, &if $V_D < {\rm FCS}\cdot{\rm PHP}$\cr
                  CJP_{eff}\cdot{{1 - {\rm FCS}\cdot(1 + {\rm MJSW}) + {\rm MJSW}\cdot{V_D \over {\rm PHP}}}\over{(1-{\rm FCS})^{(1 +{\rm MJSW})}}} , &otherwise.\cr}
$$
@end tex
@ifnottex
@example

            Not yet written!

@end example
@end ifnottex

The temperature affects many of the parameters in the equations above,
the following equations show how. One of the most significant parameter
that varies with the temperature for a semiconductor is the band-gap
energy:

@tex
$$
EG_{nom} =  1.16 - 7.02e^{-4}\cdot{{\rm TNOM}^2 \over {{\rm TNOM} + 1108.0}}
$$
$$
EG(T) =  1.16 - 7.02e^{-4}\cdot{T^2 \over {{\rm TNOM} + 1108.0}}
$$
@end tex
@ifnottex
@example                     
                                           2
				       TNOM
        EGnom = 1.16 - 7.02e-4 * ---------------
                                  TNOM + 1108.0
				  
	                                 2
	                                T
	EG(T) = 1.16 - 7.02e-4 * ---------------
			          TNOM + 1108.0
				  
@end example
@end ifnottex

The leakeage currents temperature dependence is:

@tex
$$
IS(T) =  {\rm IS}\cdot e^{logfactor \over {\rm N}}
$$
$$
JSW(T) =  {\rm JSW}\cdot e^{logfactor \over {\rm N}}
$$
@end tex
@ifnottex
@example                     
                              logfactor
			      ---------
                                  N
              IS(T)  =  IS * e  
	 
	                      logfactor
	                      ---------
	                          N
	      JSW(T) = JSW * e

@end example
@end ifnottex

where "logfactor" is defined:

@tex
$$
logfactor =  {{\rm EG} \over {V_t( {\rm TNOM})} } - {{\rm EG} \over {V_t(T)}} + {\rm XTI}\cdot\ln({T \over {\rm TNOM}})
$$
@end tex
@ifnottex
@example                     
                       EG        EG                T
        logfactor = -------- - ----- + XTI * ln ( ---- )
                    Vt(TNOM)   Vt(t)              TNOM
@end example
@end ifnottex

The contact potentials (bottowall an sidewall) temperature dependence is:

@tex
$$
 VJ(T) = {\rm VJ} \cdot ({T \over {\rm TNOM}}) - V_t(T) \cdot \lbrack 3 \cdot \ln({T \over {\rm TNOM}}) 
         + {{\rm EG_{nom}} \over V_t({\rm TNOM})} - {{\rm EG(T)} \over V_t(T)}\rbrack
$$
$$
 PHP(T) = {\rm PHP} \cdot ({T \over {\rm TNOM}}) - V_t(T) \cdot \lbrack 3 \cdot \ln({T \over {\rm TNOM}}) 
         + {{\rm EG_{nom}} \over V_t({\rm TNOM})} - {{\rm EG(T)} \over V_t(T)}\rbrack
$$
@end tex
@ifnottex
@example      
                       T                            T        EGnom     EG(T)
      VJ(T) = VJ * ( ----- ) - Vt(T) * [ 3 * ln ( ----- ) + -------- - ----- ] 
                     TNOM                         TNOM      Vt(TNOM)   Vt(T)


                         T                            T        EGnom     EG(T)
      PHP(T) = PHP * ( ----- ) - Vt(T) * [ 3 * ln ( ----- ) + -------- - ----- ] 
                       TNOM                         TNOM      Vt(TNOM)   Vt(T)
@end example
@end ifnottex

The depletion capacitances temperature dependence is:

@tex
$$
 CJ(T) = {\rm CJ} \cdot \lbrack 1 + {\rm MJ} \cdot (4.0e^{-4}\cdot (T - {\rm TNOM})
         - {VJ(T) \over {\rm VJ}} + 1) \rbrack
$$
$$
 CJSW(T) = {\rm CJSW} \cdot \lbrack 1 + {\rm MJSW} \cdot (4.0e^{-4}\cdot (T - {\rm TNOM})
          - {PHP(T) \over {\rm PHP}} + 1) \rbrack 
$$
@end tex
@ifnottex
@example      
                                                    PB(T)
      CJ(T) = CJ * [1 + MJ * (4.0e-4 * (T - TMON) - ----- + 1) ] 
                                                      PB

                                                        PHP(T)
      CJSW(T) = CJSW * [1 + MJ * (4.0e-4 * (T - TMON) - ------ + 1) ] 
                                                         PHP
@end example
@end ifnottex

The transit time temperature dependence is:

@tex
$$
TT(T) = {\rm TT}\cdot(1 + {\rm TTT1}\cdot(T - {\rm TNOM}) +  {\rm TTT2}\cdot(T - {\rm TNOM})^2)
$$
@end tex
@ifnottex
@example      
      TT(T) = TT * (1 + TTT1 * (T - TNOM) + TTT2) * (T -TNOM)^2)   
@end example
@end ifnottex

The junction grading coefficient temperature dependence is:

@tex
$$
MJ(T) = {\rm MJ}\cdot(1 + {\rm TM1}\cdot(T - {\rm TNOM}) +  {\rm TM2}\cdot(T - {\rm TNOM})^2)
$$
@end tex
@ifnottex
@example      
      MJ(T) = MJ * (1 + TM1 * (T - TNOM) + TM2) * (T -TNOM)^2)   
@end example
@end ifnottex

The series resistance temperature dependence is:

@tex
$$
RS(T) = {\rm RS}\cdot(1 + {\rm TRS}\cdot(T - {\rm TNOM}) +  {\rm TRS2}\cdot(T - {\rm TNOM})^2)
$$
@end tex
@ifnottex
@example      
      RS(T) = RS * (1 + TRS * (T - TNOM) + TRS2) * (T -TNOM)^2)   
@end example
@end ifnottex

@node  Bipolar Junction Transistors (BJTs), BJT Models (NPN/PNP), Diode Equations, Transistors and Diodes
@subsection  Bipolar Junction Transistors (BJTs)

 General form:

@example
  QXXXXXXX nc nb ne <ns> mname <area=val> <areac=val> <areab=val> 
  + <m=val> <off> <ic=vbe, vce> <temp=val> <dtemp=val>
@end example


 Examples:

@example
  Q23 10 24 13 QMOD IC=0.6, 5.0
  Q50A 11 26 4 20 MOD1
@end example



@option{nc}, @option{nb}, and @option{ne} are the collector, base, and 
emitter nodes, respectively. @option{ns} is the (optional) substrate 
node.If unspecified, ground is used.  @option{mname} is the model name,  
@option{area}, @option{areab}, @option{areac} are the area factors, and
@option{off} indicates an (optional) initial condition on the device 
for the dc analysis.  If the area factor is omitted, a value of 1.0 is 
assumed.  The (optional) initial condition specification using  
@option{ic=vbe, vce} is intended for use with the  @option{uic}
@command{.tran} control line, when a transient analysis is desired 
starting from other than the quiescent operating point.  See the 
@command{.ic} control line description for a better way to set 
transient initial conditions.  The (optional) @option{temp} value is 
the temperature at which this device is to operate, and overrides the 
temperature specification on the @command{.option} control line. Using 
@option{dtemp} option you can specify instance's temperature relative 
to the circuit temperature.




@node  BJT Models (NPN/PNP), Junction Field-Effect Transistors (JFETs), Bipolar Junction Transistors (BJTs), Transistors and Diodes
@subsection  BJT Models (NPN/PNP)

NGSPICE provides two BJT device models. The @option{level} specifies the 
model to be used:

@itemize @bullet
@item level=1 : This is the original spice BJT model, and it is the 
                default model if the @option{level} keyword is not
		specified on the @command{.model} line.
@item level=2 : This is a modified version of the original spice 
                BJT that models both vertical and lateral devices and
		includes temperature corrections of collector,
		emitter and base resistors.
@end itemize		 
				
The bipolar junction transistor model in NGSPICE is an adaptation of the
integral charge control model of Gummel and Poon.  This modified
Gummel-Poon model extends the original model to include several effects
at high bias levels.  The model automatically simplifies to the simpler
Ebers-Moll model when certain parameters are not specified.  The
parameter names used in the modified Gummel-Poon model have been chosen
to be more easily understood by the program user, and to reflect better
both physical and circuit design thinking.


The dc model is defined by the parameters @option{IS}, @option{BF}, 
@option{NF}, @option{ISE}, @option{IKF}, amd @option{NE} which determine 
the forward current gain characteristics, @option{IS}, @option{BR}, 
@option{NR}, @option{ISC}, @option{IKR}, and @option{NC} which determine 
the reverse current gain characteristics, and @option{VAF} and @option{VAR} 
which determine the output conductance for forward and reverse regions.  
Level 2 model includes substrate saturation current @option{ISS}.

Three ohmic resistances @option{RB}, @option{RC}, and @option{RE}
are included, where @option{RB} can be high current dependent.  Base charge
storage is modelled by forward and reverse transit times, @option{TF} and 
@option{TR}, the forward transit time @option{TF} being bias dependent if 
desired, and nonlinear depletion layer capacitances which are determined by 
@option{CJE}, @option{VJE}, and @option{NJE} for the B-E junction, @option{CJC},
@option{VJC}, and @option{NJC} for the B-C junction and @option{CJS},
@option{VJS}, and @option{MJS} for the C-S (Collector-Substrate) junction.
Level 2 model defines a substrate capacitance that will be connected to 
device's base or collector, to model lateral or vertical devices.

The temperature dependence of the saturation currents, @option{IS} and  
@option{ISS} (for level 2 model), is determined by the energy-gap, 
@option{EG}, and the saturation current temperature exponent, @option{XTI}.  
Additionally base current temperature dependence is modelled by the beta 
temperature exponent @option{XTB} in the new model.  The values specified 
are assumed to have been measured at the temperature @option{TNOM}, which 
can be specified on the @command{.options} control line or overridden by 
a specification on the @command{.model} line.

The BJT parameters used in the modified Gummel-Poon model are listed
below.  The parameter names used in earlier versions of SPICE2 are still
accepted.

Modified Gummel-Poon BJT Parameters:

@multitable @columnfractions .1 .40 .10 .15 .15 .1
@item name   @tab parameter @tab units @tab default @tab example @tab scale factor
@item SUBS   @tab substrate connection: 1 for 
                  vertical geometry, -1 for
		  lateral geometry.            
		  (level 2 only)               @tab 1 @tab  
                                               @tab 1.0e-15 @tab 
@item IS     @tab transport saturation current @tab A @tab 1.0e-16 
                                               @tab 1.0e-15 @tab area
@item ISS    @tab reverse saturation current, 
             substrate-to-collector for 
	     vertical device or 
	     substrate-to-base for lateral
	     (level 2 only)                    @tab A @tab 1.0e-16
	                                       @tab 1.0e-15 @tab area 
		  
@item BF     @tab ideal maximum forward beta   @tab - @tab 100 @tab 100
@item NF     @tab forward current emission 
                  coefficient                  @tab - @tab 1.0 @tab 1
@item VAF    @tab forward Early voltage        @tab V @tab infinite @tab 200
@item IKF    @tab corner for forward beta 
                  current roll-off             @tab A @tab infinite 
		                               @tab 0.01 @tab area
@item ISE    @tab B-E leakage saturation current @tab A @tab 0 @tab 1.0e-13 
             @tab area
@item NE     @tab B-E leakage emission coefficient @tab - @tab 1.5 @tab 2
@item BR     @tab ideal maximum reverse beta @tab - @tab 1 @tab 0.1
@item NR     @tab reverse current emission coefficient @tab - @tab 1
             @tab 1
@item VAR    @tab reverse Early voltage @tab V @tab infinite @tab 200
@item IKR    @tab corner for reverse beta high current roll-off
             @tab A @tab infinite @tab 0.01 @tab area
@item ISC    @tab B-C leakage saturation current
                  (area is "areab" for vertical
		   devices and "areac" for lateral) @tab A @tab 0 
             @tab 1.0e-13  @tab  area

@item NC     @tab B-C leakage emission coefficient @tab - @tab 2 @tab 1.5
@item RB     @tab zero bias base resistance @tab Z @tab 0 @tab 100 @tab area
@item IRB    @tab current where base 
                  resistance falls halfway 
		  to its min value @tab A @tab infinite @tab 0.1 @tab area
@item RBM    @tab minimum base resistance at high currents @tab Z 
                                                @tab RB 10 @tab area
@item RE     @tab emitter resistance @tab Z @tab 0 @tab 1 @tab area
@item RC     @tab collector resistance @tab Z @tab 0 @tab 10 @tab area
@item CJE    @tab B-E zero-bias depletion capacitance @tab F @tab 0 
                                                @tab 2pF @tab area
@item VJE    @tab B-E built-in potential @tab V @tab 0.75 @tab 0.6
@item MJE    @tab B-E junction exponential factor @tab - @tab 0.33 @tab 0.33
@item TF     @tab ideal forward transit time @tab sec @tab 0 @tab 0.1ns
@item XTF    @tab coefficient for bias dependence of TF @tab - @tab 0
@item VTF    @tab voltage describing VBC dependence of TF @tab V @tab infinite
@item ITF    @tab high-current parameter for effect on TF @tab A 
                                               @tab 0 @tab - @tab area
@item PTF    @tab excess phase at freq=1.0/(TF*2PI) Hz @tab deg @tab 0
@item CJC    @tab B-C zero-bias depletion capacitance 
                  (area is "areab" for vertical
		   devices and "areac" for lateral) @tab F @tab 0 
                                               @tab 2pF @tab area
@item VJC    @tab B-C built-in potential @tab V @tab 0.75 @tab 0.5
@item MJC    @tab B-C junction exponential factor @tab - @tab 0.33 @tab 0.5
@item XCJC   @tab fraction of B-C depletion capacitance connected to
internal base node @tab - @tab 1
@item TR     @tab ideal reverse transit time @tab sec @tab 0 @tab 10ns
@item CJS    @tab zero-bias collector-substrate capacitance 
                  (area is "areac" for vertical devices and
		   "areab" for lateral)     @tab F @tab 0
                                            @tab 2pF @tab area
@item VJS    @tab substrate junction built-in potential @tab V @tab 0.75
@item MJS    @tab substrate junction exponential factor @tab - @tab 0 @tab 0.5
@item XTB    @tab forward and reverse beta temperature exponent @tab - @tab 
0
@item EG     @tab energy gap for temperature effect on IS @tab eV @tab 1.11
@item XTI    @tab temperature exponent for effect on IS @tab - @tab 3
@item KF     @tab flicker-noise coefficient @tab - @tab 0
@item AF     @tab flicker-noise exponent @tab - @tab 1
@item FC     @tab coefficient for forward-bias depletion capacitance formula
             @tab - @tab 0.5 @tab o
@item TNOM   @tab Parameter measurement temperature @tab @math{^o}C @tab 27 @tab 50
@item TRE1   @tab 1st order temperature coefficient for RE
                  (level 2 only) @tab 1/@math{^o}C @tab 0.0 @tab 1e-3
@item TRE2   @tab 2nd order temperature coefficient for RE 
                  (level 2 only) @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab 1e-5
@item TRC1   @tab 1st order temperature coefficient for RC 
                  (level 2 only )@tab 1/@math{^o}C @tab 0.0 @tab 1e-3
@item TRC2   @tab 2nd order temperature coefficient for RC 
                  (level 2 only) @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab 1e-5
@item TRB1   @tab 1st order temperature coefficient for RB 
                  (level 2 only) @tab 1/@math{^o}C @tab 0.0 @tab 1e-3
@item TRB2   @tab 2nd order temperature coefficient for RB
                  (level 2 only) @tab 1/@math{^o}C@math{^2} @tab 0.0 @tab 1e-5
@item TRB1   @tab 1st order temperature coefficient for RBM 
                  (level 2 only) @tab 1/@math{^o}C @tab TRB1 @tab 1e-3
@item TRB2   @tab 2nd order temperature coefficient for RBM 
                  (level 2 only) @tab 1/@math{^o}C@math{^2} @tab TRB2 @tab 1e-5
@end multitable




@node  Junction Field-Effect Transistors (JFETs), JFET Models (NJF/PJF), BJT Models (NPN/PNP), Transistors and Diodes
@subsection  Junction Field-Effect Transistors (JFETs)

 General form:

@example
  JXXXXXXX ND NG NS MNAME <AREA> <OFF> <IC=VDS, VGS> <TEMP=T>
@end example


 Examples:

@example
  J1 7 2 3 JM1 OFF
@end example



ND, NG, and NS are the drain, gate, and source nodes, respectively.
MNAME is the model name, AREA is the area factor, and OFF indicates an
(optional) initial condition on the device for dc analysis.  If the area
factor is omitted, a value of 1.0 is assumed.  The (optional) initial
condition specification, using IC=VDS, VGS is intended for use with the
UIC option on the .TRAN control line, when a transient analysis is
desired starting from other than the quiescent operating point.  See the
.IC control line for a better way to set initial conditions.  The
(optional) TEMP value is the temperature at which this device is to
operate, and overrides the temperature specification on the .OPTION
control line.




@node  JFET Models (NJF/PJF), MOSFETs, Junction Field-Effect Transistors (JFETs), Transistors and Diodes
@subsection  JFET Models (NJF/PJF)


The JFET model is derived from the FET model of Shichman and Hodges.
The dc characteristics are defined by the parameters VTO and BETA, which
determine the variation of drain current with gate voltage, LAMBDA,
which determines the output conductance, and IS, the saturation current
of the two gate junctions.  Two ohmic resistances, RD and RS, are
included.  Charge storage is modelled by nonlinear depletion layer
capacitances for both gate junctions which vary as the -1/2 power of
junction voltage and are defined by the parameters CGS, CGD, and PB.

Note that in Spice3f and later, a fitting parameter B has been added.
For details, see [9].

@multitable @columnfractions .1 .45 .15 .15 .15 .1
@item name @tab parameter @tab units @tab default @tab example @tab area
@item VTO @tab threshold voltage (@math{V_T0}) @tab V @tab -2.0 @tab -2.0
@item BETA @tab transconductance parameter (B)
        @tab A/V@math{^2} @tab 1.0e-4 @tab 1.0e-3 @tab *
@item LAMBDA @tab channel-length modulation parameter (L)
        @tab 1/V @tab 0 @tab 1.0e-4
@item RD @tab drain ohmic resistance @tab Z @tab 0 @tab 100 @tab *
@item RS @tab source ohmic resistance @tab Z @tab 0 @tab 100 @tab *
@item CGS @tab zero-bias G-S junction capacitance (@math{C_gs})
        @tab F @tab 0 @tab 5pF @tab *
@item CGD @tab zero-bias G-D junction capacitance (@math{C_gs})
        @tab F @tab 0 @tab 1pF @tab *
@item PB @tab gate junction potential @tab V @tab 1 @tab 0.6
@item IS @tab gate junction saturation current (@math{I_S})
        @tab A @tab 1.0e-14 @tab 1.0e-14 @tab *
@item B @tab doping tail parameter @tab - @tab 1 @tab 1.1
@item KF @tab flicker noise coefficient @tab - @tab 0
@item AF @tab flicker noise exponent @tab - @tab 1
@item FC @tab coefficient for forward-bias depletion capacitance formula
        @tab - @tab 0.5
@item TNOM @tab parameter measurement temperature
        @tab @math{^o}C @tab 27 @tab 50
@end multitable



@node  MOSFETs, MOSFET Models (NMOS/PMOS), JFET Models (NJF/PJF), Transistors and Diodes
@subsection  MOSFETs

 General form:

@example
  MXXXXXXX ND NG NS NB MNAME <M=VAL> <L=VAL> <W=VAL> <AD=VAL> <AS=VAL>
  + <PD=VAL> <PS=VAL> <NRD=VAL> <NRS=VAL> <OFF>
  + <IC=VDS, VGS, VBS> <TEMP=T>
@end example


 Examples:

@example
  M1 24 2 0 20 TYPE1
  M31 2 17 6 10 MODM L=5U W=2U
  M1 2 9 3 0 MOD1 L=10U W=5U AD=100P AS=100P PD=40U PS=40U
@end example


ND, NG, NS, and NB are the drain, gate, source, and bulk (substrate)
nodes, respectively.  MNAME is the model name. M is the multiplicity
parameter, which simulates m paralleled devices. All MOS models 
support the "M" parameter. L and W are the channel length and width, 
in meters.  AD and AS are the areas of the drain and source diffusions, 
in meters@math{^2}.  

Note that the suffix U specifies microns (1e-6 m) and P sq-microns 
(1e-12 m@math{^2}). If any of L, W, AD, or AS are not specified, 
default values are used.  The use of defaults simplifies input file 
preparation, as well as the editing required if device geometries are 
to be changed.  PD and PS are the perimeters of the drain and source 
junctions, in meters.  NRD and NRS designate the equivalent number of 
squares of the drain and source diffusions; these values multiply the 
sheet resistance RSH specified on the .MODEL control line for an 
accurate representation of the parasitic series drain and source 
resistance of each transistor.  PD and PS default to 0.0 while NRD 
and NRS to 1.0.  OFF indicates an (optional) initial condition on the 
device for dc analysis.  The (optional) initial condition specification 
using IC=VDS, VGS, VBS is intended for use with the UIC option on the 
.TRAN control line, when a transient analysis is desired starting from 
other than the quiescent operating point.  See the .IC control line for 
a better and more convenient way to specify transient initial conditions.  
The (optional) TEMP value is the temperature at which this device is to 
operate, and overrides the temperature specification on the .OPTION 
control line.  The temperature specification is ONLY valid for level 1, 
2, 3, and 6 MOSFETs, not for level 4 or 5 (BSIM) devices.




@node  MOSFET Models (NMOS/PMOS), MESFETs, MOSFETs, Transistors and Diodes
@subsection  MOSFET Models (NMOS/PMOS)

MOSFET models are the central part of NGSPICE, probably because they are 
the most widely used devices in the electronics world. NGSPICE provides
all the MOSFETs implemented in the original Spice3f and adds several models
developed by Berkeley's Device Group and other independent groups. Not all
models below are included in the standard NGSPICE distribution because of
copyright restrictions.  

NGSPICE provides four MOSFET device models, which differ in the
formulation of the I-V characteristic.  The variable LEVEL specifies the
model to be used:

@multitable @columnfractions .10 .33 .50
@item LEVEL @tab Model           @tab Notes
@item  1    @tab Shichman-Hodges @tab The classical model
@item  2    @tab MOS2            @tab Described in [2]
@item  3    @tab MOS3            @tab A semi-empirical model (see [1])
@item  4    @tab BSIM            @tab Described in [3]
@item  5    @tab BSIM2           @tab Described in [5]
@item  6    @tab MOS6            @tab Described in [2]
@item  8    @tab BSIM3           @tab Described in [13]
@item  9    @tab MOS9            @tab n/a 
@item 10    @tab B3SOI           @tab n/a
@item 14    @tab BSIM4           @tab n/a
@item 17    @tab HiSIM1          @tab n/a
@item 29    @tab B3SOIPD         @tab n/a
@item 30    @tab B3SOIFD         @tab n/a
@item 31    @tab B3SOIDD         @tab n/a
@item 14    @tab BSIM4           @tab n/a
@item 44    @tab EKV             @tab n/a
@item 49    @tab BSIM3v1s        @tab n/a (Serban Version)
@item 50    @tab BSIM3v1         @tab n/a (Berkeley Version)
@item 51    @tab BSIM3v1a        @tab n/a (Alan Version)
@item 52    @tab BSIM3v0         @tab n/a (Berkeley Version)
@item 62    @tab STAG            @tab n/a
@end multitable

Level 44 model (EKV) is not available in the standard distribution since
it is not released in source form. To obtain the code please refer to 
the @uref{http://legwww.epfl.ch/ekv/, EKV group home page}. 

The dc characteristics of the level 1 through level 3 MOSFETs are
defined by the device parameters VTO, KP, LAMBDA, PHI and GAMMA.  These
parameters are computed by NGSPICE if process parameters (NSUB, TOX, ...)
are given, but users specified values always override.  VTO is positive
(negative) for enhancement mode and negative (positive) for depletion
mode N-channel (P-channel) devices.  Charge storage is modelled by three
constant capacitors, CGSO, CGDO, and CGBO which represent overlap
capacitances, by the nonlinear thin-oxide capacitance which is
distributed among the gate, source, drain, and bulk regions, and by the
nonlinear depletion-layer capacitances for both substrate junctions
divided into bottom and periphery, which vary as the MJ and MJSW power
of junction voltage respectively, and are determined by the parameters
CBD, CBS, CJ, CJSW, MJ, MJSW and PB.  Charge storage effects are modelled
by the piecewise linear voltages-dependent capacitance model proposed by
Meyer.  The thin-oxide charge-storage effects are treated slightly
different for the LEVEL=1 model.  These voltage-dependent capacitances
are included only if TOX is specified in the input description and they
are represented using Meyer's formulation.

There is some overlap among the parameters describing the junctions,
e.g. the reverse current can be input either as IS (in A) or as JS (in
A/m@math{^2}). Whereas the first is an absolute value the second is
multiplied by AD and AS to give the reverse current of the drain and
source junctions respectively.  This methodology has been chosen since
there is no sense in relating always junction characteristics with AD
and AS entered on the device line; the areas can be defaulted.  The same
idea applies also to the zero-bias junction capacitances CBD and CBS (in
F) on one hand, and CJ (in F/m@math{^2}) on the other.  The parasitic
drain and source series resistance can be expressed as either RD and RS
(in ohms) or RSH (in ohms/sq.), the latter being multiplied by the
number of squares NRD and NRS input on the device line.

A discontinuity in the MOS level 3 model with respect to the KAPPA
parameter has been detected (see [10]).  The supplied fix has been
implemented in Spice3f2 and later.  Since this fix may affect parameter
fitting, the option "BADMOS3" may be set to use the old implementation
(see the section on simulation variables and the ".OPTIONS" line).
NGSPICE level 1, 2, 3 and 6 parameters:

@multitable @columnfractions .1 .45 .15 .15 .15
@item name  @tab parameter
                        @tab units @tab default @tab example
@item LEVEL @tab model index
                        @tab -     @tab 1
@item VTO   @tab zero-bias threshold voltage (@math{V_T0})
                        @tab V @tab 0.0 @tab 1.0
@item KP    @tab transconductance parameter
                        @tab @math{A/V^2} @tab 2.0e-5 @tab 3.1e-5
@item GAMMA @tab bulk threshold parameter
                        @tab @math{V^1/2} @tab 0.0 @tab 0.37
@item PHI   @tab surface potential (U)
                        @tab V @tab 0.6 @tab 0.65
@item LAMBDA @tab channel-length modulation (MOS1 and MOS2 only) (L)
                        @tab 1/V @tab 0.0 @tab 0.02
@item RD    @tab drain ohmic resistance
                        @tab Z @tab 0.0 @tab 1.0
@item RS    @tab source ohmic resistance
                        @tab Z @tab 0.0 @tab 1.0
@item CBD   @tab zero-bias B-D junction capacitance
                        @tab F @tab 0.0 @tab 20fF
@item CBS   @tab zero-bias B-S junction capacitance
                        @tab F @tab 0.0 @tab 20fF
@item IS    @tab bulk junction saturation current (@math{I_S})
                        @tab A @tab 1.0e-14 @tab 1.0e-15
@item PB    @tab bulk junction potential
                        @tab V @tab 0.8 @tab 0.87
@item CGSO  @tab gate-source overlap capacitance per meter channel width
                        @tab F/m @tab 0.0 @tab 4.0e-11
@item CGDO  @tab gate-drain overlap capacitance per meter channel width
                        @tab F/m @tab 0.0 @tab 4.0e-11
@item CGBO  @tab gate-bulk overlap capacitance per meter channel length
                        @tab F/m @tab 0.0 @tab 2.0e-10
@item RSH   @tab drain and source diffusion sheet resistance
                        @tab Z/[] @tab 0.0 @tab 10.0
@item CJ    @tab zero-bias bulk junction bottom cap. per sq-meter of junction area
                        @tab @math{F/m^2} @tab 0.0 @tab 2.0e-4
@item MJ    @tab bulk junction bottom grading coeff.
                        @tab - @tab 0.5 @tab 0.5
@item CJSW  @tab zero-bias bulk junction sidewall cap. per meter of junction perimeter
                        @tab F/m @tab 0.0 @tab 1.0e-9
@item MJSW  @tab bulk junction sidewall grading coeff.
                        @tab - @tab 0.50(level1), 0.33(level2, 3)
@item JS    @tab bulk junction saturation current per sq-meter of junction area
                        @tab @math{A/m^2} @tab 1.0e-8
@item TOX   @tab oxide thickness
                        @tab meter @tab 1.0e-7 @tab 1.0e-7
@item NSUB  @tab substrate doping
                        @tab @math{1/cm^3} @tab 0.0 @tab 4.0e15
@item NSS   @tab surface state density
                        @tab @math{1/cm^2} @tab 0.0 @tab 1.0e10
@item NFS   @tab fast surface state density
                        @tab @math{1/cm^2} @tab 0.0 @tab 1.0e10
@item TPG   @tab type of gate material:
                +1 opp. to substrate, -1 same as substrate, 0  Al gate
                        @tab - @tab 1.0
@item XJ    @tab metallurgical junction depth
                        @tab meter @tab 0.0 @tab 1M
@item LD    @tab lateral diffusion
                        @tab meter @tab 0.0 @tab 0.8M
@item UO    @tab surface mobility
                        @tab @math{cm^2/Vs} @tab 600 @tab 700
@item UCRIT @tab critical field for mobility degradation (MOS2 only)
                        @tab V/cm @tab 1.0e4 @tab 1.0e4
@item UEXP  @tab critical field exponent in mobility degradation (MOS2 only)
                        @tab - @tab 0.0 @tab 0.1
@item UTRA  @tab transverse field coeff. (mobility) (deleted for MOS2)
                        @tab - @tab 0.0 @tab 0.3
@item VMAX  @tab maximum drift velocity of carriers
                        @tab m/s @tab 0.0 @tab 5.0e4
@item NEFF  @tab total channel-charge (fixed and mobile) coefficient (MOS2 only)
                        @tab - @tab 1.0 @tab 5.0
@item KF    @tab flicker noise coefficient
                        @tab - @tab 0.0 @tab 1.0e-26
@item AF    @tab flicker noise exponent
                        @tab - @tab 1.0 @tab 1.2
@item FC    @tab coefficient for forward-bias depletion capacitance formula
                        @tab - @tab 0.5
@item DELTA @tab width effect on threshold voltage (MOS2 and MOS3)
                        @tab - @tab 0.0 @tab 1.0
@item THETA @tab mobility modulation (MOS3 only)
                        @tab 1/V @tab 0.0 @tab 0.1
@item ETA   @tab static feedback (MOS3 only)
                        @tab - @tab 0.0 @tab 1.0
@item KAPPA @tab saturation field factor (MOS3 only)
                        @tab - @tab 0.2 @tab 0.5
@item TNOM  @tab parameter measurement temperature
                        @tab @math{^o}C @tab 27 @tab 50
@end multitable


The level 3 model available into ngspice takes into account 
length and width mask adjustments (@code{xl} and @code{xw})
and device width narrowing due to diffusion (@code{wd}).  


The level 4 and level 5 (BSIM1 and BSIM2) parameters are all values
obtained from process characterization, and can be generated
automatically.  J. Pierret [4] describes a means of generating a
'process' file, and the program Proc2Mod provided with NGSPICE converts
this file into a sequence of BSIM1 ".MODEL" lines suitable for inclusion
in a NGSPICE input file.  Parameters marked below with an * in the l/w
column also have corresponding parameters with a length and width
dependency.  For example, VFB is the basic parameter with units of
Volts, and LVFB and WVFB also exist and have units of Volt-Mmeter The
formula


@tex
$$
    P = P_0 + { P_L \over L_{\rm effective} } + { P_W \over W_{\rm effective} }
$$
@end tex
@ifnottex
@example
                      P            P
                       L            W
         P = P  + ---------- + ----------
              0
                  L            W
                   effective    effective
@end example
@end ifnottex

is used to evaluate the parameter for the actual device specified with

@tex
$$
    L_{\rm effective} = L_{\rm input} - DL
$$
@end tex
@ifnottex
@example
             L          = L      - DL
              effective    input
@end example
@end ifnottex

 and

@tex
$$
    W_{\rm effective} = W_{\rm input} - DW
$$
@end tex
@ifnottex
@example
             W          = W      - DW
              effective    input
@end example
@end ifnottex



Note that unlike the other models in NGSPICE, the BSIM model is designed
for use with a process characterization system that provides all the
parameters, thus there are no defaults for the parameters, and leaving
one out is considered an error.  For an example set of parameters and
the format of a process file, see the SPICE2 implementation notes[3].

For more information on BSIM2, see reference [5].

 NGSPICE BSIM (level 4) parameters.

@multitable @columnfractions .15 .55 .20 .10 
@item name  @tab  parameter                                            @tab units       @tab  l/w
@item VFB   @tab  flat-band voltage                                    @tab   V         @tab   *
@item PHI   @tab  surface inversion potential                          @tab   V         @tab   *
@item K1    @tab  body effect coefficient                              @tab  V@math{^(1/2)}    @tab   *
@item K2    @tab  drain/source depletion charge-sharing coefficient    @tab   -         @tab   *
@item ETA   @tab  zero-bias drain-induced barrier-lowering coefficient @tab   -         @tab   *
@item MUZ   @tab  zero-bias mobility                                   @tab cm@math{^2}/V-s  @tab   
@item DL    @tab  shortening of channel                                @tab   Mm        @tab
@item DW    @tab  narrowing of channel                                 @tab   Mm        @tab
@item U0    @tab  zero-bias transverse-field mobility degradation 
                  coefficient                                          @tab   V@math{^-1}    @tab   *
@item U1    @tab  zero-bias velocity saturation coefficient            @tab   Mm/V      @tab   *
@item X2MZ  @tab  sens. of mobility to substrate bias at V_ds=0        @tab cm@math{^2}/V-s  @tab   *
@item X2E   @tab  sens. of drain-induced barrier lowering effect to 
                  substrate bias                                       @tab   V@math{^-1}    @tab   *
@item X3E   @tab  sens. of drain-induced barrier lowering effect to 
                  drain bias at V_ds=V_dd                              @tab   V@math{^-1}    @tab   *
@item X2U0  @tab  sens. of transverse field mobility degradation 
                  effect to substrate bias                             @tab   V@math{^2}    @tab   *
@item X2U1  @tab  sens. of velocity saturation effect to substrate 
                  bias                                                 @tab  MmV@math{^2}   @tab   *
@item MUS   @tab  mobility at zero substrate bias and at V_ds=V_dd     @tab  cm@math{^2}/V@math{^2}-s @tab  
@item X2MS  @tab  sens. of mobility to substrate bias at V_ds=V_dd     @tab  cm@math{^2}/V@math{^2}-s @tab   *
@item X3MS  @tab  sens. of mobility to drain bias at V_ds=V_dd         @tab  cm@math{^2}/V@math{^2}-s @tab   *
@item X3U1  @tab  sens. of velocity saturation effect on drain bias 
                  at V_ds=V_dd                                         @tab  MmV@math{^2}   @tab   *
@item TOX   @tab  gate oxide thickness                                 @tab  Mm         @tab
@item TEMP  @tab  temperature at which parameters were measured        @tab  C          @tab
@item VDD   @tab  measurement bias range                               @tab  V          @tab   
@item CGDO  @tab  gate-drain overlap capacitance per meter channel 
                  width                                                @tab  F/m        @tab
@item CGSO  @tab  gate-source overlap capacitance per meter channel 
                  width                                                @tab  F/m        @tab
@item CGBO  @tab  gate-bulk overlap capacitance per meter channel 
                  length                                               @tab  F/m        @tab
@item XPART @tab  gate-oxide capacitance-charge model flag             @tab   -         @tab    
@item N0    @tab  zero-bias subthreshold slope coefficient             @tab   -         @tab   *
@item NB    @tab  sens. of subthreshold slope to substrate bias        @tab   -         @tab   *
@item ND    @tab  sens. of subthreshold slope to drain bias            @tab   -         @tab   *
@item RSH   @tab  drain and source diffusion sheet resistance          @tab   Z/[]      @tab
@item JS    @tab  source drain junction current density                @tab   A/m@math{^2}     @tab 
@item PB    @tab  built in potential of source drain junction          @tab   V         @tab 
@item MJ    @tab  Grading coefficient of source drain junction         @tab   -         @tab                  
@item BSW   @tab  built in potential of source, drain junction 
                  sidewall                                             @tab   V         @tab
@item MJSW  @tab  grading coefficient of source drain junction 
                  sidewall                                             @tab   -         @tab
@item CJ    @tab  Source drain junction capacitance per unit area      @tab   F/m@math{^2}     @tab
@item CJSW  @tab  source drain junction sidewall capacitance per 
                  unit length                                          @tab   F/m       @tab 
@item WDF   @tab  source drain junction default width                  @tab   m         @tab 
@item DELL  @tab  Source drain junction length reduction               @tab   m         @tab
@end multitable


XPART = 0 selects a 40/60 drain/source charge partition in saturation,
while XPART=1 selects a 0/100 drain/source charge partition.


ND, NG, and NS are the drain, gate, and source nodes, respectively.
MNAME is the model name, AREA is the area factor, and OFF indicates an
(optional) initial condition on the device for dc analysis.  If the area
factor is omitted, a value of 1.0 is assumed.  The (optional) initial
condition specification, using IC=VDS, VGS is intended for use with the
UIC option on the .TRAN control line, when a transient analysis is
desired starting from other than the quiescent operating point.  See the
.IC control line for a better way to set initial conditions.




@node  MESFETs, MESFET Models (NMF/PMF), MOSFET Models (NMOS/PMOS), Transistors and Diodes
@subsection  MESFETs

 General form:

@example
  ZXXXXXXX ND NG NS MNAME <AREA> <OFF> <IC=VDS, VGS>
@end example


 Examples:

@example
  Z1 7 2 3 ZM1 OFF
@end example






@node  MESFET Models (NMF/PMF),  , MESFETs, Transistors and Diodes
@subsection  MESFET Models (NMF/PMF)


The MESFET model is derived from the GaAs FET model of Statz et al.  as
described in [11].  The dc characteristics are defined by the parameters
VTO, B, and BETA, which determine the variation of drain current with
gate voltage, ALPHA, which determines saturation voltage, and LAMBDA,
which determines the output conductance.  The formula are given by:

@tex
$$
\cases{I_d = {B (V_{gs} - V_T)^2 \over 1 + b(V_{gs} - V_T)}
             \left| 1 - \left| 1 - A {V_{ds} \over 3 } \right|^3 \right|
             (1 + L V_{ds}) & for $0 < V_{ds} < 3/A$ \cr
       I_d = {B (V_{gs} - V_T)^2 \over 1 + b(V_{gs} - V_T)}
             (1 + L V_{ds}) & for $V_{ds} > 3/A$ \cr}
$$
@end tex
@ifnottex
@example
                                   3
                  2
        B (V  -V )    |    |   V  |  |                             3
            gs  T               ds                                 _
 I  = --------------- |1 - |1-A---|  |(1 + L V  )   for  0 < V   <
  d                                           ds              ds
      1 + b(V   - V ) |    |    3 |  |                             A
             gs    T
                    2
          B (V  -V )                                     3
              gs  T                                      _
   I  = ---------------(1 + L V  )            for  V   >
    d                          ds                   ds
        1 + b(V   - V )                                  A
               gs    T
@end example
@end ifnottex

Two ohmic resistances, RD and RS, are included.  Charge storage is
modeled by total gate charge as a function of gate-drain and gate-source
voltages and is defined by the parameters CGS, CGD, and PB.

@multitable {LAMBDA} {channel-length modulation parameter} {units} {default} {example} {area}
@item name   @tab parameter                           @tab units        @tab default @tab example @tab area
@item VTO    @tab pinch-off voltage                   @tab V            @tab -2.0    @tab -2.0
@item BETA   @tab transconductance parameter          @tab A/V@math{^2} @tab 1.0e-4  @tab 1.0e-3  @tab *
@item B      @tab doping tail extending parameter     @tab 1/V          @tab 0.3     @tab 0.3     @tab *
@item ALPHA  @tab saturation voltage parameter        @tab 1/V          @tab 2       @tab 2       @tab *
@item LAMBDA @tab channel-length modulation parameter @tab 1/V          @tab 0       @tab 1.0e-4
@item RD     @tab drain ohmic resistance              @tab Z            @tab 0       @tab 100     @tab *
@item RS     @tab source ohmic resistance             @tab Z            @tab 0       @tab 100     @tab *
@item CGS    @tab zero-bias G-S junction capacitance  @tab F            @tab 0       @tab 5pF     @tab *
@item CGD    @tab zero-bias G-D junction capacitance  @tab F            @tab 0       @tab 1pF     @tab *
@item PB     @tab gate junction potential             @tab V            @tab 1       @tab 0.6
@item KF     @tab flicker noise coefficient           @tab -            @tab 0
@item AF     @tab flicker noise exponent              @tab -            @tab 1
@item FC     @tab coefficient for forward-bias
                  depletion capacitance formula       @tab -            @tab 0.5
@end multitable


@node Analyses and Output Control, Interactive Interpreter, Circuit Elements and Models, Top
@chapter Analyses and Output Control



The following command lines are for specifying analyses or plots within
the circuit description file.  Parallel commands exist in the
interactive command interpreter (detailed in the following section).
Specifying analyses and plots (or tables) in the input file is useful
for batch runs.  Batch mode is entered when either the -b option is
given or when the default input source is redirected from a file.  In
batch mode, the analyses specified by the control lines in the input
file (e.g. ".ac", ".tran", etc.)  are immediately executed (unless
".control" lines exists; see the section on the interactive command
interpreter).  If the -r rawfile option is given then all data generated
is written to a Ngspice rawfile.  The rawfile may be read by either the
interactive mode of Ngspice or by nutmeg; see the previous section for
details.  In this case, the .SAVE line (see below) may be used to record
the value of internal device variables (see Appendix B).

If a rawfile is not specified, then output plots (in "line-printer"
form) and tables can be printed according to the .PRINT, .PLOT, and
.FOUR control lines, described next.  .PLOT, .PRINT, and .FOUR lines are
meant for compatibility with Spice2.


@menu
* Simulator Variables (.OPTIONS)::  
* Initial Conditions::          
* Analyses::                    
* Batch Output::                
@end menu



@node  Simulator Variables (.OPTIONS), Initial Conditions, Analyses and Output Control, Analyses and Output Control
@section  Simulator Variables (.OPTIONS)


Various parameters of the simulations available in Ngspice can be altered
to control the accuracy, speed, or default values for some devices.
These parameters may be changed via the "set" command (described later
in the section on the interactive front-end) or via the ".OPTIONS" line:

 General form:

@example
     .OPTIONS OPT1 OPT2 ... (or OPT=OPTVAL ...)
@end example


 Examples:

@example
     .OPTIONS RELTOL=.005 TRTOL=8
@end example


The options line allows the user to reset program control and user
options for specific simulation purposes.  Additional options for Nutmeg
may be specified as well and take effect when Nutmeg reads the input
file.  Options specified to Nutmeg via the 'set' command are also passed
on to NGSPICE as if specified on a .OPTIONS line.  See the following
section on the interactive command interpreter for the parameters which
may be set with a .OPTIONS line and the format of the 'set' command.
Any combination of the following options may be included, in any order.
'x' (below) represents some positive number.

@vtable @code

@item ABSTOL=x

resets the absolute current error tolerance of the program.  The default
value is 1 picoamp.

@item BADMOS3

Use the older version of the MOS3 model with the "kappa" discontinuity.

@item CHGTOL=x

resets the charge tolerance of the program.  The default value is
1.0e-14.

@item DEFAD=x

resets the value for MOS drain diffusion area; the default is 0.0.

@item DEFAS=x

resets the value for MOS source diffusion area; the default is 0.0.

@item DEFL=x

resets the value for MOS channel length; the default is 100.0
micrometer.

@item DEFW=x

resets the value for MOS channel width; the default is 100.0 micrometer.

@item GMIN=x

resets the value of GMIN, the minimum conductance allowed by the
program.  The default value is 1.0e-12.

@item ITL1=x

resets the dc iteration limit.  The default is 100.

@item ITL2=x

resets the dc transfer curve iteration limit.  The default is 50.

@item ITL3=x

resets the lower transient analysis iteration limit.  the default value
is 4.  (Note: not implemented in Ngspice).

@item ITL4=x

resets the transient analysis timepoint iteration limit.  the default is
10.

@item ITL5=x

resets the transient analysis total iteration limit.  the default is
5000.  Set ITL5=0 to omit this test.  (Note: not implemented in Ngspice).

@item KEEPOPINFO

Retain the operating point information when either an AC, Distortion, or
Pole-Zero analysis is run.  This is particularly useful if the circuit
is large and you do not want to run a (redundant) ".OP" analysis.

@item METHOD=name

sets the numerical integration method used by NGSPICE.  Possible names are
"Gear" or "trapezoidal" (or just "trap").  The default is trapezoidal.

@item PIVREL=x

resets the relative ratio between the largest column entry and an
acceptable pivot value. The default value is 1.0e-3.  In the numerical
pivoting algorithm the allowed minimum pivot value is determined by
EPSREL=AMAX1(PIVREL*MAXVAL, PIVTOL) where MAXVAL is the maximum element
in the column where a pivot is sought (partial pivoting).

@item PIVTOL=x

resets the absolute minimum value for a matrix entry to be accepted as a
pivot.  The default value is 1.0e-13.

@item RELTOL=x

resets the relative error tolerance of the program.  The default value
is 0.001 (0.1%).

@item TEMP=x

Resets the operating temperature of the circuit.  The default value is
27 deg C (300 deg K).  TEMP can be overridden by a temperature
specification on any temperature dependent instance.

@item TNOM=x

resets the nominal temperature at which device parameters are measured.
The default value is 27 deg C (300 deg K).  TNOM can be overridden by a
specification on any temperature dependent device model.

@item TRTOL=x

resets the transient error tolerance.  The default value is 7.0.  This
parameter is an estimate of the factor by which NGSPICE overestimates the
actual truncation error.

@item TRYTOCOMPACT

Applicable only to the LTRA model.  When specified, the simulator tries
to condense LTRA transmission lines' past history of input voltages and
currents.

@item VNTOL=x

resets the absolute voltage error tolerance of the program.  The default
value is 1 microvolt.

@end vtable

In addition, the following options have the listed effect when operating
in spice2 emulation mode:

@table @code

@item ACCT

causes accounting and run time statistics to be printed

@item LIST

causes the summary listing of the input data to be printed

@item NOMOD

suppresses the printout of the model parameters

@item NOPAGE

suppresses page ejects

@item NODE

causes the printing of the node table.

@item OPTS

causes the option values to be printed.

@end table



@node  Initial Conditions, Analyses, Simulator Variables (.OPTIONS), Analyses and Output Control
@section  Initial Conditions



@menu
* Specify Initial Node Voltage Guesses::  
* Set Initial Conditions::      
@end menu

@node  Specify Initial Node Voltage Guesses, Set Initial Conditions, Initial Conditions, Initial Conditions
@subsection  .NODESET:  Specify Initial Node Voltage Guesses

 General form:

@example
  .NODESET V(NODNUM)=VAL V(NODNUM)=VAL ...
@end example


 Examples:

@example
  .NODESET V(12)=4.5 V(4)=2.23
@end example



The Nodeset line helps the program find the dc or initial transient
solution by making a preliminary pass with the specified nodes held to
the given voltages.  The restriction is then released and the iteration
continues to the true solution.  The .NODESET line may be necessary for
convergence on bistable or a-stable circuits.  In general, this line
should not be necessary.




@node Set Initial Conditions,  , Specify Initial Node Voltage Guesses, Initial Conditions
@subsection  .IC:  Set Initial Conditions

 General form:

@example
  .IC V(NODNUM)=VAL V(NODNUM)=VAL ...
@end example


 Examples:

@example
  .IC V(11)=5 V(4)=-5 V(2)=2.2
@end example



The IC line is for setting transient initial conditions.  It has two
different interpretations, depending on whether the UIC parameter is
specified on the .TRAN control line.  Also, one should not confuse this
line with the .NODESET line.  The .NODESET line is only to help dc
convergence, and does not affect final bias solution (except for
multi-stable circuits).  The two interpretations of this line are as
follows:

@enumerate

@item
When the UIC parameter is specified on the .TRAN line, then the node
voltages specified on the .IC control line are used to compute the
capacitor, diode, BJT, JFET, and MOSFET initial conditions.  This is
equivalent to specifying the IC=... parameter on each device line, but
is much more convenient.  The IC=...  parameter can still be specified
and takes precedence over the .IC values.  Since no dc bias (initial
transient) solution is computed before the transient analysis, one
should take care to specify all dc source voltages on the .IC control
line if they are to be used to compute device initial conditions.

@item
When the UIC parameter is not specified on the .TRAN control line, the
dc bias (initial transient) solution is computed before the transient
analysis.  In this case, the node voltages specified on the .IC control
line is forced to the desired initial values during the bias solution.
During transient analysis, the constraint on these node voltages is
removed.  This is the preferred method since it allows NGSPICE to compute
a consistent dc solution.
@end enumerate


@node  Analyses, Batch Output, Initial Conditions, Analyses and Output Control
@section  Analyses




@menu
* AC Small-Signal AC Analysis::  
* DC Transfer Function::        
* DISTRO Distortion Analysis::  
* NOISE Noise Analysis::        
* OP Operating Point Analysis::  
* PZ Pole-Zero Analysis::       
* SENS; DC or Small-Signal AC Sensitivity Analysis::  
* TF Transfer Function Analysis::  
* TRAN Transient Analysis::     
@end menu

@node  AC Small-Signal AC Analysis, DC Transfer Function, Analyses, Analyses
@subsection  .AC:  Small-Signal AC Analysis

 General form:

@example
  .AC DEC ND FSTART FSTOP
  .AC OCT NO FSTART FSTOP
  .AC LIN NP FSTART FSTOP
@end example


 Examples:

@example
  .AC DEC 10 1 10K
  .AC DEC 10 1K 100MEG
  .AC LIN 100 1 100HZ
@end example




DEC stands for decade variation, and ND is the number of points per
decade.  OCT stands for octave variation, and NO is the number of points
per octave.  LIN stands for linear variation, and NP is the number of
points.  FSTART is the starting frequency, and FSTOP is the final
frequency.  If this line is included in the input file, NGSPICE performs
an AC analysis of the circuit over the specified frequency range.  Note
that in order for this analysis to be meaningful, at least one
independent source must have been specified with an ac value.




@node  DC Transfer Function, DISTRO Distortion Analysis, AC Small-Signal AC Analysis, Analyses
@subsection  .DC:  DC Transfer Function

 General form:

@example
  .DC SRCNAM VSTART VSTOP VINCR [SRC2 START2 STOP2 INCR2]
@end example


 Examples:

@example
  .DC VIN 0.25 5.0 0.25
  .DC VDS 0 10 .5 VGS 0 5 1
  .DC VCE 0 10 .25 IB 0 10U 1U
  .DC RLoad 1k 2k 100
  .DC TEMP -15 75 5
@end example



The DC line defines the dc transfer curve source and sweep limits (again
with capacitors open and inductors shorted). SRCNAM is the name of an
independent voltage or current source, a resistor or the circuit temperature.
VSTART, VSTOP, and VINCR are the starting, final, and incrementing values 
respectively.  The first example causes the value of the voltage source VIN 
to be swept from 0.25 Volts to 5.0 Volts in increments of 0.25 Volts.  A 
second source (SRC2) may optionally be specified with associated sweep 
parameters.  In this case, the first source is swept over its range for each 
value of the second source.  This option can be useful for obtaining 
semiconductor device output characteristics.  See the second example circuit
description in Appendix A.




@node DISTRO Distortion Analysis, NOISE Noise Analysis, DC Transfer Function, Analyses
@subsection  .DISTO:  Distortion Analysis

 General form:

@example
  .DISTO DEC ND FSTART FSTOP <F2OVERF1>
  .DISTO OCT NO FSTART FSTOP <F2OVERF1>
  .DISTO LIN NP FSTART FSTOP <F2OVERF1>
@end example


 Examples:

@example
  .DISTO DEC 10 1kHz 100Mhz
  .DISTO DEC 10 1kHz 100Mhz 0.9
@end example




The Disto line does a small-signal distortion analysis of the circuit.
A multi-dimensional Volterra series analysis is done using
multi-dimensional Taylor series to represent the nonlinearities at the
operating point.  Terms of up to third order are used in the series
expansions.

If the optional parameter F2OVERF1 is not specified, .DISTO does a
harmonic analysis - i.e., it analyses distortion in the circuit using
only a single input frequency @math{F_1}, which is swept as specified by
arguments of the .DISTO command exactly as in the .AC command.  Inputs
at this frequency may be present at more than one input source, and
their magnitudes and phases are specified by the arguments of the
DISTOF1 keyword in the input file lines for the input sources (see the
description for independent sources).  (The arguments of the DISTOF2
keyword are not relevant in this case).

The analysis produces information about the A.C.  values of all node
voltages and branch currents at the harmonic frequencies @math{2F_1} and
@math{3F_1}, vs. the input frequency @math{F_1} as it is swept.  (A
value of 1 (as a complex distortion output) signifies
@math{\cos(2J(2F_1)t)} at @math{2F_1} and @math{\cos(2J(3F_1)t)} at
@math{3F_1}, using the convention that 1 at the input fundamental
frequency is equivalent to @math{\cos(2JF_1t)}.)  The distortion
component desired (@math{2F_1} or @math{3F_1}) can be selected using
commands in nutmeg, and then printed or plotted.  (Normally, one is
interested primarily in the magnitude of the harmonic components, so the
magnitude of the AC distortion value is looked at).  It should be noted
that these are the A.C.  values of the actual harmonic components, and
are not equal to HD2 and HD3.  To obtain HD2 and HD3, one must divide by
the corresponding A.C. values at @math{F_1}, obtained from an .AC line.
This division can be done using nutmeg commands.

If the optional F2OVERF1 parameter is specified, it should be a real
number between (and not equal to) 0.0 and 1.0; in this case, .DISTO does
a spectral analysis.  It considers the circuit with sinusoidal inputs at
two different frequencies @math{F_1} and F_2.  @math{F_1} is swept
according to the .DISTO control line options exactly as in the .AC
control line.  @math{F_2} is kept fixed at a single frequency as @math{F_1}
sweeps - the value at which it is kept fixed is equal to F2OVERF1 times
FSTART.  Each independent source in the circuit may potentially have two
(superimposed) sinusoidal inputs for distortion, at the frequencies
@math{F_1} and F_2.  The magnitude and phase of the @math{F_1} component
are specified by the arguments of the DISTOF1 keyword in the source's
input line (see the description of independent sources); the magnitude
and phase of the @math{F_2} component are specified by the arguments of the
DISTOF2 keyword.  The analysis produces plots of all node
voltages/branch currents at the intermodulation product frequencies
@math{F_1 + F_2}, @math{F_1 - F_2}, and @math{(2 F_1) - F_2}, vs the
swept frequency @math{F_1}.  The IM product of interest may be selected
using the setplot command, and displayed with the print and plot
commands.  It is to be noted as in the harmonic analysis case, the
results are the actual AC voltages and currents at the intermodulation
frequencies, and need to be normalized with respect to .AC values to
obtain the IM parameters.

If the DISTOF1 or DISTOF2 keywords are missing from the description of
an independent source, then that source is assumed to have no input at
the corresponding frequency.  The default values of the magnitude and
phase are 1.0 and 0.0 respectively.  The phase should be specified in
degrees.

It should be carefully noted that the number F2OVERF1 should ideally be
an irrational number, and that since this is not possible in practice,
efforts should be made to keep the denominator in its fractional
representation as large as possible, certainly above 3, for accurate
results (i.e., if F2OVERF1 is represented as a fraction @math{A/B},
where @math{A} and @math{B} are integers with no common factors,
@math{B} should be as large as possible; note that @math{A < B} because
F2OVERF1 is constrained to be @math{< 1}).  To illustrate why, consider
the cases where F2OVERF1 is 49/100 and 1/2.  In a spectral analysis, the
outputs produced are at @math{F_1 + F_2}, @math{F_1 - F_2} and @math{2
F_1 - F_2}.  In the latter case, @math{F_1 - F_2 = F_2}, so the result
at the @math{F_1 - F_2} component is erroneous because there is the
strong fundamental @math{F_2} component at the same frequency.  Also,
@math{F_1 + F_2 = 2 F_1 - F_2} in the latter case, and each result is
erroneous individually.  This problem is not there in the case where
F2OVERF1 = 49/100, because @math{F_1-F_2 = 51/100} @math{F_1 < > 49/100}
@math{F_1 = F_2}.  In this case, there are two very closely spaced
frequency components at @math{F_2} and @math{F_1 - F_2}.  One of the
advantages of the Volterra series technique is that it computes
distortions at mix frequencies expressed symbolically (i.e. @math{n F_1
+ m F_2}), therefore one is able to obtain the strengths of distortion
components accurately even if the separation between them is very small,
as opposed to transient analysis for example.  The disadvantage is of
course that if two of the mix frequencies coincide, the results are not
merged together and presented (though this could presumably be done as a
postprocessing step).  Currently, the interested user should keep track
of the mix frequencies himself or herself and add the distortions at
coinciding mix frequencies together should it be necessary.




@node NOISE Noise Analysis, OP Operating Point Analysis, DISTRO Distortion Analysis, Analyses
@subsection  .NOISE:  Noise Analysis

 General form:

@example
     .NOISE V(OUTPUT <,REF>) SRC ( DEC | LIN | OCT ) PTS FSTART FSTOP
     + <PTS_PER_SUMMARY>
@end example


 Examples:

@example
     .NOISE V(5) VIN DEC 10 1kHZ 100Mhz
     .NOISE V(5,3) V1 OCT 8 1.0 1.0e6 1
@end example



The Noise line does a noise analysis of the circuit.  OUTPUT is the node
at which the total output noise is desired; if REF is specified, then
the noise voltage V(OUTPUT) - V(REF) is calculated.  By default, REF is
assumed to be ground.  SRC is the name of an independent source to which
input noise is referred.  PTS, FSTART and FSTOP are .AC type parameters
that specify the frequency range over which plots are desired.
PTS_PER_SUMMARY is an optional integer; if specified, the noise
contributions of each noise generator is produced every PTS_PER_SUMMARY
frequency points.

The .NOISE control line produces two plots - one for the Noise Spectral
Density curves and one for the total Integrated Noise over the specified
frequency range.  All noise voltages/currents are in squared units
(V@math{^2} /Hz and A@math{^2}/Hz for spectral density, V@math{^2} and
A@math{^2} for integrated noise).



@node OP Operating Point Analysis, PZ Pole-Zero Analysis, NOISE Noise Analysis, Analyses
@subsection  .OP:  Operating Point Analysis

 General form:

@example
     .OP
@end example


The inclusion of this line in an input file directs NGSPICE to determine
the dc operating point of the circuit with inductors shorted and
capacitors opened.  Note: a DC analysis is automatically performed prior
to a transient analysis to determine the transient initial conditions,
and prior to an AC small-signal, Noise, and Pole-Zero analysis to
determine the linearized, small-signal models for nonlinear devices (see
the KEEPOPINFO variable above).




@node PZ Pole-Zero Analysis, SENS; DC or Small-Signal AC Sensitivity Analysis, OP Operating Point Analysis, Analyses
@subsection  .PZ:  Pole-Zero Analysis

 General form:

@example
     .PZ NODE1 NODE2 NODE3 NODE4 CUR POL
     .PZ NODE1 NODE2 NODE3 NODE4 CUR ZER
     .PZ NODE1 NODE2 NODE3 NODE4 CUR PZ
     .PZ NODE1 NODE2 NODE3 NODE4 VOL POL
     .PZ NODE1 NODE2 NODE3 NODE4 VOL ZER
     .PZ NODE1 NODE2 NODE3 NODE4 VOL PZ
@end example


 Examples:

@example
     .PZ 1 0 3 0 CUR POL
     .PZ 2 3 5 0 VOL ZER
     .PZ 4 1 4 1 CUR PZ
@end example


CUR stands for a transfer function of the type (output voltage)/(input
current) while VOL stands for a transfer function of the type (output
voltage)/(input voltage).  POL stands for pole analysis only, ZER for
zero analysis only and PZ for both.  This feature is provided mainly
because if there is a nonconvergence in finding poles or zeros, then, at
least the other can be found.  Finally, NODE1 and NODE2 are the two
input nodes and NODE3 and NODE4 are the two output nodes.  Thus, there
is complete freedom regarding the output and input ports and the type of
transfer function.

In interactive mode, the command syntax is the same except that the
first field is PZ instead of .PZ.  To print the results, one should use
the command 'print all'.




@node SENS; DC or Small-Signal AC Sensitivity Analysis, TF Transfer Function Analysis, PZ Pole-Zero Analysis, Analyses
@subsection  .SENS:  DC or Small-Signal AC Sensitivity Analysis

 General form:

@example
     .SENS OUTVAR
     .SENS OUTVAR AC DEC ND FSTART FSTOP
     .SENS OUTVAR AC OCT NO FSTART FSTOP
     .SENS OUTVAR AC LIN NP FSTART FSTOP
@end example


 Examples:

@example
     .SENS V(1,OUT)
     .SENS V(OUT) AC DEC 10 100 100k
     .SENS I(VTEST)
@end example




The sensitivity of OUTVAR to all non-zero device parameters is
calculated when the SENS analysis is specified.  OUTVAR is a circuit
variable (node voltage or voltage-source branch current).  The first
form calculates sensitivity of the DC operating-point value of OUTVAR.
The second form calculates sensitivity of the AC values of OUTVAR.  The
parameters listed for AC sensitivity are the same as in an AC analysis
(see ".AC" above).  The output values are in dimensions of change in
output per unit change of input (as opposed to percent change in output
or per percent change of input).




@node TF Transfer Function Analysis, TRAN Transient Analysis, SENS; DC or Small-Signal AC Sensitivity Analysis, Analyses
@subsection  .TF:  Transfer Function Analysis

 General form:

@example
     .TF OUTVAR INSRC
@end example


 Examples:

@example
     .TF V(5, 3) VIN
     .TF I(VLOAD) VIN
@end example



The TF line defines the small-signal output and input for the dc
small-signal analysis.  OUTVAR is the smallsignal output variable and
INSRC is the small-signal input source.  If this line is included, NGSPICE
computes the dc small-signal value of the transfer function
(output/input), input resistance, and output resistance.  For the first
example, NGSPICE would compute the ratio of V(5, 3) to VIN, the
small-signal input resistance at VIN, and the smallsignal output
resistance measured across nodes 5 and 3.




@node TRAN Transient Analysis,  , TF Transfer Function Analysis, Analyses
@subsection  .TRAN:  Transient Analysis

 General form:

@example
     .TRAN TSTEP TSTOP <TSTART <TMAX>>
@end example


 Examples:

@example
     .TRAN 1NS 100NS
     .TRAN 1NS 1000NS 500NS
     .TRAN 10NS 1US
@end example



TSTEP is the printing or plotting increment for lineprinter output.  For
use with the post-processor, TSTEP is the suggested computing increment.
TSTOP is the final time, and TSTART is the initial time.  If TSTART is
omitted, it is assumed to be zero.  The transient analysis always begins
at time zero.  In the interval <zero, TSTART>, the circuit is analyzed
(to reach a steady state), but no outputs are stored.  In the interval
<TSTART, TSTOP>, the circuit is analyzed and outputs are stored.  TMAX
is the maximum stepsize that NGSPICE uses; for default, the program
chooses either TSTEP or (TSTOP-TSTART)/50.0, whichever is smaller.  TMAX
is useful when one wishes to guarantee a computing interval which is
smaller than the printer increment, TSTEP.

UIC (use initial conditions) is an optional keyword which indicates that
the user does not want NGSPICE to solve for the quiescent operating point
before beginning the transient analysis.  If this keyword is specified,
NGSPICE uses the values specified using IC=... on the various elements as
the initial transient condition and proceeds with the analysis.  If the
.IC control line has been specified, then the node voltages on the .IC
line are used to compute the initial conditions for the devices.  Look
at the description on the .IC control line for its interpretation when
UIC is not specified.



@node  Batch Output,  , Analyses, Analyses and Output Control
@section  Batch Output

@menu
* SAVE::                        
* PRINT::                       
* PLOT::                        
* FOUR  Fourier Analysis of Transient Analysis  Output::  
@end menu

@node SAVE, PRINT, Batch Output, Batch Output
@subsection  .SAVE Lines

 General form:

@example
     .SAVE vector vector vector ...
@end example


 Examples:

@example
     .SAVE i(vin) input output
     .SAVE @@m1[id]
@end example



The vectors listed on the .SAVE line are recorded in the rawfile for use
later with ngspice or nutmeg (nutmeg is just the data-analysis half of
ngspice, without the ability to simulate).  The standard vector names are
accepted.  If no .SAVE line is given, then the default set of vectors
are saved (node voltages and voltage source branch currents).  If .SAVE
lines are given, only those vectors specified are saved.  For more
discussion on internal device data, see Appendix B.  See also the
section on the interactive command interpreter for information on how to
use the rawfile.



@node PRINT, PLOT, SAVE, Batch Output
@subsection  .PRINT Lines

 General form:

@example
     .PRINT PRTYPE OV1 <OV2 ... OV8>
@end example


 Examples:

@example
     .PRINT TRAN V(4) I(VIN)
     .PRINT DC V(2) I(VSRC) V(23, 17)
     .PRINT AC VM(4, 2) VR(7) VP(8, 3)
@end example


The Print line defines the contents of a tabular listing of one to eight
output variables.  PRTYPE is the type of the analysis (DC, AC, TRAN,
NOISE, or DISTO) for which the specified outputs are desired.  The form
for voltage or current output variables is the same as given in the
previous section for the print command; Spice2 restricts the output
variable to the following forms (though this restriction is not enforced
by Ngspice):


@table @code

@item V(N1<,N2>)

specifies the voltage difference between nodes N1 and N2.  If N2 (and
the preceding comma) is omitted, ground (0) is assumed.  See the print
command in the previous section for more details.  For compatibility
with spice2, the following five additional values can be accessed for
the ac analysis by replacing the "V" in V(N1,N2) with:

@example
              VR    -    real part
              VI    -    imaginary part
              VM    -    magnitude
              VP    -    phase
              VDB   -    20  log10(magnitude)
@end example

@item I(VXXXXXXX)

specifies the current flowing in the independent voltage source named
VXXXXXXX.  Positive current flows from the positive node, through the
source, to the negative node.  For the ac analysis, the corresponding
replacements for the letter I may be made in the same way as described
for voltage outputs.

@end table

Output variables for the noise and distortion analyses have a different
general form from that of the other analyses.

There is no limit on the number of .PRINT lines for each type of
analysis.



@node PLOT, FOUR  Fourier Analysis of Transient Analysis  Output, PRINT, Batch Output
@subsection  .PLOT Lines

 General form:

@example
     .PLOT PLTYPE OV1 <(PLO1, PHI1)> <OV2 <(PLO2, PHI2)> ... OV8>
@end example


 Examples:

@example
     .PLOT DC V(4) V(5) V(1)
     .PLOT TRAN V(17, 5) (2, 5) I(VIN) V(17) (1, 9)
     .PLOT AC VM(5) VM(31, 24) VDB(5) VP(5)
     .PLOT DISTO HD2 HD3(R) SIM2
     .PLOT TRAN V(5, 3) V(4) (0, 5) V(7) (0, 10)
@end example


The Plot line defines the contents of one plot of from one to eight
output variables.  PLTYPE is the type of analysis (DC, AC, TRAN, NOISE,
or DISTO) for which the specified outputs are desired.  The syntax for
the OVI is identical to that for the .PRINT line and for the plot
command in the interactive mode.


The overlap of two or more traces on any plot is indicated by the letter
X.

When more than one output variable appears on the same plot, the first
variable specified is printed as well as plotted.  If a printout of all
variables is desired, then a companion .PRINT line should be included.

There is no limit on the number of .PLOT  lines  specified for each type of analysis.



@node FOUR  Fourier Analysis of Transient Analysis  Output,  , PLOT, Batch Output
@subsection  .FOUR:  Fourier Analysis of Transient Analysis  Output

 General form:

@example
     .FOUR FREQ OV1 <OV2 OV3 ...>
@end example


 Examples:

@example
     .FOUR 100K  V(5)
@end example


The Four (or Fourier) line controls whether NGSPICE performs a Fourier
analysis as a part of the transient analysis.  FREQ is the fundamental
frequency, and OV1, desired.  The Fourier analysis is performed over the
interval <TSTOP-period, TSTOP>, where TSTOP is the final time specified
for the transient analysis, and period is one period of the fundamental
frequency.  The dc component and the first nine harmonics are
determined.  For maximum accuracy, TMAX (see the .TRAN line) should be
set to period/100.0 (or less for very high-Q circuits).



@node Interactive Interpreter, Bibliography, Analyses and Output Control, Top
@chapter Interactive Interpreter

Ngspice consists of a simulator and a front-end for data analysis and
plotting.  The front-end may be run as a separate "stand-alone" program
under the name Nutmeg.

Nutmeg will read in the "raw" data output file created by ngspice -r or
with the write command in an interactive Ngspice session.  Nutmeg or
interactive Ngspice can plot data from a simulation on a graphics
terminal or a workstation display.  Most of the commands available in
the interactive Ngspice front end are available in nutmeg; where this is
not the case, ngspice-only commands have been marked with an asterisk
("*").  Note that the raw output file is different from the data that
Spice2 writes to the standard output, which may also be produced by
ngspice with the "-b" command line option.

Ngspice and Nutmeg use the X Window System for plotting if they find the
environment variable DISPLAY.  Otherwise, a graphics-terminal
independent interface (MFB) is used.  If you are using X on a
workstation, the DISPLAY variable should already be set; if you want to
display graphics on a system different from the one you are running
Ngspice or Nutmeg on, DISPLAY should be of the form "machine:0.0".  See
the appropriate documentation on the X Window System for more details.


 Command Synopsis

@example
ngspice [ -n ] [ -t term ] [ -r rawfile] [ -b ] [ -i ] [ input file ... ]

nutmeg [ - ] [ -n ] [ -t term ] [ datafile ... ]
@end example

Options are:

@table @code

@item -

Don't try to load the default data file ("rawspice.raw") if no other
files are given.  Nutmeg only.

@item -n (or -N)

Don't try to source the file ".spiceinit" upon startup.  Normally ngspice
and nutmeg try to find the file in the current directory, and if it is
not found then in the user's home directory.

@item -t term (or -T term)

The program is being run on a terminal with mfb name term.

@item -b (or -B)

Run in batch mode.  Ngspice reads the default input source (e.g.
keyboard) or reads the given input file and performs the analyses
specified; output is either Spice2-like line-printer plots ("ascii
plots") or a ngspice rawfile.  See the following section for details.
Note that if the input source is not a terminal (e.g.  using the IO
redirection notation of "<") Ngspice defaults to batch mode (-i
overrides).  This option is valid for Ngspice only.

@item  -s (or -S)

Run in server mode.  This is like batch mode, except that a temporary
rawfile is used and then written to the standard output, preceded by a
line with a single "@@", after the simulation is done.  This mode is used
by the ngspice daemon.  This option is valid for Ngspice only.

@item -i (or -I)

Run in interactive mode.  This is useful if the standard input is not a
terminal but interactive mode is desired.  Command completion is not
available unless the standard input is a terminal, however.  This option
is valid for Ngspice only.

@item -r rawfile (or -P rawfile)

Use rawfile as the default file into which the results of the simulation
are saved.  This option is valid for Ngspice only.

@end table

Further arguments to ngspice are taken to be Ngspice input files, which are
read and saved (if running in batch mode then they are run immediately).
Ngspice accepts most Spice2 input file, and output ascii plots, fourier
analyses, and node printouts as specified in .plot, .four, and .print
cards.  If an out parameter is given on a .width card, the effect is the
same as set width = ....  Since Ngspice ascii plots do not use multiple
ranges, however, if vectors together on a .plot card have different
ranges they are not provide as much information as they would in Spice2.
The output of Ngspice is also much less verbose than Spice2, in that the
only data printed is that requested by the above cards.

For nutmeg, further arguments are taken to be data files in binary or
ascii format (see sconvert(1)) which are loaded into nutmeg.  If the
file is in binary format, it may be only partially completed (useful for
examining Spice2 output before the simulation is finished).  One file
may contain any number of data sets from different analyses.


@menu
* Expressions::                 
* Command Interpretation::      
* Commands::                    
* Variables::                   
* Bugs::                        
@end menu

@node Expressions, Command Interpretation, Interactive Interpreter, Interactive Interpreter
@section Expressions, Functions, and Constants

Ngspice and Nutmeg data is in the form of vectors: time, voltage, etc.
Each vector has a type, and vectors can be operated on and combined
algebraically in ways consistent with their types.  Vectors are normally
created when a data file is read in (see the load command below), and
when the initial datafile is loaded.  They can also be created with the
let command.


An expression is an algebraic formula involving vectors and scalars (a
scalar is a vector of length 1) and the following operations:

@example
             +   -    *    /    ^   %
@end example

% is the modulo operator, and the comma operator has two meanings: if it
is present in the argument list of a user definable function, it serves
to separate the arguments.  Otherwise, the term @code{x , y} is
synonymous with @code{x + j(y)}.


Also available are the logical operations & (and), | (or), !  (not), and
the relational operations <, >, >=, <=, =, and <> (not equal).  If used
in an algebraic expression they work like they would in C, producing
values of 0 or 1.  The relational operators have the following synonyms:

@example
                       gt    >
                       lt    <
                       ge    >=
                       le    <=
                       ne    <>
                       eq    =
                       and   &
                       or    |
                       not   !
@end example


These are useful when < and > might be confused with IO redirection
(which is almost always).



The following functions are available:

@ftable @code

@item mag(vector)

The magnitude of vector

@item ph(vector)

The phase of vector

@item j(vector)

i (sqrt(-1)) times vector

@item real(vector)

The real component of vector

@item imag(vector)

The imaginary part of vector

@item db(vector)

20 log10(mag(vector))

@item log(vector)

The logarithm (base 10) of vector

@item ln(vector)

The natural logarithm (base e) of vector

@item exp(vector)

e to the vector power

@item abs(vector)

The absolute value of vector.

@item sqrt(vector)

The square root of vector.

@item sin(vector)

The sine of vector.

@item cos(vector)

The cosine of vector.

@item tan(vector)

The tangent of vector.

@item atan(vector)

The inverse tangent of vector.

@item norm(vector)

The vector normalized to 1 (i.e, the largest magnitude of any component
is 1).

@item rnd(vector)

A vector with each component a random integer between 0 and the absolute
value of the vectors's corresponding component.

@item mean(vector)

The result is a scalar (a length 1 vec tor) that is the mean of the
elements of vector.

@item vector(number)

The result is a vector of length number, with elements 0, 1, ... number
- 1.  If number is a vector then just the first element is taken, and if
it isn't an integer then the floor of the magnitude is used.

@item length(vector)

The length of vector.

@item interpolate(plot.vector)

The result of interpolating the named vector onto the scale of
the current plot.  This function uses the variable polydegree to
determine the degree of interpolation.

@item deriv(vector)

Calculates the derivative of the given vector.  This uses numeric
differentiation by interpolating a polynomial and may not produce
satisfactory results (particularly with iterated differentiation).  The
implementation only calculates the derivative with respect to the real
component of that vector's scale.

@end ftable

A vector may be either the name of a vector already defined or a
floating-point number (a scalar).  A number may be written in any format
acceptable to NGSPICE, such as 14.6Meg or -1.231e-4.  Note that you can
either use scientific notation or one of the abbreviations like MEG or
G, but not both.  As with NGSPICE, a number may have trailing alphabetic
characters after it.

The notation expr [num] denotes the num'th element of expr.  For
multi-dimensional vectors, a vector of one less dimension is returned.
Also for multi-dimensional vectors, the notation expr[m][n] will return
the nth element of the mth subvector.  To get a subrange of a vector,
use the form expr[lower, upper].

To reference vectors in a plot that is not the current plot (see the
setplot command, below), the notation plotname.vecname can be used.


Either a plotname or a vector name may be the wildcard all.  If the
plotname is all, matching vectors from all plots are specified, and if
the vector name is all, all vectors in the specified plots are
referenced.  Note that you may not use binary operations on expressions
involving wildcards - it is not obvious what all + all should denote,
for instance.  Thus some (contrived) examples of expressions are:

@example
     cos(TIME) + db(v(3))
     sin(cos(log([1 2 3 4 5 6 7 8 9 10])))
     TIME * rnd(v(9)) - 15 * cos(vin#branch) ^ [7.9e5 8]
     not ((ac3.FREQ[32] & tran1.TIME[10]) gt 3)
@end example


Vector names in ngspice may have a name such as @@name[param], where name
is either the name of a device instance or model.  This denotes the
value of the param parameter of the device or model.  See Appendix B for
details of what parameters are available.  The value is a vector of
length 1.  This function is also available with the show command, and is
available with variables for convenience for command scripts.


There are a number of pre-defined constants in nutmeg.  They are:

@vtable @code

@item pi

J (3.14159...)

@item e

The base of natural logarithms (2.71828...)

@item c

The speed of light (299,792,500 m/sec)

@item i

The square root of -1

@item kelvin

Absolute 0 in Centigrade (-273.15 @math{^o}C)

@item echarge

The charge on an electron (1.6021918e-19 C)

@item boltz

Boltzman's constant (1.3806226e-23)

@item planck

Planck's constant (h = 6.626200e-34)

@end vtable

These are all in MKS units.  If you have another variable with a name
that conflicts with one of these then it takes precedence.


@menu
* Command Interpretation::      
* Commands::                    
* Variables::                   
* Bugs::                        
@end menu

@node Command Interpretation, Commands, Expressions, Interactive Interpreter
@section  Command Interpretation

If a word is typed as a command, and there is no built-in command with
that name, the directories in the sourcepath list are searched in order
for the file.  If it is found, it is read in as a command file (as if it
were sourced).  Before it is read, however, the variables argc and argv
are set to the number of words following the filename on the command
line, and a list of those words respectively.  After the file is
finished, these variables are unset.  Note that if a command file calls
another, it must save its argv and argc since they are altered.  Also,
command files may not be re-entrant since there are no local variables.
(Of course, the procedures may explicitly manipulate a stack...) This
way one can write scripts analogous to shell scripts for nutmeg and
Ngspice.

Note that for the script to work with Ngspice, it must begin with a blank
line (or whatever else, since it is thrown away) and then a line with
.control on it.  This is an unfortunate result of the source command
being used for both circuit input and command file execution.  Note also
that this allows the user to merely type the name of a circuit file as a
command and it is automatically run.  The commands are executed
immediately, without running any analyses that may be specified in the
circuit (to execute the analyses before the script executes, include a
"run" command in the script).

There are various command scripts installed in
/usr/local/lib/spice/scripts (or whatever the path is on your machine),
and the default sourcepath includes this directory, so you can use these
command files (almost) like builtin commands.


@node Commands, Variables, Command Interpretation, Interactive Interpreter
@section Commands

@menu
* AC::                          
* Alias::                       
* Alter::                       
* Asciiplot::                   
* Aspice::                      
* Bug::                         
* Cd::                          
* Destroy::                     
* DC::                          
* Define::                      
* Delete::                      
* Diff::                        
* Display::                     
* Echo::                        
* Edit::                        
* Fourier::                     
* Hardcopy::                    
* Help::                        
* History::                     
* Iplot::                       
* Jobs::                        
* Let::                         
* Linearize::                   
* Listing::                     
* Load::                        
* Op::                          
* Plot::                        
* Print::                       
* Quit::                        
* Rehash::                      
* Reset::                       
* Reshape::                     
* Resume::                      
* Rspice::                      
* Run::                         
* Rusage::                      
* Save::                        
* Sens::                        
* Set::                         
* Setcirc::                     
* Setplot::                     
* Settype::                     
* Shell::                       
* Shift::                       
* Show::                        
* Showmod::                     
* Source::                      
* Status::                      
* Step::                        
* Stop::                        
* Tf::                          
* Trace::                       
* Tran::                        
* Transpose::                   
* Unalias::                     
* Undefine::                    
* Unset::                       
* Version::                     
* Where::                       
* Write::                       
* Xgraph::                      
* While - End::                 
* Repeat - End::                
* Dowhile - End::               
* Foreach - End::               
* If - Then - Else::            
* Label::                       
* Goto::                        
* Continue::                    
* Break::                       
@end menu


@node  AC, Alias, Commands, Commands
@subsection  Ac*: Perform an AC, small-signal frequency  response analysis

 General Form:

@example
     ac ( DEC | OCT | LIN ) N Fstart Fstop
@end example


Do an ac analysis.  See the previous sections of this manual for more
details.



@node  Alias, Alter, AC, Commands
@subsection  Alias:  Create an alias for a command

 General Form:

@example
     alias [word] [text ...]
@end example


Causes word to be aliased to text.  History substitutions may be used,
as in C-shell aliases.



@node  Alter, Asciiplot, Alias, Commands
@subsection  Alter*:  Change a device or model parameter

 General Form:

@example
     alter device value
     alter device parameter value [ parameter value ]
@end example


Alter changes the value for a device or a specified parameter of a
device or model.  The first form is used by simple devices which have
one principal value (resistors, capacitors, etc.)  where the second form
is for more complex devices (bjt's, etc.).  Model parameters can be
changed with the second form if the name contains a "#".

For specifying vectors as values, start the vector with "[", followed by
the values in the vector, and end with "]".  Be sure to place a space
between each of the values and before and after the "[" and "]".



@node Asciiplot, Aspice, Alter, Commands
@subsection Asciiplot: Plot values using old-style character plots

 General Form:

@example
     asciiplot plotargs
@end example


Produce a line printer plot of the vectors.  The plot is sent to the
standard output, so you can put it into a file with asciiplot args ... >
file.  The set options width, height, and nobreak determine the width
and height of the plot, and whether there are page breaks, respectively.
Note that you will have problems if you try to asciiplot something with
an X-scale that isn't monotonic (i.e, something like sin(TIME) ),
because asciiplot uses a simple-minded linear interpolation.



@node  Aspice, Bug, Asciiplot, Commands
@subsection  Aspice: Asynchronous ngspice run

 General Form:

@example
     aspice input-file [output-file]
@end example


Start a NGSPICE run, and when it is finished load the resulting data.
The raw data is kept in a temporary file.  If output-file is specified
then the diagnostic output is directed into that file, otherwise it is
thrown away.



@node  Bug, Cd, Aspice, Commands
@subsection  Bug:  Mail a bug report

 General Form:

@example
     bug
@end example


Send a bug report.  Please include a short summary of the problem, the
version number and name of the operating system that you are running,
the version of ngspice that you are running, and the relevant ngspice input
file.  (If you have defined BUGADDR, the mail is delivered to there.)



@node  Cd, Destroy, Bug, Commands
@subsection  Cd: Change directory

 General Form:

@example
     cd [directory]
@end example


Change the current working directory to directory, or to the user's home
directory if none is given.



@node  Destroy, DC, Cd, Commands
@subsection  Destroy: Delete a data set

 General Form:

@example
     destroy [plotnames | all]
@end example


Release the memory holding the data for the  specified runs.



@node  DC, Define, Destroy, Commands
@subsection  Dc*: Perform a DC-sweep analysis

 General Form:

@example
     dc Source-Name Vstart Vstop Vincr [ Source2 Vstart2 Vstop2 Vincr2 ]
@end example


Do a dc transfer curve analysis.  See the previous sections of this
manual for more details.



@node  Define, Delete, DC, Commands
@subsection  Define:  Define a function

 General Form:

@example
     define function(arg1, arg2, ...) expression
@end example


Define the user-definable function with the name function and arguments
arg1, arg2, ... to be expression, which may involve the arguments.  When
the function is later used, the arguments it is given are substituted
for the formal arguments when it is parsed.  If expression is not
present, any definition for function is printed, and if there are no
arguments to define then all currently active definitions are printed.
Note that you may have different functions defined with the same name
but different arities.



Some useful definitions are:

@example
     define max(x,y) (x > y) * x + (x <= y) * y
     define min(x,y) (x < y) * x + (x >= y) * y
@end example



@node Delete, Diff, Define, Commands
@subsection Delete*: Remove a trace or breakpoint

 General Form:

@example
     delete [ debug-number ... ]
@end example


Delete the specified breakpoints and traces.  The debug numbers are
those shown by the status command (unless you do status > file, in which
case the debug numbers are not printed).



@node Diff, Display, Delete, Commands
@subsection Diff:  Compare vectors

 General Form:

@example
     diff plot1 plot2 [vec ...]
@end example


Compare all the vectors in the specified plots, or only the named
vectors if any are given.  There are different vectors in the two plots,
or any values in the vectors differ significantly the difference is
reported.  The variable diff_abstol, diff_reltol, and diff_vntol are
used to determine a significant difference.



@node  Display, Echo, Diff, Commands
@subsection  Display:  List known vectors and types

 General Form:

@example
     display [varname ...]
@end example


Prints a summary of currently defined vectors, or of the names
specified.  The vectors are sorted by name unless the variable nosort is
set.  The information given is the name of the vector, the length, the
type of the vector, and whether it is real or complex data.
Additionally, one vector is labelled [scale].  When a command such as
plot is given without a vs argument, this scale is used for the X-axis.
It is always the first vector in a rawfile, or the first vector defined
in a new plot.  If you undefine the scale (i.e, let TIME = []), one of
the remaining vectors becomes the new scale (which is undetermined).



@node  Echo, Edit, Display, Commands
@subsection  Echo:  Print text

 General Form:

@example
     echo [text...]
@end example


Echos the given text to the screen.



@node  Edit, Fourier, Echo, Commands
@subsection  Edit*: Edit the current circuit

 General Form:

@example
     edit [ file ]
@end example


Print the current Ngspice input file into a file, call up the editor on
that file and allow the user to modify it, and then read it back in,
replacing the original file.  If a filename is given, then edit that
file and load it, making the circuit the current one.



@node  Fourier, Hardcopy, Edit, Commands
@subsection  Fourier: Perform a fourier transform

 General Form:

@example
     fourier fundamental_frequency [value ...]
@end example


Does a fourier analysis of each of the given values, using the first 10
multiples of the fundamental frequency (or the first nfreqs, if that
variable is set - see below).  The output is like that of the .four
Ngspice line.  The values may be any valid expression.  The values are
interpolated onto a fixed-space grid with the number of points given by
the fourgridsize variable, or 200 if it is not set.  The interpolation
is of degree polydegree if that variable is set, or 1.  If polydegree is
0, then no interpolation is done.  This is likely to give erroneous
results if the time scale is not monotonic, though.



@node  Hardcopy, Help, Fourier, Commands
@subsection  Hardcopy:  Save a plot to a file for printing

 General Form:

@example
     hardcopy file plotargs
@end example


Just like plot, except creates a file called file containing the plot.
The file is an image in plot(5) format, and can be printed by either the
plot(1) program or lpr with the -g flag.



@node  Help, History, Hardcopy, Commands
@subsection  Help:  Print summaries of Ngspice commands

 General Form:

@example
     help [all] [command ...]
@end example


Prints help.  If the argument all is given, a short description of
everything you could possibly type is printed.  If commands are given,
descriptions of those commands are printed.  Otherwise help for only a
few major commands is printed.



@node  History, Iplot, Help, Commands
@subsection  History:  Review previous commands

 General Form:

@example
     history [number]
@end example


Print out the history, or the last number commands typed at the
keyboard.  Note: in Ngspice version 3a7 and earlier, all commands
(including ones read from files) were saved.



@node  Iplot, Jobs, History, Commands
@subsection  Iplot*: Incremental plot

 General Form:

@example
     iplot [ node ...]
@end example


Incrementally plot the values of the nodes while Ngspice runs.  The iplot
command can be used with the where command to find trouble spots in a
transient simulation.



@node  Jobs, Let, Iplot, Commands
@subsection  Jobs:  List active asynchronous ngspice runs

 General Form:

@example
     jobs
@end example


Report on the asynchronous NGSPICE jobs currently running.  Nutmeg
checks to see if the jobs are finished every time you execute a command.
If it is done then the data is loaded and becomes available.



@node  Let, Linearize, Jobs, Commands
@subsection  Let:  Assign a value to a vector

 General Form:

@example
     let name = expr
@end example


Creates a new vector called name with the value specified by expr, an
expression as described above.  If expr is [] (a zero-length vector)
then the vector becomes undefined.  Individual elements of a vector may
be modified by appending a subscript to name (ex. name[0]).  If there
are no arguments, let is the same as display.



@node  Linearize, Listing, Let, Commands
@subsection  Linearize*:  Interpolate to a linear scale

 General Form:

@example
     linearize vec ...
@end example


Create a new plot with all of the vectors in the current plot, or only
those mentioned if arguments are given.  The new vectors are
interpolated onto a linear time scale, which is determined by the values
of tstep, tstart, and tstop in the currently active transient analysis.
The currently loaded input file must include a transient analysis (a
tran command may be run interactively before the last reset,
alternately), and the current plot must be from this transient analysis.
This command is needed because Ngspice doesn't output the results from a
transient analysis in the same manner that Spice2 did.



@node  Listing, Load, Linearize, Commands
@subsection  Listing*: Print a listing of the current circuit

 General Form:

@example
     listing [logical] [physical] [deck] [expand]
@end example


If the logical argument is given, the listing is with all continuation
lines collapsed into one line, and if the physical argument is given the
lines are printed out as they were found in the file.  The default is
logical.  A deck listing is just like the physical listing, except
without the line numbers it recreates the input file verbatim (except
that it does not preserve case).  If the word expand is present, the
circuit is printed with all subcircuits expanded.



@node  Load, Op, Listing, Commands
@subsection  Load:  Load rawfile data

 General Form:

@example
     load [filename] ...
@end example


Loads either binary or ascii format rawfile data from the files named.
The default filename is rawspice.raw, or the argument to the -r flag if
there was one.



@node  Op, Plot, Load, Commands
@subsection  Op*: Perform an operating point analysis

 General Form:

@example
     op
@end example


Do an operating point analysis.  See the previous sections of this
manual for more details.



@node  Plot, Print, Op, Commands
@subsection  Plot: Plot values on the display

 General Form:

@example
     plot exprs [ylimit ylo yhi] [xlimit xlo xhi] [xindices xilo xihi]
    [xcompress comp] [xdelta xdel] [ydelta ydel] [xlog] [ylog] [loglog]
    [vs xname] [xlabel word] [ylabel word] [title word] [samep]
    [linear]
@end example



Plot the given exprs on the screen (if you are on a graphics terminal).
The xlimit and ylimit arguments determine the high and low x- and
y-limits of the axes, respectively.  The xindices arguments determine
what range of points are to be plotted - everything between the xilo'th
point and the xihi'th point is plotted.  The xcompress argument
specifies that only one out of every comp points should be plotted.  If
an xdelta or a ydelta parameter is present, it specifies the spacing
between grid lines on the X- and Y-axis.  These parameter names may be
abbreviated to xl, yl, xind, xcomp, xdel, and ydel respectively.

The xname argument is an expression to use as the scale on the
x-axis. If xlog or ylog are present then the X or Y scale, respectively,
is logarithmic (loglog is the same as specifying both).  The xlabel and
ylabel arguments cause the specified labels to be used for the X and Y
axes, respectively.

If samep is given, the values of the other parameters (other than xname)
from the previous plot, hardcopy, or asciiplot command is used unless
re-defined on the command line.

The title argument is used in the place of the plot name at the bottom
of the graph.

The linear keyword is used to override a default logscale plot (as in
the output for an AC analysis).

Finally, the keyword polar to generate a polar plot.  To produce a smith
plot, use the keyword smith.  Note that the data is transformed, so for
smith plots you will see the data transformed by the function
(x-1)/(x+1).  To produce a polar plot with a smith grid but without
performing the smith transform, use the keyword smithgrid.


@node  Print, Quit, Plot, Commands
@subsection  Print:  Print values

 General Form:

@example
     print [col] [line] expr ...
@end example


Prints the vector described by the expression expr.  If the col argument
is present, print the vectors named side by side.  If line is given, the
vectors are printed horizontally.  col is the default, unless all the
vectors named have a length of one, in which case line is the default.
The options width, length, and nobreak are effective for this command
(see asciiplot).  If the expression is all, all of the vectors available
are printed.  Thus print col all > file prints everything in the file in
SPICE2 format.  The scale vector (time, frequency) is always in the
first column unless the variable noprintscale is true.



@node  Quit, Rehash, Print, Commands
@subsection  Quit:  Leave Ngspice or Nutmeg

 General Form:

@example
     quit
@end example


Quit nutmeg or ngspice.



@node  Rehash, Reset, Quit, Commands
@subsection  Rehash: Reset internal hash tables

 General Form:

@example
     rehash
@end example


Recalculate the internal hash tables used when looking up UNIX commands,
and make all UNIX commands in the user's PATH available for command
completion.  This is useless unless you have set unixcom first (see
above).



@node  Reset, Reshape, Rehash, Commands
@subsection  Reset*: Reset an analysis

 General Form:

@example
     reset
@end example


Throw out any intermediate data in the circuit (e.g, after a breakpoint
or after one or more analyses have been done already), and re-parse the
input file.  The circuit can then be re-run from it's initial state,
overriding the affect of any set or alter commands.  In Spice-3e and
earlier versions this was done automatically by the run command.



@node  Reshape, Resume, Reset, Commands
@subsection  Reshape: Alter the dimensionality or dimensions  of
 a vector

 General Form:

@example
     reshape vector vector ...
     or
     reshape vector vector ...  [ dimension, dimension, ...  ]
     or
     reshape vector vector ... [ dimension ][ dimension ] ...
@end example


This command changes the dimensions of a vector or a set of vectors.
The final dimension may be left off and it will be filled in
automatically.  If no dimensions are specified, then the dimensions of
the first vector are copied to the other vectors.  An error message of
the form 'dimensions of x were inconsistent' can be ignored.



@node  Resume, Rspice, Reshape, Commands
@subsection  Resume*: Continue a simulation after a stop

 General Form:

@example
     resume
@end example


Resume a simulation after a stop or interruption (control-C).



@node  Rspice, Run, Resume, Commands
@subsection  Rspice:  Remote ngspice submission

 General Form:

@example
     rspice input file
@end example


Runs a NGSPICE remotely taking the input file as a NGSPICE input file,
or the current circuit if no argument is given.  Nutmeg or Ngspice waits
for the job to complete, and passes output from the remote job to the
user's standard output.  When the job is finished the data is loaded in
as with aspice.  If the variable rhost is set, nutmeg connects to this
host instead of the default remote Ngspice server machine.  This command
uses the "rsh" command and thereby requires authentication via a
".rhosts" file or other equivalent method.  Note that "rsh" refers to
the "remote shell" program, which may be "remsh" on your system; to
override the default name of "rsh", set the variable remote_shell.  If
the variable rprogram is set, then rspice uses this as the pathname to
the program to run on the remote system.

Note: rspice will not acknowledge elements that have been changed via
the "alter" or "altermod" commands.



@node  Run, Rusage, Rspice, Commands
@subsection  Run*: Run analysis from the input file

 General Form:

@example
     run [rawfile]
@end example


Run the simulation as specified in the input file.  If there were any of
the control lines .ac, .op, .tran, or .dc, they are executed.  The
output is put in rawfile if it was given, in addition to being available
interactively.  In Spice-3e and earlier versions, the input file would
be re-read and any affects of the set or alter commands would be
reversed.  This is no longer the affect.



@node  Rusage, Save, Run, Commands
@subsection  Rusage: Resource usage

 General Form:

@example
     rusage [resource ...]
@end example


Print resource usage statistics.  If any resources are given, just print
the usage of that resource.  Most resources require that a circuit be
loaded.  Currently valid resources are:

 elapsed           The amount of  time  elapsed  since  the  last  rusage
                   elapsed call.
 faults            Number of page faults and context switches (BSD only).
 space             Data space used.
 time              CPU time used so far.

 temp              Operating temperature.
 tnom              Temperature at which device parameters were measured.
 equations         Circuit Equations

 time              Total Analysis Time
 totiter           Total iterations
 accept            Accepted timepoints
 rejected          Rejected timepoints

 loadtime          Time spent loading the circuit matrix and RHS.
 reordertime       Matrix reordering time
 lutime            L-U decomposition time
 solvetime         Matrix solve time

 trantime          Transient analysis time
 tranpoints        Transient timepoints
 traniter          Transient iterations
 trancuriters      Transient iterations for the last time point*
 tranlutime        Transient L-U decomposition time
 transolvetime     Transient matrix solve time

 everything        All of the above.

 * listed incorrectly as "Transient iterations per point".



@node  Save, Sens, Rusage, Commands
@subsection  Save*:  Save a set of outputs

 General Form:

@example
     save [all | allv | alli | output ...]
     .save [all | allv | alli | output ...]
@end example


Save a set of outputs, discarding the rest.  If a node has been
mentioned in a save command, it appears in the working plot after a run
has completed, or in the rawfile if ngspice is run in batch mode.  If a
node is traced or plotted (see below) it is also saved.  For backward
compatibility, if there are no save commands given, all outputs are
saved.

When the keyword "all" or the keyword "allv", appears in the save command, 
all node voltages, voltage source currents and inductor currents are saved 
in addition to any other values listed. If the keyword "alli" appears in 
the save command, all devices currents are saved.

Note: the current implementation saves only the currents of devices which
      have internal nodes, i.e. MOSFETs with non zero RD and RS; BJTs with
      non-zero RC, RB and RE; DIODEs with non-zero RS; etc. Resistor and
      capacitor currents are not saved with this option. These deficiencies
      will be addressed in a later revision. 

@node  Sens, Set, Save, Commands
@subsection  Sens*:  Run a sensitivity analysis

 General Form:

@example
     sens output_variable
     sens output_variable ac ( DEC | OCT | LIN ) N Fstart Fstop
@end example


Perform a Sensitivity analysis.  output_variable is either a node
voltage (ex. "v(1)" or "v(A,out)") or a current through a voltage source
(ex. "i(vtest)").  The first form calculates DC sensitivities, the
second form calculates AC sensitivies.  The output values are in
dimensions of change in output per unit change of input (as opposed to
percent change in output or per percent change of input).



@node  Set, Setcirc, Sens, Commands
@subsection  Set:  Set the value of a variable

 General Form:

@example
     set [word]
     set [word = value] ...
@end example


Set the value of word to be value, if it is present.  You can set any
word to be any value, numeric or string.  If no value is given then the
value is the boolean 'true'.


The value of word may be inserted into a command by writing $word.  If a
variable is set to a list of values that are enclosed in parentheses
(which must be separated from their values by white space), the value of
the variable is the list.

The variables used by nutmeg are listed in the  following section.


@node  Setcirc, Setplot, Set, Commands
@subsection  Setcirc*: Change the current circuit

 General Form:

@example
     setcirc [circuit name]
@end example


The current circuit is the one that is used for the simulation commands
below.  When a circuit is loaded with the source command (see below) it
becomes the current circuit.



@node  Setplot, Settype, Setcirc, Commands
@subsection  Setplot:  Switch the current set of vectors

 General Form:

@example
     setplot [plotname]
@end example


Set the current plot to the plot with the given name, or if no name is
given, prompt the user with a menu. (Note that the plots are named as
they are loaded, with names like tran1 or op2.  These names are shown by
the setplot and display commands and are used by diff, below.)  If the
"New plot" item is selected, the current plot becomes one with no
vectors defined.

Note that here the word "plot" refers to a group of vectors that are the
result of one NGSPICE run.  When more than one file is loaded in, or more
than one plot is present in one file, nutmeg keeps them separate and
only shows you the vectors in the current plot.



@node  Settype, Shell, Setplot, Commands
@subsection  Settype:  Set the type of a vector

 General Form:

@example
     settype type vector ...
@end example


Change the type of the named vectors to type.  Type names can be found
in the manual page for sconvert.



@node  Shell, Shift, Settype, Commands
@subsection  Shell:  Call the command interpreter

 General Form:

@example
     shell [ command ]
@end example


Call the operating system's command interpreter; execute the specified
command or call for interactive use.



@node  Shift, Show, Shell, Commands
@subsection  Shift:  Alter a list variable

 General Form:

@example
     shift [varname] [number]
@end example


If varname is the name of a list variable, it is shifted to the left by
number elements (i.e, the number leftmost elements are removed).  The
default varname is argv, and the default number is 1.



@node  Show, Showmod, Shift, Commands
@subsection  Show*: List device state

 General Form:

@example
     show devices [ : parameters ] , ...
@end example


The show command prints out tables summarizing the operating condition
of selected devices (much like the spice2 operation point summary).  If
device is missing, a default set of devices are listed, if device is a
single letter, devices of that type are listed; if device is a
subcircuit name (beginning and ending in ":") only devices in that
subcircuit are shown (end the name in a double-":" to get devices within
sub-subcircuits recursively).  The second and third forms may be
combined ("letter:subcircuit:") or "letter:subcircuit::") to select a
specific type of device from a subcircuit.  A device's full name may be
specified to list only that device.  Finally, devices may be selected by
model by using the form "#modelname" or ":subcircuit#modelname" or
"letter:subcircuit#modelname".

If no parameters are specified, the values for a standard set of
parameters are listed.  If the list of parameters contains a "+", the
default set of parameters is listed along with any other specified
parameters.

For both devices and parameters, the word "all" has the obvious meaning.
Note: there must be spaces separating the ":" that divides the device
list from the parameter list.



@node  Showmod, Source, Show, Commands
@subsection  Showmod*: List model parameter values

 General Form:

@example
     showmod models [ : parameters ] , ...
@end example


The showmod command operates like the show command (above) but prints
out model parameter values.  The applicable forms for models are a
single letter specifying the device type letter, "letter:subckt:",
"modelname", ":subckt:modelname", or "letter:subcircuit:modelname".



@node  Source, Status, Showmod, Commands
@subsection  Source:  Read a Ngspice input file

 General Form:

@example
     source file
@end example


For Ngspice: Read the Ngspice input file file.  Nutmeg and Ngspice commands
may be included in the file, and must be enclosed between the lines
.control and .endc.  These commands are executed immediately after the
circuit is loaded, so a control line of ac ...  works the same as the
corresponding .ac card.  The first line in any input file is considered
a title line and not parsed but kept as the name of the circuit.  The
exception to this rule is the file .spiceinit.  Thus, a Ngspice command
script must begin with a blank line and then with a acters *# is
considered a control line.  This makes it possible to imbed commands in
Ngspice input files that are ignored by earlier versions of Spice2

For Nutmeg: Reads commands from the file filename.  Lines beginning with
the character * are considered comments and ignored.



@node  Status, Step, Source, Commands
@subsection  Status*: Display breakpoint information

 General Form:

@example
     status
@end example


Display all of the traces and breakpoints currently in effect.



@node  Step, Stop, Status, Commands
@subsection  Step*:  Run a fixed number of timepoints

 General Form:

@example
     step [number]
@end example


Iterate number times, or once, and then stop.



@node  Stop, Tf, Step, Commands
@subsection  Stop*:  Set a breakpoint

 General Form:

@example
     stop [ after n] [ when value cond value ] ...
@end example


Set a breakpoint.  The argument after n means stop after n iteration
number n, and the argument when value cond value means stop when the
first value is in the given relation with the second value, the possible
relations being

@example
     eq   or   =    equal to
     ne   or   <>   not equal to
     gt   or   >    greater than
     lt   or   <    less than
     ge   or   >=   greater than or equal to
     le   or   <=   less than or equal to
@end example

IO redirection is disabled for the stop command, since the relational
operations conflict with it (it doesn't produce any output anyway).  The
values above may be node names in the running circuit, or real values.
If more than one condition is given, e.g.  stop after 4 when @math{v(1) > 4}
when @math{v(2) < 2}, the conjunction of the conditions is implied.

@subsection  Sysinfo:  Print system information

 General Form:

@example
     sysinfo
@end example


The command prints system information useful for sending bug report
to developers.  Information consists of:

@itemize @bullet
@item Name of the operating system,
@item Name of the node,
@item Current release of the operating system,
@item Current version of this release,
@item Name of hardware type.
@end itemize

The example below shows the use of this command.

@example
ngspice 1 -> sysinfo
Linux janus.wayout.net 2.4.20 #1 SMP Tue Jun 10 18:58:26 CEST 2003 i686 
ngspice 2 -> 
@end example

@quotation Note
This command may not be available on your environment, if
it is not available, please send analogous information when submitting
bug reports. 
@end quotation

@node  Tf, Trace, Stop, Commands
@subsection  Tf*: Run a Transfer Function analysis

 General Form:

@example
     tf output_node input_source
@end example


The tf command performs a transfer function analysis, returning the
transfer function (output/input), output resistance, and input
resistance between the given output node and the given input source.
The analysis assumes a small-signal DC (slowly varying) input.



@node  Trace, Tran, Tf, Commands
@subsection  Trace*: Trace nodes

 General Form:

@example
     trace [ node ...]
@end example


For every step of an analysis, the value of the node is printed.
Several traces may be active at once.  Tracing is not applicable for all
analyses.  To remove a trace, use the delete command.



@node  Tran, Transpose, Trace, Commands
@subsection  Tran*: Perform a transient analysis

 General Form:

@example
     tran Tstep Tstop [ Tstart [ Tmax ] ] [ UIC ]
@end example


Perform a transient analysis.  See the previous sections of this manual
for more details.



@node  Transpose, Unalias, Tran, Commands
@subsection  Transpose: Swap the elements in a multi-dimensional data set

 General Form:

@example
     transpose vector vector ...
@end example


This command transposes a multidimensional vector.  No analysis in
Ngspice produces multidimensional vectors, although the DC transfer curve
may be run with two varying sources.  You must use the "reshape" command
to reform the one-dimensional vectors into two dimensional vectors.  In
addition, the default scale is incorrect for plotting.  You must plot
versus the vector corresponding to the second source, but you must also
refer only to the first segment of this second source vector.  For
example (circuit to produce the transfer characteristic of a MOS
transistor):

@example
     ngspice > dc vgg 0 5 1 vdd 0 5 1
     ngspice > plot i(vdd)
     ngspice > reshape all [6,6]
     ngspice > transpose i(vdd) v(drain)
     ngspice > plot i(vdd) vs v(drain)[0]
@end example


@node  Unalias, Undefine, Transpose, Commands
@subsection  Unalias:  Retract an alias

 General Form:

@example
     unalias [word ...]
@end example


Removes any aliases present for the words.



@node  Undefine, Unset, Unalias, Commands
@subsection  Undefine:  Retract a definition

 General Form:

@example
     undefine function
@end example


Definitions for the named user-defined functions are deleted.



@node  Unset, Version, Undefine, Commands
@subsection  Unset:  Clear a variable

 General Form:

@example
     unset [word ...]
@end example


Clear the value of the specified variable(s) (word).



@node  Version, Where, Unset, Commands
@subsection  Version:  Print the version of ngspice

 General Form:

@example
     version [-s | -f | <version id>]
@end example


Print out the version of @emph{nutmeg} that is running, if invoked without argument
or with @code{-s} or @code{-f}. If the argument is a  @code{<version id>} (any string different
from  @code{-s} or @code{-f} is considered a  @code{<version id>} ), the command checks to make
sure that the arguments match the current version of NGSPICE.  
(This is mainly used as a @code{Command:} line in rawfiles.)


@emph{Options description}
@itemize @bullet
@item No option: The output of the command is the message you can see when running NGSPICE 
                 from the command line, no more no less.
@item @code{-s}(hort):  A shorter version of the message you see when calling NGSPICE from the 
                       command line. 
@item @code{-f}(ull):   You may want to use this option if you want to know what extensions
                        are included into the simulator and what compilation switches are
			active. A list of compilation options and included extensions is
	                appended to the normal (not short) message. May be useful when sending 
	                bug reports.  
@end itemize

The following example shows what the command returns is some situations:

@example
ngspice 10 -> version
******
** ngspice-15 : Circuit level simulation program
** The U. C. Berkeley CAD Group
** Copyright 1985-1994, Regents of the University of California.
** Please submit bug-reports to: ngspice-devel@@lists.sourceforge.net
** Creation Date: Sun Aug 24 00:35:57 CEST 2003
******
ngspice 11 -> version 14 
Note: rawfile is version 14 (current version is 15)
ngspice 12 -> version 15
ngspice 13 -> 
@end example

@strong{Note for developers:} The option listing returned when @code{version} is called with the 
@code{-f} option is built at compile time using @code{#ifdef} blocks. When new compile switch are
added, if you want them to appear on the list, you have to modify the code in @file{misccoms.c}.

@node  Where, Write, Version, Commands
@subsection  Where:  Identify troublesome node or device

 General Form:

@example
     where
@end example


When performing a transient or operating point analysis, the name of the
last node or device to cause non-convergence is saved.  The where
command prints out this information so that you can examine the circuit
and either correct the problem or make a bug report.  You may do this
either in the middle of a run or after the simulator has given up on the
analysis.  For transient simulation, the iplot command can be used to
monitor the progress of the analysis.  When the analysis slows down
severly or hangs, interrupt the simulator (with control-C) and issue the
where command.  Note that only one node or device is printed; there may
be problems with more than one node.



@node  Write, Xgraph, Where, Commands
@subsection  Write: Write data to a file

 General Form:

@example
     write [file] [exprs]
@end example


Writes out the expressions to file.

First vectors are grouped together by plots, and written out as such
(i.e, if the expression list contained three vectors from one plot and
two from another, then two plots are written, one with three vectors and
one with two).  Additionally, if the scale for a vector isn't present,
it is automatically written out as well.

The default format is ascii, but this can be changed with the set
filetype command.  The default filename is rawspice.raw, or the argument
to the -r flag on the command line, if there was one, and the default
expression list is all.



@node Xgraph, While - End, Write, Commands
@subsection Xgraph: use the xgraph(1) program for plotting.

 General Form:

@example
     xgraph file [exprs] [plot options]
@end example


The ngspice/nutmeg xgraph command plots data like the plot command but
via xgraph, a popular X11 plotting program.

If file is either "temp" or "tmp" a temporary file is used to hold the
data while being plotted.  For available plot options, see the plot
command.  All options except for polar or smith plots are supported.



@section  Control Structures



@node  While - End, Repeat - End, Xgraph, Commands
@subsection  While - End

 General Form:

@example
     while condition
       statement
       ...
     end
@end example


While condition, an arbitrary algebraic expression, is true, execute the
statements.



@node  Repeat - End, Dowhile - End, While - End, Commands
@subsection  Repeat - End

 General Form:

@example
     repeat [number]
       statement
       ...
     end
@end example


Execute the statements number times, or forever if no argument is given.



@node  Dowhile - End, Foreach - End, Repeat - End, Commands
@subsection  Dowhile - End

 General Form:

@example
     dowhile condition
       statement
       ...
     end
@end example


The same as while, except that the condition is tested after the
statements are executed.



@node  Foreach - End, If - Then - Else, Dowhile - End, Commands
@subsection  Foreach - End

 General Form:

@example
     foreach var value ...
       statement
       ...
     end
@end example


The statements are executed once for each of the values, each time with
the variable var set to the current one.  (var can be accessed by the
$var notation - see below).



@node  If - Then - Else, Label, Foreach - End, Commands
@subsection  If - Then - Else

 General Form:

@example
     if condition
       statement
       ...
     else
       statement
       ...
     end
@end example


If the condition is non-zero then the first set of statements are
executed, otherwise the second set.  The else and the second set of
statements may be omitted.



@node  Label, Goto, If - Then - Else, Commands
@subsection  Label

 General Form:

@example
     label word
@end example


If a statement of the form goto word is encountered, control is
transferred to this point, otherwise this is a no-op.



@node  Goto, Continue, Label, Commands
@subsection  Goto

 General Form:

@example
     goto word
@end example


If a statement of the form label word is present in the block or an
enclosing block, control is transferred there.  Note that if the label
is at the top level, it must be before the goto statement (i.e, a
forward goto may occur only within a block).



@node  Continue, Break, Goto, Commands
@subsection  Continue
 General Form:

@example
     continue
@end example


If there is a while, dowhile, or foreach block enclosing this statement,
control passes to the test, or in the case of foreach, the next value is
taken.  Otherwise an error results.



@node Break,  , Continue, Commands
@subsection Break

 General Form:

@example
     break
@end example


If there is a while, dowhile, or foreach block enclosing this statement,
control passes out of the block.  Otherwise an error results.

Of course, control structures may be nested.  When a block is entered
and the input is the terminal, the prompt becomes a number of >'s
corresponding to the number of blocks the user has entered.  The current
control structures may be examined with the debugging command cdump.


@node Variables, Bugs, Commands, Interactive Interpreter
@section  Variables


The operation of both Nutmeg and Ngspice may be affected by setting
variables with the "set" command.  In addition to the variables
mentioned below, the set command in Ngspice also affect the behaviour of
the simulator via the options previously described under the section on
".OPTIONS".

The variables meaningful to nutmeg which may be altered by the set
command are:

@vtable @code
@item diff_abstol

The absolute tolerance used by the diff command.  appendwrite Append to
the file when a write command is is sued, if one already exists.

@item colorN

These variables determine the colors used, if X is being run on a color
display.  N may be between 0 and 15.  Color 0 is the background, color 1
is the grid and text color, and colors 2 through 15 are used in order
for vectors plot ted.  The value of the color variables should be names
of colors, which may be found in the file /usr/lib/rgb.txt.

@item combplot

Plot vectors by drawing a vertical line from each point to the X-axis,
as opposed to joining the points.  Note that this option is subsumed in
the plottype option, below.

@item cpdebug

Print cshpar debugging information (must be com plied with the -DCPDEBUG
flag).  Unsupported in the current release.


@item debug

If set then a lot of debugging information is printed (must be compiled
with the -DFTEDEBUG flag).  Unsupported in the current release.

@item device

The name (@code{/dev/tty??}) of the graphics device.  If this variable
isn't set then the user's terminal is used.  To do plotting on another
monitor you probably have to set both the device and term variables.
(If device is set to the name of a file, nutmeg dumps the graphics
control codes into this file -- this is useful for saving plots.)

@item echo

Print out each command before it is executed.

@item filetype

This can be either ascii or binary, and determines what format are.  The
default is ascii.


@item  fourgridsize

How many points to use for interpolating into when doing fourier
analysis.

@item  gridsize

If this variable is set to an integer, this number is used as the number
of equally spaced points to use for the Y axis when plotting.  Otherwise
the current scale is used (which may not have equally spaced points).
If the current scale isn't strictly monotonic, then this option has no
effect.

@item  hcopydev

If this is set, when the hardcopy command is run the resulting file is
automatically printed on the printer named hcopydev with the command
@code{lpr -Phcopydev -g file}.


@item  hcopyfont

This variable specifies the font name for hardcopy output plots.  The
value is device dependent.

@item  hcopyfontsize

This is a scaling factor for the font used in hardcopy plots.

@item  hcopydevtype

This variable specifies the type of the printer output to use in the
hardcopy command.  If hcopydevtype is not set, plot (5) format is
assumed.  The standard distribution currently recognizes postscript as
an alternative output for mat.  When used in conjunction with hcopydev,
hcopydevtype should specify a format supported by the printer.

@item  height

The length of the page for asciiplot and print col.

@item  history

The number of events to save in the his tory list.

@item  lprplot5

This is a printf(3s) style format string used to specify the command to
use for sending plot(5)-style plots to a printer or plotter.  The first
parameter sup plied is the printer name, the second parameter supplied
is a file name containing the plot.  Both parameters are strings.  It
is trivial to cause Ngspice to abort by supplying a unreasonable format
string.

@item  lprps

This is a printf(3s) style format string used to specify the command to
use for sending PostScript plots to a printer or plotter.  The first
parameter supplied is the printer name, the second parameter supplied
is a file name containing the plot.  Both parameters are strings.  It is
trivial to cause Ngspice to abort by supplying a unreasonable format
string.

@item  nfreqs

The number of frequencies to compute in the fourier command. (Defaults
to 10.)

@item  nobreak

Don't have asciiplot and print col break between pages.



@item noasciiplotvalue

Don't print the first vector plotted to the left when doing an
asciiplot.

@item noclobber

Don't overwrite existing files when do ing IO redirection.

@item noglob

Don't expand the global characters `*', `?', `[', and `]'.  This is the
default.

@item nogrid

Don't plot a grid when graphing curves (but do label the axes).

@item nomoremode

If nomoremode is not set, whenever a large amount of data is being
printed to the screen (e.g, the print or asciiplot commands), the output
is stopped every screenful and continues when a carriage return is
typed.  If nomoremode is set then data scrolls off the screen without
check.

@item nonomatch

If noglob is unset and a global expression cannot be matched, use the
global characters literally instead of complaining.

@item nosort

Don't have display sort the variable names.

@item noprintscale

Don't print the scale in the leftmost column when a print col command is
given.

@item numdgt

The number of digits to print when printing tables of data (fourier,
print col).  The default precision is 6 digits.  On the VAX,
approximately 16 decimal digits are avail able using double precision,
so numdgt should not be more than 16.  If the number is negative, one
fewer digit is printed to ensure constant widths in tables.

@item plottype

This should be one of normal, comb, or point:chars.  normal, the
default, causes points to be plotted as parts of connected lines.  comb
causes a comb plot to be done (see the description of the combplot 
variable above).  point causes each point to be plotted separately - the
chars are a list of characters that are used for each vector plotted.
If they are omitted then a de fault set is used.

@item polydegree

The degree of the polynomial that the plot command should fit to the
data.  If polydegree is N, then nutmeg fits a degree N polynomial to
every set of N points and draw 10 intermediate points in between each
end point.  If the points aren't monotonic, then it tries rotating the
curve and reducing the degree until a fit is achieved.

@item polysteps

The number of points to interpolate between every pair of points
available when doing curve fitting.  The default is 10.

@item program

The name of the current program (argv[0]).

@item prompt

The prompt, with the character `!' replaced by the current event number.

@item rawfile

The default name for rawfiles created.

@item diff_reltol

The relative tolerance used by the diff command.

@item remote_shell

Overrides the name used for generating rspice runs (default is
"rsh").

@item rhost

The machine to use for remote NGSPICE runs, in stead of the default one
(see the description of the rspice command, below).

@item rprogram

The name of the remote program to use in the rspice command.

@item slowplot

Stop between each graph plotted and wait for the user to type return
before continuing.

@item sourcepath

A list of the directories to search when a source command is given.  The
default is the current directory and the standard ngspice library
(/usr/local/lib/ngspice, or whatever LIBPATH is #defined to in the Ngspice
source.

@item spicepath

The program to use for the aspice command.  The default is
/cad/bin/spice.

@item term

The mfb name of the current terminal.

@item units

If this is degrees, then all the trig functions will use degrees instead
of radians.

@item unixcom

If a command isn't defined, try to execute it as a UNIX command.
Setting this option has the effect of giving a rehash command, below.
This is useful for people who want to use nutmeg as a login shell.

@item verbose

Be verbose.  This is midway between echo and de bug / cpdebug.

@item diff _vntol

The absolute voltage tolerance used by the diff command.

@item width

The width of the page for asciiplot and print col.

@item x11lineararcs

Some X11 implementations have poor arc drawing.  If you set this option,
Ngspice will plot using an approximation to the curve using straight
lines.

@item xbrushheight

The height of the brush to use if X is being run.

@item xbrushwidth

The width of the brush to use if X is being run.

@item xfont

The name of the X font to use when plotting data and entering labels.
The plot may not look good if this is a variable-width font.

@end vtable

There are several set variables that Ngspice uses but Nutmeg does
not. They are:

@vtable @code

@item editor

The editor to use for the edit command.

@item modelcard

The name of the model card (normally

@item noaskquit

Do not check to make sure that there are no circuits suspended and no
plots un saved.  Normally Ngspice warns the user when he tries to quit if
this is the case.

@item nobjthack

Assume that BJTs have 4 nodes.

@item noparse

Don't attempt to parse input files when they are read in (useful for
debugging).  Of course, they cannot be run if they are not parsed.
nosubckt Don't expand subcircuits.

@item renumber

Renumber input lines when an input file has .include's.  subend The card
to end subcircuits (normally

@item subinvoke

The prefix to invoke subcircuits (nor mally x).  substart The card to
begin subcircuits (normally

@end vtable

@section INIT FILES

Ngspice reads some initialization information and paths from a file called
"spinit" or "tclspinit" (the latter if you have compiled tclspice). The init
file is read by ngspice or ngnutmeg as they start. The init script contains
spice commands (interactive commands). The following example show the standard
ngspice init file.

@example
* Standard spice and nutmeg init file
alias exit quit
alias acct rusage all
set x11lineararcs

*unset brief

strcmp __flag $program "ngspice"
if $__flag = 0

*set numparams

* For SPICE2 POLYs, edit the below line to point to the location 
* of your codemode.
 codemodel /usr/local/lib/spice/spice2poly.cm

* The other codemodels
 codemodel /usr/local/lib/spice/analog.cm
 codemodel /usr/local/lib/spice/digital.cm
 codemodel /usr/local/lib/spice/xtradev.cm
 codemodel /usr/local/lib/spice/xtraevt.cm

end
unset __flag
@end example

The spice init file location depends of the operating system you are running 
and the configuration parameters.

The init file is the best place to put commands you always input when the
simulator starts.


@section  MISCELLANEOUS

If there are subcircuits in the input file, Ngspice expands instances of
them.  A subcircuit is delimited by the cards .subckt and .ends, or
whatever the value of the variables substart and subend is,
respectively.  An instance of a subcircuit is created by specifying a
device with type 'x' - the device line is written

@example
     xname node1 node2 ... subcktname
@end example


where the nodes are the node names that replace the formal parameters on
the .subckt line.  All nodes that are not formal parameters are
prepended with the name given to the instance and a ':', as are the
names of the devices in the subcircuit.  If there are several nested
subcircuits, node and device names look like subckt1:subckt2:...:name.
If the variable subinvoke is set, then it is used as the prefix that
specifies instances of subcircuits, instead of 'x'.

Nutmeg occasionally checks to see if it is getting close to running out
of space, and warns the user if this is the case. (This is more likely
to be useful with the NGSPICE front end.)

C-shell type quoting with "" and '', and backquote substitution may be
used.  Within single quotes, no further substitution (like history
substitution) is done, and within double quotes, the words are kept
together but further substitution is done.  Any text between backquotes
is replaced by the result of executing the text as a command to the
shell.

Tenex-style ('set filec' in the 4.3 C-shell) command, filename, and
keyword completion is possible: If EOF (control-D) is typed after the
first character on the line, a list of the commands or possible
arguments is printed (If it is alone on the line it exits nutmeg).  If
escape is typed, then nutmeg tries to complete what the user has already
typed.  To get a list of all commands, the user should type <space> ^D.

The values of variables may be used in commands by writing $varname
where the value of the variable is to appear.  The special variables $$
and $< refer to the process ID of the program and a line of input which
is read from the terminal when the variable is evaluated, respectively.
If a variable has a name of the form $&word, then word is considered a
vector (see above), and its value is taken to be the value of the
variable.  If $foo is a valid variable, and is of type list, then the
expression $foo[low-high] represents a range of elements.  Either the
upper index or the lower may be left out, and the reverse of a list may
be obtained with $foo[len-0].  Also, the notation $?foo evaluates to 1
if the variable foo is defined, 0 otherwise, and $#foo evaluates to the
number of elements in foo if it is a list, 1 if it is a number or
string, and 0 if it is a boolean variable.

History substitutions, similar to C-shell history substitutions, are
also available - see the C-shell manual page for all of the details.

The characters ~, @{, and @} have the same effects as they do in the
C-Shell, i.e., home directory and alternative expansion.  It is possible
to use the wildcard characters *, ?, [, and ] also, but only if you
unset noglob first.  This makes them rather useless for typing algebraic
expressions, so you should set noglob again after you are done with
wildcard expansion.  Note that the pattern [^abc] matchs all characters
except a, b, and c.

IO redirection is available - the symbols >, >>, >&, >>&, and < have the
same effects as in the C-shell.

You may type multiple commands on one line, separated by semicolons.

If you want to use a different mfbcap file than the default (usually
~cad/lib/mfbcap), you have to set the environment variable SPICE_MFBCAP
before you start nutmeg or ngspice.  The -m option and the mfbcap variable
no longer work.

If X is being used, the cursor may be positioned at any point on the
screen when the window is up and characters typed at the keyboard are
added to the window at that point.  The window may then be sent to a
printer using the xpr(1) program.

Nutmeg can be run under VAX/VMS, as well as several other operating
systems.  Some features like command completion, expansion of *, ?, and
[], backquote substitution, the shell command, and so forth do not work.

On some systems you have to respond to the -moreprompt during plot with
a carriage return instead of any key as you can do on UNIX.


@node Bugs,  , Variables, Interactive Interpreter
@section  Bugs

The label entry facilities are primitive.  You must be careful to type
slowly when entering labels -- nutmeg checks for input once every
second, and can get confused if characters arrive faster.

If you redefine colors after creating a plot window with X, and then
cause the window to be redrawn, it does not redraw in the correct
colors.


When defining aliases like

@example
     alias pdb plot db( '!:1' - '!:2' )
@end example

you must be careful to quote the argument list substitutions in this
manner.  If you quote the whole argument it might not work properly.



In a user-defined function, the arguments cannot be part of a name that
uses the plot.vec syntax.  For example:

@example
     define check(v(1)) cos(tran1.v(1))
@end example

does not work.


If you type plot all all, or otherwise use a wildcard reference for one
plot twice in a command, the effect is unpredictable.

The asciiplot command doesn't deal with log scales or the delta
keywords.


Often the names of terminals recognized by MFB are different from those
in /etc/termcap.  Thus you may have to reset your terminal type with the
command

@example
     set term = termname
@end example

where termname is the name in the mfbcap file.

The hardcopy command is useless on VMS and other systems without the
plot command, unless the user has a program that understands plot(5)
format.

Ngspice recognizes all the notations used in SPICE2 .plot cards, and
translates vp(1) into ph(v(1)), and so forth.  However, if there are
spaces in these names it won't work.  Hence v(1, 2) and (-.5, .5) aren't
recognized.

BJTs can have either 3 or 4 nodes, which makes it difficult for the
subcircuit expansion routines to decide what to rename.  If the fourth
parameter has been declared as a model name, then it is assumed that
there are 3 nodes, otherwise it is considered a node.  To disable this,
you can set the variable "nobjthack" which forces BJTs to have 4 nodes
(for the purposes of subcircuit expansion, at least).

The @@name[param] notation might not work with trace, iplot, etc.  yet.

The first line of a command file (except for the .spiceinit file) should
be a comment, otherwise NGSPICE may create an empty circuit.

Files specified on the command line are read before .spiceinit is read.


@node Bibliography, Example Circuits, Interactive Interpreter, Top
@chapter Bibliography


 [1] A. Vladimirescu and S.  Liu, The Simulation of MOS Integrated
Circuits Using SPICE2 ERL Memo No. ERL M80/7, Electronics Research
Laboratory University of California, Berkeley, October 1980

 [2] T. Sakurai and A. R. Newton, A Simple MOSFET Model for Circuit
Analysis and its application to CMOS gate delay analysis and
series-connected MOSFET Structure ERL Memo No. ERL M90/19, Electronics
Research Labora tory, University of California, Berkeley, March 1990

 [3] B. J. Sheu, D. L. Scharfetter, and P.  K.  Ko, SPICE2
Implementation of BSIM ERL Memo No. ERL M85/42, Electronics Research
Labora tory University of California, Berkeley, May 1985

 [4] J. R. Pierret, A MOS Parameter Extraction Program for the BSIM
Model ERL Memo Nos.  ERL M84/99 and M84/100, Electronics Research
Laboratory University of California, Berkeley, November 1984

 [5] Min-Chie Jeng, Design and Modeling of Deep Submicrometer MOSFETSs
ERL Memo Nos. ERL M90/90, Electronics Research Labora tory University of
California, Berkeley, October 1990

 [6] Soyeon Park, Analysis and SPICE implementation of High Temperature
Effects on MOSFET, Master's thesis, University of California, Berkeley,
December 1986.

 [7] Clement Szeto, Simulator of Temperature Effects in MOS FETs
(STEIM), Master's thesis, University of California, Berkeley, May 1988.

 [8] J.S. Roychowdhury and D.O.  Pederson, Efficient Tran sient
Simulation of Lossy Interconnect, Proc. of the 28th ACM/IEEE Design
Automation Confer ence, June 17-21 1991, San Francisco

 [9] A. E. Parker and D. J. Skellern, An Improved FET Model for Computer
Simulators, IEEE Trans CAD, vol. 9, no. 5, pp. 551-553, May 1990.

 [10] R. Saleh and A. Yang, Editors, Simulation and Modeling, IEEE
Circuits and Devices, vol. 8, no. 3, pp.  7-8 and 49, May 1992

 [11] H.Statz et al., GaAs FET Device and Circuit Simulation in SPICE,
IEEE Transactions on Electron Devices, V34, Number 2, February, 1987
pp160-169.
 
 [12] Weidong Liu et al., BSIM3v3.2.2 MOSFET Model Users' Manual,
http://www-device.eecs.berkeley.edu/~bsim3/ftpv322/Mod_doc/V322manu.tar.Z 

 [13] Weidong Lui et al. BSIM3.v3.2.3 MOSFET Model Users' Manual,
http://www-device.eecs.berkeley.edu/~bsim3/ftpv323/Mod_doc/BSIM323_manu.tar
  

@node Example Circuits, Model and Device Parameters, Bibliography, Top
@chapter Example Circuits

@menu
* Differential Pair::           
* MOSFET Characterization::     
* RTL Inverter::                
* Four-Bit Binary Adder::       
* Transmission-Line Inverter::  
@end menu


@node  Differential Pair, MOSFET Characterization, Example Circuits, Example Circuits
@section  Differential Pair


The following deck determines the dc operating point of a simple
differential pair. In addition, the ac small-signal response is computed
over the frequency range 1Hz to 100MEGHz.

@example
SIMPLE DIFFERENTIAL PAIR
VCC  7  0    12
VEE  8  0    -12
VIN  1  0    AC 1
RS1  1  2    1K
RS2  6  0    1K
Q1   3  2  4 MOD1
Q2   5  6  4 MOD1
RC1  7  3    10K
RC2  7  5    10K
RE   4  8    10K
.MODEL MOD1 NPN BF=50 VAF=50 IS=1.E-12 RB=100 CJC=.5PF TF=.6NS
.TF V(5) VIN
.AC DEC 10 1 100MEG
.END
@end example




@node MOSFET Characterization, RTL Inverter, Differential Pair, Example Circuits
@section MOSFET Characterization

The following deck computes the output characteristics of a MOSFET
device over the range 0-10V for VDS and 0-5V for VGS.


@example
MOS OUTPUT CHARACTERISTICS
.OPTIONS NODE NOPAGE
VDS  3  0
VGS  2  0
M1   1  2  0  0 MOD1 L=4U W=6U AD=10P AS=10P
* VIDS MEASURES ID, WE COULD HAVE USED VDS, BUT ID WOULD BE NEGATIVE
VIDS 3  1
.MODEL MOD1 NMOS VTO=-2 NSUB=1.0E15 UO=550
.DC VDS 0 10 .5 VGS 0 5 1
.END
@end example




@node RTL Inverter, Four-Bit Binary Adder, MOSFET Characterization, Example Circuits
@section RTL Inverter


The following deck determines the dc transfer curve and the transient
pulse response of a simple RTL inverter.  The input is a pulse from 0 to
5 Volts with delay, rise, and fall times of 2ns and a pulse width of
30ns.  The transient interval is 0 to 100ns, with printing to be done
every nanosecond.


@example
SIMPLE RTL INVERTER
VCC  4  0    5
VIN  1  0    PULSE 0 5 2NS 2NS 2NS 30NS
RB   1  2    10K
Q1   3  2  0 Q1
RC   3  4    1K
.MODEL Q1 NPN BF 20 RB 100 TF .1NS CJC 2PF
.DC VIN 0 5 0.1
.TRAN 1NS 100NS
.END
@end example



@node Four-Bit Binary Adder, Transmission-Line Inverter, RTL Inverter, Example Circuits
@section Four-Bit Binary Adder


The following deck simulates a four-bit binary adder, using several
subcircuits to describe various pieces of the overall circuit.


@example
ADDER - 4 BIT ALL-NAND-GATE BINARY ADDER

*** SUBCIRCUIT DEFINITIONS
.SUBCKT NAND 1 2 3 4
*   NODES:  INPUT(2), OUTPUT, VCC
Q1        9  5  1 QMOD
D1CLAMP   0  1    DMOD
Q2        9  5  2 QMOD
D2CLAMP   0  2    DMOD
RB        4  5    4K
R1        4  6    1.6K
Q3        6  9  8 QMOD
R2        8  0    1K
RC        4  7    130
Q4        7  6 10 QMOD
DVBEDROP 10  3    DMOD
Q5        3  8  0 QMOD
.ENDS NAND

.SUBCKT ONEBIT 1 2 3 4 5 6
*   NODES:  INPUT(2), CARRY-IN, OUTPUT, CARRY-OUT, VCC
X1   1  2  7  6   NAND
X2   1  7  8  6   NAND
X3   2  7  9  6   NAND
X4   8  9 10  6   NAND
X5   3 10 11  6   NAND
X6   3 11 12  6   NAND
X7  10 11 13  6   NAND
X8  12 13  4  6   NAND
X9  11  7  5  6   NAND
.ENDS ONEBIT

.SUBCKT TWOBIT 1 2 3 4 5 6 7 8 9
*   NODES:  INPUT - BIT0(2) / BIT1(2), OUTPUT - BIT0 / BIT1,
*           CARRY-IN, CARRY-OUT, VCC
X1   1  2  7  5 10  9   ONEBIT
X2   3  4 10  6  8  9   ONEBIT
.ENDS TWOBIT

.SUBCKT FOURBIT 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
*   NODES:  INPUT - BIT0(2) / BIT1(2) / BIT2(2) / BIT3(2),
*           OUTPUT - BIT0 / BIT1 / BIT2 / BIT3, CARRY-IN, CARRY-OUT, VCC
X1   1  2  3  4  9 10 13 16 15   TWOBIT
X2   5  6  7  8 11 12 16 14 15   TWOBIT
.ENDS FOURBIT

*** DEFINE NOMINAL CIRCUIT
.MODEL DMOD D
.MODEL QMOD NPN(BF=75 RB=100 CJE=1PF CJC=3PF)
VCC   99  0   DC 5V
VIN1A  1  0   PULSE(0 3 0 10NS 10NS   10NS   50NS)
VIN1B  2  0   PULSE(0 3 0 10NS 10NS   20NS  100NS)
VIN2A  3  0   PULSE(0 3 0 10NS 10NS   40NS  200NS)
VIN2B  4  0   PULSE(0 3 0 10NS 10NS   80NS  400NS)
VIN3A  5  0   PULSE(0 3 0 10NS 10NS  160NS  800NS)
VIN3B  6  0   PULSE(0 3 0 10NS 10NS  320NS 1600NS)
VIN4A  7  0   PULSE(0 3 0 10NS 10NS  640NS 3200NS)
VIN4B  8  0   PULSE(0 3 0 10NS 10NS 1280NS 6400NS)
X1     1  2  3  4  5  6  7  8  9 10 11 12  0 13 99 FOURBIT
RBIT0  9  0   1K
RBIT1 10  0   1K
RBIT2 11  0   1K
RBIT3 12  0   1K
RCOUT 13  0   1K

*** (FOR THOSE WITH MONEY (AND MEMORY) TO BURN)
.TRAN 1NS 6400NS
.END
@end example




@node Transmission-Line Inverter,  , Four-Bit Binary Adder, Example Circuits
@section Transmission-Line Inverter


The following deck simulates a transmission-line inverter.  Two
transmission-line elements are required since two propagation modes are
excited.  In the case of a coaxial line, the first line (T1) models the
inner conductor with respect to the shield, and the second line (T2)
models the shield with respect to the outside world.


@example
TRANSMISSION-LINE INVERTER
V1   1  0         PULSE(0 1 0 0.1N)
R1   1  2         50
X1   2  0  0  4   TLINE
R2   4  0         50

.SUBCKT TLINE 1 2 3 4
T1   1  2  3  4   Z0=50 TD=1.5NS
T2   2  0  4  0   Z0=100 TD=1NS
.ENDS TLINE

.TRAN 0.1NS 20NS
.END
@end example



@node Model and Device Parameters,  , Example Circuits, Top
@chapter Model and Device Parameters

The following tables summarize the parameters available on each of the
devices and models in (note that for some systems with limited memory,
output parameters are not available).  There are several tables for each
type of device supported by .  Input parameters to instances and models
are parameters that can occur on an instance or model definition line in
the form "keyword=value" where "keyword" is the parameter name as given
in the tables.  Default input parameters (such as the resistance of a
resistor or the capacitance of a capacitor) obviously do not need the
keyword specified.

Output parameters are those additional parameters which are available
for many types of instances for the output of operating point and
debugging information.  These parameters are specified as
"@@device[keyword]" and are available for the most recent point computed
or, if specified in a ".save" statement, for an entire simulation as a
normal output vector.  Thus, to monitor the gate-to-source capacitance
of a MOSFET, a command

@example
   save @@m1[cgs]
@end example

given before a transient simulation causes the specified capacitance
value to be saved at each timepoint, and a subsequent command such as

@example
   plot @@m1[cgs]
@end example

produces the desired plot.  (Note that the show command does not use
this format).

Some variables are listed as both input and output, and their output
simply returns the previously input value, or the default value after
the simulation has been run.  Some parameter are input only because the
output system can not handle variables of the given type yet, or the
need for them as output variables has not been apparent.  Many such
input variables are available as output variables in a different format,
such as the initial condition vectors that can be retrieved as
individual initial condition values.  Finally, internally derived values
are output only and are provided for debugging and operating point
output purposes.

Please note that these tables do not provide the detailed information
available about the parameters provided in the section on each device
and model, but are provided as a quick reference guide.


@menu
* Uniform RC line::             
* Arbitrary Source::            
* Bipolar Junction Transistor::  
* BSIM1 Berkeley Short Channel IGFET Model::  
* BSIM2 Berkeley Short Channel IGFET Model::  
* Fixed capacitor::             
* Current controlled current source::  
* Linear current controlled current source::  
* Current controlled ideal switch::  
* Junction Diode model::        
* Inductor::                    
* Mutual inductors::            
* Independent current source::  
* Junction Field effect transistor::  
* Lossy transmission line::     
* GaAs MESFET model::           
* Level 1 MOSfet model::        
* Level 2 MOSfet model::        
* Level 3 MOSfet model::        
* Level 6 MOSfet model::        
* Simple linear resistor::      
* Ideal voltage controlled switch::  
* Lossless transmission line::  
* Voltage controlled current source::  
* Voltage controlled voltage source::  
* Independent voltage source::  
@end menu


@node Uniform RC line, Arbitrary Source, Model and Device Parameters, Model and Device Parameters
@section URC:  Uniform R.C. line
@example
 
 ------------------------------------------------------------
|          URC - instance parameters (input-output)         |
|-----------------------------------------------------------+
| l                 Length of transmission line             |
| n                 Number of lumps                         |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          URC - instance parameters (output-only)          |
|-----------------------------------------------------------+
| pos_node          Positive node of URC                    |
| neg_node          Negative node of URC                    |
| gnd               Ground node of URC                      |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|            URC - model parameters (input-only)            |
|-----------------------------------------------------------+
| urc               Uniform R.C. line model                 |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           URC - model parameters (input-output)           |
|-----------------------------------------------------------+
| k                 Propagation constant                    |
| fmax              Maximum frequency of interest           |
| rperl             Resistance per unit length              |
| cperl             Capacitance per unit length             |
| isperl            Saturation current per length           |
| rsperl            Diode resistance per length             |
 ------------------------------------------------------------
@end example


@node Arbitrary Source, Bipolar Junction Transistor, Uniform RC line, Model and Device Parameters
@section ASRC:  Arbitrary Source
@example
 
 ------------------------------------------------------------
|          ASRC - instance parameters (input-only)          |
|-----------------------------------------------------------+
| i                 Current source                          |
| v                 Voltage source                          |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          ASRC - instance parameters (output-only)         |
|-----------------------------------------------------------+
| i                 Current through source                  |
| v                 Voltage across source                   |
| pos_node          Positive Node                           |
| neg_node          Negative Node                           |
 ------------------------------------------------------------
@end example

@node Bipolar Junction Transistor, BSIM1 Berkeley Short Channel IGFET Model, Arbitrary Source, Model and Device Parameters
@section BJT:  Bipolar Junction Transistor
 @example

 ------------------------------------------------------------
|           BJT - instance parameters (input-only)          |
|-----------------------------------------------------------+
| ic                Initial condition vector                |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          BJT - instance parameters (input-output)         |
|-----------------------------------------------------------+
| off               Device initially off                    |
| icvbe             Initial B-E voltage                     |
| icvce             Initial C-E voltage                     |
| area              Area factor                             |
| temp              instance temperature                    |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          BJT - instance parameters (output-only)          |
|-----------------------------------------------------------+
| colnode           Number of collector node                |
| basenode          Number of base node                     |
| emitnode          Number of emitter node                  |
| substnode         Number of substrate node                |
 ------------------------------------------------------------
| colprimenode      Internal collector node                 |
| baseprimenode     Internal base node                      |
| emitprimenode     Internal emitter node                   |
| ic                Current at collector node               |
|-----------------------------------------------------------+
  ib                Current at base node
| ie                Emitter current                         |
| is                Substrate current                       |
| vbe               B-E voltage                             |
 ------------------------------------------------------------
| vbc               B-C voltage                             |
| gm                Small signal transconductance           |
| gpi               Small signal input conductance - pi     |
| gmu               Small signal conductance - mu           |
|-----------------------------------------------------------+
| gx                Conductance from base to internal base  |
| go                Small signal output conductance         |
| geqcb             d(Ibe)/d(Vbc)                           |
| gccs              Internal C-S cap. equiv. cond.          |
 ------------------------------------------------------------
| geqbx             Internal C-B-base cap. equiv. cond.     |
| cpi               Internal base to emitter capactance     |
| cmu               Internal base to collector capactiance  |
| cbx               Base to collector capacitance           |
|-----------------------------------------------------------+
| ccs               Collector to substrate capacitance      |
| cqbe              Cap. due to charge storage in B-E jct.  |
| cqbc              Cap. due to charge storage in B-C jct.  |
| cqcs              Cap. due to charge storage in C-S jct.  |
| cqbx              Cap. due to charge storage in B-X jct.  |
|                         continued                |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|     BJT - instance output-only parameters - continued
|-----------------------------------------------------------+
| cexbc             Total Capacitance in B-X junction       |
| qbe               Charge storage B-E junction             |
| qbc               Charge storage B-C junction             |
| qcs               Charge storage C-S junction             |
| qbx               Charge storage B-X junction             |
| p                 Power dissipation                       |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           BJT - model parameters (input-output)           |
|-----------------------------------------------------------+
| npn               NPN type device                         |
| pnp               PNP type device                         |
| is                Saturation Current                      |
| bf                Ideal forward beta                      |
 ------------------------------------------------------------
| nf                Forward emission coefficient            |
| vaf               Forward Early voltage                   |
| va                (null)                                  |
| ikf               Forward beta roll-off corner current    |
|-----------------------------------------------------------+
| ik                (null)                                  |
| ise               B-E leakage saturation current          |
| ne                B-E leakage emission coefficient        |
| br                Ideal reverse beta                      |
 ------------------------------------------------------------
| nr                Reverse emission coefficient            |
| var               Reverse Early voltage                   |
| vb                (null)                                  |
| ikr               reverse beta roll-off corner current    |
|-----------------------------------------------------------+
| isc               B-C leakage saturation current          |
| nc                B-C leakage emission coefficient        |
| rb                Zero bias base resistance               |
| irb               Current for base resistance=(rb+rbm)/2  |
 ------------------------------------------------------------
| rbm               Minimum base resistance                 |
| re                Emitter resistance                      |
| rc                Collector resistance                    |
| cje               Zero bias B-E depletion capacitance     |
|-----------------------------------------------------------+
| vje               B-E built in potential                  |
| pe                (null)                                  |
| mje               B-E junction grading coefficient        |
| me                (null)                                  |
 ------------------------------------------------------------
| tf                Ideal forward transit time              |
| xtf               Coefficient for bias dependence of TF   |
| vtf               Voltage giving VBC dependence of TF     |
| itf               High current dependence of TF           |
|-----------------------------------------------------------+
| ptf               Excess phase                            |
| cjc               Zero bias B-C depletion capacitance     |
| vjc               B-C built in potential                  |
|                         continued                |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|      BJT - model input-output parameters - continued
|-----------------------------------------------------------+
| pc                (null)                                  |
| mjc               B-C junction grading coefficient        |
| mc                (null)                                  |
| xcjc              Fraction of B-C cap to internal base    |
 ------------------------------------------------------------
| tr                Ideal reverse transit time              |
| cjs               Zero bias C-S capacitance               |
| ccs               Zero bias C-S capacitance               |
| vjs               Substrate junction built in potential   |
|-----------------------------------------------------------+
| ps                (null)                                  |
| mjs               Substrate junction grading coefficient  |
| ms                (null)                                  |
| xtb               Forward and reverse beta temp. exp.     |
 ------------------------------------------------------------
| eg                Energy gap for IS temp. dependency      |
| xti               Temp. exponent for IS                   |
| fc                Forward bias junction fit parameter     |
| tnom              Parameter measurement temperature       |
| kf                Flicker Noise Coefficient               |
| af                Flicker Noise Exponent                  |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|            BJT - model parameters (output-only)           |
|-----------------------------------------------------------+
| type              NPN or PNP                              |
| invearlyvoltf     Inverse early voltage:forward           |
| invearlyvoltr     Inverse early voltage:reverse           |
| invrollofff       Inverse roll off - forward              |
 ------------------------------------------------------------
| invrolloffr       Inverse roll off - reverse              |
| collectorconduct  Collector conductance                   |
| emitterconduct    Emitter conductance                     |
| transtimevbcfact  Transit time VBC factor                 |
| excessphasefactor Excess phase fact.                      |
 ------------------------------------------------------------
@end example


@node BSIM1 Berkeley Short Channel IGFET Model, BSIM2 Berkeley Short Channel IGFET Model, Bipolar Junction Transistor, Model and Device Parameters
@section BSIM1:  Berkeley Short Channel IGFET Model
@example
 
 ------------------------------------------------------------
|          BSIM1 - instance parameters (input-only)         |
|-----------------------------------------------------------+
| ic                Vector of DS,GS,BS initial voltages     |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|         BSIM1 - instance parameters (input-output)        |
|-----------------------------------------------------------+
| l                 Length                                  |
| w                 Width                                   |
| ad                Drain area                              |
| as                Source area                             |
 ------------------------------------------------------------
| pd                Drain perimeter                         |
| ps                Source perimeter                        |
| nrd               Number of squares in drain              |
| nrs               Number of squares in source             |
|-----------------------------------------------------------+
| off               Device is initially off                 |
| vds               Initial D-S voltage                     |
| vgs               Initial G-S voltage                     |
| vbs               Initial B-S voltage                     |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           BSIM1 - model parameters (input-only)           |
|-----------------------------------------------------------+
| nmos              Flag to indicate NMOS                   |
| pmos              Flag to indicate PMOS                   |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          BSIM1 - model parameters (input-output)          |
|-----------------------------------------------------------+
| vfb               Flat band voltage                       |
|lvfb               Length dependence of vfb                |
| wvfb              Width dependence of vfb                 |
| phi               Strong inversion surface potential      |
 ------------------------------------------------------------
| lphi              Length dependence of phi                |
| wphi              Width dependence of phi                 |
| k1                Bulk effect coefficient 1               |
| lk1               Length dependence of k1                 |
|-----------------------------------------------------------+
| wk1               Width dependence of k1                  |
| k2                Bulk effect coefficient 2               |
| lk2               Length dependence of k2                 |
| wk2               Width dependence of k2                  |
 ------------------------------------------------------------
| eta               VDS dependence of threshold voltage     |
| leta              Length dependence of eta                |
| weta              Width dependence of eta                 |
| x2e               VBS dependence of eta                   |
| lx2e              Length dependence of x2e                |
|                         continued                |
 ------------------------------------------------------------

 
 ---------------------------------------------------------------------
|          BSIM1 - model input-output parameters - continued         |
|--------------------------------------------------------------------+
|wx2e           Width dependence of x2e                              |
|x3e            VDS dependence of eta                                |
|lx3e           Length dependence of x3e                             |
|wx3e           Width dependence of x3e                              |
 ---------------------------------------------------------------------
|dl             Channel length reduction in um                       |
|dw             Channel width reduction in um                        |
|muz            Zero field mobility at VDS=0 VGS=VTH                 |
|x2mz           VBS dependence of muz                                |
|--------------------------------------------------------------------+
|lx2mz          Length dependence of x2mz                            |
|wx2mz          Width dependence of x2mz                             |
 mus            Mobility at VDS=VDD VGS=VTH, channel length modulation
|lmus           Length dependence of mus                             |
 ---------------------------------------------------------------------
|wmus           Width dependence of mus                              |
|x2ms           VBS dependence of mus                                |
|lx2ms          Length dependence of x2ms                            |
|wx2ms          Width dependence of x2ms                             |
|--------------------------------------------------------------------+
|x3ms           VDS dependence of mus                                |
|lx3ms          Length dependence of x3ms                            |
|wx3ms          Width dependence of x3ms                             |
|u0             VGS dependence of mobility                           |
 ---------------------------------------------------------------------
|lu0            Length dependence of u0                              |
|wu0            Width dependence of u0                               |
|x2u0           VBS dependence of u0                                 |
|lx2u0          Length dependence of x2u0                            |
|--------------------------------------------------------------------+
|wx2u0          Width dependence of x2u0                             |
|u1             VDS dependece of mobility, velocity saturation       |
|lu1            Length dependence of u1                              |
|wu1            Width dependence of u1                               |
 ---------------------------------------------------------------------
|x2u1           VBS dependence of u1                                 |
|lx2u1          Length dependence of x2u1                            |
|wx2u1          Width dependence of x2u1                             |
|x3u1           VDS dependence of u1                                 |
|--------------------------------------------------------------------+
|lx3u1          Length dependence of x3u1                            |
|wx3u1          Width dependence of x3u1                             |
|n0             Subthreshold slope                                   |
 ln0            Length dependence of n0
 ---------------------------------------------------------------------
|wn0            Width dependence of n0                               |
|nb             VBS dependence of subthreshold slope                 |
|lnb            Length dependence of nb                              |
|wnb            Width dependence of nb                               |
|--------------------------------------------------------------------+
|nd             VDS dependence of subthreshold slope                 |
|lnd            Length dependence of nd                              |
|wnd            Width dependence of nd                               |
|                              continued                             |
 ---------------------------------------------------------------------

 
 ---------------------------------------------------------------------------
|          BSIM1 - model input-output parameters - continued            |
|-----------------------------------------------------------------------+
|tox         Gate oxide thickness in um                                 |
|temp        Temperature in degree Celsius                              |
|vdd         Supply voltage to specify mus                              |
|cgso        Gate source overlap capacitance per unit channel width(m)  |
 ------------------------------------------------------------------------
|cgdo        Gate drain overlap capacitance per unit channel width(m)   |
|cgbo        Gate bulk overlap capacitance per unit channel length(m)   |
|xpart       Flag for channel charge partitioning                       |
|rsh         Source drain diffusion sheet resistance in ohm per square  |
|-----------------------------------------------------------------------+
|js          Source drain junction saturation current per unit area     |
|pb          Source drain junction built in potential                   |
|mj          Source drain bottom junction capacitance grading coefficient
|pbsw        Source drain side junction capacitance built in potential  |
 ------------------------------------------------------------------------
|mjsw        Source drain side junction capacitance grading coefficient |
|cj          Source drain bottom junction capacitance per unit area     |
|cjsw        Source drain side junction capacitance per unit area       |
|wdf         Default width of source drain diffusion in um              |
|dell        Length reduction of source drain diffusion                 |
 ------------------------------------------------------------------------
@end example


@node BSIM2 Berkeley Short Channel IGFET Model, Fixed capacitor, BSIM1 Berkeley Short Channel IGFET Model, Model and Device Parameters
@section BSIM2:  Berkeley Short Channel IGFET Model
@example
 
 ------------------------------------------------------------
|          BSIM2 - instance parameters (input-only)         |
|-----------------------------------------------------------+
| ic                Vector of DS,GS,BS initial voltages     |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|         BSIM2 - instance parameters (input-output)        |
|-----------------------------------------------------------+
| l                 Length                                  |
| w                 Width                                   |
| ad                Drain area                              |
| as                Source area                             |
 ------------------------------------------------------------
| pd                Drain perimeter                         |
| ps                Source perimeter                        |
| nrd               Number of squares in drain              |
| nrs               Number of squares in source             |
|-----------------------------------------------------------+
| off               Device is initially off                 |
| vds               Initial D-S voltage                     |
| vgs               Initial G-S voltage                     |
| vbs               Initial B-S voltage                     |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           BSIM2 - model parameters (input-only)           |
|-----------------------------------------------------------+
| nmos              Flag to indicate NMOS                   |
| pmos              Flag to indicate PMOS                   |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          BSIM2 - model parameters (input-output)          |
|-----------------------------------------------------------+
|vfb             Flat band voltage                          |
|lvfb            Length dependence of vfb                   |
|wvfb            Width dependence of vfb                    |
|phi             Strong inversion surface potential         |
 ------------------------------------------------------------
|lphi            Length dependence of phi                   |
|wphi            Width dependence of phi                    |
|k1              Bulk effect coefficient 1                  |
|lk1             Length dependence of k1                    |
|-----------------------------------------------------------+
|wk1             Width dependence of k1                     |
|k2              Bulk effect coefficient 2                  |
|lk2             Length dependence of k2                    |
|wk2             Width dependence of k2                     |
 ------------------------------------------------------------
|eta0            VDS dependence of threshold voltage at VDD=0
|leta0           Length dependence of eta0                  |
|weta0           Width dependence of eta0                   |
|etab            VBS dependence of eta                      |
|-----------------------------------------------------------+
|letab           Length dependence of etab                  |
|wetab           Width dependence of etab                   |
|dl              Channel length reduction in um             |
|dw              Channel width reduction in um              |
 ------------------------------------------------------------
|mu0             Low-field mobility, at VDS=0 VGS=VTH       |
|mu0b            VBS dependence of low-field mobility       |
|lmu0b           Length dependence of mu0b                  |
|wmu0b           Width dependence of mu0b                   |
|-----------------------------------------------------------+
|mus0            Mobility at VDS=VDD VGS=VTH                |
|lmus0           Length dependence of mus0                  |
|wmus0           Width dependence of mus                    |
|musb            VBS dependence of mus                      |
 ------------------------------------------------------------
|lmusb           Length dependence of musb                  |
|wmusb           Width dependence of musb                   |
|mu20            VDS dependence of mu in tanh term          |
|lmu20           Length dependence of mu20                  |
|-----------------------------------------------------------+
|wmu20           Width dependence of mu20                   |
|mu2b            VBS dependence of mu2                      |
|lmu2b           Length dependence of mu2b                  |
|wmu2b           Width dependence of mu2b                   |
 ------------------------------------------------------------
|mu2g            VGS dependence of mu2                      |
|                         continued                |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|     BSIM2 - model input-output parameters - continued
|-----------------------------------------------------------+
| lmu2g             Length dependence of mu2g               |
| wmu2g             Width dependence of mu2g                |
| mu30              VDS dependence of mu in linear term     |
| lmu30             Length dependence of mu30               |
 ------------------------------------------------------------
| wmu30             Width dependence of mu30                |
| mu3b              VBS dependence of mu3                   |
| lmu3b             Length dependence of mu3b               |
| wmu3b             Width dependence of mu3b                |
|-----------------------------------------------------------+
| mu3g              VGS dependence of mu3                   |
| lmu3g             Length dependence of mu3g               |
| wmu3g             Width dependence of mu3g                |
| mu40              VDS dependence of mu in linear term     |
 ------------------------------------------------------------
| lmu40             Length dependence of mu40               |
| wmu40             Width dependence of mu40                |
| mu4b              VBS dependence of mu4                   |
| lmu4b             Length dependence of mu4b               |
|-----------------------------------------------------------+
| wmu4b             Width dependence of mu4b                |
| mu4g              VGS dependence of mu4                   |
| lmu4g             Length dependence of mu4g               |
| wmu4g             Width dependence of mu4g                |
 ------------------------------------------------------------
| ua0               Linear VGS dependence of mobility       |
| lua0              Length dependence of ua0                |
| wua0              Width dependence of ua0                 |
| uab               VBS dependence of ua                    |
|-----------------------------------------------------------+
| luab              Length dependence of uab                |
| wuab              Width dependence of uab                 |
| ub0               Quadratic VGS dependence of mobility    |
| lub0              Length dependence of ub0                |
 ------------------------------------------------------------
| wub0              Width dependence of ub0                 |
| ubb               VBS dependence of ub                    |
| lubb              Length dependence of ubb                |
| wubb              Width dependence of ubb                 |
|-----------------------------------------------------------+
| u10               VDS dependence of mobility              |
| lu10              Length dependence of u10                |
  wu10              Width dependence of u100                |
| u1b               VBS dependence of u1                    |
 ------------------------------------------------------------
| lu1b              Length dependence of u1b                |
| wu1b              Width dependence of u1b                 |
| u1d               VDS dependence of u1                    |
| lu1d              Length dependence of u1d                |
|-----------------------------------------------------------+
| wu1d              Width dependence of u1d                 |
| n0                Subthreshold slope at VDS=0 VBS=0       |
| ln0               Length dependence of n0                 |
|                         continued                         |
 ------------------------------------------------------------

 
 --------------------------------------------------------------
|           BSIM2 - model input-output parameters - continued  |
|--------------------------------------------------------------+
|wn0            Width dependence of n0                         |
|nb             VBS dependence of n                            |
|lnb            Length dependence of nb                        |
|wnb            Width dependence of nb                         |
 --------------------------------------------------------------+
|nd             VDS dependence of n                            |
|lnd            Length dependence of nd                        |
|wnd            Width dependence of nd                         |
|vof0           Threshold voltage offset AT VDS=0 VBS=0        |
|--------------------------------------------------------------+
|lvof0          Length dependence of vof0                      |
|wvof0          Width dependence of vof0                       |
|vofb           VBS dependence of vof                          |
|lvofb          Length dependence of vofb                      |
 --------------------------------------------------------------+
|wvofb          Width dependence of vofb                       |
|vofd           VDS dependence of vof                          |
|lvofd          Length dependence of vofd                      |
|wvofd          Width dependence of vofd                       |
|--------------------------------------------------------------+
|ai0            Pre-factor of hot-electron effect.             |
|lai0           Length dependence of ai0                       |
|wai0           Width dependence of ai0                        |
|aib            VBS dependence of ai                           |
 --------------------------------------------------------------+
|laib           Length dependence of aib                       |
|waib           Width dependence of aib                        |
|bi0            Exponential factor of hot-electron effect.     |
|lbi0           Length dependence of bi0                       |
|--------------------------------------------------------------+
|wbi0           Width dependence of bi0                        |
|bib            VBS dependence of bi                           |
|lbib           Length dependence of bib                       |
|wbib           Width dependence of bib                        |
 --------------------------------------------------------------+
|vghigh         Upper bound of the cubic spline function.      |
|lvghigh        Length dependence of vghigh                    |
|wvghigh        Width dependence of vghigh                     |
|vglow          Lower bound of the cubic spline function.      |
|--------------------------------------------------------------+
|lvglow         Length dependence of vglow                     |
|wvglow         Width dependence of vglow                      |
|tox            Gate oxide thickness in um                     |
|temp           Temperature in degree Celcius                  |
 --------------------------------------------------------------+
|vdd            Maximum Vds                                    |
|vgg            Maximum Vgs                                    |
|vbb            Maximum Vbs                                    |
|cgso           Gate source overlap capacitance per unit       |
|               channel width(m)                               |
|--------------------------------------------------------------+
|cgdo           Gate drain overlap capacitance                 |
|               per unit channel width(m)                      |
|cgbo           Gate bulk overlap capacitance                  |
|               per unit channel length(m)                     |
|xpart          Flag for channel charge partitioning           |
|                               continued                      |
 ---------------------------------------------------------------

 
 ---------------------------------------------------------------
|             BSIM2 - model input-output parameters            |
|--------------------------------------------------------------+
|rsh            Source drain diffusion sheet resistance        |
|               in ohm per square                              |
|js             Source drain junction saturation current       |
|               per unit area                                  |
|pb             Source drain junction built in potential       |
|mj             Source drain bottom junction capacitance       |
|               grading coefficient                            |
 --------------------------------------------------------------+
|pbsw           Source drain side junction capacitance         |
|               built in potential                             |
|mjsw           Source drain side junction capacitance         |
|               grading coefficient                            |
|cj             Source drain bottom junction capacitance       |
|               per unit area                                  |
|cjsw           Source drain side junction capacitance         |
|               per unit area                                  |
|wdf            Default width of source drain diffusion in um  |
|dell           Length reduction of source drain diffusion     |
 ---------------------------------------------------------------
@end example


@node Fixed capacitor, Current controlled current source, BSIM2 Berkeley Short Channel IGFET Model, Model and Device Parameters
@section Capacitor:  Fixed capacitor
@example
 
 ------------------------------------------------------------
|       Capacitor - instance parameters (input-output)      |
|-----------------------------------------------------------+
| capacitance       Device capacitance                      |
| ic                Initial capacitor voltage               |
| w                 Device width                            |
| l                 Device length                           |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|       Capacitor - instance parameters (output-only)       |
|-----------------------------------------------------------+
| i                 Device current                          |
| p                 Instantaneous device power              |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|         Capacitor - model parameters (input-only)         |
|-----------------------------------------------------------+
| c                 Capacitor model                         |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|        Capacitor - model parameters (input-output)        |
|-----------------------------------------------------------+
| cj                Bottom Capacitance per area             |
| cjsw              Sidewall capacitance per meter          |
| defw              Default width                           |
| narrow            width correction factor                 |
 ------------------------------------------------------------
@end example


@node Current controlled current source, Linear current controlled current source, Fixed capacitor, Model and Device Parameters
@section CCCS:  Current controlled current source
@example
 
 ------------------------------------------------------------
|         CCCS - instance parameters (input-output)         |
|-----------------------------------------------------------+
| gain              Gain of source                          |
| control           Name of controlling source              |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          CCCS - instance parameters (output-only)         |
|-----------------------------------------------------------+
| neg_node          Negative node of source                 |
| pos_node          Positive node of source                 |
| i                 CCCS output current                     |
| v                 CCCS voltage at output                  |
| p                 CCCS power                              |
 ------------------------------------------------------------
@end example


@node Linear current controlled current source, Current controlled ideal switch, Current controlled current source, Model and Device Parameters
@section CCVS:  Linear current controlled current source
@example
 
 ------------------------------------------------------------
|         CCVS - instance parameters (input-output)         |
|-----------------------------------------------------------+
| gain              Transresistance (gain)                  |
| control           Controlling voltage source              |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          CCVS - instance parameters (output-only)         |
|-----------------------------------------------------------+
| pos_node          Positive node of source                 |
| neg_node          Negative node of source                 |
| i                 CCVS output current                     |
| v                 CCVS output voltage                     |
| p                 CCVS power                              |
 ------------------------------------------------------------
@end example



@node Current controlled ideal switch, Junction Diode model, Linear current controlled current source, Model and Device Parameters
@section CSwitch:  Current controlled ideal switch
@example
 
 ------------------------------------------------------------
|         CSwitch - instance parameters (input-only)        |
|-----------------------------------------------------------+
| on                Initially closed                        |
| off               Initially open                          |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|        CSwitch - instance parameters (input-output)       |
|-----------------------------------------------------------+
| control           Name of controlling source              |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|        CSwitch - instance parameters (output-only)        |
|-----------------------------------------------------------+
| pos_node          Positive node of switch                 |
| neg_node          Negative node of switch                 |
| i                 Switch current                          |
| p                 Instantaneous power                     |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|         CSwitch - model parameters (input-output)         |
|-----------------------------------------------------------+
| csw               Current controlled switch model         |
| it                Threshold current                       |
| ih                Hysteresis current                      |
| ron               Closed resistance                       |
| roff              Open resistance                         |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          CSwitch - model parameters (output-only)         |
|-----------------------------------------------------------+
| gon               Closed conductance                      |
| goff              Open conductance                        |
 ------------------------------------------------------------
@end example


@node Junction Diode model, Inductor, Current controlled ideal switch, Model and Device Parameters
@section Diode:  Junction Diode model
@example
 
 ------------------------------------------------------------
|         Diode - instance parameters (input-output)        |
|-----------------------------------------------------------+
| off               Initially off                           |
| temp              Instance temperature                    |
| ic                Initial device voltage                  |
| area              Area factor                             |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|         Diode - instance parameters (output-only)         |
|-----------------------------------------------------------+
| vd                Diode voltage                           |
| id                Diode current                           |
| c                 Diode current                           |
| gd                Diode conductance                       |
 ------------------------------------------------------------
| cd                Diode capacitance                       |
| charge            Diode capacitor charge                  |
| capcur            Diode capacitor current                 |
| p                 Diode power                             |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           Diode - model parameters (input-only)           |
|-----------------------------------------------------------+
| d                 Diode model                             |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          Diode - model parameters (input-output)          |
|-----------------------------------------------------------+
| is                Saturation current                      |
| tnom              Parameter measurement temperature       |
| rs                Ohmic resistance                        |
| n                 Emission Coefficient                    |
 ------------------------------------------------------------
| tt                Transit Time                            |
| cjo               Junction capacitance                    |
| cj0               (null)                                  |
| vj                Junction potential                      |
|-----------------------------------------------------------+
| m                 Grading coefficient                     |
| eg                Activation energy                       |
| xti               Saturation current temperature exp.     |
| kf                flicker noise coefficient               |
 ------------------------------------------------------------
| af                flicker noise exponent                  |
| fc                Forward bias junction fit parameter     |
| bv                Reverse breakdown voltage               |
| ibv               Current at reverse breakdown voltage    |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           Diode - model parameters (output-only)          |
|-----------------------------------------------------------+
| cond              Ohmic conductance                       |
 ------------------------------------------------------------
@end example


@node Inductor, Mutual inductors, Junction Diode model, Model and Device Parameters
@section Inductor:  Inductors
@example
 
 ------------------------------------------------------------
|       Inductor - instance parameters (input-output)       |
|-----------------------------------------------------------+
| inductance        Inductance of inductor                  |
| ic                Initial current through inductor        |
 ------------------------------------------------------------

 
 -------------------------------------------------------------
|        Inductor - instance parameters (output-only)        |
|------------------------------------------------------------+
|flux           Flux through inductor                        |
|v              Terminal voltage of inductor                 |
|volt                                                        |
|i              Current through the inductor                 |
|current                                                     |
 p              instantaneous power dissipated by the inductor
|                                                            |
 -------------------------------------------------------------
@end example


@node Mutual inductors, Independent current source, Inductor, Model and Device Parameters
@section mutual:  Mutual inductors
@example
 
 ------------------------------------------------------------
|        mutual - instance parameters (input-output)        |
|-----------------------------------------------------------+
| k                 Mutual inductance                       |
| coefficient       (null)                                  |
| inductor1         First coupled inductor                  |
| inductor2         Second coupled inductor                 |
 ------------------------------------------------------------
@end example


@node Independent current source, Junction Field effect transistor, Mutual inductors, Model and Device Parameters
@section Isource:  Independent current source
@example
 
 ------------------------------------------------------------
|         Isource - instance parameters (input-only)        |
|-----------------------------------------------------------+
| pulse             Pulse description                       |
| sine              Sinusoidal source description           |
| sin               Sinusoidal source description           |
| exp               Exponential source description          |
 ------------------------------------------------------------
| pwl               Piecewise linear description            |
| sffm              single freq. FM description             |
| ac                AC magnitude,phase vector               |
| c                 Current through current source          |
| distof1           f1 input for distortion                 |
| distof2           f2 input for distortion                 |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|        Isource - instance parameters (input-output)       |
|-----------------------------------------------------------+
| dc                DC value of source                      |
| acmag             AC magnitude                            |
| acphase           AC phase                                |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|        Isource - instance parameters (output-only)        |
|-----------------------------------------------------------+
| neg_node          Negative node of source                 |
| pos_node          Positive node of source                 |
  acreal            AC real part
| acimag            AC imaginary part                       |
 ------------------------------------------------------------
| function          Function of the source                  |
| order             Order of the source function            |
| coeffs            Coefficients of the source              |
| v                 Voltage across the supply               |
| p                 Power supplied by the source            |
 ------------------------------------------------------------
@end example


@node Junction Field effect transistor, Lossy transmission line, Independent current source, Model and Device Parameters
@section JFET:  Junction Field effect transistor
@example
 
 ------------------------------------------------------------
|         JFET - instance parameters (input-output)         |
|-----------------------------------------------------------+
| off               Device initially off                    |
| ic                Initial VDS,VGS vector                  |
| area              Area factor                             |
| ic-vds            Initial D-S voltage                     |
| ic-vgs            Initial G-S volrage                     |
| temp              Instance temperature                    |
 ------------------------------------------------------------

 
 ---------------------------------------------------------------
|           JFET - instance parameters (output-only)           |
|--------------------------------------------------------------+
|drain-node       Number of drain node                         |
|gate-node        Number of gate node                          |
|source-node      Number of source node                        |
|drain-prime-node Internal drain node                          |
 ---------------------------------------------------------------
|source-prime-nodeInternal source node                         |
|vgs              Voltage G-S                                  |
|vgd              Voltage G-D                                  |
|ig               Current at gate node                         |
|--------------------------------------------------------------+
|id               Current at drain node                        |
|is               Source current                               |
|igd              Current G-D                                  |
|gm               Transconductance                             |
 ---------------------------------------------------------------
|gds              Conductance D-S                              |
|ggs              Conductance G-S                              |
|ggd              Conductance G-D                              |
|qgs              Charge storage G-S junction                  |
|--------------------------------------------------------------+
|qgd              Charge storage G-D junction                  |
 cqgs             Capacitance due to charge storage G-S junction
|                                                              |
 cqgd             Capacitance due to charge storage G-D junction
|p                Power dissipated by the JFET                 |
 ---------------------------------------------------------------

 
 ------------------------------------------------------------
|           JFET - model parameters (input-output)          |
|-----------------------------------------------------------+
| njf               N type JFET model                       |
| pjf               P type JFET model                       |
| vt0               Threshold voltage                       |
| vto               (null)                                  |
 ------------------------------------------------------------
| beta              Transconductance parameter              |
| lambda            Channel length modulation param.        |
| rd                Drain ohmic resistance                  |
| rs                Source ohmic resistance                 |
| cgs               G-S junction capacitance                |
|                         continued                         |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|      JFET - model input-output parameters - continued
|-----------------------------------------------------------+
| cgd               G-D junction cap                        |
| pb                Gate junction potential                 |
| is                Gate junction saturation current        |
| fc                Forward bias junction fit param.        |
 ------------------------------------------------------------
| b                 Doping tail parameter                   |
| tnom              parameter measurement temperature       |
| kf                Flicker Noise Coefficient               |
| af                Flicker Noise Exponent                  |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           JFET - model parameters (output-only)           |
|-----------------------------------------------------------+
| type              N-type or P-type JFET model             |
| gd                Drain conductance                       |
| gs                Source conductance                      |
 ------------------------------------------------------------
@end example


@node Lossy transmission line, GaAs MESFET model, Junction Field effect transistor, Model and Device Parameters
@section LTRA:  Lossy transmission line
@example
 
 ------------------------------------------------------------
|          LTRA - instance parameters (input-only)          |
|-----------------------------------------------------------+
| ic                Initial condition vector:v1,i1,v2,i2    |
 ------------------------------------------------------------

 ------------------------------------------------------------
|         LTRA - instance parameters (input-output)         |
|-----------------------------------------------------------+
| v1                Initial voltage at end 1                |
| v2                Initial voltage at end 2                |
| i1                Initial current at end 1                |
| i2                Initial current at end 2                |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          LTRA - instance parameters (output-only)         |
|-----------------------------------------------------------+
| pos_node1         Positive node of end 1 of t-line        |
| neg_node1         Negative node of end 1 of t.line        |
| pos_node2         Positive node of end 2 of t-line        |
| neg_node2         Negative node of end 2 of t-line        |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           LTRA - model parameters (input-output)          |
|-----------------------------------------------------------+
|ltra            LTRA model                                 |
|r               Resistance per metre                       |
|l               Inductance per metre                       |
|g               (null)                                     |
 ------------------------------------------------------------
|c               Capacitance per metre                      |
|len             length of line                             |
|nocontrol       No timestep control                        |
|steplimit       always limit timestep to 0.8*(delay of line)
|                         continued                         |
 ------------------------------------------------------------

 ---------------------------------------------------------------------
|                 LTRA - model input-output parameters - continued    |
|---------------------------------------------------------------------+
|nosteplimit    don't always limit timestep to 0.8*(delay of line)    |
|lininterp      use linear interpolation                              |
|quadinterp     use quadratic interpolation                           |
|mixedinterp    use linear interpolation if quadratic results         |
|               look unacceptable                                     | 
 ---------------------------------------------------------------------
|truncnr        use N-R iterations for step calculation in LTRAtrunc  |
|truncdontcut   don't limit timestep to keep impulse response         |
|               calculation errors low                                |
|compactrel     special reltol for straight line checking             |
|compactabs     special abstol for straight line checking             |
 ---------------------------------------------------------------------

 
 ------------------------------------------------------------
|           LTRA - model parameters (output-only)           |
|-----------------------------------------------------------+
| rel               Rel. rate of change of deriv. for bkpt  |
| abs               Abs. rate of change of deriv. for bkpt  |
 ------------------------------------------------------------
@end example


@node GaAs MESFET model, Level 1 MOSfet model, Lossy transmission line, Model and Device Parameters
@section MES:  GaAs MESFET model
@example
 
 ------------------------------------------------------------
|          MES - instance parameters (input-output)         |
|-----------------------------------------------------------+
| area              Area factor                             |
| icvds             Initial D-S voltage                     |
| icvgs             Initial G-S voltage                     |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          MES - instance parameters (output-only)          |
|-----------------------------------------------------------+
|off            Device initially off                        |
|dnode          Number of drain node                        |
|gnode          Number of gate node                         |
|snode          Number of source node                       |
 ------------------------------------------------------------
|dprimenode     Number of internal drain node               |
|sprimenode     Number of internal source node              |
|vgs            Gate-Source voltage                         |
|vgd            Gate-Drain voltage                          |
|-----------------------------------------------------------+
|cg             Gate capacitance                            |
|cd             Drain capacitance                           |
|cgd            Gate-Drain capacitance                      |
|gm             Transconductance                            |
 ------------------------------------------------------------
|gds            Drain-Source conductance                    |
|ggs            Gate-Source conductance                     |
|ggd            Gate-Drain conductance                      |
|cqgs           Capacitance due to gate-source charge storage
|-----------------------------------------------------------+
|cqgd           Capacitance due to gate-drain charge storage|
|qgs            Gate-Source charge storage                  |
|qgd            Gate-Drain charge storage                   |
|is             Source current                              |
|                         continued                |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|     MES - instance output-only parameters - continued
|-----------------------------------------------------------+
| p                 Power dissipated by the mesfet          |
 -----------------------------------------------------------
 ------------------------------------------------------------
|            MES - model parameters (input-only)            |
|-----------------------------------------------------------+
| nmf               N type MESfet model                     |
| pmf               P type MESfet model                     |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           MES - model parameters (input-output)           |
|-----------------------------------------------------------+
| vt0               Pinch-off voltage                       |
| vto               (null)                                  |
| alpha             Saturation voltage parameter            |
| beta              Transconductance parameter              |
 ------------------------------------------------------------
| lambda            Channel length modulation param.        |
| b                 Doping tail extending parameter         |
| rd                Drain ohmic resistance                  |
| rs                Source ohmic resistance                 |
|-----------------------------------------------------------+
| cgs               G-S junction capacitance                |
| cgd               G-D junction capacitance                |
| pb                Gate junction potential                 |
| is                Junction saturation current             |
 ------------------------------------------------------------
| fc                Forward bias junction fit param.        |
| kf                Flicker noise coefficient               |
| af                Flicker noise exponent                  |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|            MES - model parameters (output-only)           |
|-----------------------------------------------------------+
| type              N-type or P-type MESfet model           |
| gd                Drain conductance                       |
| gs                Source conductance                      |
| depl_cap          Depletion capacitance                   |
| vcrit             Critical voltage                        |
 ------------------------------------------------------------
@end example


@node Level 1 MOSfet model, Level 2 MOSfet model, GaAs MESFET model, Model and Device Parameters
@section Mos1:  Level 1 MOSfet model with  Meyer capacitance model
@example
 
 ------------------------------------------------------------
|          Mos1 - instance parameters (input-only)          |
|-----------------------------------------------------------+
| off               Device initially off                    |
| ic                Vector of D-S, G-S, B-S voltages        |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|         Mos1 - instance parameters (input-output)         |
|-----------------------------------------------------------+
| m                 Multiplicity
| l                 Length                                  |
| w                 Width                                   |
| ad                Drain area                              |
| as                Source area                             |
 ------------------------------------------------------------
| pd                Drain perimeter                         |
| ps                Source perimeter                        |
| nrd               Drain squares                           |
| nrs               Source squares                          |
|-----------------------------------------------------------+
| icvds             Initial D-S voltage                     |
| icvgs             Initial G-S voltage                     |
| icvbs             Initial B-S voltage                     |
| temp              Instance temperature                    |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          Mos1 - instance parameters (output-only)         |
|-----------------------------------------------------------+
| id                Drain current                           |
| is                Source current                          |
| ig                Gate current                            |
| ib                Bulk current                            |
 ------------------------------------------------------------
| ibd               B-D junction current                    |
| ibs               B-S junction current                    |
| vgs               Gate-Source voltage                     |
| vds               Drain-Source voltage                    |
|-----------------------------------------------------------+
| vbs               Bulk-Source voltage                     |
| vbd               Bulk-Drain voltage                      |
| dnode             Number of the drain node                |
| gnode             Number of the gate node                 |
 ------------------------------------------------------------
| snode             Number of the source node               |
| bnode             Number of the node                      |
| dnodeprime        Number of int. drain node               |
| snodeprime        Number of int. source node              |
|-----------------------------------------------------------+
| von                                                       |
| vdsat             Saturation drain voltage                |
| sourcevcrit       Critical source voltage                 |
| drainvcrit        Critical drain voltage                  |
| rs                Source resistance                       |
|                         continued                         |
 ------------------------------------------------------------

 
 --------------------------------------------------------------
|      Mos1 - instance output-only parameters - continued
|-------------------------------------------------------------+
|sourceconductanceConductance of source                       |
|rd               Drain conductance                           |
|drainconductance Conductance of drain                        |
|gm               Transconductance                            |
 --------------------------------------------------------------
|gds              Drain-Source conductance                    |
|gmb              Bulk-Source transconductance                |
|gmbs                                                         |
|gbd              Bulk-Drain conductance                      |
|-------------------------------------------------------------+
|gbs              Bulk-Source conductance                     |
|cbd              Bulk-Drain capacitance                      |
|cbs              Bulk-Source capacitance                     |
|cgs              Gate-Source capacitance                     |
 --------------------------------------------------------------
|cgd              Gate-Drain capacitance                      |
|cgb              Gate-Bulk capacitance                       |
|cqgs             Capacitance due to gate-source charge storage
|cqgd             Capacitance due to gate-drain charge storage|
|-------------------------------------------------------------+
|cqgb             Capacitance due to gate-bulk charge storage |
|cqbd             Capacitance due to bulk-drain charge storage|
 cqbs             Capacitance due to bulk-source charge storage
|cbd0             Zero-Bias B-D junction capacitance          |
 --------------------------------------------------------------
|cbdsw0                                                       |
|cbs0             Zero-Bias B-S junction capacitance          |
|cbssw0                                                       |
|qgs              Gate-Source charge storage                  |
|-------------------------------------------------------------+
|qgd              Gate-Drain charge storage                   |
|qgb              Gate-Bulk charge storage                    |
|qbd              Bulk-Drain charge storage                   |
|qbs              Bulk-Source charge storage                  |
|p                Instaneous power                            |
 --------------------------------------------------------------

 
 ------------------------------------------------------------
|            Mos1 - model parameters (input-only)           |
|-----------------------------------------------------------+
| nmos              N type MOSfet model                     |
| pmos              P type MOSfet model                     |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           Mos1 - model parameters (input-output)          |
|-----------------------------------------------------------+
| vto               Threshold voltage                       |
| vt0               (null)                                  |
| kp                Transconductance parameter              |
| gamma             Bulk threshold parameter                |
 ------------------------------------------------------------
| phi               Surface potential                       |
| lambda            Channel length modulation               |
| rd                Drain ohmic resistance                  |
|                         continued                         |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|      Mos1 - model input-output parameters - continued
|-----------------------------------------------------------+
| rs                Source ohmic resistance                 |
| cbd               B-D junction capacitance                |
| cbs               B-S junction capacitance                |
| is                Bulk junction sat. current              |
 ------------------------------------------------------------
| pb                Bulk junction potential                 |
| cgso              Gate-source overlap cap.                |
| cgdo              Gate-drain overlap cap.                 |
| cgbo              Gate-bulk overlap cap.                  |
|-----------------------------------------------------------+
| rsh               Sheet resistance                        |
| cj                Bottom junction cap per area            |
| mj                Bottom grading coefficient              |
| cjsw              Side junction cap per area              |
 ------------------------------------------------------------
| mjsw              Side grading coefficient                |
| js                Bulk jct. sat. current density          |
| tox               Oxide thickness                         |
| ld                Lateral diffusion                       |
|-----------------------------------------------------------+
| u0                Surface mobility                        |
| uo                (null)                                  |
| fc                Forward bias jct. fit param.           |
| nsub              Substrate doping                        |
 ------------------------------------------------------------
| tpg               Gate type                               |
| nss               Surface state density                   |
| tnom              Parameter measurement temperature       |
| kf                Flicker noise coefficient               |
| af                Flicker noise exponent                  |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           Mos1 - model parameters (output-only)           |
|-----------------------------------------------------------+
| type              N-channel or P-channel MOS              |
 ------------------------------------------------------------
@end example


@node Level 2 MOSfet model, Level 3 MOSfet model, Level 1 MOSfet model, Model and Device Parameters
@section Mos2:  Level 2 MOSfet model with Meyer capacitance model
@example
 
 ------------------------------------------------------------
|          Mos2 - instance parameters (input-only)          |
|-----------------------------------------------------------+
| off               Device initially off                    |
| ic                Vector of D-S, G-S, B-S voltages        |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|         Mos2 - instance parameters (input-output)         |
|-----------------------------------------------------------+
| m                 Multiplicity                            |
| l                 Length                                  |
| w                 Width                                   |
| ad                Drain area                              |
| as                Source area                             |
 ------------------------------------------------------------
| pd                Drain perimeter                         |
| ps                Source perimeter                        |
| nrd               Drain squares                           |
| nrs               Source squares                          |
|-----------------------------------------------------------+
| icvds             Initial D-S voltage                     |
| icvgs             Initial G-S voltage                     |
| icvbs             Initial B-S voltage                     |
| temp              Instance operating temperature          |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          Mos2 - instance parameters (output-only)         |
|-----------------------------------------------------------+
| id                Drain current                           |
| cd                                                        |
| ibd               B-D junction current                    |
| ibs               B-S junction current                    |
 ------------------------------------------------------------
| is                Source current                          |
| ig                Gate current                            |
| ib                Bulk current                            |
| vgs               Gate-Source voltage                     |
|-----------------------------------------------------------+
| vds               Drain-Source voltage                    |
| vbs               Bulk-Source voltage                     |
| vbd               Bulk-Drain voltage                      |
| dnode             Number of drain node                    |
 ------------------------------------------------------------
| gnode             Number of gate node                     |
| snode             Number of source node                   |
| bnode             Number of bulk node                     |
| dnodeprime        Number of internal drain node           |
|-----------------------------------------------------------+
| snodeprime        Number of internal source node          |
| von                                                       |
| vdsat             Saturation drain voltage                |
| sourcevcrit       Critical source voltage                 |
| drainvcrit        Critical drain voltage                  |
|                         continued                         |
 ------------------------------------------------------------

 
 --------------------------------------------------------------
|      Mos2 - instance output-only parameters - continued
|-------------------------------------------------------------+
|rs               Source resistance                           |
|sourceconductanceSource conductance                          |
|rd               Drain resistance                            |
|drainconductance Drain conductance                           |
 --------------------------------------------------------------
|gm               Transconductance                            |
|gds              Drain-Source conductance                    |
|gmb              Bulk-Source transconductance                |
|gmbs                                                         |
|-------------------------------------------------------------+
|gbd              Bulk-Drain conductance                      |
|gbs              Bulk-Source conductance                     |
|cbd              Bulk-Drain capacitance                      |
|cbs              Bulk-Source capacitance                     |
 --------------------------------------------------------------
|cgs              Gate-Source capacitance                     |
|cgd              Gate-Drain capacitance                      |
|cgb              Gate-Bulk capacitance                       |
|cbd0             Zero-Bias B-D junction capacitance          |
|-------------------------------------------------------------+
|cbdsw0                                                       |
|cbs0             Zero-Bias B-S junction capacitance          |
|cbssw0                                                       |
 cqgs             Capacitance due to gate-source charge storage
|                                                             |
 --------------------------------------------------------------
|cqgd             Capacitance due to gate-drain charge storage|
|cqgb             Capacitance due to gate-bulk charge storage |
|cqbd             Capacitance due to bulk-drain charge storage|
|cqbs             Capacitance due to bulk-source charge storage
|-------------------------------------------------------------+
|qgs              Gate-Source charge storage                  |
|qgd              Gate-Drain charge storage                   |
|qgb              Gate-Bulk charge storage                    |
|qbd              Bulk-Drain charge storage                   |
|qbs              Bulk-Source charge storage                  |
|p                Instantaneous power                         |
 --------------------------------------------------------------

 
 ------------------------------------------------------------
|            Mos2 - model parameters (input-only)           |
|-----------------------------------------------------------+
| nmos              N type MOSfet model                     |
| pmos              P type MOSfet model                     |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           Mos2 - model parameters (input-output)          |
|-----------------------------------------------------------+
| vto               Threshold voltage                       |
| vt0               (null)                                  |
| kp                Transconductance parameter              |
| gamma             Bulk threshold parameter                |
 ------------------------------------------------------------
| phi               Surface potential                       |
| lambda            Channel length modulation               |
| rd                Drain ohmic resistance                  |
| rs                Source ohmic resistance                 |
|-----------------------------------------------------------+
| cbd               B-D junction capacitance                |
| cbs               B-S junction capacitance                |
| is                Bulk junction sat. current              |
| pb                Bulk junction potential                 |
 ------------------------------------------------------------
| cgso              Gate-source overlap cap.                |
| cgdo              Gate-drain overlap cap.                 |
| cgbo              Gate-bulk overlap cap.                  |
| rsh               Sheet resistance                        |
|-----------------------------------------------------------+
| cj                Bottom junction cap per area            |
| mj                Bottom grading coefficient              |
| cjsw              Side junction cap per area              |
| mjsw              Side grading coefficient                |
 ------------------------------------------------------------
| js                Bulk jct. sat. current density          |
| tox               Oxide thickness                         |
| ld                Lateral diffusion                       |
| u0                Surface mobility                        |
|-----------------------------------------------------------+
| uo                (null)                                  |
| fc                Forward bias jct. fit param.            |
| nsub              Substrate doping                        |
| tpg               Gate type                               |
 ------------------------------------------------------------
| nss               Surface state density                   |
| delta             Width effect on threshold               |
| uexp              Crit. field exp for mob. deg.           |
| ucrit             Crit. field for mob. degradation        |
|-----------------------------------------------------------+
| vmax              Maximum carrier drift velocity          |
| xj                Junction depth                          |
| neff              Total channel charge coeff.             |
| nfs               Fast surface state density              |
 ------------------------------------------------------------
| tnom              Parameter measurement temperature       |
| kf                Flicker noise coefficient               |
| af                Flicker noise exponent                  |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           Mos2 - model parameters (output-only)           |
|-----------------------------------------------------------+
| type              N-channel or P-channel MOS              |
 ------------------------------------------------------------
@end example


@node Level 3 MOSfet model, Level 6 MOSfet model, Level 2 MOSfet model, Model and Device Parameters
@section Mos3: Level 3 MOSfet model with Meyer capacitance model
@example

 
 ------------------------------------------------------------
|          Mos3 - instance parameters (input-only)          |
|-----------------------------------------------------------+
| off               Device initially off                    |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|         Mos3 - instance parameters (input-output)         |
|-----------------------------------------------------------+
| m                 Multiplicity                            |
| l                 Length                                  |
| w                 Width                                   |
| ad                Drain area                              |
| as                Source area                             |
------------------------------------------------------------+
| pd                Drain perimeter                         |
| ps                Source perimeter                        |
| nrd               Drain squares                           |
| nrs               Source squares                          |
|-----------------------------------------------------------+
| icvds             Initial D-S voltage                     |
| icvgs             Initial G-S voltage                     |
| icvbs             Initial B-S voltage                     |
| ic                Vector of D-S, G-S, B-S voltages        |
| temp              Instance operating temperature          |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          Mos3 - instance parameters (output-only)         |
|-----------------------------------------------------------+
| id                Drain current                           |
| cd                Drain current                           |
| ibd               B-D junction current                    |
| ibs               B-S junction current                    |
 ------------------------------------------------------------
| is                Source current                          |
| ig                Gate current                            |
| ib                Bulk current                            |
| vgs               Gate-Source voltage                     |
|-----------------------------------------------------------+
| vds               Drain-Source voltage                    |
| vbs               Bulk-Source voltage                     |
| vbd               Bulk-Drain voltage                      |
| dnode             Number of drain node                    |
 ------------------------------------------------------------
| gnode             Number of gate node                     |
| snode             Number of source node                   |
| bnode             Number of bulk node                     |
| dnodeprime        Number of internal drain node           |
| snodeprime        Number of internal source node          |
|                         continued                         |
 ------------------------------------------------------------

 
 --------------------------------------------------------------
|      Mos3 - instance output-only parameters - continued
|-------------------------------------------------------------+
|von              Turn-on voltage                             |
|vdsat            Saturation drain voltage                    |
|sourcevcrit      Critical source voltage                     |
|drainvcrit       Critical drain voltage                      |
 --------------------------------------------------------------
|rs               Source resistance                           |
|sourceconductanceSource conductance                          |
|rd               Drain resistance                            |
|drainconductance Drain conductance                           |
|-------------------------------------------------------------+
|gm               Transconductance                            |
|gds              Drain-Source conductance                    |
|gmb              Bulk-Source transconductance                |
|gmbs             Bulk-Source transconductance                |
 --------------------------------------------------------------
|gbd              Bulk-Drain conductance                      |
|gbs              Bulk-Source conductance                     |
|cbd              Bulk-Drain capacitance                      |
|cbs              Bulk-Source capacitance                     |
|-------------------------------------------------------------+
|cgs              Gate-Source capacitance                     |
|cgd              Gate-Drain capacitance                      |
|cgb              Gate-Bulk capacitance                       |
 cqgs             Capacitance due to gate-source charge storage
|                                                             |
 --------------------------------------------------------------
|cqgd             Capacitance due to gate-drain charge storage|
|cqgb             Capacitance due to gate-bulk charge storage |
|cqbd             Capacitance due to bulk-drain charge storage|
|cqbs             Capacitance due to bulk-source charge storage
|-------------------------------------------------------------+
|cbd0             Zero-Bias B-D junction capacitance          |
|cbdsw0           Zero-Bias B-D sidewall capacitance          |
|cbs0             Zero-Bias B-S junction capacitance          |
|cbssw0           Zero-Bias B-S sidewall capacitance          |
 --------------------------------------------------------------
|qbs              Bulk-Source charge storage                  |
|qgs              Gate-Source charge storage                  |
|qgd              Gate-Drain charge storage                   |
|qgb              Gate-Bulk charge storage                    |
|qbd              Bulk-Drain charge storage                   |
|p                Instantaneous power                         |
 --------------------------------------------------------------

 
 ------------------------------------------------------------
|            Mos3 - model parameters (input-only)           |
|-----------------------------------------------------------+
| nmos              N type MOSfet model                     |
| pmos              P type MOSfet model                     |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           Mos3 - model parameters (input-output)          |
|-----------------------------------------------------------+
| vto               Threshold voltage                       |
| vt0               (null)                                  |
| kp                Transconductance parameter              |
| gamma             Bulk threshold parameter                |
 ------------------------------------------------------------
| phi               Surface potential                       |
| rd                Drain ohmic resistance                  |
| rs                Source ohmic resistance                 |
| cbd               B-D junction capacitance                |
|-----------------------------------------------------------+
| cbs               B-S junction capacitance                |
| is                Bulk junction sat. current              |
| pb                Bulk junction potential                 |
| cgso              Gate-source overlap cap.                |
 ------------------------------------------------------------
| cgdo              Gate-drain overlap cap.                 |
| cgbo              Gate-bulk overlap cap.                  |
| rsh               Sheet resistance                        |
| cj                Bottom junction cap per area            |
|-----------------------------------------------------------+
| mj                Bottom grading coefficient              |
| cjsw              Side junction cap per area              |
| mjsw              Side grading coefficient                |
| js                Bulk jct. sat. current density          |
 ------------------------------------------------------------
| tox               Oxide thickness                         |
| xl                Length mask adjustment                  |
| wd                Width Narrowing (Diffusion)             |
| xw                Width mask adjustment                   |
| ld                Lateral diffusion                       |
| u0                Surface mobility                        |
| uo                (null)                                  |
|-----------------------------------------------------------+
| fc                Forward bias jct. fit param.            |
| nsub              Substrate doping                        |
| tpg               Gate type                               |
| nss               Surface state density                   |
 ------------------------------------------------------------
| vmax              Maximum carrier drift velocity          |
| xj                Junction depth                          |
| nfs               Fast surface state density              |
| xd                Depletion layer width                   |
|-----------------------------------------------------------+
| alpha             Alpha                                   |
| eta               Vds dependence of threshold voltage     |
| delta             Width effect on threshold               |
| input_delta       (null)                                  |
 ------------------------------------------------------------
| theta             Vgs dependence on mobility              |
| kappa             Kappa                                   |
| tnom              Parameter measurement temperature       |
| kf                Flicker noise coefficient               |
| af                Flicker noise exponent                  |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           Mos3 - model parameters (output-only)           |
|-----------------------------------------------------------+
| type              N-channel or P-channel MOS              |
 ------------------------------------------------------------
@end example


@node Level 6 MOSfet model, Simple linear resistor, Level 3 MOSfet model, Model and Device Parameters
@section Mos6: Level 6 MOSfet model with Meyer capacitance model
@example

 
 ------------------------------------------------------------
|          Mos6 - instance parameters (input-only)          |
|-----------------------------------------------------------+
| off               Device initially off                    |
| ic                Vector of D-S, G-S, B-S voltages        |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|         Mos6 - instance parameters (input-output)         |
|-----------------------------------------------------------+
| l                 Length                                  |
| w                 Width                                   |
| ad                Drain area                              |
| as                Source area                             |
 ------------------------------------------------------------
| pd                Drain perimeter                         |
| ps                Source perimeter                        |
| nrd               Drain squares                           |
| nrs               Source squares                          |
|-----------------------------------------------------------+
| icvds             Initial D-S voltage                     |
| icvgs             Initial G-S voltage                     |
| icvbs             Initial B-S voltage                     |
| temp              Instance temperature                    |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          Mos6 - instance parameters (output-only)         |
|-----------------------------------------------------------+
| id                Drain current                           |
| cd                Drain current                           |
| is                Source current                          |
| ig                Gate current                            |
 ------------------------------------------------------------
| ib                Bulk current                            |
| ibs               B-S junction capacitance                |
| ibd               B-D junction capacitance                |
| vgs               Gate-Source voltage                     |
|-----------------------------------------------------------+
| vds               Drain-Source voltage                    |
| vbs               Bulk-Source voltage                     |
| vbd               Bulk-Drain voltage                      |
| dnode             Number of the drain node                |
 ------------------------------------------------------------
| gnode             Number of the gate node                 |
| snode             Number of the source node               |
| bnode             Number of the node                      |
| dnodeprime        Number of int. drain node               |
| snodeprime        Number of int. source node              |
|                         continued                         |
 ------------------------------------------------------------

 
 --------------------------------------------------------------
|      Mos6 - instance output-only parameters - continued
|-------------------------------------------------------------+
|rs               Source resistance                           |
|sourceconductanceSource conductance                          |
|rd               Drain resistance                            |
|drainconductance Drain conductance                           |
 --------------------------------------------------------------
|von              Turn-on voltage                             |
|vdsat            Saturation drain voltage                    |
|sourcevcrit      Critical source voltage                     |
|drainvcrit       Critical drain voltage                      |
|-------------------------------------------------------------+
|gmbs             Bulk-Source transconductance                |
|gm               Transconductance                            |
|gds              Drain-Source conductance                    |
|gbd              Bulk-Drain conductance                      |
 --------------------------------------------------------------
|gbs              Bulk-Source conductance                     |
|cgs              Gate-Source capacitance                     |
|cgd              Gate-Drain capacitance                      |
|cgb              Gate-Bulk capacitance                       |
|-------------------------------------------------------------+
|cbd              Bulk-Drain capacitance                      |
|cbs              Bulk-Source capacitance                     |
|cbd0             Zero-Bias B-D junction capacitance          |
|cbdsw0                                                       |
 --------------------------------------------------------------
|cbs0             Zero-Bias B-S junction capacitance          |
|cbssw0                                                       |
|cqgs             Capacitance due to gate-source charge storage
|cqgd             Capacitance due to gate-drain charge storage|
|-------------------------------------------------------------+
|cqgb             Capacitance due to gate-bulk charge storage |
|cqbd             Capacitance due to bulk-drain charge storage|
 cqbs             Capacitance due to bulk-source charge storage
|qgs              Gate-Source charge storage                  |
 --------------------------------------------------------------
|qgd              Gate-Drain charge storage                   |
|qgb              Gate-Bulk charge storage                    |
|qbd              Bulk-Drain charge storage                   |
|qbs              Bulk-Source charge storage                  |
|p                Instantaneous power                         |
 --------------------------------------------------------------

 
 ------------------------------------------------------------
|            Mos6 - model parameters (input-only)           |
|-----------------------------------------------------------+
| nmos              N type MOSfet model                     |
| pmos              P type MOSfet model                     |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           Mos6 - model parameters (input-output)          |
|-----------------------------------------------------------+
| vto               Threshold voltage                       |
| vt0               (null)                                  |
| kv                Saturation voltage factor               |
| nv                Saturation voltage coeff.               |
 ------------------------------------------------------------
| kc                Saturation current factor               |
| nc                Saturation current coeff.               |
| nvth              Threshold voltage coeff.                |
| ps                Sat. current modification  par.         |
|-----------------------------------------------------------+
| gamma             Bulk threshold parameter                |
| gamma1            Bulk threshold parameter 1              |
| sigma             Static feedback effect par.             |
| phi               Surface potential                       |
 ------------------------------------------------------------
| lambda            Channel length modulation param.        |
| lambda0           Channel length modulation param. 0      |
| lambda1           Channel length modulation param. 1      |
| rd                Drain ohmic resistance                  |
|-----------------------------------------------------------+
| rs                Source ohmic resistance                 |
| cbd               B-D junction capacitance                |
| cbs               B-S junction capacitance                |
| is                Bulk junction sat. current              |
 ------------------------------------------------------------
| pb                Bulk junction potential                 |
| cgso              Gate-source overlap cap.                |
| cgdo              Gate-drain overlap cap.                 |
| cgbo              Gate-bulk overlap cap.                  |
|-----------------------------------------------------------+
| rsh               Sheet resistance                        |
| cj                Bottom junction cap per area            |
| mj                Bottom grading coefficient              |
| cjsw              Side junction cap per area              |
 ------------------------------------------------------------
| mjsw              Side grading coefficient                |
| js                Bulk jct. sat. current density          |
| ld                Lateral diffusion                       |
| tox               Oxide thickness                         |
|-----------------------------------------------------------+
| u0                Surface mobility                        |
| uo                (null)                                  |
| fc                Forward bias jct. fit param.            |
| tpg               Gate type                               |
 ------------------------------------------------------------
| nsub              Substrate doping                        |
| nss               Surface state density                   |
| tnom              Parameter measurement temperature       |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|           Mos6 - model parameters (output-only)           |
|-----------------------------------------------------------+
| type              N-channel or P-channel MOS              |
 ------------------------------------------------------------
@end example


@node Simple linear resistor, Ideal voltage controlled switch, Level 6 MOSfet model, Model and Device Parameters
@section Resistor:  Simple linear resistor
@example
 
 ------------------------------------------------------------
|       Resistor - instance parameters (input-output)       |
|-----------------------------------------------------------+
| resistance        Resistance                              |
| temp              Instance operating temperature          |
| l                 Length                                  |
| w                 Width                                   |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|        Resistor - instance parameters (output-only)       |
|-----------------------------------------------------------+
| i                 Current                                 |
| p                 Power                                   |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          Resistor - model parameters (input-only)         |
|-----------------------------------------------------------+
| r                 Device is a resistor model              |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|         Resistor - model parameters (input-output)        |
|-----------------------------------------------------------+
| rsh               Sheet resistance                        |
| narrow            Narrowing of resistor                   |
| tc1               First order temp. coefficient           |
| tc2               Second order temp. coefficient          |
| defw              Default device width                    |
| tnom              Parameter measurement temperature       |
 ------------------------------------------------------------
@end example


@node Ideal voltage controlled switch, Lossless transmission line, Simple linear resistor, Model and Device Parameters
@section Switch:  Ideal voltage controlled switch
@example
 
 ------------------------------------------------------------
|         Switch - instance parameters (input-only)         |
|-----------------------------------------------------------+
| on                Switch initially closed                 |
| off               Switch initially open                   |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|        Switch - instance parameters (input-output)        |
|-----------------------------------------------------------+
| pos_node          Positive node of switch                 |
| neg_node          Negative node of switch                 |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|         Switch - instance parameters (output-only)        |
|-----------------------------------------------------------+
| cont_p_node       Positive contr. node of switch          |
| cont_n_node       Positive contr. node of switch          |
| i                 Switch current                          |
| p                 Switch power                            |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          Switch - model parameters (input-output)         |
|-----------------------------------------------------------+
| sw                Switch model                            |
| vt                Threshold voltage                       |
| vh                Hysteresis voltage                      |
| ron               Resistance when closed                  |
| roff              Resistance when open                    |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          Switch - model parameters (output-only)          |
|-----------------------------------------------------------+
| gon               Conductance when closed                 |
| goff              Conductance when open                   |
 ------------------------------------------------------------
@end example


@node Lossless transmission line, Voltage controlled current source, Ideal voltage controlled switch, Model and Device Parameters
@section Tranline:  Lossless transmission line
@example
 
 ------------------------------------------------------------
|        Tranline - instance parameters (input-only)        |
|-----------------------------------------------------------+
| ic                Initial condition vector:v1,i1,v2,i2    |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|       Tranline - instance parameters (input-output)       |
|-----------------------------------------------------------+
| z0                Characteristic impedance                |
| zo                (null)                                  |
| f                 Frequency                               |
| td                Transmission delay                      |
 ------------------------------------------------------------
| nl                Normalized length at frequency given    |
| v1                Initial voltage at end 1                |
| v2                Initial voltage at end 2                |
| i1                Initial current at end 1                |
| i2                Initial current at end 2                |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|        Tranline - instance parameters (output-only)       |
|-----------------------------------------------------------+
| rel               Rel. rate of change of deriv. for bkpt  |
| abs               Abs. rate of change of deriv. for bkpt  |
| pos_node1         Positive node of end 1 of t. line       |
| neg_node1         Negative node of end 1 of t. line       |
 ------------------------------------------------------------
| pos_node2         Positive node of end 2 of t. line       |
| neg_node2         Negative node of end 2 of t. line       |
| delays            Delayed values of excitation            |
 ------------------------------------------------------------
@end example


@node Voltage controlled current source, Voltage controlled voltage source, Lossless transmission line, Model and Device Parameters
@section VCCS:  Voltage controlled current source
@example
 
 ------------------------------------------------------------
|          VCCS - instance parameters (input-only)          |
|-----------------------------------------------------------+
| ic                Initial condition of controlling source |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|         VCCS - instance parameters (input-output)         |
|-----------------------------------------------------------+
| gain              Transconductance of source (gain)       |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          VCCS - instance parameters (output-only)         |
|-----------------------------------------------------------+
| pos_node          Positive node of source                 |
| neg_node          Negative node of source                 |
| cont_p_node       Positive node of contr. source          |
| cont_n_node       Negative node of contr. source          |
 ------------------------------------------------------------
| i                 Output current                          |
| v                 Voltage across output                   |
| p                 Power                                   |
 ------------------------------------------------------------
@end example


@node Voltage controlled voltage source, Independent voltage source, Voltage controlled current source, Model and Device Parameters
@section VCVS:  Voltage controlled voltage source
@example
 
 ------------------------------------------------------------
|          VCVS - instance parameters (input-only)          |
|-----------------------------------------------------------+
| ic                Initial condition of controlling source |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|         VCVS - instance parameters (input-output)         |
|-----------------------------------------------------------+
| gain              Voltage gain                            |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|          VCVS - instance parameters (output-only)         |
|-----------------------------------------------------------+
| pos_node          Positive node of source                 |
| neg_node          Negative node of source                 |
| cont_p_node       Positive node of contr. source          |
  cont_n_node       Negative node of contr. source
 ------------------------------------------------------------
| i                 Output current                          |
| v                 Output voltage                          |
| p                 Power                                   |
 ------------------------------------------------------------
@end example


@node Independent voltage source,  , Voltage controlled voltage source, Model and Device Parameters
@section Vsource:  Independent voltage source
@example
 
 ------------------------------------------------------------
|         Vsource - instance parameters (input-only)        |
|-----------------------------------------------------------+
| pulse             Pulse description                       |
| sine              Sinusoidal source description           |
| sin               Sinusoidal source description           |
| exp               Exponential source description          |
 ------------------------------------------------------------
| pwl               Piecewise linear description            |
| sffm              Single freq. FM description             |
| ac                AC magnitude, phase vector              |
| distof1           f1 input for distortion                 |
| distof2           f2 input for distortion                 |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|        Vsource - instance parameters (input-output)       |
|-----------------------------------------------------------+
| dc                D.C. source value                       |
| acmag             A.C. Magnitude                          |
| acphase           A.C. Phase                              |
 ------------------------------------------------------------

 
 ------------------------------------------------------------
|        Vsource - instance parameters (output-only)        |
|-----------------------------------------------------------+
| pos_node          Positive node of source                 |
| neg_node          Negative node of source                 |
| function          Function of the source                  |
| order             Order of the source function            |
 ------------------------------------------------------------
| coeffs            Coefficients for the function           |
| acreal            AC real part                            |
| acimag            AC imaginary part                       |
| i                 Voltage source current                  |
| p                 Instantaneous power                     |
 ------------------------------------------------------------
@end example

@chapter NGSPICE enhancements over Spice3

NGSPICE is the result of many hours of work spent in front of a 
screen trying to fix and enhance the original Spice3 code. Most of
the work done affects simulation results in some way, so many users
ask why the results obtained with Spice3 differ with the ones they
get from NGSPICE. 

This chapter collects all the enhancements introduced into NGSPICE 
during its development, ordered by categories. For each improvement 
described here, the file(s) and function(s) affected are reported 
into a table, letting the experienced user to understand at what 
extent such improvement affects his or her simulation. 
  

@section Device models code

This section collects most of the enhancements made to the code 
that builds up device models and device support routines. If you are 
concerned about discrepancies between the results you get with 
NGSPICE and the ones you got with a clean Spice3f, look here to see if 
they depend on a bug that has been fixed (or a new on introduced)

@subsection Resistor Model

The NGSPICE resistor model has been enhanced adding some useful 
features already present in other simulators: 

@itemize @bullet

@item Different resistance value for AC analysis (Serban Popescu).
@item Device Multiplicity. The "M" parameter simulates "M" paralleled
      resistors (Serban Popescu). 
@item "Short" model parameter to take into account resistor shortening 
      due to side etching. The original spice3 implementation had only 
      the "narrow" parameter (Alan Gillespie).
@item "scale" instance parameter to scale the AC or DC value (Paolo 
      Nenzi).     
@end itemize


@noindent
@table @asis
@item Authors:
Alan Gillespie, Paolo Nenzi, Serban Popescu

@item File:
@file{spicelib/dev/res/*} 

@item Function: 
All the functions that makes up the model. 

@item Affects: 
The resistor model only. 
@end table 


@subsection Capacitor Model

In @code{CAPask()}, the power stored in a capacitor and current
through it were not showed correctly during transient analysis.

@noindent
@table @asis

@item Author:
Alan Gillespie

@item File:
@file{spicelib/devices/cap/capask.c} 

@item Function:
@code{CAPask()} 

@item Affects: 
The capacitor model only.
@end table 


@subsection Diode (D) model fixes
 
In the original implementation of the diode model, the parameter 
@code{DIOtBrkdwnV} was used instead of the flag @code{DIObreakdownVoltageGiven},
in the @code{DIOload()} function. In the same function the
@code{DIOjunctionPot} was used instead of the temperature corrected
version @code{DIOtJctPot}. 

In the @code{DIOtemp()} function, the @code{DIOtVcrit} was calculated without 
taking into account the device area.  This could cause floating point 
overflows, especially in device models designed to be scaled by a small area, 
e.g. 2u by 2u diodes (area=4e-12). 

The flawed code was:

@example
here->DIOtVcrit=vte*log(vte/(CONSTroot2*here->DIOtSatCur));
@end example

@example
here->DIOtVcrit=vte*
       log(vte/(CONSTroot2*here->DIOtSatCur*here->DIOarea));
@end example


@noindent
@sc{Enhancement Data:}

@table @asis

@item Author:
Alan Gillespie

@item Files:
@file{spicelib/devices/dioload.c}
@file{spicelib/devices/diotemp.c} 

@item Function:
@code{DIOload(), DIOtemp()} 

@item Affects: 
The pn junction diode model. 
@end table 


@subsection Level 1 MOS model

The Level 1 MOS model (MOS1)now accepts the "M" device 
parameter (multiplicity), to simulate "M" paralleled identical
devices. The "M" parameter affects the following quantities:

@itemize @bullet
@item In the AC load routine (@code{MOS1acLoad()}), the value assigned 
to the "M" (@code{MOS1m}) parameter multiplies the overlap capacitances: 
@code{GateSourceOverlapCap}, @code{GateDrainOverlapCap}, 
@code{GateBulkOverlapCap}.

@item In the instance parameters ask routine (@code{MOS1ask()}),
the value of gate-source, gate-drain and gate-bulk capacitances,
corresponding to the parameters: @code{MOS1_CAPGS}, @code{MOS1_CAPGD},
@code{MOS1_CAPGB}, are multiplied by the value of "M".

@item In the distortion analysis setup routine (@code{MOS1dset()}),
the overlap capcitances (@code{GateSourceOverlapCap}, 
@code{GateDrainOverlapCap}, @code{GateBulkOverlapCap}), the saturation
currents (@code{DrainSatCurr}, @code{SourceSatCurr}), the "beta" 
(@code{Beta}) and the oxide capacitance (@code{OxideCap}) are all
mutiplied by the value of "M". 

@item In the main load routine (@code{MOS1load()}), the value of "M"
paramter multiplies:@code{DrainSatCurr}, @code{SourceSatCurr}, 
@code{GateSourceOverlapCap}, @code{GateDrainOverlapCap}, 
@code{GateBulkOverlapCap}, @code{Beta}, @code{OxideCap}. The meaning of 
the variables have been already explained above.

@item In the noise analysis routine (in @code{MOS1noi()}), the noise 
densities, contained in the @code{noizDEns[]} vector are multplied by 
the value of "M". 

@item In the load routine for Pole-Zero analysis, the following quantities
are multiplied by the value of "M": @code{GateSourceOverlapCap},
@code{GateDrainOverlapCap}, @code{GateBulkOverlapCap}.

@item In the device "temp" routine (in @code{MOS1temp()}) the source and 
drain critical voltages (@code{MOS1sourceVcrit}, @code{MOS1drainVcrit})
are multiplied by the value of "M", like the zero-voltage bulk-drain and 
bulk-source capacitances: @code{czbd}, @code{czbdsw}, @code{czbs}, 
@code{czbssw}, where "sw" suffix stands for "sidewall" and means perimetral
capacitsnces and the drain and sources conductances (
@code{MOS1drainConductance}. @code{MOS1sourceConductance})
@end itemize

Other minor changes for "M" parameter support includes: @code{MOS1sprt()} 
prints the value of "M", @code{MOS1param()} sets the value of "M" and
@code{MOS1ask()} returns that value. 

The "Gmin" implementation across the substrate diodes of MOS1 was incorrect,
correcting this dramatically improved DC convergence. The original code in
@code{MOS1load()} was:

@example
...
...
next1:  if(vbs <= 0) @{
            here->MOS1gbs = SourceSatCur/vt;
            here->MOS1cbs = here->MOS1gbs*vbs;
            here->MOS1gbs += ckt->CKTgmin;
        @} else @{
            evbs = exp(MIN(MAX_EXP_ARG,vbs/vt));
            here->MOS1gbs = SourceSatCur*evbs/vt + ckt->CKTgmin;
            here->MOS1cbs = SourceSatCur * (evbs-1);
        @}
        if(vbd <= 0) @{
            here->MOS1gbd = DrainSatCur/vt;
            here->MOS1cbd = here->MOS1gbd *vbd;
            here->MOS1gbd += ckt->CKTgmin;
        @} else @{
            evbd = exp(MIN(MAX_EXP_ARG,vbd/vt));
            here->MOS1gbd = DrainSatCur*evbd/vt +ckt->CKTgmin;
            here->MOS1cbd = DrainSatCur *(evbd-1);
        @}
...            
...
@end example

and the new one is:
@example
...
...
next1:  if(vbs <= -3*vt) @{
           here->MOS1gbs = ckt->CKTgmin;
           here->MOS1cbs = here->MOS1gbs*vbs-SourceSatCur;
        @} else @{
           evbs = exp(MIN(MAX_EXP_ARG,vbs/vt));
           here->MOS1gbs = SourceSatCur*evbs/vt + ckt->CKTgmin;
           here->MOS1cbs = SourceSatCur*(evbs-1) + ckt->CKTgmin*vbs;
        @}
        if(vbd <= -3*vt) @{
            here->MOS1gbd = ckt->CKTgmin;
            here->MOS1cbd = here->MOS1gbd*vbd-DrainSatCur;
        @} else @{
            evbd = exp(MIN(MAX_EXP_ARG,vbd/vt));
            here->MOS1gbd = DrainSatCur*evbd/vt + ckt->CKTgmin;
            here->MOS1cbd = DrainSatCur*(evbd-1) + ckt->CKTgmin*vbd;
        @}
...
...            
@end example

In the "load current vector" section of the @code{MOS1load()} routine,
"Gmin" appeared in the calculation of @code{ceqbd} and @code{ceqbs}:

@example
     /*
      *  load current vector
      */
      
      ceqbs = model->MOS1type * 
              (here->MOS1cbs-(here->MOS1gbs-ckt->CKTgmin)*vbs);
      ceqbd = model->MOS1type * 
              (here->MOS1cbd-(here->MOS1gbd-ckt->CKTgmin)*vbd);
@end example
 
The code has been corrected as follows:

@example
     /*
      *  load current vector
      */
      
      ceqbs = model->MOS1type * 
              (here->MOS1cbs-(here->MOS1gbs)*vbs);
      ceqbd = model->MOS1type * 
              (here->MOS1cbd-(here->MOS1gbd)*vbd);
@end example
 

MOS1 device reported only half of the Meyer capcitance without adding the 
overlap capacitance contribution, when reporting to the @code{.OP} printout
or in the rawfile. The routine @code{MOS1ask()} was responsible for this:

@example
...
...
 case MOS1_CGS:
      value->rValue = *(ckt->CKTstate0 + here->MOS1capgs);
      return(OK);
 case MOS1_CGD:
      value->rValue = *(ckt->CKTstate0 + here->MOS1capgd);
      return(OK);
...
...
 case MOS1_CAPGS:
      value->rValue = *(ckt->CKTstate0 + here->MOS1capgs);
      return(OK);
...
...        
 case MOS1_CAPGD:
      value->rValue = *(ckt->CKTstate0 + here->MOS1capgd);
      return(OK);
...
...      
 case MOS1_CAPGB:
      value->rValue = *(ckt->CKTstate0 + here->MOS1capgb);
      return(OK);
@end example 

The new code is:

@example
...
...
 case MOS1_CGS:
      value->rValue = 2* *(ckt->CKTstate0 + here->MOS1capgs);
      return(OK);
 case MOS1_CGD:
      value->rValue = 2* *(ckt->CKTstate0 + here->MOS1capgd);
      return(OK);
...
... 
 case MOS1_CAPGS:
    value->rValue = 2* *(ckt->CKTstate0 + here->MOS1capgs);
    /* add overlap capacitance */
    value->rValue += (here->sMOS1modPtr->MOS1gateSourceOverlapCapFactor)
                      * here->MOS1m
                      * (here->MOS1w);
      return(OK);
...
...
 case MOS1_CAPGD:
    value->rValue = 2* *(ckt->CKTstate0 + here->MOS1capgd);
    /* add overlap capacitance */
    value->rValue += (here->sMOS1modPtr->MOS1gateSourceOverlapCapFactor)
                      * here->MOS1m
                      * (here->MOS1w);
      return(OK);
...
...        
 case MOS1_CAPGB:
    value->rValue = 2* *(ckt->CKTstate0 + here->MOS1capgb);
    /* add overlap capacitance */
    value->rValue += (here->sMOS1modPtr->MOS1gateBulkOverlapCapFactor)
                      * here->MOS1m
                      * (here->MOS1l
                      -2*(here->sMOS1modPtr->MOS1latDiff));
      return(OK);
@end example

@subsection Level 2 MOS Model

Level 2 mosfet model now accetps the "M" instance parameter (multiplicity)
to simulate M paralleled identical devices. The affected quantities are:

@itemize @bullet
@item In the AC load routine (@code{MOS2acLoad()}, the value assigned
      to the "M" (@code{MOS2m}) parameter, multiplies the overlap 
      capacitance: @code{ GateSourceOverlapCap}, @code{ GateDrainOverlapCap},
      @code{ GateBulkOverlapCap}.
@item In the @code{MOS2ask()} routine (instance parameters reporting) the 
      gate-source, gate-drain and gate-bulk capacitances, corresponding
      to @code{MOS2_CAPGS}, @code{MOS2_CAPGD}, @code{MOS2_CAPGB} 
      parameters, are multiplied by the value of "M".
@item In the @code{MOS2dset()} function (distortion analysis setup) 
      the overlap capcitances (@code{GateSourceOverlapCap}, 
      @code{GateDrainOverlapCap}, @code{GateBulkOverlapCap}), 
      the saturation currents (@code{DrainSatCurr}, @code{SourceSatCurr}),
      the "beta" (@code{Beta}), the oxide capacitance (@code{OxideCap}) 
      and and the @code{xn} quantity are all mutiplied by the value 
      of "M".
@item In the main load routine @code{MOS2load()}, the value of "M"
      parameter multiplies:@code{DrainSatCurr}, @code{SourceSatCurr}, 
      @code{GateSourceOverlapCap}, @code{GateDrainOverlapCap}, 
      @code{GateBulkOverlapCap}, @code{Beta}, @code{OxideCap}, 
      @code{xn}. The meaning of the variables have been already 
      explained above.
@item In the noise analysis routine @code{MOS2noi()}, the noise 
      densities, contained in the @code{noizDEns[]} vector are 
      multplied by the value of "M".
@item In the load routine for Pole-Zero analysis (@code{MOS2pzLoad()}),
      the following quantities are multiplied by the value of "M": 
      @code{GateSourceOverlapCap}, @code{GateDrainOverlapCap}, 
      @code{GateBulkOverlapCap}.
@item In @code{MOS2temp()} routine the source and drain critical 
      voltages (@code{MOS2sourceVcrit}, @code{MOS2drainVcrit})
      are multiplied by the value of "M", like the zero-voltage 
      bulk-drain and bulk-source capacitances: @code{czbd}, 
      @code{czbdsw}, @code{czbs}, @code{czbssw}, where "sw" suffix 
      stands for "sidewall" and means perimetral capacitances and 
      the drain and sources conductances (@code{MOS2drainConductance},
      @code{MOS2sourceConductance}).
@end itemize


Other minor changes for "M" parameter support includes: @code{MOS2sprt()} 
prints the value of "M", @code{MOS2param()} sets the value of "M" and
@code{MOS2ask()} returns that value. 

The "Gmin" implementation across the substrate diodes of MOS2 was incorrect,
correcting this dramatically improved DC convergence. The original code in
@code{MOS2load()} was:

@example
...
...
 /* bulk-source and bulk-drain diodes
  * here we just evaluate the ideal diode current and the
  * corresponding derivative (conductance).
  */

next1:      if(vbs <= 0) @{
                here->MOS2gbs = SourceSatCur/vt;
                here->MOS2cbs = here->MOS2gbs*vbs;
                here->MOS2gbs += ckt->CKTgmin;
            @} else @{
                evbs = exp(vbs/vt);
                here->MOS2gbs = SourceSatCur*evbs/vt + ckt->CKTgmin;
                here->MOS2cbs = SourceSatCur * (evbs-1);
            @}
            if(vbd <= 0) @{
                here->MOS2gbd = DrainSatCur/vt;
                here->MOS2cbd = here->MOS2gbd *vbd;
                here->MOS2gbd += ckt->CKTgmin;
            @} else @{
                evbd = exp(vbd/vt);
                here->MOS2gbd = DrainSatCur*evbd/vt +ckt->CKTgmin;
                here->MOS2cbd = DrainSatCur *(evbd-1);
            @}

...
...
@end example

Then new code is:

@example
...
...
 /* bulk-source and bulk-drain diodes
  * here we just evaluate the ideal diode current and the
  * corresponding derivative (conductance).
  */
next1:    if(vbs <= -3*vt) @{
              here->MOS2gbs = ckt->CKTgmin;
              here->MOS2cbs = here->MOS2gbs*vbs-SourceSatCur;
          @} else @{
              evbs = exp(MIN(MAX_EXP_ARG,vbs/vt));
              here->MOS2gbs = SourceSatCur*evbs/vt + ckt->CKTgmin;
              here->MOS2cbs = SourceSatCur*(evbs-1) + ckt->CKTgmin*vbs;
          @}
          if(vbd <= -3*vt) @{
              here->MOS2gbd = ckt->CKTgmin;
              here->MOS2cbd = here->MOS2gbd*vbd-DrainSatCur;
          @} else @{
              evbd = exp(MIN(MAX_EXP_ARG,vbd/vt));
              here->MOS2gbd = DrainSatCur*evbd/vt + ckt->CKTgmin;
              here->MOS2cbd = DrainSatCur*(evbd-1) + ckt->CKTgmin*vbd;
          @}

@end example

In the "load current vector" section of the @code{MOS2load()} routine,
"Gmin" appeared in the calculation of @code{ceqbd} and @code{ceqbs}:

@example                 
...
...
 /*
  *  load current vector
  */
     ceqbs = model->MOS2type * 
             (here->MOS2cbs-(here->MOS2gbs-ckt->CKTgmin)*vbs);
     ceqbd = model->MOS2type * 
             (here->MOS2cbd-(here->MOS2gbd-ckt->CKTgmin)*vbd);
...
...
@end example

The correct code is:

@example
...
...
 /*
  *  load current vector
  */
     ceqbs = model->MOS2type * 
             (here->MOS2cbs-(here->MOS2gbs)*vbs);
     ceqbd = model->MOS2type * 
             (here->MOS2cbd-(here->MOS2gbd)*vbd);
...
...
@end example

MOS2 device reported only half of the Meyer capacitance without adding the 
overlap capacitance contribution, when reporting to the @code{.OP} printout
or in the rawfile. The routine @code{MOS2ask()} was responsible for this:


@example
...
...
 case MOS2_CGS:
         value->rValue = *(ckt->CKTstate0 + here->MOS2capgs);
         return(OK);
 case MOS2_CGD:
         value->rValue = *(ckt->CKTstate0 + here->MOS2capgd);
         return(OK);
...
...
 case MOS2_CAPGS:
         value->rValue = *(ckt->CKTstate0 + here->MOS2capgs);
         return(OK);
...
... 
 case MOS2_CAPGD:
         value->rValue = *(ckt->CKTstate0 + here->MOS2capgd);
         return(OK);
...
... 
 case MOS2_CAPGB:
         value->rValue = *(ckt->CKTstate0 + here->MOS2capgb);
         return(OK);
...
...
@end example

The new code is:

@example
...
...
 case MOS2_CGS:
         value->rValue = 2* *(ckt->CKTstate0 + here->MOS2capgs);
         return(OK);
 case MOS2_CGD:
         value->rValue = 2* *(ckt->CKTstate0 + here->MOS2capgd);
         return(OK);
...
...
 case MOS2_CAPGS:
      value->rValue = 2* *(ckt->CKTstate0 + here->MOS2capgs);
      /* add overlap capacitance */
      value->rValue += 
          (here->MOS2modPtr->MOS2gateSourceOverlapCapFactor)
           * here->MOS2m
           * (here->MOS2w);
      return(OK);
...
...        
 case MOS2_CAPGD:
      value->rValue = 2* *(ckt->CKTstate0 + here->MOS2capgd);
      /* add overlap capacitance */
      value->rValue += 
           (here->MOS2modPtr->MOS2gateSourceOverlapCapFactor)
            * here->MOS2m
            * (here->MOS2w);
      return(OK);
...
...         
 case MOS2_CAPGB:
      value->rValue = 2* *(ckt->CKTstate0 + here->MOS2capgb);
      /* add overlap capacitance */
      value->rValue += 
           (here->MOS2modPtr->MOS2gateBulkOverlapCapFactor)
            * here->MOS2m
            * (here->MOS2l
            -2*(here->MOS2modPtr->MOS2latDiff));
      return(OK);
...
...
@end example

The level 2 MOSFET model seems to calculate Von and Vth values for the
threshold and subthreshold values respectively, but then uses Vbin to 
calculate the Vdsat voltage used to find the drain current. However, a 
jump statement uses Von to decide that the device is in the "cutoff" 
region, which means that when this jump allows the drain current to be 
calculated, Vdsat can already be well above zero. This leads to a 
discontinuity of drain current with respect to gate voltage. The code 
is now modified to use Vbin for the jump decision. It looks like the 
code should actually use Vth as the threshold voltage, but since 
PSPICE and HSPICE both follow the original Berkeley code, this was 
left alone. The affected code can be found in @code{MOS2load()}:

@example
...
...
      if ((lvds-lvbs) >= 0) @{
           barg = sqrt(phiMinVbs+lvds);
           dbrgdb = -0.5/barg;
...
...
            vgst = lvgs-von;
            if (lvgs <= von) @{
                /*
                 *  cutoff region
                 */
...
...
            if (lvgs > von) goto line900;
            /*
             *  subthreshold region
             */
...
...
@end example

and the corrected code is:

@example
...
...
      if ((lvbs-lvds) <= 0) @{
           barg = sqrt(phiMinVbs+lvds);
           dbrgdb = -0.5/barg;
...
...

            vgst = lvgs-von;
            if (lvgs <= vbin) @{
                /*
                 *  cutoff region
                 */
...
...              
            if (model->MOS2fastSurfaceStateDensity != 0 
                && OxideCap != 0) @{
                if (lvgs > von) goto line900;
            @} else @{
                if (lvgs > vbin) goto line900;
                goto doneval;
            @}
            /*
             *  subthreshold region
             */
...
...
@end example

@subsection Level 3 Mos Model

The level 3 model has been extensively corrected since it is a 
de-facto standard for circuit simulation. 

The level 3 model supports the "M" parameter (multiplicity), which
can be used to simulate M identical paralleled devices. The "M"
parameter affects the quantities described in the following list:

@itemize @bullet
@item In the AC load routine (@code{MOS3acld()}, the value assigned
      to the "M" (@code{MOS3m}) parameter, multiplies the overlap 
      capacitance: @code{ GateSourceOverlapCap}, @code{ GateDrainOverlapCap},
      @code{ GateBulkOverlapCap}.
@item In the @code{MOS3ask()} function (instance parameters reporting) the 
      gate-source, gate-drain and gate-bulk capacitances, corresponding
      to @code{MOS3_CAPGS}, @code{MOS3_CAPGD}, @code{MOS3_CAPGB} 
      parameters, are multiplied by the value of "M".
@item In the @code{MOS3dset()} function (distorsion analysis setup) 
      the overlap capcitances (@code{GateSourceOverlapCap}, 
      @code{GateDrainOverlapCap}, @code{GateBulkOverlapCap}), 
      the saturation currents (@code{DrainSatCurr}, @code{SourceSatCurr}),
      the "beta" (@code{Beta}), the oxide capacitance (@code{OxideCap}) 
      and and the @code{csonco} quantity are all mutiplied by the value 
      of "M".
@item In the main load routine @code{MOS3load()}, the value of "M"
      parameter multiplies:@code{DrainSatCurr}, @code{SourceSatCurr}, 
      @code{GateSourceOverlapCap}, @code{GateDrainOverlapCap}, 
      @code{GateBulkOverlapCap}, @code{Beta}, @code{OxideCap}, 
      @code{csonco}. The meaning of the variables have been already 
      explained above.                  
@item In the noise analysis routine @code{MOS3noi()}, the noise 
      densities, contained in the @code{noizDEns[]} vector are 
      multplied by the value of "M".
@item In the load routine for Pole-Zero analysis (@code{MOS3pzLoad()}),
      the following quantities are multiplied by the value of "M": 
      @code{GateSourceOverlapCap}, @code{GateDrainOverlapCap}, 
      @code{GateBulkOverlapCap}.
@item In @code{MOS3temp()} routine the source and drain critical 
      voltages (@code{MOS3sourceVcrit}, @code{MOS3drainVcrit})
      are multiplied by the value of "M", like the zero-voltage 
      bulk-drain and bulk-source capacitances: @code{czbd}, 
      @code{czbdsw}, @code{czbs}, @code{czbssw}, where "sw" suffix 
      stands for "sidewall" and means perimetral capacitances and 
      the drain and sources conductances (@code{MOS3drainConductance},
      @code{MOS3sourceConductance}).
@end itemize       

Other minor changes for "M" parameter support includes: @code{MOS3sprt()} 
prints the value of "M", @code{MOS3param()} sets the value of "M" and
@code{MOS3ask()} returns that value. 

Another important improvement over the original Spice3 code is the 
support for process narrowing over drawn dimensions. The three model 
parameters added to level 3 model are: @code{xl}, @code{wd}, @code{xw}.
The changes in the code are described in depth as a reference for 
future model development.

Adding new model parameters usually need the introduction of new 
variables (one for each parameter) in the model structure: 
@code{sMOS3model}, which can be found in @file{mos3defs.h}. In this 
case the new variables are:

@example
...
...
double MOS3lengthAdjust;    /* New param: mask adjustment to length */
double MOS3widthNarrow;     /* New param to reduce effective width */
double MOS3widthAdjust;     /* New param: mask adjustment to width */
...
...
unsigned MOS3lengthAdjustGiven  :1;
unsigned MOS3widthNarrowGiven   :1;
unsigned MOS3widthAdjustGiven   :1;
...
...
#define MOS3_MOD_XL 145
#define MOS3_MOD_WD 146
#define MOS3_MOD_XW 147
...
...
@end example

The single bit field that ends in "Given" are used to indicate 
whether the parameter has been supplied by the user or must be 
defaulted.
The last three @code{#define} are needed as a mean to identify the 
parameters throughout the model, since comparing integers is faster
than comparing stings. As you may have already imagined, those 
numbers must be unique. The association between parameter name and
numerical code appears in @code{MOS3mPTable[]} in @file{mos3.c}:

@example
...
...
IFparm MOS3mPTable[] = @{ /* model parameters */
 OP("type",   MOS3_MOD_TYPE,  IF_STRING ,"N-channel or P-channel MOS"),
 IP("nmos",   MOS3_MOD_NMOS,  IF_FLAG   ,"N type MOSfet model"),
 IP("pmos",   MOS3_MOD_PMOS,  IF_FLAG   ,"P type MOSfet model"),
...
...
 IOP("xl",    MOS3_MOD_XL,    IF_REAL   ,"Length mask adjustment"),
 IOP("wd",    MOS3_MOD_WD,    IF_REAL   ,"Width Narrowing (Diffusion)"),
 IOP("xw",    MOS3_MOD_XW,    IF_REAL   ,"Width mask adjustment"),
...
...
@end example

The keyword @code{IOP} before the three parameters sets them as 
input/output parameters (that can be set and queried). The function
used to set parameters values is @code{MOS3mParam()}, which contains 
the following code:  

@example
...
...
        case MOS3_MOD_XL:
            model->MOS3lengthAdjust = value->rValue;
            model->MOS3lengthAdjustGiven = TRUE;
            break;
        case MOS3_MOD_WD:
            model->MOS3widthNarrow = value->rValue;
            model->MOS3widthNarrowGiven = TRUE;
            break;
        case MOS3_MOD_XW:
            model->MOS3widthAdjust = value->rValue;
            model->MOS3widthAdjustGiven = TRUE;
            break;
...
...            
@end example

The function used to query those parameters is @code{MOS3mAsk()} and
the specific code is:

@example
...
...
        case MOS3_MOD_XL:
            value->rValue = here->MOS3lengthAdjust;
            return(OK);
        case MOS3_MOD_WD:
            value->rValue = here->MOS3widthNarrow;
            return(OK);
        case MOS3_MOD_XW:
            value->rValue = here->MOS3widthAdjust;
            return(OK);
...
...
@end example

The code above describes the interface to the new parameters, their
influence on the model behaviour is contained in the following 
functions: @code{MOS3acLoad()}, @code{MOS3load()}, @code{MOS3noise()},
@code{MOS3pzLoad()}, @code{MOS3setup()}, @code{MOS3sLoad()} and 
@code{MOS3temp()}.

The @code{MOS3acLoad()} function contains the code used to represent
the model for AC (small signal) analysis. The original code was:

@example
...
...
        EffectiveLength=here->MOS3l - 2*model->MOS3latDiff;
        GateSourceOverlapCap = model->MOS3gateSourceOverlapCapFactor * 
                here->MOS3w;
        GateDrainOverlapCap = model->MOS3gateDrainOverlapCapFactor * 
                here->MOS3w;
        GateBulkOverlapCap = model->MOS3gateBulkOverlapCapFactor * 
                EffectiveLength;
...
...

@end example

And the new one:

@example
...
...
    double EffectiveWidth;
...
...
         EffectiveWidth  = here->MOS3w - 2*model->MOS3widthNarrow
                           + model->MOS3widthAdjust;
         EffectiveLength = here->MOS3l - 2*model->MOS3latDiff
                           + model->MOS3lengthAdjust;
         GateSourceOverlapCap = model->MOS3gateSourceOverlapCapFactor * 
                 here->MOS3m * EffectiveWidth;
         GateDrainOverlapCap = model->MOS3gateDrainOverlapCapFactor * 
                 here->MOS3m * EffectiveWidth;
         GateBulkOverlapCap = model->MOS3gateBulkOverlapCapFactor * 
                 here->MOS3m * EffectiveLength;
...
...
@end example

A brief look at the new code shows that a new variable 
@code{EffectiveWidth} appears and its value depends on the 
newly introduced parameters @code{wd} and @code{xw}, through
@code{MOS3widthNarrow} and @code{MOS3widthAdjust}, respectively.
The values of @code{EffectiveLength} is trimmed with the value of
@code{xl} through @code{MOS3lengthAdjust}. The overlap capacitances
are multiplied by @code{EffectiveWidth} instead of @code{MOS3w}. The
@code{MOS3m} value has been discussed above. 

The @code{MOS3pzLoad()} function is very similar to @code{MOS3acLoad()}
and the code affected is almost identical to the one above.

 

The @code{MOS3load()} function describes the model for large signals
analyses. The old code is:

@example
...
...
 EffectiveLength = here->MOS3l - 2*model->MOS3latDiff;
    if( (here->MOS3tSatCurDens == 0) 
        || (here->MOS3drainArea == 0) 
        || (here->MOS3sourceArea == 0)) @{
          DrainSatCur = here->MOS3tSatCur;
          SourceSatCur = here->MOS3tSatCur;
    @} else @{
          DrainSatCur  = here->MOS3tSatCurDens * 
                         here->MOS3drainArea;
          SourceSatCur = here->MOS3tSatCurDens * 
                         here->MOS3sourceArea;
    @}
    GateSourceOverlapCap = model->MOS3gateSourceOverlapCapFactor 
                           * here->MOS3w;
    GateDrainOverlapCap  = model->MOS3gateDrainOverlapCapFactor 
                           * here->MOS3w;
    GateBulkOverlapCap   = model->MOS3gateBulkOverlapCapFactor 
                           * EffectiveLength;
    Beta = here->MOS3tTransconductance * here->MOS3w/EffectiveLength;
    OxideCap = model->MOS3oxideCapFactor * EffectiveLength 
               * here->MOS3w;
...
...
       /*
        *.....body effect
        */
       gammas = model->MOS3gamma*fshort;
       fbodys = 0.5*gammas/(sqphbs+sqphbs);
       fbody = fbodys+model->MOS3narrowFactor/here->MOS3w;
       onfbdy = 1.0/(1.0+fbody);
       dfbdvb = -fbodys*dsqdvb/sqphbs+fbodys*dfsdvb/fshort;
       qbonco =gammas*sqphbs+model->MOS3narrowFactor*phibs/here->MOS3w;
       dqbdvb = gammas*dsqdvb+model->MOS3gamma*dfsdvb*sqphbs-
                model->MOS3narrowFactor/here->MOS3w;
...
...
       /*
        *.....joint weak inversion and strong inversion
        */
       von = vth;
       if ( model->MOS3fastSurfaceStateDensity != 0.0 ) @{
           csonco = CHARGE*model->MOS3fastSurfaceStateDensity 
                    * 1e4 /*(cm**2/m**2)*/ 
                    * EffectiveLength*here->MOS3w/OxideCap;

...
...
@end example

And the new code is:

@example
...
...
 double EffectiveWidth;
...
...
 EffectiveWidth  = here->MOS3w - 2*model->MOS3widthNarrow
                   + model->MOS3widthAdjust;
 EffectiveLength = here->MOS3l - 2*model->MOS3latDiff
                   + model->MOS3lengthAdjust;
 if( (here->MOS3tSatCurDens == 0)  
     || (here->MOS3drainArea == 0)
     || (here->MOS3sourceArea == 0)) @{
       DrainSatCur = here->MOS3m * here->MOS3tSatCur;
       SourceSatCur = here->MOS3m * here->MOS3tSatCur;
  @} else @{
       DrainSatCur = here->MOS3m * here->MOS3tSatCurDens 
                     * here->MOS3drainArea;
       SourceSatCur = here->MOS3m * here->MOS3tSatCurDens  
                      * here->MOS3sourceArea;
  @}
  GateSourceOverlapCap = model->MOS3gateSourceOverlapCapFactor 
                         * here->MOS3m * EffectiveWidth;
  GateDrainOverlapCap  = model->MOS3gateDrainOverlapCapFactor  
                         * here->MOS3m * EffectiveWidth;
  GateBulkOverlapCap   = model->MOS3gateBulkOverlapCapFactor 
                         * here->MOS3m * EffectiveLength;
  Beta = here->MOS3tTransconductance
         * here->MOS3m * EffectiveWidth/EffectiveLength;
  OxideCap = model->MOS3oxideCapFactor * EffectiveLength 
             * here->MOS3m * EffectiveWidth;
...
...
       /*
        *.....body effect
        */
        gammas = model->MOS3gamma*fshort;
        fbodys = 0.5*gammas/(sqphbs+sqphbs);
        fbody  = fbodys+model->MOS3narrowFactor/EffectiveWidth;
        onfbdy = 1.0/(1.0+fbody);
        dfbdvb = -fbodys*dsqdvb/sqphbs+fbodys*dfsdvb/fshort;
        qbonco = gammas*sqphbs+model->MOS3narrowFactor
                  * phibs/EffectiveWidth;
        dqbdvb = gammas*dsqdvb+model->MOS3gamma*dfsdvb*sqphbs
                 - model->MOS3narrowFactor/EffectiveWidth;
...
...
       /*
        *.....joint weak inversion and strong inversion
        */
        von = vth;
        if ( model->MOS3fastSurfaceStateDensity != 0.0 ) @{

            csonco = CHARGE * model->MOS3fastSurfaceStateDensity * 
                    1e4 /*(cm**2/m**2)*/ 
                    * EffectiveLength*EffectiveWidth
                    *  here->MOS3m/OxideCap;
...
...
@end example

The "trick" is to substitute the @code{MOS3w} with the effective
width taking into account device multiplicity. Another point
where device width matters is the noise routine:@code{MOS3noise()}.
The oginal code computes noise densities as follows:

@example
...
...
noizDens[MOS3FLNOIZ] *= model->MOS3fNcoef * 
				 exp(model->MOS3fNexp *
				 log(MAX(FABS(inst->MOS3cd),N_MINLOG))) /
				 (data->freq * inst->MOS3w * 
				 (inst->MOS3l - 2*model->MOS3latDiff) *
				 model->MOS3oxideCapFactor * model->MOS3oxideCapFactor);
...
...
@end example

The new code adds width narrowing and and multiplicity:

@example
...
...
noizDens[MOS3FLNOIZ] *= model->MOS3fNcoef * 
				 exp(model->MOS3fNexp *
				 log(MAX(FABS(inst->MOS3cd),N_MINLOG))) /
				 (data->freq *
				 (inst->MOS3w - 2*model->MOS3widthNarrow) *
                                 inst->MOS3m *
				 (inst->MOS3l - 2*model->MOS3latDiff) *
				 model->MOS3oxideCapFactor * model->MOS3oxideCapFactor);
...
...
@end example

Another  place in the code that needs changes is the device setup 
routine @code{MOS3setup()}. The followig code adds support for
the new parameters:

@example
...
...
        if(!model->MOS3lengthAdjustGiven) @{
            model->MOS3lengthAdjust = 0;
        @}
        if(!model->MOS3widthNarrowGiven) @{
            model->MOS3widthNarrow = 0;
        @}
        if(!model->MOS3widthAdjustGiven) @{
            model->MOS3widthAdjust = 0;
        @}
...
...
@end example

This code sets up the default values when the parameters are not
supplied by the user (since they are optional). 

Another function modified to support the new parameters is the 
@code{MOS3temp()}. The old code is:

@example
            if(here->MOS3l - 2 * model->MOS3latDiff <=0) @{
                (*(SPfrontEnd->IFerror))(ERR_FATAL,
                        "%s: effective channel length less than zero",
                        &(here->MOS3name));
                return(E_BADPARM);
            @}
@end example

And the new one:

@example
...
...
            if(here->MOS3l - 2 * model->MOS3latDiff +
                                 model->MOS3lengthAdjust <1e-6) @{
                (*(SPfrontEnd->IFerror))(ERR_FATAL,
                        "%s: effective channel length less than zero",
                        &(here->MOS3name));
                return(E_PARMVAL);
            @}


            if(here->MOS3w - 2 * model->MOS3widthNarrow +
                                 model->MOS3widthAdjust <1e-6) @{
                (*(SPfrontEnd->IFerror))(ERR_FATAL,
                        "%s: effective channel width less than zero",
                        &(here->MOS3name));
                return(E_PARMVAL);
            @}
...
...
@end example

The changes add a check over device width that was not present in the 
original code and rise an error if the result is less than one micrometer, 
while the old code checked against zero.

The last (but not least) function that needed some care is the 
sensitivity load routine: @code{MOS3sLoad()}. The original code was:

@example
...
...

                EffectiveLength = here->MOS3l 
                    - 2*model->MOS3latDiff;
                if(EffectiveLength == 0) @{ 
                    DqgsDp = 0;
                    DqgdDp = 0;
                    DqgbDp = 0;
                @}
                else @{
                    DqgsDp = model->MOS3type * qgs0 / EffectiveLength;
                    DqgdDp = model->MOS3type * qgd0 / EffectiveLength;
                    DqgbDp = model->MOS3type * qgb0 / EffectiveLength;
                @}
            @}
            else @{
                DqgsDp = model->MOS3type * qgs0 / here->MOS3w;
                DqgdDp = model->MOS3type * qgd0 / here->MOS3w;
                DqgbDp = model->MOS3type * qgb0 / here->MOS3w;
            @}
...
...
@end example

And the modified code is:

@example
...
...
    double EffectiveWidth;
...
...
                EffectiveLength = here->MOS3l 
                    - 2*model->MOS3latDiff + model->MOS3lengthAdjust;
                if(EffectiveLength == 0) @{ 
                    DqgsDp = 0;
                    DqgdDp = 0;
                    DqgbDp = 0;
                @}
                else @{
                    DqgsDp = model->MOS3type * qgs0 / EffectiveLength;
                    DqgdDp = model->MOS3type * qgd0 / EffectiveLength;
                    DqgbDp = model->MOS3type * qgb0 / EffectiveLength;
                @}
            @}
            else @{
                EffectiveWidth = here->MOS3w 
                    - 2*model->MOS3widthNarrow + model->MOS3widthAdjust;
                DqgsDp = model->MOS3type * qgs0 / EffectiveWidth;
                DqgdDp = model->MOS3type * qgd0 / EffectiveWidth;
                DqgbDp = model->MOS3type * qgb0 / EffectiveWidth;
            @}
...
...
@end example

There was an error in the original implementation that did not take into
account lateral diffusion @code{MOS3LatDiff}. The other changes take
into account the effective (against drawn) device width. 

That's all folks! The changes needed to support the new parameters
are (shortly and badly) described. This section on MOS3 continues with 
other fixes. 

MOS3 device reported only half of the Meyer capacitance without adding the 
overlap capacitance contribution, when reporting to the @code{.OP} printout
or in the rawfile. The routine @code{MOS3ask()} was responsible for this:

@example
...
...
   case MOS3_CGS:
            value->rValue = *(ckt->CKTstate0 + here->MOS3capgs);
            return(OK);
        case MOS3_CGD:
            value->rValue = *(ckt->CKTstate0 + here->MOS3capgd);
            return(OK);
...
...
case MOS3_CAPGS:
            value->rValue = *(ckt->CKTstate0 + here->MOS3capgs);
            return(OK);
...
...
        case MOS3_CAPGD:
            value->rValue = *(ckt->CKTstate0 + here->MOS3capgd);
            return(OK);
...
...
        case MOS3_CAPGB:
            value->rValue = *(ckt->CKTstate0 + here->MOS3capgb);
            return(OK);
...
...
@end example

The new code is:

@example
...
...
  case MOS3_CGS:
      value->rValue = 2* *(ckt->CKTstate0 + here->MOS3capgs);
      return(OK);
  case MOS3_CGD:
      value->rValue = 2* *(ckt->CKTstate0 + here->MOS3capgd);
      return(OK);
...
...
  case MOS3_CAPGS:
      value->rValue = 2* *(ckt->CKTstate0 + here->MOS3capgs);
/* add overlap capacitance */
      value->rValue += 
                   (here->MOS3modPtr->MOS3gateSourceOverlapCapFactor)
                    * here->MOS3m
                    * (here->MOS3w
                       +here->MOS3modPtr->MOS3widthAdjust
                       -2*(here->MOS3modPtr->MOS3widthNarrow));
      return(OK);
...
...
  case MOS3_CAPGD:
      value->rValue = 2* *(ckt->CKTstate0 + here->MOS3capgd);
/* add overlap capacitance */
      value->rValue += 
                   (here->MOS3modPtr->MOS3gateDrainOverlapCapFactor)
                    * here->MOS3m
                    * (here->MOS3w
                       +here->MOS3modPtr->MOS3widthAdjust
                       -2*(here->MOS3modPtr->MOS3widthNarrow));
      return(OK);
...
...
  case MOS3_CAPGB:
      value->rValue = 2* *(ckt->CKTstate0 + here->MOS3capgb);
/* add overlap capacitance */
      value->rValue += 
                   (here->MOS3modPtr->MOS3gateBulkOverlapCapFactor)
                    * here->MOS3m
                    * (here->MOS3l
                       +here->MOS3modPtr->MOS3lengthAdjust
                       -2*(here->MOS3modPtr->MOS3latDiff));
      return(OK);
...
...
@end example

The "Gmin" implementation across the substrate diodes of MOS3 was incorrect,
correcting this dramatically improved DC convergence. The original code in
@code{MOS3load()} was:

@example
            /*
             * bulk-source and bulk-drain diodes
             *   here we just evaluate the ideal diode current and the
             *   corresponding derivative (conductance).
             */


next1:    if(vbs <= 0) @{
              here->MOS3gbs = SourceSatCur/vt;
              here->MOS3cbs = here->MOS3gbs*vbs;
              here->MOS3gbs += ckt->CKTgmin;
          @} else @{
              evbs = exp(MIN(MAX_EXP_ARG,vbs/vt));
              here->MOS3gbs = SourceSatCur*evbs/vt + ckt->CKTgmin;
              here->MOS3cbs = SourceSatCur * (evbs-1);
          @}
          if(vbd <= 0) @{
              here->MOS3gbd = DrainSatCur/vt;
              here->MOS3cbd = here->MOS3gbd *vbd;
              here->MOS3gbd += ckt->CKTgmin;
          @} else @{
              evbd = exp(MIN(MAX_EXP_ARG,vbd/vt));
              here->MOS3gbd = DrainSatCur*evbd/vt +ckt->CKTgmin;
              here->MOS3cbd = DrainSatCur *(evbd-1);
          @}
@end example

The new corrected code is:

@example
          /*
           *   bulk-source and bulk-drain diodes
           *   here we just evaluate the ideal diode current and the
           *   corresponding derivative (conductance).
           */

next1:    if(vbs <= -3*vt) @{
              here->MOS3gbs = ckt->CKTgmin;
              here->MOS3cbs = here->MOS3gbs*vbs-SourceSatCur;
          @} else @{
              evbs = exp(MIN(MAX_EXP_ARG,vbs/vt));
              here->MOS3gbs = SourceSatCur*evbs/vt + ckt->CKTgmin;
              here->MOS3cbs = SourceSatCur*(evbs-1) + ckt->CKTgmin*vbs;
          @}
          if(vbd <= -3*vt) @{
              here->MOS3gbd = ckt->CKTgmin;
              here->MOS3cbd = here->MOS3gbd*vbd-DrainSatCur;
          @} else @{
              evbd = exp(MIN(MAX_EXP_ARG,vbd/vt));
              here->MOS3gbd = DrainSatCur*evbd/vt + ckt->CKTgmin;
              here->MOS3cbd = DrainSatCur*(evbd-1) + ckt->CKTgmin*vbd;
          @}
@end example

In the "load current vector" section of the @code{MOS3load()} routine,
"Gmin" appeared in the calculation of @code{ceqbd} and @code{ceqbs}:

@example
    /*
     *  load current vector
     */
      ceqbs = model->MOS3type * 
              (here->MOS3cbs-(here->MOS3gbs-ckt->CKTgmin)*vbs);
      ceqbd = model->MOS3type * 
              (here->MOS3cbd-(here->MOS3gbd-ckt->CKTgmin)*vbd);
@end example

The new code is:

@example 
    /*
     *  load current vector
     */
      ceqbs = model->MOS3type * 
              (here->MOS3cbs-(here->MOS3gbs)*vbs);
      ceqbd = model->MOS3type * 
              (here->MOS3cbd-(here->MOS3gbd)*vbd);
@end example

The gm, gmb and gs calculations in them MOS3 model (in @code{MOD3load()}
were all wrong:

@example
...
...
 /* 
  *.....normalized drain current
  */
  cdnorm = cdo*vdsx;
  here->MOS3gm = vdsx;
  here->MOS3gds = vgsx-vth-(1.0+fbody+dvtdvd)*vdsx;
  here->MOS3gmbs = dcodvb*vdsx;
  /* 
   *.....drain current without velocity saturation effect
   */
   cd1 = Beta*cdnorm;
   Beta = Beta*fgate;
   cdrain = Beta*cdnorm;
   here->MOS3gm = Beta*here->MOS3gm+dfgdvg*cd1;
   here->MOS3gds = Beta*here->MOS3gds+dfgdvd*cd1;
   here->MOS3gmbs = Beta*here->MOS3gmbs;
...
...
   cdrain = cdrain*xlfact;
   diddl = cdrain/(EffectiveLength-delxl);
   here->MOS3gm = here->MOS3gm*xlfact+diddl*ddldvg;
   gds0 = here->MOS3gds*xlfact+diddl*ddldvd;
   here->MOS3gmbs = here->MOS3gmbs*xlfact+diddl*ddldvb;
   here->MOS3gm = here->MOS3gm+gds0*dvsdvg;
   here->MOS3gmbs = here->MOS3gmbs+gds0*dvsdvb;
   here->MOS3gds = gds0*dvsdvd+diddl*dldvd;
...
...
@end example

The code has been corrected as follows leading to much improved 
convergence:

@example
...
...
 /* 
  *.....normalized drain current
  */
  cdnorm = cdo*vdsx;
  here->MOS3gm = vdsx;
  if ((here->MOS3mode*vds) > vdsat) here->MOS3gds = -dvtdvd*vdsx;
  else here->MOS3gds = vgsx-vth-(1.0+fbody+dvtdvd)*vdsx;
  here->MOS3gmbs = dcodvb*vdsx;
  /* 
   *.....drain current without velocity saturation effect
   */
  cd1 = Beta*cdnorm;
  Beta = Beta*fgate;
  cdrain = Beta*cdnorm;
  here->MOS3gm = Beta*here->MOS3gm+dfgdvg*cd1;
  here->MOS3gds = Beta*here->MOS3gds+dfgdvd*cd1;
  here->MOS3gmbs = Beta*here->MOS3gmbs+dfgdvb*cd1;
...
...
  cd1 = cdrain;
  cdrain = cdrain*xlfact;
  diddl = cdrain/(EffectiveLength-delxl);
  here->MOS3gm = here->MOS3gm*xlfact+diddl*ddldvg;
  here->MOS3gmbs = here->MOS3gmbs*xlfact+diddl*ddldvb;
  gds0 = diddl*ddldvd;
  here->MOS3gm = here->MOS3gm+gds0*dvsdvg;
  here->MOS3gmbs = here->MOS3gmbs+gds0*dvsdvb;
  here->MOS3gds = here->MOS3gds*xlfact+diddl*dldvd+gds0*dvsdvd;

/* 
  here->MOS3gds = (here->MOS3gds*xlfact)+gds0*dvsdvd-
  (cd1*ddldvd/(EffectiveLength*(1-2*dlonxl+dlonxl*dlonxl)));
 */
...
...
@end example

The Spice3 "fix" for the MOS3 gds discontinuity between the linear
and saturated regions works only if VMAX parameter is set to a 
non-zero value. A tweak has been added for the zero case. The Spice3
code (in @code{MOS3load()}) was:

@example
...
...
    /*
     *.....velocity saturation factor
     */
            if ( model->MOS3maxDriftVel != 0.0 ) @{
                fdrain = 1.0/(1.0+vdsx*onvdsc);
                fd2 = fdrain*fdrain;
                arga = fd2*vdsx*onvdsc*onfg;
                dfddvg = -dfgdvg*arga;
                dfddvd = -dfgdvd*arga-fd2*onvdsc;
                dfddvb = -dfgdvb*arga;
...
...
@end example

The code in NGSPICE is:

@example
...
...    
    /*
     *.....velocity saturation factor
     */
            if ( model->MOS3maxDriftVel > 0.0 ) @{
                fdrain = 1.0/(1.0+vdsx*onvdsc);
                fd2 = fdrain*fdrain;
                arga = fd2*vdsx*onvdsc*onfg;
                dfddvg = -dfgdvg*arga;
                if ((here->MOS3mode*vds) > vdsat) dfddvd = -dfgdvd*arga;
                else dfddvd = -dfgdvd*arga-fd2*onvdsc;
                dfddvb = -dfgdvb*arga;
...
...
@end example

The critical voltages in @code{MOS3Temp()} were calculated without
using temperature corrected saturation current:

@example
...
...
                  vt*log(vt/(CONSTroot2*model->MOS3jctSatCur));
      @} else @{
          here->MOS3drainVcrit =
                  vt * log( vt / (CONSTroot2 *
                  model->MOS3jctSatCurDensity * here->MOS3drainArea));
          here->MOS3sourceVcrit =
                  vt * log( vt / (CONSTroot2 *
                  model->MOS3jctSatCurDensity * here->MOS3sourceArea));
      @}
...
...
@end example

This have been fixed as follows:

@example
...
...
                 vt*log(vt/(CONSTroot2*here->MOS3m*here->MOS3tSatCur));
     @} else @{
         here->MOS3drainVcrit =
                 vt * log( vt / (CONSTroot2 *
                   here->MOS3m *
                   here->MOS3tSatCurDens * here->MOS3drainArea));
           here->MOS3sourceVcrit =
                   vt * log( vt / (CONSTroot2 *
                   here->MOS3m *
                   here->MOS3tSatCurDens * here->MOS3sourceArea));
     @}
...
...
@end example

In @code{MOS3temp()} some parameters were computed without taking
into account temperature corrected parameters:

@example
...
...
 here->MOS3f3d = czbd * model->MOS3bulkJctBotGradingCoeff 
                 * sarg/ arg / model->MOS3bulkJctPotential
                 + czbdsw * model->MOS3bulkJctSideGradingCoeff 
                 * sargsw/ arg /model->MOS3bulkJctPotential;
 here->MOS3f4d = czbd*model->MOS3bulkJctPotential*(1-arg*sarg)/
                 (1-model->MOS3bulkJctBotGradingCoeff)
                 + czbdsw*model->MOS3bulkJctPotential*(1-arg*sargsw)/
                 (1-model->MOS3bulkJctSideGradingCoeff)
                 -here->MOS3f3d/2*
                 (here->MOS3tDepCap*here->MOS3tDepCap)
                 -here->MOS3tDepCap * here->MOS3f2d;
 if(model->MOS3capBSGiven) @{
         czbs=here->MOS3tCbs;
 @} else @{
        if(model->MOS3bulkCapFactorGiven) @{
                czbs=here->MOS3tCj*here->MOS3sourceArea;
        @} else @{
                czbs=0;
        @}
 @}
...
... 
 here->MOS3f3s = czbs * model->MOS3bulkJctBotGradingCoeff 
                 * sarg/ arg / model->MOS3bulkJctPotential
                 + czbssw * model->MOS3bulkJctSideGradingCoeff 
                 * sargsw/ arg / model->MOS3bulkJctPotential;
 here->MOS3f4s = czbs*model->MOS3bulkJctPotential*(1-arg*sarg)/
                        (1-model->MOS3bulkJctBotGradingCoeff)
                    + czbssw*model->MOS3bulkJctPotential*(1-arg*sargsw)/
                        (1-model->MOS3bulkJctSideGradingCoeff)
                    -here->MOS3f3s/2*
                        (here->MOS3tBulkPot*here->MOS3tBulkPot)
                    -here->MOS3tBulkPot * here->MOS3f2s;
        @}
    @}
...
...
@end example

The corrected code is:

@example
...
...
 here->MOS3f3d = czbd * model->MOS3bulkJctBotGradingCoeff 
                 * sarg/ arg / here->MOS3tBulkPot
                 + czbdsw * model->MOS3bulkJctSideGradingCoeff 
                 * sargsw/ arg / here->MOS3tBulkPot;
 here->MOS3f4d = czbd*here->MOS3tBulkPot*(1-arg*sarg)/
                 (1-model->MOS3bulkJctBotGradingCoeff)
                 + czbdsw*here->MOS3tBulkPot*(1-arg*sargsw)/
                 (1-model->MOS3bulkJctSideGradingCoeff)
                 -here->MOS3f3d/2*
                 (here->MOS3tDepCap*here->MOS3tDepCap)
                 -here->MOS3tDepCap * here->MOS3f2d;
 if(model->MOS3capBSGiven) @{
         czbs = here->MOS3tCbs * here->MOS3m;
 @} else @{
        if(model->MOS3bulkCapFactorGiven) @{
                czbs=here->MOS3tCj*here->MOS3sourceArea * here->MOS3m;
        @} else @{
               czbs=0;
        @}
 @}
...
...
 here->MOS3f3s = czbs * model->MOS3bulkJctBotGradingCoeff 
                 * sarg/ arg / here->MOS3tBulkPot
                 + czbssw * model->MOS3bulkJctSideGradingCoeff 
                 * sargsw/ arg /here->MOS3tBulkPot;
 here->MOS3f4s = czbs*here->MOS3tBulkPot*(1-arg*sarg)/
                 (1-model->MOS3bulkJctBotGradingCoeff)
                 + czbssw*here->MOS3tBulkPot*(1-arg*sargsw)/
                 (1-model->MOS3bulkJctSideGradingCoeff)
                 -here->MOS3f3s/2*
                 (here->MOS3tDepCap*here->MOS3tDepCap)
                 -here->MOS3tDepCap * here->MOS3f2s;
        @}
    @}
 
@end example


@subsection switch model
@subsection current switch model
@subsection boh


@subsection PN diode voltage limiting

Spice3f voltage limiting across PN junctions did not perform limiting 
on negative voltages, resulting in convergence problems. In NGSPICE 
voltage limiting for PN diodes have been modified to work for negative
voltages too, improving convergence on calculations that rely on this 
code.

@noindent
@sc{Enhancement Data:}

@table @asis

@item Author:
Alan Gillespie

@item File:
@file{spicelib/devices/devsup.c} 

@item Function:
@code{DEVpnjlim()} 

@item Affects: 
All devices model that uses that function: @code{BJT1-2}, @code{BSIM3-4},
@code{DIO}, @code{EKV}, @code{HFET2}, @code{JFET1-2}, @code{MES}, 
@code{MESA}, @code{MOS1-9}. 
@end table 

@subsection FET voltage limiting

In NGSPICE the calculation of @var{vtstlo} is done according to the formula:
@example
vtstlo = fabs(vold - vto) + 1;
@end example
While in spice3f the formula was:
@example
vtstlo = vtsthi/2 + 2;
@end example

@noindent
@sc{Enhancement Data:}

@table @asis

@item Author:
Alan Gillespie

@item File:
@file{spicelib/devices/devsup.c} 

@item Function:
@code{DEVfetlim()} 

@item Affects: 
All devices model that uses that function: @code{BSIM1-4},@code{HFET1-2}, 
@code{JFET1-2}, @code{MES}, @code{MESA}, @code{MOS1-9}, @code{STAG}, @code{EKV}. 
@end table 

@subsection Meyer model improvement 
The calculation of active gate capacitance in @file{devsup.c} has been improved
to achieve better convergence.

@noindent
@sc{Enhacement Data:}

@table @asis

@item Author:
Alan Gillespie

@item File:
@file{spicelib/devices/devsup.c} 

@item Function:
@code{DEVqmeyer()} 

@item Affects: 
All devices model that uses that function: @code{MOS1-9}. 
@end table 


@chapter The BSIM3 Model Integration

BSIM3 compact model is a de-facto standard in the circuit simulation world 
and is extensively supported in the NGSPICE simulator. The original model 
dates back to the end of 1995. After almost ten years, three major revisions 
have been released by the Berkeley Device Group. NGSPICE supports all BSIM3 
model revisions.

We dedicated an entire chapter to the BSIM3 model since the procedure 
followed to integrate it into NGSPICE equally applies to other models 
from Berkeley's Device Group like BSIM4 and BSIMSOI. Most of the content
of this chapter is devoted to the latest release of BSIM3 available at the
time of writing: version 3.2 and its minor revisions 3.2.2, 3.2.3 and 3.2.4.
It is trivial to apply the same concepts to the older ones (3.0 and 3.1). 

The BSIM3 integration into NGSPICE is the result of the merging of three 
different sources: the original Berkeley's code and two enhanced version, one 
supplied by Alan Gillespie and the other by Serban Popescu. Both Alan and 
Serban enhanced the basic model adding multiplicity support, though using two 
different approaches. Serban added another enhancement, the "hdif" parameter.

NGSPICE provides Berkeley's, Alan's and Serban's models, using Alan's approach
fot multiplicity support in Berkeley's code.
 

@section BSIM3 Revisions

As previously said, due to the importance of BSIM3, NGSPICE includes all 
its revisions. We have decide to assign different levels only to major
revisions and use the "version" model parameter to switch among minors.
The only exceptions to this rule are Serban's and Alan's model, they are
a special kind of BSIM3 version 3.1 and they are kept separate from the 
Berkeley's model.

NGSPICE has five different levels for BSIM3:

@multitable @columnfractions .30 .30 .10 .30 
@item Major Revision @tab Minor Revisions @tab Level @tab Notes
@item BSIM3v3.2 @tab 3.2, 3.2.2, 3.2.3, 3.2.4 @tab  8 @tab The latest release
@item BSIM3v1S  @tab 3.1                      @tab 49 @tab Serban's code
@item BSIM3v1   @tab 3.1                      @tab 50 @tab Berkeley's code
@item BSIM3v1A  @tab 3.1                      @tab 51 @tab Alan's code
@item BSIM3v0   @tab 3.0                      @tab 52 @tab Berkeley's code
@end multitable

As you may see from the table above, level 8, the one officially assigned
by Berkeley Device Group,is reserved to the most recent major revision of 
the code. All BSIM3 models support the "m" parameter (multiplicity) but 
only Serban's one has the support for "hdif".

@section The integration process

This section briefly describes how we integrated the BSIM3 model into
NGSPICE. The integration process of BSIM3 model started with the download 
of the original code from Berkeley web site (device group). We devoted much 
of the work on release 3.2 and backported changes to the older ones. Our
work on the BSIM model can be summarized in the following points:

@itemize @bullet
@item Restructuring code for spice3f interface.
@item Adding minor releases switches (where necessary).
@item Adding support for parallel simulation (CIDER).
@item Adding support for "m" parameter.
@item Restructuring code for NGSPICE integration.
@end itemize

The first item is a necessary step for older models, since the device 
interface changed between spice3e (the original interface for BSIM3 model) 
and spice3f and NGSPICE device interface is based on spice3f. Changes consists 
is a shift in the position of @code{BSIM3states} in @file{bsim3def.h} and in 
the addition of the @code{BSIM3unsetup()} function in @file{b3set.c}.

The next step is the inclusion of runtime switches to select code for the
different minor revisions that a release can have (well, this is necessary 
only for release 3.2). 

The result of the two steps is a multirevision BSIM3 model with a spice3f4/5 
interface. Now we are ready to make the necessary enhancements and the changes
for integrating the model into NGSPICE.

The third and fourth items in the list are the model enhancements: the 
"parallel simulation support" is a feature inherited from the CIDER simulator 
(built on top of NGSPICE) that allow the simulator to use multiple processor 
elements to evaluate device code (making the simulation faster). The parallel 
simulation is not yet enabled in NGSPICE, but it will probably in the future. The 
"parallelization" code basically consists in a series of switches that skip device 
evaluation code if local processor (machine) has not been assigned to that 
particular device instance.  

Device "multiplicity" is a feature often found in commercial simulators, used to 
simulate many identical devices connected in parallel. This feature is important 
because reduces the number of nodes and equations in a circuit and makes the 
netlist more readable.

Now we are ready to restructure the code to make it compatible with the NGSPICE 
device interface, which is an extended version of the spice3f4/5 one.

@section The multirevision code

BSIM3 release 3.2 has three minor revisions: 3.2.2, 3.2.3 and 3.2.4. Reserving a 
different level for each is not a good solution, it will be a waste of space and
memory. The four (including 3.2) revisions differs for a few lines of code only, 
so the ideai is to merge the code and isolate revision dependent parts with 
runtime switches (the @code{switch} statement). The modifications needed are minimal,
but some work is needed to avoid slow comparison between strings.

As written before, the magic of revision selection is done via the "version" model
parameter, which appears on the model card. In BSIM3 version 3.2 this parameter
is a floating point value, since earlier releases were 3.0 and 3.1 and was easy to
code revision into a real number. With the release of 3.2.2 it changed to a string,
for obvious reasons (3.2.2 is not a real number). Since the "version" parameter was
used only for model checking, that was not a problem. In the multirevision model,
comparisons based on it appears in the device evaluation code, where speed is critical,
so we added a parameter @code{BSIM3intVersion}, defined in @file{bsim3def.h} as follows:

@example
...
...
 char   *BSIM3version;
    
    /* The following field is an integer coding
     * of BSIM3version.
     */     
    int    BSIM3intVersion;             
#define BSIM3V324  324       /* BSIM3 V3.2.4 */
#define BSIM3V323  323       /* BSIM3 V3.2.3 */
#define BSIM3V322  322       /* BSIM3 V3.2.2 */
#define BSIM3V32   32        /* BSIM3 V3.2   */
#define BSIM3V3OLD 0         /* Old model    */
    double BSIM3tox;             
...
...
@end example

The @code{BSIM3intVersion} will be used as argument to the @code{switch} statement,
because integer comparison is faster than string's one. The correct value of the 
parameter is assigned in @code{BSIM3setup()} by the code below:

@example
...
...
	/* If the user does not provide the model revision,
		 * we always choose the most recent.
		 */
		if (!model->BSIM3versionGiven)
			model->BSIM3version = "3.2.4";

		/* I have added below the code that translate model string
		 * into an integer. This trick is meant to speed up the 
		 * revision testing instruction, since comparing integer
		 * is faster than comparing strings.
		 * Paolo Nenzi 2002
		 */
		if (!strcmp (model->BSIM3version, "3.2.4"))
			model->BSIM3intVersion = BSIM3V324;
		else if (!strcmp (model->BSIM3version, "3.2.3"))
			model->BSIM3intVersion = BSIM3V323;
		else if (!strcmp (model->BSIM3version, "3.2.2"))
			model->BSIM3intVersion = BSIM3V322;
		else if (!strcmp (model->BSIM3version, "3.2"))
			model->BSIM3intVersion = BSIM3V32;
		else
			model->BSIM3intVersion = BSIM3V3OLD;
		/* BSIM3V3OLD is a placeholder for pre 3.2 revision 
		 * This model should not be used for pre 3.2 models. 
		 */
...
...
@end example

When we need to switch the code we use a @code{switch} statement
like the following: 

@example

 /* Added revision dependent code */
		  switch (model->BSIM3intVersion)
		    @{
		    case BSIM3V324:
			/* BSIM3v3.2.4 specific code */
		    break;
			
			case BSIM3V323:
			/* BSIM3v3.2.3 specific code */
			break;
			
		    case BSIM3V322:
			/* BSIM3v3.2.2 specific code */
			break;
		    case BSIM3V32:
			/* BSIM3v3.2 specific code */
			break;
			
		    default:
		    /* Old code */
		    @}
@end example

The differences between minor revision fall in two categories: modification in
the evaluation code and bug fixes. The idea followed in the merging was to 
leave out of the revision dependent code what was a mere bug fix.

@section Device Multiplicity

Spice3 (and thus NGSPICE) uses an approach called MNA (Modified Nodal Analysis)
to solve electrical circuits. MNA represents an electrical circuits using a
matrix containing devices' conductances and constraint equations (if you
need to know more, get a good book on circuit theory). This matrix is built
by summing the contribution of each instance (another name for "element") in
the circuit. The contribution of each instance to the circuit matrix is called
a "matrix stamp", which is itself a matrix containing non zero elements only 
at positions occupied by the device. It is very important to understand that
row and column index of the stamp must be consistent with the overall 
circuit matrix, the elements of the stamp have the same indexes they will
have in the circuit matrix. Note that all stamps are each other independent,
and this property can be exploited to add parallelization to the simulator 
(this is not new, CIDER uses this method). 

All the code in the model (every spice3 model) is needed to build the matrix
stamp for that particular instance of the device and for the analysis type
requested.

If we add many (let's say "m") device in parallel, "m" identical stamp are 
added to the circuit matrix. When we write "identical" we mean that the 
stamps contain identical values but at different locations. Each device has
"external" and "internal" nodes, the former are connected to devices' terminals
and the latter are internal to the device. It should be clear that nodes
corresponding to terminals must have the same node number and the same indexes 
in the matrix, since devices appear in parallel, while other must be different
because those nodes are private to each instance.

If we want to simulate "m" identical devices in parallel with a single instance,
its stamp must have an impact to the overall circuit matrix equal to the 
"superposition" of the single instances' "m" stamps. The term "superposition" is 
used instead of "sum" since we are interested in the external behaviour of the
parallel, not in its internals. The matrix stamp of the "multiple" device is a
stamp of a single device whose conductances are "adjusted" to represent the
parallel situation. Doing this we discard the internal complexity of the
single instance while leaving intact the influence of the parallel to the 
circuit. Reducing the complexity affects simulation speed, which is increased 
because there are less equations (not useful to our purposes) to solve and 
imposes less stress to simulator algorithms, resulting in less convergence
problems.

We may say that a "multiple" device is an external representation of
many identical device connected in parallel.

There are basically two approaches to build the equivalent stamp, both based 
on scaling the conductances of the model by the multiplicity value (the number 
of device to connect in parallel). The first approach (used in NGSPICE BSIM3) 
scales the conductances in the matrix stamp, when it is loaded into the overall
matrix, and the other one scales the conductances in the entire model code. Both
approaches have advantages and drawbacks, let's examine some of them. 

The first approach, i.e. scaling the conductances at loading time, is 
advantageous because the stamp "loading" code is easy to spot and because
the modification consists simply in multiplying each line by the multiplicity
factor "m". Another advantage is that this approach does not require a full 
analysis of the device code to isolate the variables (they may be currents, 
resistances, etc.,  not only conductances) that need to be scaled. The
most important drawback is that the evaluation code does not know anything
about "multiplicity" and then all internal computations are made for the
"single" device. To correct this, without interfering with the evaluation
code, you need to correct the routine that exports internal values (it is
the so called DEVask, where DEV is a placeholder for device's name).

The second approach, i.e. scaling the variables in the evaluation code, does
not have the drawback of the previous one but require a full code analysis
which, in turn, means more time to complete. 

@subsection Adding the "m" parameter

The multiplicity parameter is an instance parameter. The first step is to
modify the code adding space for it in the various structures. The structure 
@code{BSIM3instance} in @code{bsim3def.h} needs an entry for the new parameter,
its "given" flag and a numerical ID for the entry in the @code{BSIM3pTable}:

@example
...
...
    double BSIM3w;
    double BSIM3m;
    double BSIM3drainArea;
...
...
    unsigned BSIM3wGiven :1;
    unsigned BSIM3mGiven :1;
    unsigned BSIM3drainAreaGiven :1;
...
...
#define BSIM3_L 2
#define BSIM3_M 15
#define BSIM3_AS 3
...
...
@end example


The @code{BSIM3pTable} structure in @file{b3.c} needs an entry too:

@example
...
...
IOP( "w",   BSIM3_W,      IF_REAL   , "Width"),
IOP( "m",   BSIM3_M,      IF_REAL   , "Parallel multiplier"),
IOP( "ad",  BSIM3_AD,     IF_REAL   , "Drain area"),
...
...
@end example

Once the entries are created, it is necessary to set up the bureaucracy needed
to set and query the new parameter. In the setup routine @code{BSIM3setup()} the 
following code should be added:

@example
            if (!here->BSIM3mGiven)
                here->BSIM3m = 1;
@end example

This states that if multiplicity is not given in the netlist, it must be defaulted
to one. To set the "given" flag the following code should be added to @code{BSIM3param()}:

@example
        case BSIM3_M:
            here->BSIM3m = value->rValue;
            here->BSIM3mGiven = TRUE;
            break;
@end example

The last modification nedeed by model bureaucracy must be done in @code{BSIM3ask()}.

The following code should be added:

@example
        case BSIM3_M:
            value->rValue = here->BSIM3m;
            return(OK);
@end example			

Now the model is ready to set, query, default and use the new parameter. As discussed 
before, this model use the "first" approach, thus only matrix loading code is affected 
by the new parameter. In the @code{BSIM3load} routine the "Load Current Vector" and 
"Load Y Matrix" section should become:

@example
...
...
   (*(ckt->CKTrhs + here->BSIM3gNode) -= m*ceqqg);
   (*(ckt->CKTrhs + here->BSIM3bNode) -= m*(ceqbs + ceqbd + ceqqb));
   (*(ckt->CKTrhs + here->BSIM3dNodePrime) +=m*(ceqbd - cdreq - ceqqd));
   (*(ckt->CKTrhs + here->BSIM3sNodePrime) += m*(cdreq + ceqbs + ceqqg
	                                                 + ceqqb + ceqqd));
   if (here->BSIM3nqsMod)
   *(ckt->CKTrhs + here->BSIM3qNode) += m*(cqcheq - cqdef);

   /*
    *  load y matrix
    */

   T1 = qdef * here->BSIM3gtau;
   (*(here->BSIM3DdPtr) += m*here->BSIM3drainConductance);
   (*(here->BSIM3GgPtr) += m*(gcggb - ggtg));
...
...
   *(here->BSIM3QspPtr) += m*(ggts - gcqsb);
   *(here->BSIM3QbPtr) += m*(ggtb - gcqbb);
...
...
@end example

The "load y matrix" is not completely shown, each line is multiplied by "m". The
same method has been applied to @code{BSIM3acLoad()} routine:

@example
...
...
              m = here->BSIM3m;

              *(here->BSIM3GgPtr +1) += m * xcggb;
              *(here->BSIM3BbPtr +1) -= M * (xcbgb + xcbdb + xcbsb);
...
...
                  *(here->BSIM3QspPtr) += m * xgts;
                  *(here->BSIM3QbPtr) += m * xgtb;
              @}
...
...
@end example

The pole-zero analysis uses a load routine (@code{BSIM3pzLoad()}) very similar to the
one used by the AC analysis:

@example
...
...
            m = here->BSIM3m;

			*(here->BSIM3GgPtr) += m * (xcggb * s->real);
			*(here->BSIM3GgPtr + 1) += m * (xcggb * s->imag);
...
...
                *(here->BSIM3QbPtr) += m * xgtb;
				*(here->BSIM3QspPtr) += m * xgts;
			@}
...
...
@end example

The noise analysis needs special attention, since it does not directly uses a 
matrix load  routine. In this case was necessary to study the noise models 
used by BSIM3 and to scale the parameters affected by multiplicity. The following 
parameters were multiplied by the value of @code{BSIM3m}: @code{BSIM3cd} (drain 
current), @code{BSIM3weff} (effective width), @code{BSIM3drainConductance}, 
@code{BSIM3sourceConductance}, @code{BSIM3gm} (transconductance), @code{BSIM3gds} 
(drain to source conductance), @code{BSIM3gmbs} (body source transconductance), 
@code{BSIM3qinv} (charge in the channel). 

In 3.2.4 BSIM3 revision, a bugfix introduced the @code{BSIM3rds} (drain to source 
resistance) parameter. Since this is a resistance it has been divided by the
value of @code{BSIM3m}.

Now that we dealt with analyses code, the last piece of code to modify is
the @code{BSIM3ask()} routine. Again we have to identify what parameters need
to be scaled and multiply them by the multiplicity. If you look at the code
you will clearly see the affected parameters.

@section BSIM3 TNOM patch

All BSIM3 models, when implemented into Spice3f (NGSPICE), shows a bug that
affects simulations when the modelcard contains the TNOM keyword. If you
run consecutive times a netlist without reloading the deck, you will get
different answers with each run. Mike Smith discovered that the bug
hides in the functions @code{BSIM3mparam()} and @code{BSIM3setup()}. The 
solutions (as extracted from Mike's post to @url{comp.lsi.cad}):

@example
In b3mpar.c look for the following code:-

        case  BSIM3_MOD_TNOM :
            mod->BSIM3tnom = value->rValue;
            mod->BSIM3tnomGiven = TRUE;
            break;

Change the second line so the code reads:-

        case  BSIM3_MOD_TNOM :
            mod->BSIM3tnom = value->rValue + 273.15;
            mod->BSIM3tnomGiven = TRUE;
            break;

In b3set.c, look for the following code:-

        if (!model->BSIM3tnomGiven)  
            model->BSIM3tnom = ckt->CKTnomTemp; 
	  else
            model->BSIM3tnom = model->BSIM3tnom + 273.15;

Delete the second and third lines to read:-

        if (!model->BSIM3tnomGiven)  
            model->BSIM3tnom = ckt->CKTnomTemp;

@end example

@section References for BSIM3 model

BSIM3 model is developed by the UC Berkeley Device Group, which maintains
a web site at the URL: @url{http://www-device.eecs.berkeley.edu/} for all
the model they develop.

@itemize @bullet
@item BSIM3 home page: @*
@url{http://www-device.eecs.berkeley.edu/~bsim3/latenews.html}
@item BSIM3 introduction: @* 
@url{http://www-device.eecs.berkeley.edu/~bsim3/intro.html}
@item BSIM3 contact page: @*
@url{http://www-device.eecs.berkeley.edu/~bsim3/contact.html}
@end itemize

@chapter EKV Model

da scrivere

@bye
